ANALOG DEVICES ADG888 Service Manual

0.4 Ω CMOS, Dual DPDT Switch

S2BS2A

S1A

S4BS4AD4S

S3A

in WLCSP/LFCSP/TSSOP Packages

ADG888

FEATURES FUNCTIONAL BLOCK DIAGRAM

1.8 V to 5.5 V operation Ultralow on resistance

0.4 Ω typical

0.6 Ω maximum at 5 V supply

Excellent audio performance, ultralow distortion

0.07 Ω typical

0.14 Ω maximum R

flatness

High current carrying capability

400 mA continuous

600 mA peak current at 5 V Automotive temperature range: −40°C to +125°C Rail-to-rail switching operation Typical power consumption (<0.1 μW)

IN1

ADG888

APPLICATIONS

Cellular phones PDAs MP3 players Power routing Battery-powered systems PCMCIA cards Modems Audio and video signal routing Communication systems Data switching

IN2

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Figure 1.

05432-001

GENERAL DESCRIPTION

The ADG888 is a low voltage, dual DPDT (double pole double throw) CMOS device optimized for high performance audio switching. With its low power and small physical size, it is ideal for portable devices.

This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range making it an ideal solution for applications requiring minimal distortion through the switch. The ADG888 also has the capability of carrying large amounts of current, typically 400 mA at 5 V operation.

When on, each switch conducts equally well in both directions and has an input signal range that extends to the supplies. The ADG888 exhibits break-before-make switching action.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

The ADG888 is available in a 4 × 4 bump, 2.0 mm × 2.0 mm WLCSP; a 4 mm × 4 mm, 16-lead LFCSP; and a 16-lead TSSOP. These packages make the ADG888 the ideal solution for spaceconstrained applications.

PRODUCT HIGHLIGHTS

1. <0.6 Ω over full temperature range of −40°C to +125°C.

2. High current handling capability (400 mA continuous current at 5 V).

3. Low THD + N (0.008% typical).

4. Tiny 2 mm × 2 mm, 16-ball WLCSP package, and 16-lead LFCSP and TSSOP packages.

ADG888

Features.............................................................................................. 1

Pin Configuration and Function Descriptions..............................6

Applications....................................................................................... 1

Functional Block Diagram .............................................................. 1

General Description ......................................................................... 1

Product Highlights ........................................................................... 1

Specifications..................................................................................... 3

Absolute Maximum Ratings............................................................ 5

ESD Caution.................................................................................. 5

REVISION HISTORY

7/05—Revision 0: Initial Version

Truth Table .....................................................................................6

Typical Performance Characteristics..............................................7

Test Circuits........................................................................................9

Terminology.................................................................................... 11

Outline Dimensions....................................................................... 12

Ordering Guide .......................................................................... 13

Rev. 0 | Page 2 of 16

ADG888

SPECIFICATIONS

to +85°C

to +125°C Unit Test Conditions/Comments

or V

INL

Adjacent channel; R f = 100 kHz; see

Adjacent switch; R

Figure 23

see

INH

= 50 Ω, CL = 5 pF,

Figure 25

= 50 Ω, CL = 5 pF, f = 100 kHz;

VDD = 4.2 V to 5.5 V, GND = 0 V, unless otherwise noted.

Table 1.

−40°C −40°C

Parameter +25°C

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 0.4 Ω typ VDD = 4.2 V, VS = 0 V to VDD, IDS = 100 mA;

0.48 0.55 0.6 Ω max See Figure 16 On Resistance Match Between 0.04 Ω typ VDD = 4.2 V, VS = 2.2 V, IDS = 100 mA

Channels (∆RON) 0.06 0.07 0.075 Ω max

On Resistance Flatness (R

) 0.07 Ω typ VDD = 4.2 V, VS = 0 V to VDD,

FLAT (ON)

0.11 0.13 0.14 Ω max IDS = 100 mA LEAKAGE CURRENTS VDD = 5.5 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 17 Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 1 V or 4.5 V; see Figure 18

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

2.0 V min

INH

0.8 V max

INL

Input Current

or I

0.005 μA typ VIN = V

INL

INH

±0.1 μA max CIN, Digital Input Capacitance 2 pF typ

DYNAMIC CHARACTERISTICS

tON 22 ns typ RL = 50 Ω, CL = 35 pF 30 33 35 ns max VS = 3 V/0 V; see Figure 19 t

13 ns typ RL = 50 Ω, CL = 35 pF

OFF

17 18 19 ns max VS = 3 V/0 V; see Figure 19 Break-Before-Make Time Delay (t

) 9 ns typ RL = 50 Ω, CL = 35 pF

BBM

5 ns min VS1 = VS2 = 3 V; see Figure 20 Charge Injection 70 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 21 Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 22 Channel-to-Channel Crosstalk −99 dB typ

−67 dB typ

Total Harmonic Distortion (THD + N) 0.008 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p Insertion Loss −0.03 dB typ RL = 50 Ω, CL = 5 pF; see Figure 24

−3 dB Bandwidth 29 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 24 CS (OFF) 58 pF typ CD, CS (ON) 110 pF typ

POWER REQUIREMENTS VDD = 5.5 V

IDD 0.003 μA typ Digital inputs = 0 V or 5.5 V 1 4 μA max

Temperature range, Y version: −40°C to +125°C.

Guaranteed by design, not subject to production test.

Rev. 0 | Page 3 of 16

ADG888

VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted1.

Table 2.

−40°C −40°C Parameter +25°C to +85°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 0.5 Ω typ VDD = 2.7 V, VS = 0 V to VDD,

0.7 0.75 0.8 Ω max IS = 100 mA; see Figure 16 On Resistance Match Between 0.045 Ω typ VDD = 2.7 V, VS = 1 V,

Channels (∆RON) 0.065 0.07 0.075 Ω max IS = 100 mA

On Resistance Flatness (R

0.25 Ω max IS = 100 mA LEAKAGE CURRENTS VDD = 3.6 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 1 V/2.6 V, VD = 2.6 V/1 V; see Figure 17 Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 1 V or 2.6 V; see Figure 18

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

INH

0.8 V max

INL

Input Current

or I

0.005 μA typ VIN = V

INL

INH

±0.1 μA max CIN, Digital Input Capacitance 2 pF typ

DYNAMIC CHARACTERISTICS

tON 28 ns typ RL = 50 Ω, CL = 35 pF; see Figure 19 43 47 50 ns max VS = 1.5 V/0 V t

13 ns typ RL = 50 Ω, CL = 35 pF; see Figure 19

OFF

20 21 22 ns max VS = 1.5 V/0 V Break-Before-Make Time Delay (t 5 ns min VS1 = VS2 = 1.5 V; see Figure 20 Charge Injection 50 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 21 Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 22 Channel-to-Channel Crosstalk −99 dB typ

−67 dB typ

Total Harmonic Distortion (THD + N) 0.01 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1 V p-p Insertion Loss −0.04 dB typ RL = 50 Ω, CL = 5 pF; see Figure 24 –3 dB Bandwidth 29 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 24 CS (OFF) 60 pF typ CD, CS (ON) 115 pF typ

POWER REQUIREMENTS VDD = 3.6 V

IDD 0.003 μA typ Digital inputs = 0 V or 3.6 V

1 2 μA max

Temperature range, Y version: −40°C to +125°C.

Guaranteed by design, not subject to production test.

) 0.16 Ω typ VDD = 2.7 V, VS = 0 V to VDD,

FLAT (ON)

1.3 V min

or V

INL

INH

) 14 ns typ RL = 50 Ω, CL = 35 pF

BBM

Adjacent channel; R see

Figure 25

Adjacent switch; R

Figure 23

see

= 50 V, CL = 5 pF, f = 100 kHz;

= 50 Ω, CL = 5 pF, f = 100 kHz;

Rev. 0 | Page 4 of 16

ADG888

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted. Table 3.

Parameter Rating

VDD to GND −0.3 V to +6 V Analog Inputs1, Digital Inputs1

Peak Current, S or D

Continuous Current, S or D 400 mA Operating Temperature Range

Automotive (Y Version) −40°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C 16-Lead TSSOP Package

θJA Thermal Impedance

(4-Layer Board)

θJC Thermal Impedance 27.6°C/W 16-Lead WLCSP Package

θJA Thermal Impedance

(4-Layer Board)

16-Lead LFCSP Package

θJA Thermal Impedance

(4-Layer Board)

IR Reflow, Peak Temperature <20 sec 235°C

Overvoltages at IN, S, or D are clamped by internal diodes. Limit current to

the maximum ratings given.

−0.3 V to V 10 mA, whichever occurs first

600 mA (pulsed at 1 ms,

10% duty cycle max)

112°C/W

130°C/W

30.4°C/W

+ 0.3 V or

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Only one absolute maximum rating may be applied at any one time.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

Rev. 0 | Page 5 of 16

+ 11 hidden pages

ANALOG DEVICES ADG888 Service Manual

FEATURES FUNCTIONAL BLOCK DIAGRAM

APPLICATIONS

GENERAL DESCRIPTION

PRODUCT HIGHLIGHTS

TABLE OF CONTENTS

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

ESD CAUTION