ANALOG DEVICES ADL5323 Service Manual

1700 MHz to 2400 MHz GaAs

FEATURES

Internally matched to 50 Ω input and output Internally biased Operating frequency: 1700 MHz to 2400 MHz Gain: 20 dB OIP3: 43 dBm P1 dB: 28 dBm Noise figure: 5 dB 3 mm × 3 mm LFCSP Power supply: 5 V

APPLICATIONS

CDMA2000, WCDMA, and GSM base station transceivers and
high power amplifiers

GENERAL DESCRIPTION

The ADL5323 is a high linearity GaAs driver amplifier that is internally matched to 50 Ω for operation in the 1700 MHz to 2400 MHz frequency range. The amplifier, which has a gain of 20 dB, has been specially designed for use in the output stage of a cellular base station radio or as an input preamplifier in a multicarrier base station power amplifier. Matching and biasing are all on-chip. The ADL5323 is available in a Pb-free, 3 mm × 3 mm, 8-lead LFCSP with an operating temperature of
−40°C to +85°C.
Matched RF PA Predriver
ADL5323

FUNCTIONAL BLOCK DIAGRAM

VCC 5
GND 6
GND 7
RFIN 8
15
–20
–30
–40
–50
–60
(dBm)
–70
–80
–90
–100
–110
–115
CENTER 2.14G Hz SPAN 14.6848MHz
Figure 2. Single-Carrier WCDMA Spectral Plot @ 2140 MHz
BIAS CONTROL
OUTPUT
MATCH
INPUT
MATCH
ADL5323
Figure 1.
RBW = 30kHz VBW = 300kHz SWT = 2s RF ATT = 10dB
CH PWR = 0dBm ACP UP = –74.2dBc ACP LOW = –73.9dBc
1.46848MHz/
(No Noise Floor Correction, Test Model 1-64)
4 RFOUT
3 GND
2 VCC
1 VCC
06058-001
06058-014
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
ADL5323

TABLE OF CONTENTS

Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................5
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4

REVISION HISTORY

7/06—Revision 0: Initial Version
Typical Perf or m an c e Charac t e r istics ..............................................6
Basic Connections.............................................................................8
WCDMA Driving Application ....................................................8
Evaluation Board ...............................................................................9
Outline Dimensions ....................................................................... 10
Ordering Guide .......................................................................... 10
Rev. 0 | Page 2 of 12
ADL5323

SPECIFICATIONS

VCC = 5 V, TA = 25°C.
Table 1.
Parameter Conditions Min Typ Max Unit
FREQUENCY RANGE 1700 2400 MHz GAIN Frequency = 1960 MHz 18 20.5 24 dB
vs. Frequency 1930 MHz to 1990 MHz ±0.2 dB vs. Temperature −40°C to +85°C ±1.25 dB vs. Voltage 4.75 V to 5.25 V ±0.1 dB Frequency = 2140 MHz 17.5 19.5 21.8 dB vs. Frequency 2110 MHz to 2170 MHz ±0.25 dB vs. Temperature −40°C to +85°C ±1.5 dB vs. Voltage 4.75 V to 5.25 V ±0.1 dB
P1 dB Frequency = 1960 MHz 27.3 28 dBm
vs. Frequency 1930 MHz to 1990 MHz ±0.1 dBm vs. Temperature −40°C to +85°C ±0.8 dBm vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.5 dBm Frequency = 2140 MHz 27.3 28 dBm vs. Frequency 2110 MHz to 2170 MHz ±0.15 dBm vs. Temperature −40°C to +85°C ±1.1 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.5 dBm NOISE FIGURE Frequency = 1700 MHz to 2300 MHz 5 dB INPUT RETURN LOSS S OUTPUT RETURN LOSS S OIP3 Carrier spacing = 1 MHz, P
Frequency = 1960 MHz 42.5 dBm
vs. Frequency 1930 MHz to 1990 MHz ±0.5 dBm
vs. Temperature −40°C to +85°C ±1 dBm
vs. Voltage 4.75 V to 5.25 V ±2 dBm
Frequency = 2140 MHz 43.5 dBm
vs. Frequency 2110 MHz to 2170 MHz ±0.15 dBm
vs. Temperature −40°C to +85°C ±0.75 dBm
vs. Voltage 4.75 V to 5.25 V ±1.8 dBm POWER SUPPLY
Supply Voltage 4.75 5 5.25 V
Supply Current P
Operating Temperature −40 +85 °C
11
22
Frequency = 1930 MHz to 2170 MHz −15 dB Frequency = 1930 MHz to 2170 MHz −15 dB
= 5 dBm per carrier
OUT
= 5 dBm 320 mA
OUT
Rev. 0 | Page 3 of 12
ADL5323

ABSOLUTE MAXIMUM RATINGS

Table 2.
Parameter Rating
Supply Voltage, VPOS 6 V Input Power (re: 50 Ω) 18 dBm Equivalent Voltage 1.8 V rms θ
(Paddle Soldered) 28.5°C/W
JC
Maximum Junction Temperature 150°C Operating Temperature Range −40°C to +85°C Storage Temperature Range −65°C to +150°C Soldering Temperature 260°C

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Rev. 0 | Page 4 of 12
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