Operation from 400 MHz to 4000 MHz
Gain of 14.6 dB at 2140 MHz
OIP3 of 43.1 dBm at 2140 MHz
P1dB of 29.1 dBm at 2140 MHz
Noise figure of 3.8 dB
Dynamically adjustable bias
Adjustable power supply bias: 3.3 V to 5 V
Low power supply current: 62 mA to 133 mA
No bias resistor needed
Operating temperature range of −40°C to +105°C
SOT-89 package, MSL-1 rated
ESD rating of ±3 kV (Class 2)
APPLICATIONS
Wireless infrastructure
Automated test equipment
ISM/AMR applications
GENERAL DESCRIPTION
The ADL5324 incorporates a dynamically adjustable biasing
circuit that allows for the customization of OIP3 and P1dB
performance from 3.3 V to 5 V, without the need for an external
bias resistor. This feature gives the designer the ability to tailor
driver amplifier performance to the specific needs of the design.
This feature also creates the opportunity for dynamic biasing of
the driver amplifier where a variable supply is used to allow for
full 5 V biasing under large signal conditions, and then reduced
supply voltage when signal levels are smaller and lower power
consumption is desirable. This scalability reduces the need to
evaluate and inventory multiple driver amplifiers for different
output power requirements, from 25 dBm to 29 dBm output
power levels.
The ADL5324 is also rated to operate across the wide temperature range of −40°C to +105°C for reliable performance
in designs that experience higher temperatures, such as power
amplifiers. The ½ W driver amplifier also covers the wide
frequency range of 400 MHz to 4000 MHz, and only requires
a few external components to be tuned to a specific band within
that wide range. This high performance broadband RF driver
amplifier is well suited for a variety of wired and wireless
applications, including cellular infrastructure, ISM band power
amplifiers, defense equipment, and instrumentation equipment.
A fully populated evaluation board is available.
½ Watt RF Driver Amplifier
ADL5324
FUNCTIONAL BLOCK DIAGRAM
GND
(2)
ADL5324
BIAS
12
RFIN
The ADL5324 also delivers excellent ACPR vs. output power
and bias voltage. The driver can deliver greater than 17 dBm
of output power at 2140 MHz, while achieving an ACPR of
−55 dBc at 5 V. If the bias is reduced to 3.3 V, the −55 dBc
ACPR output power only minimally reduces to 15 dBm.
30
–35
–40
–45
–50
–55
–60
–65
–70
–75
ACPR @ 5MHz CARRIER O FFSET (dBc)
–80
–85
–20–15–10–50510152025
Figure 2. ACPR vs. Output Power, Single Carrier W-CDMA,
SOURCE
VCC=3.3V
VCC=5V
TM1-64 at 2140 MHz
GND
RFOUT
Figure 1.
P
(dBm)
OUT
3
10562-001
10562–055
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
3.3 V 5 V
Parameter Test Conditions/Comments Min Typ Max Min Typ Max Unit
FREQUENCY = 457 MHz
Gain 17.2 18.4 dB
vs. Frequency ±37 MHz +0.0/−0.4 +0.0/−0.2 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.6 ±0.6 dB
vs. Supply 3.15 V to 3.45 V, 4.75 V to 5.25 V ±0.3 ±0.07 dB
Output 1 dB Compression Point 24.2 28.0 dBm
Output Third-Order Intercept ∆f = 1 MHz, P
Noise Figure 5.6 6.8 dB
FREQUENCY = 748 MHz
Gain 16.5 17.5 dB
vs. Frequency ±20 MHz +0.0/−0.2 +0.0/−0.2 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.4 ±0.4 dB
vs. Supply 3.15 V to 3.45 V, 4.75 V to 5.25 V ±0.2 ±0.06 dB
= 10 dBm per tone 30.1 40.1 dBm
Output Third-Order Intercept ∆f = 1 MHz, P
= 10 dBm per tone 36.0 45.8 dBm
Noise Figure 4.0 5.2 dB
FREQUENCY = 915 MHz
Gain1 15.8 16.0 16.8 17.6 dB
vs. Frequency ±46 MHz ±0.1 +0.1/−0.3 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.4 ±0.4 dB
vs. Supply 3.15 V to 3.45 V, 4.75 V to 5.25 V ±0.2 ±0.06 dB
Output 1 dB Compression Point 24.2 27.7 dBm
Output Third-Order Intercept ∆f = 1 MHz, P
= 10 dBm per tone 39.3 45.6 dBm
Noise Figure 4.1 5.1 dB
Gain 13.9 15.0 dB
vs. Frequency ±55 MHz +0.0/−0.1 +0.0/−0.1 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.5 ±0.5 dB
vs. Supply 3.15 V to 3.45 V, 4.75 V to 5.25 V ±0.2 ±0.07 dB
Output 1 dB Compression Point 23.2 27.2 dBm
Output Third-Order Intercept ∆f = 1 MHz, P
= 10 dBm per tone 34.6 45.5 dBm
Noise Figure 3.1 3.6 dB
FREQUENCY = 2140 MHz
Gain1 13.6 13.5 14.6 15.7 dB
vs. Frequency ±30 MHz +0.1/−0.0 ±0.1 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.6 ±0.6 dB
vs. Supply 3.15 V to 3.45 V, 4.75 V to 5.25 V ±0.2 ±0.06 dB
Output 1 dB Compression Point 25.3 29.1 dBm
Noise Figure 3.2 3.8 dB
Rev. 0 | Page 3 of 20
ADL5324 Data Sheet
OUT
vs. Temperature
−40°C ≤ TA ≤ +85°C
±1.0
±1.0 dB
OUT
3.3 V 5 V
Parameter Test Conditions/Comments Min Typ Max Min Typ Max Unit
FREQUENCY = 2630 MHz
Gain1 12.1 11.8 13.3 14.6 dB
vs. Frequency ±60 MHz ±0.1 +0.0/−0.2 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.7 ±0.7 dB
vs. Supply 3.15 V to 3.45 V, 4.75 V to 5.25 V ±0.2 ±0.07 dB
Output 1 dB Compression Point 23.6 27.8 dBm
Output Third-Order Intercept ∆f = 1 MHz, P
Noise Figure 3.6 4.3 dB
FREQUENCY = 3600 MHz
Gain 11.0 12.0 dB
vs. Frequency ±100 MHz +0.0/−0.7 +0.0/−0.8 dB
vs. Supply 3.15 V to 3.45 V, 4.75 V to 5.25 V ±0.2 ±0.05 dB
Output 1 dB Compression Point 25.0 28.5 dBm
Output Third-Order Intercept ∆f = 1 MHz, P
Noise Figure 3.8 4.4 dB
POWER INTERFACE Pin RFOUT
Supply Voltage 3.15 3.3 3.45 4.75 5 5.25 V
Supply Current 62 140 mA
vs. Temperature −40°C ≤ TA ≤ +85°C +4/−6 +5/−7 mA
Power Dissipation VSUP = 5 V 205 700 mW
1
Guaranteed maximum and minimum specified limits on this parameter are based on six sigma calculations.
= 10 dBm per tone 32.4 42.0 dBm
= 10 dBm per tone 29.3 36.6 dBm
Rev. 0 | Page 4 of 20
Data Sheet ADL5324
Freq (MHz)
S11
S21
S12
S22
Magnitude (dB)
Angle (°)
Magnitude (dB)
Angle (°)
Magnitude (dB)
Angle (°)
Magnitude (dB)
Angle (°)
TYPICAL SCATTERING PARAMETERS
VSUP = 5 V and TA = 25°C; the effects of the test fixture have been de-embedded up to the pins of the device.
Supply Voltage, VSUP 6.5 V
Input Power (50 Ω Impedance) 20 dBm
Internal Power Dissipation (Paddle Soldered) 1.9 W
Maximum Junction Temperature 150°C
Operating Temperature Range −40°C to +105°C
Storage Temperature Range −65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
Tabl e 4 lists the junction-to-air thermal resistance (θJA) and the
junction-to-paddle thermal resistance (θ
) for the ADL5324.
JC
Table 4. Thermal Resistance
Package Type θ
1
θ
2
Unit
3-Lead SOT-89 37 9 °C/W
1
Measured on Analog Devices evaluation board. For more information about
board layout, see the Soldering Information and Recommended PCB Land
Pattern section.
2
Based on simulation with JEDEC standard JESD51.
ESD CAUTION
Rev. 0 | Page 6 of 20
Loading...
+ 14 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.