Wideband 4 GHz, 43 dB Isolation at 1 GHz,
CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
FEATURES
Wideband switch: −3 dB @ 4 GHz
Absorptive/reflective switches
High off isolation (43 dB @ 1 GHz)
Low insertion loss (0.8 dB @1 GHz)
Single 1.65 V to 2.75 V power supply
CMOS/LVTTL control logic
8-lead MSOP and tiny 3 mm × 3 mm LFCSP packages
Low power consumption (<1 µA)
APPLICATIONS
Wireless communications
General-purpose RF switching
Dual-band applications
High speed filter selection
Digital transceiver front end switch
IF switching
Tuner modules
Antenna diversity switching
GENERAL DESCRIPTION
The ADG918/ADG919 are wideband switches using a CMOS
process to provide high isolation and low insertion loss to
1 GHz. The ADG918 is an absorptive (matched) switch having
50 Ω terminated shunt legs, while the ADG919 is a reflective
switch. These devices are designed such that the isolation is
high over the dc to 1 GHz frequency range. They have on-board
CMOS control logic, thus eliminating the need for external
controlling circuitry. The control inputs are both CMOS and
0
VDD = 2.5V
–10
= 25°C
T
A
0
2
–
–30
–40
–50
–60
ISOLATION (dB)
–70
–80
–90
–100
10k100k1M10M100M1G10G
S12
S21
FREQUENCY (Hz)
Figure 2. Off Is olation vs. Fre quency
03335-A-003
ADG918/ADG919
FUNCTIONAL BLOCK DIAGRAMS
RFC
CTRL
RFC
CTRL
LVTTL compatible. The low power consumption of these
CMOS devices makes them ideally suited to wireless
applications and general-purpose high frequency switching.
PRODUCT HIGHLIGHTS
1. –43 dB Off Isolation @ 1 GHz.
2. 0.8 dB Insertion Loss @ 1 GHz.
3. Tiny 8-Lead MSOP/LFCSP Packages.
–0.4
–0.6
.
8
0
–
–1.0
–1.2
–1.4
–1.6
–1.8
–2.0
–2.2
–2.4
INSERTION LOSS (dB)
–2.6
–2.8
VDD = 2.5V
T
= 25°C
A
–3.0
–3.2
10k100k1M10M100M1G10G
Figure 3. Insertion Loss vs. Frequency
ADG918
50Ω
ADG919
Figure 1.
FREQUENCY (Hz)
50Ω
RF1
RF2
RF1
RF2
03335-A-001
03335-A-004
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
Change to ADG9xx Evaluation Board section...……………….13
Changes to Ordering Guide…………………………………….14
8/03 Revision 0: Initial Version
Rev. A | Page 2 of 16
ADG918/ADG919
SPECIFICATIONS
Table 1. V
= 1.65 V to 2.75 V, GND = 0 V, input power = 0 dBm, all specifications T
DD
MIN
to T
, unless otherwise noted.
MAX
B Version
Parameter Symbol Conditions Min Typ
2
Max Unit
AC ELECTRICAL CHARACTERISTICS
Operating Frequency
3
DC 2 GHz
3 dB Frequency4 4 GHz
Input Power4 0 V dc Bias 7 dBm
0.5 V dc Bias 16 dBm
Insertion Loss S21, S12 DC to 100 MHz; VDD = 2.5 V ± 10% 0.4 0.7 dB
500 MHz; VDD = 2.5 V ± 10% 0.5 0.8 dB
1000 MHz; VDD = 2.5 V ± 10% 0.8 1.25 dB
Isolation—RFC to RF1/RF2 S21, S12 100 MHz 57 60 dB
(CP Package) 500 MHz 46 49 dB
1000 MHz 36 43 dB
Isolation—RFC to RF1/RF2 S21, S12 100 MHz 55 60 dB
(RM Package) 500 MHz 43 47 dB
1000 MHz 34 37 dB
Isolation—RF1 to RF2 (Crosstalk) S21, S
100 MHz 55 58
12
(CP Package) 500 MHz 41 44 1000 MHz 31 37
Isolation—RF1 to RF2 (Crosstalk) S21, S
100 MHz 54 57
12
(RM Package) 500 MHz 39 42
1000 MHz 31 33
Return Loss (On Channel)
4
S11, S22 DC to 100 MHz 21 27 dB
500 MHz 22 27 dB
1000 MHz 22 26 dB
Return Loss (Off Channel)4 S11, S22 DC to 100 MHz 18 23 dB
ADG918 500 MHz 17 21 dB
1000 MHz 16 20 dB
On Switching Time4 tON 50% CTRL to 90% RF 6.6 10 ns
Off Switching Time4 t
Rise Time4 t
Fall Time4 t
1 dB Compression4 P
50% CTRL to 10% RF 6.5 9.5 ns
OFF
10% to 90% RF 6.1 9 ns
RISE
90% to 10% RF 6.1 9 ns
FALL
1000 MHz 17 dBm
–1 dB
Third Order Intermodulation Intercept IP3 900 MHz/901 MHz, 4 dBm 30 36 dBm
Video Feedthrough
5
2.5 mV p-p
DC ELECTRICAL CHARACTERISTICS
Input High Voltage V
V
Input Low Voltage V
V
Input Leakage Current II
VDD = 2.25 V to 2.75 V 1.7 V
INH
VDD = 1.65 V to 1.95 V 0.65 VCC V
INH
VDD = 2.25 V to 2.75 V 0.7 V
INL
VDD = 1.65 V to 1.95 V 0.35 VCCV
INL
0 ≤ V
≤ 2.75 V
IN
± 0.1 ± 1 µA
CAPACITANCE4
RF1/RF2, RF Port On Capacitance CRF ON f = 1 MHz 1.6 pF
CTRL Input Capacitance C
f = 1 MHz 2 pF
CTRL
POWER REQUIREMENTS
VDD 1.65 2.75 V
Quiescent Power Supply Current IDD Digital inputs = 0 V or VDD 0.1 1 µA
1
Temperature range B Version: −40°C to +85°C.
2
Typical values are at VDD = 2.5 V and 25°C, unless otherwise stated.
3
Point at which insertion loss degrades by 1 dB.
4
Guaranteed by design, not subject to production test. 5The dc transience at the output of any port of the switch when the control voltage is switched from high to
low or low to high in a 50 Ω test setup, measured with 1 ns rise time pulses and 500 MHz bandwidth.
1
Rev. A | Page 3 of 16
ADG918/ADG919
ABSOLUTE MAXIMUM RATINGS
Table 2. (TA = 25°C, unless otherwise noted.)
Parameter Rating
VDD to GND –0.5 V to +4 V
Inputs to GND –0.5 V to VDD + 0.3 V
Continuous Current 30 mA
Input Power 18 dBm
Operating Temperature Range
Industrial (B Version) –40°C to +85°C
Storage Temperature Range –65°C to +150°C
Junction Temperature 150°C
MSOP Package
θJA Thermal Impedance
LFCSP Package
θJA Thermal Impedance (2-layer board)
θJA Thermal Impedance (4-layer board)
Lead Temperature, Soldering (10 sec) 300°C
IR Reflow, Peak Temperature (<20 sec) 235°C
ESD 1 kV
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
1
206°C/W
84°C/W
48°C/W
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause
2
permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those listed
in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device
reliability. Only one absolute maximum rating may be applied at any one
time.
2
RF1/RF2 Off Port Inputs to Ground .............................. –0.5 V to VDD – 0.5 V
Rev. A | Page 4 of 16
ADG918/ADG919
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
V
CTRL
GND
RFC
DD
1
ADG918/
2
ADG919
3
TOP VIEW
(Not to Scale)
4
8
RF1
7
GND
6
GND
5
RF2
03335-A-002
Figure 4. 8-Lead MSOP (RM-8)
8-Lead 3 mm x 3 mm LFCSP (CP-8)
Table 3. Truth Table
CTRL Signal Path
0 RF2 to RFC
1 RF1 to RFC
Table 4. Pin Function Descriptions
Pin No. Mnemonic Function
1 VDD Power Supply Input. These parts can be operated from 1.65 V to 2.75 V, and VDD should be decoupled to GND.
2 CTRL CMOS or TTL Logic Level;
0->RF2 to RFC
1->RF1 to RFC
3, 6, 7 GND Ground Reference Point for All Circuitry on the Part
4 RFC COMMON RF Port for Switch
5 RF2 RF2 Port
8 RF1 RF1 Port
Rev. A | Page 5 of 16
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