ANALOG DEVICES ADL5367 Service Manual

500 MHz to 1700 MHz Balanced Mixer,

V

FEATURES

RF frequency range of 500 MHz to 1700 MHz
IF frequency range of 30 MHz to 450 MHz
Power conversion loss: 7.7 dB
SSB noise figure of 8.3 dB
SSB noise figure with 5 dBm blocker of 21 dB
Input IP3 of 34 dBm
Typical LO drive of 0 dBm
Single-ended, 50 Ω RF and LO input ports
High isolation SPDT LO input switch
Single-supply operation: 3.3 V to 5 V
Exposed paddle 5 mm × 5 mm, 20-lead LFCSP
1500 V HBM/500 V FICDM ESD performance

APPLICATIONS

Cellular base station receivers
Transmit observation receivers
Radio link downconverters

GENERAL DESCRIPTION

The ADL5367 uses a highly linear, doubly balanced passive
mixer core along with integrated RF and LO balancing circuitry
to allow for single-ended operation. The ADL5367 incorporates
an RF balun, allowing optimal performance over a 500 MHz to
1700 MHz RF input frequency range. Performance is optimized for
RF frequencies from 500 MHz to 1200 MHz using a high-side LO
and for RF frequencies from 900 MHz to 1700 MHz using a
low-side LO. The balanced passive mixer arrangement provides
good LO-to-RF leakage, typically better than −35 dBm, and
excellent intermodulation performance. The balanced mixer
core also provides extremely high input linearity, allowing the
device to be used in demanding cellular applications where in­band blocking signals may otherwise result in the degradation
of dynamic performance. A high linearity IF buffer amplifier
follows the passive mixer core to yield a typical power conversion
loss of 7.7 dB and can be used with a wide range of output
impedances.

LO Buffer and RF Balun

ADL5367

FUNCTIONAL BLOCK DIAGRAM

CMI IFOP IFON PWDN COMM

20 19 18 17 16

1

VPMX

2

RFIN

3

RFCT

BIAS

GENERATOR

4

COMM

5

COMM

6 7 8 9 10

VLO3 LGM3 VLO2 LOSW NC

NC = NO CONNECT

Figure 1.

The ADL5367 provides two switched LO paths that can be
used in TDD applications where it is desirable to rapidly switch
between two local oscillators. LO current can be externally set
using a resistor to minimize dc current commensurate with the
desired level of performance. For low voltage applications, the
ADL5367 is capable of operation at voltages down to 3.3 V with
substantially reduced current. Under low voltage operation, an
additional logic pin is provided to power down (<200 μA) the
circuit when desired.

The ADL5367 is fabricated using a BiCMOS high performance
IC process. The device is available in a 5 mm × 5 mm, 20-lead
LFCSP and operates over a −40°C to +85°C temperature range.
An evaluation board is also available.

Table 1. Passive Mixers

RF Frequency
(MHz)

Single
Mixer

Single Mixer +
IF Amp

500 to 1700 ADL5367 ADL5357 ADL5358
1200 to 2500 ADL5365 ADL5355 ADL5356

ADL5367

15

LOI2

14

VPSW

13

VGS1

12

VGS0

11

LOI1

Dual Mixer +
IF Amp

8083-001

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2009 Analog Devices, Inc. All rights reserved.

ADL5367

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1 

General Description ......................................................................... 1

Functional Block Diagram .............................................................. 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

5 V Performance ........................................................................... 4

3.3 V Performance ........................................................................ 4

Absolute Maximum Ratings ............................................................ 5

ESD Caution .................................................................................. 5

Pin Configuration and Function Descriptions ............................. 6

Typical Performance Characteristics ............................................. 7

5 V Performance ........................................................................... 7

3.3 V Performance ...................................................................... 14

Upconversion .............................................................................. 15

Spur Tables .................................................................................. 16

Circuit Description......................................................................... 17

RF Subsystem .............................................................................. 17

LO Subsystem ............................................................................. 17

Applications Information .............................................................. 19

Basic Connections ...................................................................... 19

IF Port .......................................................................................... 19

Bias Resistor Selection ............................................................... 19

Mixer VGS Control DAC .......................................................... 19

Evaluation Board ............................................................................ 20

Outline Dimensions ....................................................................... 23

Ordering Guide .......................................................................... 23

REVISION HISTORY

10/09—Revision 0: Initial Version

Rev. 0 | Page 2 of 24

ADL5367

SPECIFICATIONS

VS = 5 V, IS = 97 mA, TA = 25°C, fRF = 900 MHz, fLO = 1103 MHz, LO power = 0 dBm, ZO = 50 Ω, unless otherwise noted.

Table 2.

Parameter Conditions Min Typ Max Unit

RF INPUT INTERFACE

Return Loss Tunable to >20 dB over a limited bandwidth 14 dB
Input Impedance 50 Ω
RF Frequency Range 500 1700 MHz

OUTPUT INTERFACE

Output Impedance Differential impedance, f = 200 MHz 34||1.9 Ω||pF
IF Frequency Range 30 450 MHz
DC Bias Voltage1 Externally generated 3.3 5.0 5.5 V

LO INTERFACE

LO Power −6 0 +10 dBm
Return Loss 12.6 dB
Input Impedance 50 Ω
LO Frequency Range 730 1670 MHz

POWER-DOWN (PWDN) INTERFACE

PWDN Threshold 1.0 V
Logic 0 Level 0.4 V
Logic 1 Level 1.4 V
PWDN Response Time Device enabled, IF output to 90% of its final level 160 ns
Device disabled, supply current < 5 mA 220 ns
PWDN Input Bias Current Device enabled 0.0 μA

Device disabled 70 μA

1

Apply the supply voltage from the external circuit through the choke inductors.

2

PWDN function is intended for use with VS ≤ 3.6 V only.

2

Rev. 0 | Page 3 of 24

ADL5367

5 V PERFORMANCE

VS = 5 V, IS = 97 mA, TA = 25°C, fRF = 900 MHz, fLO = 1103 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.

Table 3.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

Power Conversion Loss Including 1:1 IF port transformer and PCB loss 6.5 7.7 8.5 dB
Voltage Conversion Loss Z
SSB Noise Figure 8.3 dB
SSB Noise Figure Under Blocking

Input Third-Order Intercept (IIP3)

Input Second-Order Intercept (IIP2)

Input 1 dB Compression Point (IP1dB)1 Exceeding 20 dBm RF power results in damage to the device 25 dBm
LO-to-IF Leakage Unfiltered IF output −15 dBm
LO-to-RF Leakage −40 dBm
RF-to-IF Isolation −47 dBc
IF/2 Spurious 0 dBm input power −75 dBc
IF/3 Spurious 0 dBm input power −72 dBc

POWER SUPPLY

Positive Supply Voltage 4.5 5 5.5 V
Total Quiescent Current VS = 5 V 97 mA

1

Exceeding 20 dBm RF power results in damage to the device.

= 50 Ω, differential Z

SOURCE

= 50 Ω differential 1.4 dB

LOAD

5 dBm blocker present ±10 MHz from wanted RF input,
LO source filtered

= 899.5 MHz, f

f

RF1

= 900.5 MHz, fLO = 1103 MHz,

RF2

each RF tone at 0 dBm

= 950 MHz, f

f

RF1

= 900 MHz, fLO = 1103 MHz,

RF2

each RF tone at 0 dBm

21 dB

28 34 dBm

80 dBm

3.3 V PERFORMANCE

VS = 3.3 V, IS = 56 mA, TA = 25°C, fRF = 900 MHz, fLO = 1103 MHz, LO power = 0 dBm, R9 = 226 Ω, VGS0 = VGS1 = 0 V, and ZO = 50 Ω,
unless otherwise noted.

Table 4.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

Power Conversion Loss Including 4:1 IF port transformer and PCB loss 7.3 dB
Voltage Conversion Loss Z
SSB Noise Figure 8.1 dB
Input Third-Order Intercept (IIP3)

Input Second-Order Intercept (IIP2)

POWER INTERFACE

Supply Voltage 3.0 3.3 3.6 V
Quiescent Current Resistor programmable 56 mA
Power-Down Current Device disabled 150 μA

= 50 Ω, differential Z

SOURCE

= 1949.5 MHz, f

f

RF1

= 1950.5 MHz, fLO = 1750 MHz,

RF2

each RF tone at −10 dBm

= 1950 MHz, f

f

RF1

= 1900 MHz, fLO = 1750 MHz,

RF2

each RF tone at −10 dBm

= 200 Ω differential 1 dB

LOAD

28.5 dBm

75 dBm

Rev. 0 | Page 4 of 24

ADL5367

ABSOLUTE MAXIMUM RATINGS

Table 5.

Parameter Rating

Supply Voltage, VS 5.5 V
RF Input Level 20 dBm
LO Input Level 13 dBm
IFOP, IFON Bias Voltage 6.0 V
VGS0, VGS1, LOSW, PWDN 5.5 V
Internal Power Dissipation 1.2 W
θJA 25°C/W
Maximum Junction Temperature 150°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) 260°C

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

ESD CAUTION

Rev. 0 | Page 5 of 24

ADL5367

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

DN

IFON

IFOP

VCMI

PW

COMM

17

16

18

19

20

PIN 1
INDICATOR

1VPMX
2RFIN

ADL5367

3RFCT

TOP VIEW

4COMM

(Not to S cale)

5COMM

8

6

7

VLO3

VLO2

LGM3

NOTES

1.2 NC = NO CONNECT.
. EXPOSED PAD. MUST BE SOLDERED

TO GROUND.

Figure 2. Pin Configuration

Table 6. Pin Function Descriptions

Pin No. Mnemonic Description

1 VPMX Positive Supply Voltage for IF Amplifier.
2 RFIN RF Input. This pin must be ac-coupled.
3 RFCT RF Balun Center Tap (AC Ground).
4, 5, 16 COMM Device Common (DC Ground).
6, 8 VLO3, VLO2 Positive Supply Voltages for LO Amplifier.
7 LGM3 LO Amplifier Bias Control.
9 LOSW LO Switch. LOI1 selected for 0 V, or LOI2 selected for 3 V.
10 NC No Connect.
11, 15 LOI1, LOI2 LO Inputs. This pin must be ac-coupled.
12, 13 VGS0, VGS1 Mixer Gate Bias Controls. 3 V logic. Ground these pins for nominal setting.
14 VPSW Positive Supply Voltage for LO Switch.
17 PWDN Power Down. Connect this pin to ground for normal operation or connect this pin to 3.0 V for disable mode.
18, 19 IFON, IFOP Differential IF Outputs.
20 VCMI No Connect. This pin can be grounded.
EPAD (EP) Exposed pad must be soldered to ground.

15 LOI2
14 VPSW
13 VGS1
12 VGS0
11 LOI1

9

10
NC

LOSW

08083-002

Rev. 0 | Page 6 of 24

ADL5367

TYPICAL PERFORMANCE CHARACTERISTICS

5 V PERFORMANCE

VS = 5 V, IS = 97 mA, TA = 25°C, fRF = 900 MHz, fLO = 1103 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.

110

100

105

100

95

90

SUPPLY CURRENT (mA)

85

80

700 750 800 850 900 950 1000 1050 1100 1150 1200

= +25°C

T

A

RF FREQUENCY ( M H z)

TA =–40°C

TA = +85°C

Figure 3. Supply Current vs. RF Frequency

10.0

9.5

9.0

8.5

8.0

7.5

7.0

6.5

CONVERSION LOSS (dB)

6.0

5.5

5.0

700 750 800 850 900 950 1000 1050 1100 1150 1200

T

= +25°C

A

TA =–40°C

RF FREQUENC Y ( MHz)

TA = +85°C

Figure 4. Power Conversion Loss vs. RF Frequency

40

90

80

70

INPUT IP2 (dBm)

60

50

40

700 750 800 850 900 950 1000 1050 1 100 1150 1200

08083-017

TA = –40°C

TA = +85°C

RF FREQUENCY ( MHz )

= +25°C

T

A

08083-023

Figure 6. Input IP2 vs. RF Frequency

12

11

10

9

8

7

SSB NOISE FIGURE (dB)

6

5

700 750 800 850 900 950 1000 1050 1100 1150 1200

08083-035

TA = +85ºC

TA = +25ºC

TA = –40ºC

RF FREQUENCY ( MHz)

08083-011

Figure 7. SSB Noise Figure vs. RF Frequency

38

36

34

32

INPUT IP3 (dBm)

30

28

26

T

= +25°C

A

TA = –40°C

TA = +85°C

700 750 800 850 900 950 1000 1050 1100 1150 1200

RF FREQUENCY ( M H z)

08083-028

Figure 5. Input IP3 vs. RF Frequency

Rev. 0 | Page 7 of 24

ADL5367

VS = 5 V, IS = 97 mA, TA = 25°C, fRF = 900 MHz, fLO = 1103 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.

110

86

105

V

= 5.25V

V

POS

POS

= 5V

= 4.75V

TEMPERATURE (°C)

100

95

V

POS

90

SUPPLY CURRENT (mA)

85

80

–40 –20 0 20 40 60 80

Figure 8. Supply Current vs. Temperature

10.0

9.5

9.0

8.5

8.0

7.5

7.0

6.5

CONVERSION L O S S (d B)

6.0

5.5

5.0

–40 –20 0 20 40 60 80

TEMPERATURE (°C)

V
V
V

Figure 9. Power Conversion Loss vs. Temperature

40

POS
POS
POS

= 4.75V
= 5V
= 5.25V

84

82

80

78

76

INPUT IP2 (dBm)

74

72

70

–40 –20 0 20 40 60 80

08083-019

V

= 5V

POS

TEMPERATURE (°C)

V

= 5.25V

POS

V

= 4.75V

POS

8083-025

Figure 11. Input IP2 vs. Temperature

12

11

10

9

8

V

7

SSB NOISE FIGURE (dB)

6

5

–40 –20 0 20 40 60 80

08083-038

POS

TEMPERATURE (ºC)

= 4.75V

V

= 5.25V

POS

V

= 5V

POS

08083-012

Figure 12. SSB Noise Figure vs. Temperature

38

V

= 5.25V

V

POS

POS

= 4.75V

8083-030

36

34

32

INPUT IP3 (dBm)

30

28

26

–40 –20 0 20 40 60 80

V

= 5V

POS

TEMPERATURE (°C)

Figure 10. Input IP3 vs. Temperature

Rev. 0 | Page 8 of 24