ANALOG DEVICES ADL5357 Service Manual

500 MHz to 1700 MHz Balanced Mixer,

LO Buffer, IF Amplifier, and RF Balun

FEATURES

RF frequency range of 500 MHz to 1700 MHz
IF frequency range of 30 MHz to 450 MHz
Power conversion gain: 8.6 dB
SSB noise figure of 9.1 dB
SSB noise figure with 5 dBm blocker of 19.5 dB
Input IP3 of 26.6 dBm
Input P1dB of 10.2 dBm
Typical LO drive of 0 dBm
Single-ended, 50 Ω RF and LO input ports
High isolation SPDT LO input switch
Single-supply operation: 3.3 V to 5 V
Exposed paddle 5 mm × 5 mm, 20-lead LFCSP
1500 V HBM/500 V FICDM ESD performance

APPLICATIONS

Cellular base station receivers
Transmit observation receivers
Radio link downconverters

GENERAL DESCRIPTION

The ADL5357 uses a highly linear, doubly balanced passive
mixer core along with integrated RF and LO balancing circuitry
to allow for single-ended operation. The ADL5357 incorporates
an RF balun, allowing for optimal performance over a 500 MHz to
1700 MHz RF input frequency range using high-side LO injection
for RF frequencies from 500 MHz to 1200 MHz and low-side
injection for frequencies from 900 MHz to 1700 MHz. The
balanced passive mixer arrangement provides good LO-to-RF
leakage, typically better than −46 dBm, and excellent inter­modulation performance. The balanced mixer core also provides
extremely high input linearity, allowing the device to be used in
demanding cellular applications where in-band blocking signals
may otherwise result in the degradation of dynamic performance.
A high linearity IF buffer amplifier follows the passive mixer core
to yield a typical power conversion gain of 8.6 dB and can be used
with a wide range of output impedances.

ADL5357

FUNCTIONAL BLOCK DIAGRAM

IFGM

20 19 18 17 16

1

VPIF

2

RFIN

3

RFCT

4

COMM

5

COMM

6 7 8 9 10

VLO3 LGM3 VLO2 LOSW NC

NC = NO CONNECT

The ADL5357 provides two switched LO paths that can be
used in TDD applications where it is desirable to rapidly switch
between two local oscillators. LO current can be externally set
using a resistor to minimize dc current commensurate with the
desired level of performance. For low voltage applications, the
ADL5357 is capable of operation at voltages down to 3.3 V with
substantially reduced current. Under low voltage operation, an
additional logic pin is provided to power down (<200 μA) the
circuit when desired.

The ADL5357 is fabricated using a BiCMOS high performance
IC process. The device is available in a 5 mm × 5 mm, 20-lead
LFCSP and operates over a −40°C to +85°C temperature range.
An evaluation board is also available.

Table 1. Passive Mixers

RF Frequency
(MHz)

500 to 1700 ADL5357
1200 to 2500 ADL5355

IFOP IFON PWDN LEXT

ADL5357

BIAS

GENERATOR

Figure 1.

Single
Mixer

Single Mixer +
IF Amp

15

LOI2

14

VPSW

13

VGS1

12

VGS0

11

LOI1

Dual Mixer +
IF Amp

8081-001

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2009 Analog Devices, Inc. All rights reserved.

ADL5357

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1 

General Description ......................................................................... 1

Functional Block Diagram .............................................................. 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

5 V Performance ........................................................................... 4

3.3 V Performance ........................................................................ 4

Absolute Maximum Ratings ............................................................ 5

ESD Caution .................................................................................. 5

Pin Configuration and Function Descriptions ............................. 6

Typical Performance Characteristics ............................................. 7

5 V Performance ........................................................................... 7

3.3 V Performance ...................................................................... 14

Spur Tables .................................................................................. 15

Circuit Description......................................................................... 16

RF Subsystem .............................................................................. 16

LO Subsystem ............................................................................. 17

Applications Information .............................................................. 18

Basic Connections ...................................................................... 18

IF Port .......................................................................................... 18

Bias Resistor Selection ............................................................... 18

Mixer VGS Control DAC .......................................................... 18

Evaluation Board ............................................................................ 20

Outline Dimensions ....................................................................... 23

Ordering Guide .......................................................................... 23

REVISION HISTORY

7/09—Revision 0: Initial Version

Rev. 0 | Page 2 of 24

ADL5357

SPECIFICATIONS

V

= 5 V, IS = 190 mA, TA = 25°C, fRF = 900 MHz, fLO = 1103 MHz, LO power = 0 dBm, ZO = 50 Ω, unless otherwise noted.

POS

Table 2.

Parameter Conditions Min Typ Max Unit

RF INPUT INTERFACE

Return Loss Tunable to >20 dB over a limited bandwidth 19 dB
Input Impedance 50 Ω
RF Frequency Range 500 1700 MHz

OUTPUT INTERFACE

Output Impedance Differential impedance, f = 200 MHz 240||0.4 Ω||pF
IF Frequency Range 30 450 MHz
DC Bias Voltage1 Externally generated 3.3 5.0 5.5 V

LO INTERFACE

LO Power −6 0 +10 dBm
Return Loss 12 dB
Input Impedance 50 Ω
LO Frequency Range 730 1670 MHz

POWER-DOWN (PWDN) INTERFACE

PWDN Threshold 1.0 V
Logic 0 Level 0.4 V
Logic 1 Level 1.4 V
PWDN Response Time Device enabled, IF output to 90% of its final level 160 ns
Device disabled, supply current < 5 mA 220 ns
PWDN Input Bias Current Device enabled 0.0 μA

Device disabled 70 μA

1

Apply the supply voltage from the external circuit through the choke inductors.

2

The PWDN function is intended for use with V

2

≤ 3.6 V only.

POS

Rev. 0 | Page 3 of 24

ADL5357

5 V PERFORMANCE

V

= 5 V, IS = 190 mA, TA = 25°C, fRF = 900 MHz, fLO = 1103 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless

POS

otherwise noted.

Table 3.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

Power Conversion Gain Including 4:1 IF port transformer and PCB loss 7 8.6 9.5 dB
Voltage Conversion Gain Z
SSB Noise Figure 9.1 dB
SSB Noise Figure Under Blocking

Input Third-Order Intercept (IIP3)

Input Second-Order Intercept (IIP2)

Input 1 dB Compression Point (IP1dB) 10.2 dBm
LO-to-IF Leakage Unfiltered IF output −7 dBm
LO-to-RF Leakage −46.7 dBm
RF-to-IF Isolation −35 dBc
IF/2 Spurious −10 dBm input power −69.2 dBc
IF/3 Spurious −10 dBm input power −83.4 dBc

POWER SUPPLY

Positive Supply Voltage 4.5 5 5.5 V
Quiescent Current LO supply, resistor programmable 100 mA
IF supply, resistor programmable 90 mA
Total Quiescent Current V

= 50 Ω, differential Z

SOURCE

5 dBm blocker present ±10 MHz from wanted RF input,

= 200 Ω differential 14.9 dB

LOAD

19.5 dB

LO source filtered

= 899.5 MHz, f

f

RF1

= 900.5 MHz, fLO = 1103 MHz,

RF2

22 26.6 dBm

each RF tone at −10 dBm

= 950 MHz, f

f

RF1

= 900 MHz, fLO = 1103 MHz,

RF2

62.8 dBm

each RF tone at −10 dBm

= 5 V 190 mA

POS

3.3 V PERFORMANCE

V

= 3.3 V, IS = 125 mA, TA = 25°C, fRF = 900 MHz, fLO = 1103 MHz, LO power = 0 dBm, R9 = 226 Ω, R14 = 604 Ω, VGS0 = VGS1 = 0 V,

POS

and Z

= 50 Ω, unless otherwise noted.

O

Table 4.

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

Power Conversion Gain Including 4:1 IF port transformer and PCB loss 8.8 dB
Voltage Conversion Gain Z
SSB Noise Figure 9.0 dB
Input Third-Order Intercept (IIP3)

Input Second-Order Intercept (IIP2)

Input 1 dB Compression Point (IP1dB) 7.1 dBm

POWER INTERFACE

Supply Voltage 3.0 3.3 3.6 V
Quiescent Current Resistor programmable 125 mA
Power-Down Current Device disabled 150 μA

= 50 Ω, differential Z

SOURCE

= 899.5 MHz, f

f

RF1

= 900.5 MHz, fLO = 1103 MHz,

RF2

each RF tone at −10 dBm

= 950 MHz, f

f

RF1

= 900 MHz, fLO = 1103 MHz,

RF2

each RF tone at −10 dBm

= 200 Ω differential 15.1 dB

LOAD

21.4 dBm

55.7 dBm

Rev. 0 | Page 4 of 24

ADL5357

ABSOLUTE MAXIMUM RATINGS

Table 5.

Parameter Rating

Supply Voltage, V
RF Input Level 20 dBm
LO Input Level 13 dBm
IFOP, IFON Bias Voltage 6.0 V
VGS0, VGS1, LOSW, PWDN 5.5 V
Internal Power Dissipation 1.2 W
θJA 25°C/W
Maximum Junction Temperature 150°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) 260°C

5.5 V

POS

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

ESD CAUTION

Rev. 0 | Page 5 of 24

ADL5357

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

DN

IFON

IFOP

IFGM

20

1VPIF
2RFIN

ADL5357

3RFCT

TOP VIEW

4COMM

(Not to Scale)

5COMM

6

VLO3

NOTES

1.2 NC = NO CONNECT.
. EXPOSED PAD. MUST BE SOLDERED

TO GROUND.

Figure 2. Pin Configuration

Table 6. Pin Function Descriptions

Pin No. Mnemonic Description

1 VPIF Positive Supply Voltage for IF Amplifier.
2 RFIN RF Input. Must be ac-coupled.
3 RFCT RF Balun Center Tap (AC Ground).
4, 5 COMM Device Common (DC Ground).
6, 8 VLO3, VLO2 Positive Supply Voltages for LO Amplifier.
7 LGM3 LO Amplifier Bias Control.
9 LOSW LO Switch. LOI1 selected for 0 V, and LOI2 selected for 3 V.
10 NC No Connect.
11, 15 LOI1, LOI2 LO Inputs. Must be ac-coupled.
12, 13 VGS0, VGS1 Mixer Gate Bias Controls. 3 V logic. Ground these pins for nominal setting.
14 VPSW Positive Supply Voltage for LO Switch.
16 LEXT IF Return. This pin must be grounded.
17 PWDN Power Down. Connect this pin to ground for normal operation and connect this pin to 3.0 V for disable mode.
18, 19 IFON, IFOP Differential IF Outputs (Open Collectors). Each requires an external dc bias.
20 IFGM IF Amplifier Bias Control.
EPAD (EP) Exposed pad. Must be soldered to ground.

18

19

PIN 1
INDICATOR

8

7

VLO2

LGM3

LEXT

PW

17

16

15 LO I2
14 VPSW
13 VGS1
12 VGS0
11 LO I1

9

10

NC

LOSW

08081-002

Rev. 0 | Page 6 of 24

ADL5357

TYPICAL PERFORMANCE CHARACTERISTICS

5 V PERFORMANCE

V

= 5 V, IS = 190 mA, TA = 25°C, fRF = 900 MHz, fLO = 1103 MHz, LO power = 0 dBm, R9 = 1.1 kΩ, R14 = 910 Ω, VGS0 = VGS1 = 0 V,

POS

and Z

= 50 Ω, unless otherwise noted.

O

220

210

200

= –40°C

T

190

180

T

= +85°C

A

170

SUPPLY CURRENT (mA)

160

A

TA = +25°C

80

70

60

50

40

30

INPUT IP2 (dBm)

20

10

= –40°C

T

A

TA = +25°C

T

= +85°C

A

150

700 750 800 850 900 950 1000 1050 1100 1150 1200

RF FREQUENCY (MHz)

Figure 3. Supply Current vs. RF Frequency

12

10

T

= –40°C

A

8

6

4

CONVERSION G AIN (dB)

2

0

700 750 800 850 900 950 1000 1050 1100 1150 1200

= +85°C

T

A

RF FREQUENCY (MHz)

TA = +25°C

Figure 4. Power Conversion Gain vs. RF Frequency

35

T

= –40°C

30

A

25

= +85°C

T

A

20

15

INPUT IP3 (dBm)

10

5

0

700 750 800 850 900 950 1000 1050 1100 1150 1200

TA = +25°C

RF FREQUENCY (MHz)

Figure 5. Input IP3 vs. RF Frequency

0

700 750 800 850 900 950 1000 1050 1100 1150 1200

08081-034

RF FREQUENCY (MHz)

8081-019

Figure 6. Input IP2 vs. RF Frequency

14

13

12

11

10

INPUT P1dB (dBm)

08081-015

= +85°C

T

A

9

8

7

6

700 750 800 850 900 950 1000 1050 1100 1150 1200

TA = +25°C

T

A

RF FREQUENCY (MHz)

= –40°C

08081-024

Figure 7. Input P1dB vs. RF Frequency

20

18

16

14

12

T

= +85°C

A

10

8

= –40°C

T

A

6

SSB NOISE FIGURE (dB)

4

2

0

700 750 800 850 900 950 1000 1050 1100 1150 1200

08081-021

RF FREQUENCY (MHz)

TA = +25°C

08081-027

Figure 8. SSB Noise Figure vs. RF Frequency

Rev. 0 | Page 7 of 24

ADL5357

250

200

150

100

SUPPLY CURRENT (mA)

50

V

V

POS

POS

= 5.25V

= 4.75V

80

V

= 5.0V

70

60

V

= 5V

POS

50

40

30

INPUT IP2 (dBm)

20

10

POS

V

= 5.25V

POS

V

= 4.75V

POS

0

–40 –20 0 20 40 60 80

TEMPERATURE (°C)

Figure 9. Supply Current vs. Temperature

10

9

8

7

6

CONVERSION G AIN (dB)

5

4

–40 –20 0 20 40 60 80

TEMPERATURE (°C)

V
V
V

Figure 10. Power Conversion Gain vs. Temperature

35

33

31

V

29

27

25

23

INPUT IP3 (dBm)

21

19

17

15

V

= 4.75V

POS

–40 –20 0 20 40 60 80

= 5.0V

POS

TEMPERATURE (°C)

V

POS

Figure 11. Input IP3 vs. Temperature

= 4.75V

POS

= 5.0V

POS

= 5.25V

POS

= 5.25V

0

–40 –20 0 20 40 60 80

08081-035

TEMPERATURE (°C)

08081-047

Figure 12. Input IP2 vs. Temperature

14

13

12

11

10

V

9

8

INPUT P1dB (dBm)

7

6

5

4

–40 –20 0 20 40 60 80

08081-046

POS

= 4.75V

TEMPERATURE (°C)

V

= 5.0V

POS

V

= 5.25V

POS

08081-049

Figure 13. Input P1dB vs. Temperature

12

11

V

= 5.0V

10

V

= 5.25V

POS

9

V

= 4.75V

POS

8

SSB NOISE FIGURE (dB)

7

6

–40 –20 0 20 40 60 80

08081-048

TEMPERATURE (°C)

POS

8081-028

Figure 14. SSB Noise Figure vs. Temperature

Rev. 0 | Page 8 of 24