Wideband switch: −3 dB @ 4 GHz
ADG936 absorptive dual SPDT
ADG936-R reflective dual SPDT
High off isolation (36 dB @ 1 GHz)
Low insertion loss (0.9 dB dc to 1 GHz)
Single 1.65 to 2.75 V power supply
CMOS/LVTTL control logic
20-lead TSSOP and 4 mm × 4 mm LFCSP package
Low power consumption (1 µA max)
APPLICATIONS
Wireless communications
General-purpose RF switching
Dual-band applications
High speed filter selection
Digital transceiver front end switch
IF switching
Tuner modules
Antenna diversity switching
GENERAL DESCRIPTION
The ADG936/ADG936-R are wideband analog switches that
comprise two independently selectable SPDT switches using a
CMOS process to provide high isolation and low insertion loss
to 1 GHz. The ADG936 is an absorptive/matched dual SPDT
with 50 Ω terminated shunt legs; the ADG936-R is a reflective
dual SPDT. These devices are designed such that the isolation is
high over the dc to 1 GHz frequency range. They have on-board
CMOS control logic, eliminating the need for external
controlling circuitry. The control inputs are both CMOS and
–10
VDD = 2.5V
= 25°C
T
A
–20
–30
–40
–50
–60
OFF ISOLATION (dB)
–70
–80
Figure 3. Off Is olation v s. Frequency Figure 4. Inser tion Loss vs. Fre quency
S21
S12
FREQUENCY (Hz)
10G10k100k1M10M100M1G
04503-0-019
CMOS 1.65 V to 2.75 V, Dual SPDT
ADG936/ADG936-R
FUNCTIONAL BLOCK DIAGRAMS
RF1A
04503-0-001
RFCA
INA
ADG936-R
RFCB
INB
VDD= 2.5V
RFCA
INA
ADG936
RFCB
INB
50Ω
RF2A
50Ω
RF1B
50Ω
RF2B
50Ω
Figure 1. Figure 2.
LVTTL compatible. The low power consumption of these
CMOS devices makes them ideally suited for wireless
applications and general-purpose high frequency switching.
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VDD = 2.25 V to 2.75 V 1.7 V
VDD = 1.65 V to 1.95 V 0.65 V
CC
VDD = 2.25 V to 2.75 V 0.7 V
VDD = 1.65 V to 1.95 V 0.35 V
0 ≤ VIN ≤ 2.75 V ± 0.1 ± 1 µA
CAPACITANCE4
RF Port On Capacitance CRF ON f = 1 MHz 2.5 pF
Digital Input Capacitance C
DIG
f = 1 MHz 2 pF
POWER REQUIREMENTS
V
DD
Quiescent Power Supply Current I
1.65 2.75 V
DD
Digital inputs = 0 V or V
DD
0.1 1 µA
1
Temperature range B Version: −40°C to +85°C.
2
Typical values are at VDD = 2.5 V and 25°C, unless otherwise noted.
3
Operating frequency is the point at which insertion loss degrades by 1 dB.
4
Guaranteed by design, not subject to production test.
5
Video feedthrough is the dc transience at the output of any port of the switch when the control voltage is switched from high to low or low to high in a 50 Ω test
setup, measured with 1 ns rise time pulses and 500 MHz bandwidth.
1
V
V
CC
Rev. 0 | Page 3 of 16
ADG936/ADG936-R
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 2.
Parameter Rating
VDD to GND –0.5 V to +4 V
Inputs to GND –0.5 V to VDD + 0.3 V
Continuous Current 30 mA
Input Power 18 dBm
Operating Temperature Range
Industrial (B Version) –40°C to +85°C
Storage Temperature Range –65°C to +150°C
Junction Temperature 150°C
TSSOP Package
θJA Thermal Impedance 143°C/W
LFCSP Package
θJA Thermal Impedance (4-layer board) 30.4°C/W
Lead Temperature, Soldering (10 s) 300°C
IR Reflow, Peak Temperature (<20 s) 235°C
ESD 1 kV
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may
affect device reliability. Only one absolute maximum rating may
be applied at any one time.
Table 3. Truth Table
INx RF1x RF2x
0 Off On
1 On Off
1
RF1x/RF2x Off Port Inputs to Ground = –0.5 V to VDD – 0.5 V.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 4 of 16
ADG936/ADG936-R
A
A
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
RFC
V
GND
RF1A
GND
GND
RF1B
GND
GND
RFCB
DD
1
2
3
ADG936
ADG936-R
4
5
TOP VIEW
(Not to Scale)
6
7
8
9
10
20
GND
19
INA
18
GND
17
RF2A
16
GND
15
GND
14
RF2B
13
GND
12
INB
GND
11
04503-0-002
Figure 5. 20-Lead TSSOP (RU-20) Figure 6. 20-Lead 4 mm × 4 mm LFCSP (CP-20)
Table 4. Pin Function Descriptions
Pin No.
20-Lead
TSSOP
20-Lead
LFCSP Mnemonic Function
1 18 RFCA Common RF Port for Switch A.
2 19 V
DD
Power Supply Input. These parts can be operated from 1.65 V to 2.75 V. VDD should be
decoupled to GND.
3, 5, 6, 8, 9,
11,13, 15,
16, 18, 20
1, 3, 4, 6, 7,
9, 12,13, 15,
17, 20
GND Ground Reference Point for All Circuitry on the Part.
4 2 RF1A RF1A Port.
7 5 RF1B RF1B Port.
10 8 RFCB Common RF Port for Switch B.
12 10 INB Logic Control Input.
14 11 RF2B RF2B Port.
17 14 RF2A RF2A Port.
19 16 INA Logic Control Input.
GND
RF1A
GND
GND
RF1B
1
2
3
4
5
DD
GND18 RFC
GND
V
20
17
19
ADG936
ADG936-R
TOP VIEW
(Not to Scale)
7
8
9
GND6GND
GND
RFCB
INA
16
10
INB
15
14
13
12
11
GND
RF2A
GND
GND
RF2B
04503-0-003
Rev. 0 | Page 5 of 16
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