RF frequency range of 1200 MHz to 2500 MHz
IF frequency range of dc to 450 MHz
Power conversion loss: 7.3 dB
SSB noise figure of 8.3 dB
SSB noise figure with 5 dBm blocker of 18.5 dB
Input IP3 of 36 dBm
Typical LO drive of 0 dBm
Single-ended, 50 Ω RF and LO input ports
High isolation SPDT LO input switch
Single-supply operation: 3.3 V to 5 V
Exposed paddle 5 mm × 5 mm, 20-lead LFCSP
1500 V HBM/500 V FICDM ESD performance
APPLICATIONS
Cellular base station receivers
Transmit observation receivers
Radio link downconverters
GENERAL DESCRIPTION
The ADL5365 uses a highly linear, doubly balanced passive
mixer core along with integrated RF and LO balancing circuitry
to allow for single-ended operation. The ADL5365 incorporates
an RF balun, allowing for optimal performance over a 1200 MHz
to 2500 MHz RF input frequency range using high-side LO
injection for RF frequencies from 1700 MHz to 2500 MHz and
low-side injection for frequencies from 1200 MHz to 1700 MHz.
The balanced passive mixer arrangement provides good LO-toRF leakage, typically better than −30 dBm, and excellent intermodulation performance. The balanced mixer core also provides
extremely high input linearity, allowing the device to be used in
demanding cellular applications where in-band blocking signals
may otherwise result in the degradation of dynamic performance.
LO Buffer and RF Balun
ADL5365
FUNCTIONAL BLOCK DIAGRAM
CMIIFOPIFONPWDNCOMM
2019181716
1
VPMX
2
RFIN
3
RFCT
BIAS
GENERATOR
4
COMM
5
COMM
678910
VLO3LGM3VLO2LOSWNC
NC = NO CONNECT
Figure 1.
The ADL5365 provides two switched LO paths that can be
used in TDD applications where it is desirable to rapidly switch
between two local oscillators. LO current can be externally set
using a resistor to minimize dc current commensurate with the
desired level of performance. For low voltage applications, the
ADL5365 is capable of operation at voltages down to 3.3 V with
substantially reduced current. Under low voltage operation, an
additional logic pin is provided to power down (<200 μA) the
circuit when desired.
The ADL5365 is fabricated using a BiCMOS high performance
IC process. The device is available in a 5 mm × 5 mm, 20-lead
LFCSP and operates over a −40°C to +85°C temperature range.
An evaluation board is also available.
ADL5365
15
LOI2
14
VPSW
13
VGS1
12
VGS0
11
LOI1
8082-001
Table 1. Passive Mixers
RF Frequency
(MHz)
Single
Mixer
Single Mixer +
IF Amp
Dual Mixer +
IF Amp
500 to 1700 ADL5367 ADL5357 ADL5358
1200 to 2500 ADL5365 ADL5355 ADL5356
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VS = 5 V, IS = 95 mA, TA = 25°C, fRF = 1900 MHz, fLO = 1697 MHz, LO power = 0 dBm, ZO = 50 Ω, unless otherwise noted.
Table 2.
Parameter Test Conditions/Comments Min Typ Max Unit
RF INPUT INTERFACE
Return Loss Tunable to >20 dB over a limited bandwidth 16 dB
Input Impedance 50 Ω
RF Frequency Range 1500 2700 MHz
OUTPUT INTERFACE
Output Impedance Differential impedance, f = 200 MHz 36||2 Ω||pF
IF Frequency Range dc 450 MHz
DC Bias Voltage1 Externally generated 3.3 5.0 5.5 V
LO INTERFACE
LO Power −6 0 +10 dBm
Return Loss 17 dB
Input Impedance 50 Ω
LO Frequency Range 1230 2470 MHz
POWER-DOWN (PWDN) INTERFACE
PWDN Threshold 1.0 V
Logic 0 Level 0.4 V
Logic 1 Level 1.4 V
PWDN Response Time Device enabled, IF output to 90% of its final level 160 ns
Device disabled, supply current < 5 mA 220 ns
PWDN Input Bias Current Device enabled 0.0 μA
Device disabled 70 μA
1
Apply the supply voltage from the external circuit through the choke inductors.
2
PWDN function is intended for use with VS ≤ 3.6 V only.
2
Rev. 0 | Page 3 of 24
ADL5365
5 V PERFORMANCE
VS = 5 V, IS = 95 mA, TA = 25°C, fRF = 1900 MHz, fLO = 1697 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
Table 3.
Parameter Test Conditions\Comments Min Typ Max Unit
DYNAMIC PERFORMANCE
Power Conversion Loss Including 1:1 IF port transformer and PCB loss 6.5 7.3 8.4 dB
Voltage Conversion Loss Z
SSB Noise Figure 8.3 dB
SSB Noise Figure Under Blocking
Input Third-Order Intercept (IIP3)
Input Second-Order Intercept (IIP2)
Input 1 dB Compression Point (IP1dB)1 Exceeding 20 dBm RF power results in damage to the device 25 dBm
LO-to-IF Leakage Unfiltered IF output −18 dBm
LO-to-RF Leakage −33 dBm
RF-to-IF Isolation −50 dBc
IF/2 Spurious 0 dBm input power −65 dBc
IF/3 Spurious 0 dBm input power −71 dBc
POWER SUPPLY
Positive Supply Voltage 4.5 5 5.5 V
Quiescent Current Resistor programmable 95 mA
1
Exceeding 20 dBm RF power results in damage to the device.
= 50 Ω, differential Z
SOURCE
= 50 Ω differential dB
LOAD
5 dBm blocker present ±10 MHz from wanted RF input,
LO source filtered
= 1899.5 MHz, f
f
RF1
= 1900.5 MHz, fLO = 1697MHz,
RF2
each RF tone at 0 dBm
= 1950 MHz, f
f
RF1
= 1900 MHz, fLO = 1697 MHz,
RF2
each RF tone at 0 dBm
18.5 dB
27 36 dBm
67 dBm
3.3 V PERFORMANCE
VS = 3.3 V, IS = 56 mA, TA = 25°C, fRF = 1900 MHz, fLO = 1697 MHz, LO power = 0 dBm, R9 = 226 Ω, VGS0 = VGS1 = 0 V, and ZO = 50 Ω,
unless otherwise noted.
Table 4.
Parameter Test Conditions/Comments Min Typ Max Unit
DYNAMIC PERFORMANCE
Power Conversion Loss Including 1:1 IF port transformer and PCB loss 7.4 dB
Voltage Conversion Loss Z
SSB Noise Figure 8.4 dB
Input Third-Order Intercept (IIP3)
Input Second-Order Intercept (IIP2)
POWER INTERFACE
Supply Voltage 3.0 3.3 3.6 V
Quiescent Current Resistor programmable 56 mA
Power-Down Current Device disabled 150 μA
= 50 Ω, differential Z
SOURCE
= 1899.5 MHz, f
f
RF1
RF2
each RF tone at 0 dBm
= 1950 MHz, f
f
RF1
= 1900 MHz, fLO = 1697 MHz,
RF2
each RF tone at 0 dBm
= 50 Ω differential 7.1 dB
LOAD
= 1900.5 MHz, fLO = 1697 MHz,
32 dBm
58 dBm
Rev. 0 | Page 4 of 24
ADL5365
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter Rating
Supply Voltage, VS 5.5 V
RF Input Level 20 dBm
LO Input Level 13 dBm
IFOP, IFON Bias Voltage 6.0 V
VGS0, VGS1, LOSW, PWDN 5.5 V
Internal Power Dissipation 1.2 W
θJA 25°C/W
Maximum Junction Temperature 150°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) 260°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. 0 | Page 5 of 24
ADL5365
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
DN
IFON
IFOP
VCMI
PW
COMM
17
16
18
19
20
PIN 1
INDICATOR
1VPMX
2RFIN
ADL5365
3RFCT
TOP VIEW
4COMM
(Not to S cale)
5COMM
8
6
7
VLO3
VLO2
LGM3
NOTES
1.2 NC = NO CONNECT.
. EXPOSED PAD. MUST BE SOLDERED
TO GROUND.
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1 VPMX Positive Supply Voltage.
2 RFIN RF Input. Must be ac-coupled.
3 RFCT RF Balun Center Tap (AC Ground).
4, 5, 16 COMM Device Common (DC Ground).
6, 8 VLO3, VLO2 Positive Supply Voltages for LO Amplifier.
7 LGM3 LO Amplifier Bias Control.
9 LOSW LO Switch. LOI1 selected for 0 V, or LOI2 selected for 3 V.
10 NC No Connect.
11, 15 LOI1, LOI2 LO Inputs. These pins must be ac-coupled.
12, 13 VGS0, VGS1 Mixer Gate Bias Controls. 3 V logic. Ground these pins for nominal setting.
14 VPSW Positive Supply Voltage for LO Switch.
17 PWDN Power-Down. Connect this pin to ground for normal operation or connect this pin to 3.0 V for disable mode.
18, 19 IFON, IFOP Differential IF Outputs.
20 VCMI No Connect. This pin can be grounded.
EPAD (EP) Exposed pad must be soldered to ground.
15 LOI2
14 VPSW
13 VGS1
12 VGS0
11 LOI1
9
10
NC
LOSW
08082-002
Rev. 0 | Page 6 of 24
ADL5365
TYPICAL PERFORMANCE CHARACTERISTICS
5 V PERFORMANCE
VS = 5 V, IS = 95 mA, TA = 25°C, fRF = 1900 MHz, fLO = 1697 MHz, LO power = 0 dBm, RF power = 0 dBm, VGS0 = VGS1 = 0 V, and
Z