ANALOG DEVICES ADL5322 Service Manual

700 MHz to 1000 MHz GaAs

FEATURES

Internally matched to 50 Ω input and output Internally biased Operating frequency: 700 MHz to 1000 MHz Gain: 20 dB OIP3: 45 dBm P1 dB: 27 dBm Noise figure: 5 dB 3 mm × 3 mm LFCSP Power supply: 5 V

APPLICATIONS

CDMA2000, WCDMA, and GSM base station transceivers and
high power amplifiers

GENERAL DESCRIPTION

The ADL5322 is a high linearity GaAs driver amplifier that is internally matched to 50 Ω for operation in the 700 MHz to 1000 MHz frequency range. The amplifier, which has a gain of 20 dB, is specially designed for use in the output stage of a cellular base station radio or as an input preamplifier in a multicarrier base station power amplifier. Matching and biasing are all on-chip. The ADL5322 is available in a Pb-free, 3mm × 3 mm, 8-lead LFCSP package with an operating temperature from −40°C to +85°C.
Matched RF PA Predriver
ADL5322

FUNCTIONAL BLOCK DIAGRAM

VCC 5
GND 6
GND 7
RFIN 8
BIAS CONTROL
INPUT
MATCH
ADL5322
OUTPUT
MATCH
Figure 1.
4 RFOUT
3 GND
2 VCC
1 VCC
06057-001
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
ADL5322

TABLE OF CONTENTS

Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................5
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4

REVISION HISTORY

7/06—Revision 0: Initial Version
Typical Perf or m an c e Charac t e r istics ..............................................6
Basic Connections.............................................................................8
CDMA2000 Driving Application................................................8
Evaluation Board ............................................................................ 10
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 11
Rev. 0 | Page 2 of 12
ADL5322

SPECIFICATIONS

VCC = 5 V, TA = 25°C.
Table 1.
Parameter Conditions Min Typ Max Unit
FREQUENCY RANGE 700 1000 MHz GAIN Frequency = 850 MHz 19 20.3 21.4 dB
vs. Frequency 832 MHz to 870 MHz ±0.125 dB vs. Temperature −40°C to +85°C ±1 dB vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
Frequency = 900 MHz 18.6 19.9 21.1 dB
vs. Frequency 869 MHz to 894 MHz ±0.125 dB vs. Temperature −40°C to +85°C ±1 dB vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
Frequency = 950 MHz 18.3 19.6 20.8 dB
vs. Frequency 925 MHz to 960 MHz ±0.125 dB vs. Temperature −40°C to +85°C ±1.1 dB vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
P1 dB Frequency = 850 MHz 27.0 27.7 dBm
vs. Frequency 832 MHz to 870 MHz ±0.1 dBm vs. Temperature −40°C to +85°C ±1 dBm vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.3 dBm
Frequency = 900 MHz 27.3 27.9 dBm
vs. Frequency 869 MHz to 894 MHz ±0.1 dBm vs. Temperature −40°C to +85°C ±1 dBm vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.4 dBm
Frequency = 950 MHz 26.7 27.5 dBm
vs. Frequency 925 MHz to 960 MHz ±0.2 dBm vs. Temperature −40°C to +85°C ±1 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.4 dBm NOISE FIGURE Frequency = 830 MHz to 960 MHz 5 dB
INPUT RETURN LOSS Frequency = 830 MHz to 960 MHz −10 dB OUTPUT RETURN LOSS Frequency = 830 MHz to 960 MHz −10 dB OIP3 Carrier spacing = 1 MHz, P Frequency = 850 MHz 44.8 dBm
vs. Frequency 832 MHz to 870 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±3.0 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.5 dBm Frequency = 900 MHz 45.3 dBm
vs. Frequency 869 MHz to 894 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±2.7 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.8 dBm Frequency = 950 MHz 44.4 dBm
vs. Frequency 925 MHz to 960 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±2.2 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.8 dBm POWER SUPPLY
Supply Voltage 4.75 5 5.25 V
Supply Current P
Operating Temperature −40 +85 °C
= 5 dBm 320 mA
OUT
= 5 dBm per carrier
OUT
Rev. 0 | Page 3 of 12
ADL5322

ABSOLUTE MAXIMUM RATINGS

Table 2.
Parameter Rating
Supply Voltage, VPOS 6 V Input Power (re: 50 Ω) 18 dBm Equivalent Voltage 1.8 V rms θ
(Soldered) 28.5°C/W
JC
Maximum Junction Temperature 150°C Operating Temperature Range −40°C to +85°C Storage Temperature Range −65°C to +150°C Soldering Temperature 260°C

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Rev. 0 | Page 4 of 12
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