Wideband switch: −3 dB @ 4 GHz
Absorptive/reflective switches
High off isolation (43 dB @ 1 GHz)
Low insertion loss (0.8 dB @1 GHz)
Single 1.65 V to 2.75 V power supply
CMOS/LVTTL control logic
8-lead MSOP and tiny 3 mm × 3 mm LFCSP packages
Low power consumption (<1 μA)
APPLICATIONS
Wireless communications
General-purpose RF switching
Dual-band applications
High speed filter selection
Digital transceiver front end switch
IF switching
Tuner modules
Antenna diversity switching
CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT
ADG918/ADG919
FUNCTIONAL BLOCK DIAGRAMS
ADG918
RF1
RFC
CTRL
ADG919
RFC
CTRL
Figure 1.
50Ω
50Ω
RF2
RF1
RF2
3335-001
GENERAL DESCRIPTION
The ADG918/ADG919 are wideband switches using a CMOS
process to provide high isolation and low insertion loss to
1 GHz. The ADG918 is an absorptive (matched) switch having
50 Ω terminated shunt legs, whereas the ADG919 is a reflective
switch. These devices are designed such that the isolation is
high over the dc to 1 GHz frequency range. They have on-board
CMOS control logic, thus eliminating the need for external
controlling circuitry. The control inputs are both CMOS and
0
VDD = 2.5V
–10
T
= 25°C
A
–
2
0
–30
–40
–50
TION (dB)
–60
ISO
–70
–80
–90
–100
10k100k1M10M100M1G10G
Figure 2. Off Isolation vs. Frequency
S12
S21
FREQUENCY ( Hz)
03335-003
LVTTL compatible. The low power consumption of these
CMOS devices makes them ideally suited to wireless and
general-purpose high frequency switching applications.
PRODUCT HIGHLIGHTS
1. –43 dB off isolation @ 1 GHz.
2. 0.8 dB insertion loss @ 1 GHz.
3. Tiny 8-lead MSOP/LFCSP packages.
0.4
–0.6
–
0
.8
–1.0
–1.2
–1.4
–1.6
–1.8
–2.0
–2.2
–2.4
INSERTIO N LOSS (d B)
–2.6
–2.8
VDD = 2.5V
T
= 25°C
A
–3.0
–3.2
10k100k1M10M100M1G10G
Figure 3. Insertion Loss vs. Frequency
FREQUENCY (Hz)
03335-004
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Updated Format .................................................................. Universal
Change to Data Sheet Title ............................................................... 1
Change to Features ............................................................................ 1
Change to Product Highlights ......................................................... 1
Changes to Specifications ................................................................. 3
Change to ADG9xx Evaluation Board section ........................... 13
Changes to Ordering Guide .......................................................... 14
8/03 Revision 0: Initial Version
Rev. C | Page 2 of 16
ADG918/ADG919
www.BDTIC.com/ADI
SPECIFICATIONS
VDD = 1.65 V to 2.75 V, GND = 0 V, input power = 0 dBm, all specifications T
B Version: −40°C to +85°C.
Table 1.
B Version
Parameter Symbol Conditions Min Typ
AC ELECTRICAL CHARACTERISTICS
Operating Frequency2 dc 2 GHz
3 dB Frequency3 4 GHz
Input Power3 0 V dc bias 7 dBm
0.5 V dc bias 16 dBm
Insertion Loss S21, S12 DC to 100 MHz; VDD = 2.5 V ± 10% 0.4 0.7 dB
500 MHz; VDD = 2.5 V ± 10% 0.5 0.8 dB
1000 MHz; VDD = 2.5 V ± 10% 0.8 1.25 dB
Isolation—RFC to RF1/RF2 S21, S12 100 MHz 57 60 dB
(CP Package) 500 MHz 46 49 dB
1000 MHz 36 43 dB
Isolation—RFC to RF1/RF2 S21, S12 100 MHz 55 60 dB
(RM Package) 500 MHz 43 47 dB
1000 MHz 34 37 dB
Isolation—RF1 to RF2 (Crosstalk) S21, S12 100 MHz 55 58
(RM Package) 500 MHz 39 42
1000 MHz 31 33
Return Loss (On Channel)
3
S
, S22 DC to 100 MHz 21 27 dB
11
500 MHz 22 27 dB
1000 MHz 22 26 dB
Return Loss (Off Channel)
3
S
, S22 DC to 100 MHz 18 23 dB
11
ADG918 500 MHz 17 21 dB
1000 MHz 16 20 dB
On Switching Time
Off Switching Time
Rise Time
Fall Time
3
t
3
t
1 dB Compression
3
3
t
3
P
tON 50% CTRL to 90% RF 6.6 10 ns
50% CTRL to 10% RF 6.5 9.5 ns
OFF
10% to 90% RF 6.1 9 ns
RISE
90% to 10% RF 6.1 9 ns
FAL L
1000 MHz 17 dBm
–1 dB
Third Order Intermodulation Intercept IP3 900 MHz/901 MHz, 4 dBm 28.5 36 dBm
Video Feedthrough
4
2.5 mV p-p
DC ELECTRICAL CHARACTERISTICS
Input High Voltage V
V
Input Low Voltage V
V
VDD = 2.25 V to 2.75 V 1.7 V
INH
VDD = 1.65 V to 1.95 V 0.65 VCC V
INH
VDD = 2.25 V to 2.75 V 0.7 V
INL
VDD = 1.65 V to 1.95 V 0.35 VCC V
INL
Input Leakage Current II 0 V ≤ VIN ≤ 2.75 V ± 0.1 ± 1 μA
MIN
to T
, unless otherwise noted. Temperature range for
MAX
1
Max Unit
Rev. C | Page 3 of 16
ADG918/ADG919
www.BDTIC.com/ADI
B Version
Parameter Symbol Conditions Min Typ
CAPACITANCE3
RF On Capacitance CRF ON f = 1 MHz 1.6 pF
CTRL Input Capacitance C
f = 1 MHz 2 pF
CTRL
POWER REQUIREMENTS
VDD 1.65 2.75 V
Quiescent Power Supply Current IDD Digital inputs = 0 V or VDD 0.1 1 μA
1
Typical values are at VDD = 2.5 V and 25°C, unless otherwise stated.
2
Point at which insertion loss degrades by 1 dB.
3
Guaranteed by design, not subject to production test.
4
The dc transience at the output of any port of the switch when the control voltage is switched from high to low or low to high in a 50 Ω test setup, measured with 1 ns
rise time pulses and 500 MHz bandwidth.
1
Max Unit
Rev. C | Page 4 of 16
ADG918/ADG919
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 2.
Parameter Rating
VDD to GND –0.5 V to +4 V
Inputs to GND –0.5 V to VDD + 0.3 V
Continuous Current 30 mA
Input Power 18 dBm
Operating Temperature Range
Industrial (B Version) –40°C to +85°C
Storage Temperature Range –65°C to +150°C
Junction Temperature 150°C
MSOP Package
Lead Temperature, Soldering (10 sec) 300°C
IR Reflow, Peak Temperature (<20 sec) 235°C
ESD 1 kV
1
RF1 and RF2 off port inputs to ground: −0.5 V to VDD – 0.5 V.
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. C | Page 5 of 16
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