ANALOG DEVICES ADL5511 Service Manual
DC to 6 GHz
V
Data Sheet
FEATURES
Envelope tracking RF detector with output proportional to
input voltage
Separate TruPwr rms output
No balun or external tuning required
Excellent temperature stability
Input power dynamic range of 47 dB
Input frequency range from dc to 6 GHz
130 MHz envelope bandwidth
Envelope delay: 2 ns
Single-supply operation: 4.75 V to 5.25 V
Supply current: 21.5 mA
Power-down mode: 130 μW
APPLICATIONS
RMS power and envelope detection of W-CDMA, CDMA2000,
LTE, and other complex waveforms
Drain modulation based power amplifier linearization
Power amplifier linearization employing envelope-tracking
methods
Envelope and TruPwr RMS Detector
ADL5511
FUNCTIONAL BLOCK DIAGRAM
POS
15
400Ω
RMS
ENVELOPE
250Ω
FLT2
FLT3
Figure 1.
20pF
G = 1.7
G = 1.5
0.8pF
CH1 HIGH
20mV
100Ω
COMM
14
11
10
9
FLT4
VRMS
VENV
EREF
09602-001
ENBL
RFIN
FLT1
ADL5511
BIAS AND POWER-
4
DOWN CONTROL
2
10kΩ
3
250Ω
5pF
400Ω
0.4pF
VPOS VPOS
13 6 7 8 12 16 1 5
NC
VRMS
VENV
GENERAL DESCRIPTION
The ADL5511 is an RF envelope and TruPwr™ rms detector.
The envelope output voltage is presented as a voltage that is
proportional to the envelope of the input signal. The rms
output voltage is independent of the peak-to-average ratio
of the input signal.
The rms output is a linear-in-V/V voltage with a conversion
gain of 1.9 V/V rms at 900 MHz. The envelope output has a
conversion gain of 1.46 V/V at 900 MHz and is referenced to
an internal 1.1 V reference voltage, which is available on the
EREF pin.
RF INPUT
CH1 200mV Ω CH2 30.8mV Ω M 100ns A CH4 1.60V
CH3 200mV
CH4 234mV Ω
T –68ns
09602-002
Figure 2. RMS and Envelope Response to a 20 MHz QPSK-Based LTE Carrier
(Test Model E-TM1_1_20MHz)
The ADL5511 can operate from dc to 6 GHz on signals with
envelope bandwidths up to 130 MHz.
The extracted envelope can be used for RF power amplifier
(PA) linearization and efficiency enhancements and the rms
output can be used for rms power measurement. The high rms
accuracy and fast envelope response are particularly useful for
envelope detection and power measurement of broadband, high
peak-to-average signals that are used in CDMA2000, W-CDMA,
and LTE systems.
The ADL5511 operates from −40°C to +85°C and is available in
a 16-lead, 3 mm × 3 mm LFCSP package.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2011–2012 Analog Devices, Inc. All rights reserved.
ADL5511 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 7
ESD Caution .................................................................................. 7
Pin Configuration and Function Descriptions ............................. 8
Typical Performance Characteristics ............................................. 9
Circuit Description ......................................................................... 17
Envelope Propagation Delay ..................................................... 17
RMS Circuit Description ........................................................... 17
RMS Filtering .............................................................................. 17
Output Drive Capability and Buffering ................................... 18
Applications Information .............................................................. 19
Basic Connections ...................................................................... 19
Operation Below 1 GHz/Envelope Filtering ........................... 19
Choosing a Value for the RMS Averaging Capacitor (C
Envelope Tracking Accuracy .................................................... 21
Time Domain Envelope Tracking Accuracy........................... 21
VRMS and VENV Output Offset ............................................. 22
Device Calibration and Error Calculation .............................. 22
Error vs. Frequency .................................................................... 23
Evaluation Board ........................................................................ 24
Outline Dimensions ....................................................................... 26
Ordering Guide .......................................................................... 26
FLT 4
).. 20
REVISION HISTORY
2/12—Rev. 0 to Rev. A
Changes to Equation 4 ................................................................... 19
Updated Outline Dimensions ....................................................... 26
7/11—Revision 0: Initial Version
Rev. A | Page 2 of 28
Data Sheet ADL5511
FREQUENCY RANGE
Input RFIN
DC 6
GHz
Output Voltage
Intercept
−5 mV
Input Range (±1 dB Error)
CW input
46 dB
SPECIFICATIONS
TA = 25°C, V
and V
RMS
Table 1.
Parameter Conditions Min Typ Max Unit
= 5 V, C
POS
= 100 nF, 75 Ω shunt termination resistor to ground on (ac-coupled) RFIN, three-point calibration on V
FLT4
at +5 dBm, −15 dBm, and −26 dBm, unless otherwise noted.
ENV
ENVELOPE CONVERSION (100 MHz) Input RFIN to output (V
ENV
− V
)
EREF
Input Range (±1 dB Error) CW input 46 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 1.42 V/V rms
ENV
17 dBm
−29 dBm
Intercept −5 mV
High Power In PIN = +10 dBm, +707 mV rms 1.00 V
Low Power In PIN = −20 dBm, +22.4 mV rms 26 mV
RMS Conversion Input RFIN to output (V
)
RMS
Input Range (±1 dB Error) CW input 46 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 1.92 V/V rms
RMS
17 dBm
−29 dBm
Intercept 11 mV
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 1.38 V
Low Power In PIN = −20 dBm, +22.4 mV rms 53 mV
ENVELOPE CONVERSION (900 MHz) Input RFIN to output (V
ENV
− V
)
EREF
Input Range (±1 dB Error) CW input 46 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 1.46 V/V rms
ENV
17 dBm
−29 dBm
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 1.02 V
Low Power In PIN = −20 dBm, +22.4 mV rms 26 mV
RMS Conversion Input RFIN to output (V
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 1.9 V/V rms
RMS
)
RMS
17 dBm
−29 dBm
Intercept 13 mV
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 1.35 V
Low Power In PIN = −20 dBm, +22.4 mV rms 54 mV
Rev. A | Page 3 of 28
ADL5511 Data Sheet
Input Range (±1 dB Error)
CW Input
47 dB
Minimum Input Level
±
−30 dBm
Intercept
−5 mV
High Power In
PIN = +10 dBm, +707 mV rms
1.07 V
RMS Conversion
Input RFIN to output (V
)
Maximum Input Level
±
17 dBm
Conversion Gain
V
= (Gain × VIN) + Intercept
1.99 V/V rms
Output Voltage
Low Power In
PIN = −20 dBm, +22.4 mV rms
56 mV
Parameter Conditions Min Typ Max Unit
ENVELOPE CONVERSION (1900 MHz) Input RFIN to output (V
Input Range (±1 dB Error) CW input 47 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 1.5 V/V rms
ENV
Intercept −5 mV
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 1.05 V
Low Power In PIN = −20 dBm, +22.4 mV rms 28 mV
RMS Conversion Input RFIN to output (V
Input Range (±1 dB Error) CW input 47 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 1.96 V/V rms
RMS
Intercept 14 mV
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 1.40 V
Low Power In PIN = −20 dBm, +22.4 mV rms 56 mV
ENVELOPE CONVERSION (2140 MHz) Input RFIN to output (V
− V
ENV
)
EREF
17 dBm
−30 dBm
)
RMS
17 dBm
−30 dBm
− V
ENV
)
EREF
Maximum Input Level
±1 dB error
17 dBm
1 dB error
Conversion Gain V
= (Gain × VIN) + Intercept 1.53 V/V rms
ENV
Output Voltage
Low Power In PIN = −20 dBm, +22.4 mV rms 28 mV
RMS
Input Range (±1 dB Error) CW input 47 dB
1 dB error
Minimum Input Level
±1 dB error
RMS
−30 dBm
Intercept 13 mV
High Power In PIN = +10 dBm, +707 mV rms 1.42 V
Rev. A | Page 4 of 28
Data Sheet ADL5511
Low Power In
PIN = −20 dBm, +22.4 mV rms
57 mV
Parameter Conditions Min Typ Max Unit
ENVELOPE CONVERSION (2600 MHz) Input RFIN to output (V
Input Range (±1 dB Error) CW Input 47 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 1.56 V/V rms
ENV
Intercept −3 mV
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 1.10 V
Low Power In PIN = −20 dBm, +22.4 mV rms 30 mV
RMS Conversion Input RFIN to output (V
Input Range (±1 dB Error) CW input 47 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 2.04 V/V rms
RMS
Intercept 15 mV
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 1.46 V
Low Power In PIN = −20 dBm, +22.4 mV rms 58 mV
ENVELOPE CONVERSION (3500 MHz) Input RFIN to output (V
Input Range (±1 dB Error) CW Input 47 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 1.56 V/V rms
ENV
Intercept −5 mV
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 1.10 V
Low Power In PIN = −20 dBm, +22.4 mV rms 28 mV
RMS Conversion Input RFIN to output (V
Input Range (±1 dB Error) CW input 47 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 2.03 V/V rms
RMS
Intercept 12 mV
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 1.46 V
− V
ENV
)
EREF
17 dBm
−30 dBm
)
RMS
17 dBm
−30 dBm
− V
ENV
)
EREF
17 dBm
−30 dBm
)
RMS
17 dBm
−30 dBm
Rev. A | Page 5 of 28
ADL5511 Data Sheet
Envelope Bandwidth
3 dB 130 MHz
Logic Level to Disable Power
4.75 V ≤ V
≤ 5.25 V
2.0
V
Parameter Conditions Min Typ Max Unit
ENVELOPE CONVERSION (6000 MHz) Input RFIN to output (V
Input Range (±1 dB Error) CW Input 45 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 0.85 V/V rms
ENV
Intercept −10 mV
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 0.60 V
Low Power In PIN = −20 dBm, +22.4 mV rms 11 mV
RMS Conversion Input RFIN to output (V
Input Range (±1 dB Error) CW input 45 dB
Maximum Input Level
Minimum Input Level
Conversion Gain V
±1 dB error
±1 dB error
= (Gain × VIN) + Intercept 1.11 V/V rms
RMS
Intercept 7 mV
Output Voltage
High Power In PIN = +10 dBm, +707 mV rms 0.80 V
Low Power In PIN = −20 dBm, +22.4 mV rms 35 mV
ENVELOPE OUTPUT Pin VENV
Maximum Output Voltage V
= 5 V, R
POS
≥ 500 Ω, C
LOAD
Output Offset No signal at RFIN 2 mV
− V
ENV
)
EREF
17 dBm
−28 dBm
)
RMS
17 dBm
−28 dBm
≤ 10 pF 3.5 V
LOAD
Pulse Response Time Input level = no signal to 5 dBm, 10% to
90% response time
4 ns
Envelope Delay RFIN to VENV 2 ns
Output Current Drive Load = 500 Ω||10 pF 15 mA
RMS OUTPUT Pin VRMS
Maximum Output Voltage V
= 5 V, R
POS
≥ 10 kΩ 3.8 V
LOAD
Output Offset No signal at RFIN 23 mV
Output Current Drive Load = 1.3 kΩ 3 mA
ENABLE INTERFACE Pin ENBL
Logic Level to Enable Power 4.75 V ≤ V
≤ 5.25 V 3.6 V
POS
POS
POWER SUPPLIES
Operating Range −40°C < TA < +85°C 4.75 5.25 V
Quiescent Current RFIN < −10 dBm, ENBL high 21.5 mA
RFIN < −10 dBm, ENBL low 26 μA
RFIN = 15 dBm, ENBL high 43.8 mA
Rev. A | Page 6 of 28
Data Sheet ADL5511
θJA
68.9°C/W
θJC
17.5°C/W
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage, VPOS 5.5 V
ENBL 0 V, VPOS
RFIN (RFIN AC-Coupled) 5.6 V p-p
Equivalent RF Power (Peak Envelope Power or
CW), re: 50 Ω
Internal Power Dissipation 580 mW
19 dBm
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Maximum Junction Temperature 125°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
ESD (FICDM) 1250 V
ESD (HBM) 2000 V
ESD CAUTION
Rev. A | Page 7 of 28
ADL5511 Data Sheet
NOTES
1. NC = NO CONNECT. DO NOT CONNECT T O T HIS PIN.
2. THE EXPOSED PAD SHOULD BE CONNE
CTED
TO BOTH THERMAL AND
ELECTRICAL GROUNDS.
PIN 1
INDICATOR
1FLT3
2RFIN
3FLT1
4ENBL
11
VRMS
12 NC
10 VENV
9 EREF
5
6
NC
7
NC
8NC
15
16
14
13
TO
P VIEW
(Not to Scale)
ADL5511
COMM
FLT2
VPOS
FLT4
NC
09602-103
6, 7, 8, 12, 13
NC
Do not connect to these pins.
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 3. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1, 16 FLT3, FLT2 External Envelope Filter. With the F LT 3 an d F LT 2 pins not connected, two internal low-pass filters (operating
in series) with corner frequencies of approximately 1000 MHz and 800 MHz remove the residual RF carrier (at
two times the original input frequency) from the envelope signal. External, supply-referenced capacitors
connected to FLT3 and FLT2 can be used to reduce this corner frequency. See the Basic Connections section
for more information.
2 RFIN RF Input. RFIN should be externally ac-coupled. RFIN has a nominal input impedance of 250 Ω. To achieve a
broadband 50 Ω input impedance, an external 75 Ω shunt resistor should be connected between the source
side of the ac coupling capacitor and ground.
3 F LT1 External Envelope Filter. A capacitor to ground on this pin can be used to reduce the nominal minimum
input frequency. The capacitance on this pin helps to reduce any residual RF carrier presence on the EREF
output pin. See the Basic Connections section for more information.
4 ENBL Device Enable/Disable. A logic high on this pin enables the device. A logic low on this pin disables the
device.
5 COMM Device Ground. Connect to a low impedance ground plane.
9 EREF Reference Voltage for Envelope Output. The nominal value is 1.1 V.
10 VENV Envelope Output. The voltage on this pin represents the envelope of the input signal and is referred to
EREF. VENV can source a current of up to 15 mA. Capacitive loading should not exceed 10 pF to achieve the
specified envelope bandwidth. Lighter loads should be chosen when possible. The nominal output voltages
on EREF and VENV with no signal present track with temperature. For dc-coupled envelope output, EREF
should be used as a reference giving the true envelope voltage of V
ENV
− V
. For ac coupling of the
EREF
envelope output, the VENV pin can drive a 50 Ω load, if maximum current drive capability of 15 mA is not
exceeded. See the Output Drive Capability and Buffering section for more information.
11 VRMS RMS Output Pin. This voltage is ground referenced and has a nominal swing of 0 V to 3.8 V. V
has a linear-
RMS
in-V/V transfer function with a nominal slope of 2 V/V.
14 F LT4 RMS Averaging Capacitor. Connect between FLT4 and VPOS.
15 VPOS Supply Voltage Pin. Operational range is 4.75 V to 5.25 V with a supply current of 21.5 mA.
0 EP Exposed Pad. The exposed pad should be connected to both thermal and electrical grounds.
Rev. A | Page 8 of 28
Data Sheet ADL5511
0.001
0.01
0.1
1
10
–30 –25 –20 –15 –10 –5 0 5 10 15 20
OUTPUT (V)
INPUT (d Bm)
100MHz
900MHz
1900MHz
2140MHz
2600MHz
3500MHz
6000MHz
09602-003
0.001
0.01
0.1
1
10
–30 –25 –20 –15 –10 –5 0 5 10 15 20
OUTPUT (V)
INPUT (d Bm)
5V, –40°C
5V, +25°C
5V, +85°C
09602-004
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
–30 –25 –20 –15 –10 –5 0 5 10 15 20
SUPPLY CURRENT (mA)
INPUT (d Bm)
09602-005
–40°C
+25°C
+85°C
0.01
0.1
1
10
–30 –25 –20 –15 –10 –5 0 5 10 15 20
OUTPUT (V)
INPUT (d Bm)
100MHz
900MHz
1900MHz
2140MHz
2600MHz
3500MHz
6000MHz
09602-006
–30 –25 –20 –15 –10 –5 0 5 10 15 20
0.01
0.1
1
10
OUTPUT (V)
INPUT (d Bm)
5V, –40°C
5V, +25°C
5V, +85°C
09602-007
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0
50
100
150
200
250
300
350
400
450
0 1 2 3 4 5 6
SHUNT CAPACIT ANCE ( pF)
SHUNT RESISTANCE (Ω)
FREQUENCY ( GHz)
09602-008
SHUNT CAPACIT ANCE
SHUNT RESIS TANCE
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, V
+85°C (red), three-point calibration on V
= 5 V, C
POS
= 100 nF, 75 Ω shunt termination resistor to ground on (ac-coupled) RFIN, TA = +25°C (black), −40°C (blue),
FLT4
ENV
and V
at +5 dBm, −15 dBm, and −26 dBm, unless otherwise noted.
RMS
Figure 4. V
Figure 5. V
Output vs. Input Level, at Various Frequencies at 25°C,
ENV
Supply 5 V
Output vs. Input Level and Temperature at 1900 MHz,
ENV
Supply 5 V
Figure 7. V
Figure 8. V
Output vs. Input Level, at Various Frequencies at 25°C,
RMS
Supply 5 V
Output vs. Input Level and Temperature at 1900 MHz,
RMS
Supply 5 V
Figure 6. Supply Current vs. Input Level and Temperature
Figure 9. Input Impedance vs. Frequency
Rev. A | Page 9 of 28
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