1.8 V to 5.5 V single supply
Tiny 1.65 mm × 1.65 mm package
Low on resistance: 1.3 Ω at 5 V supply
High current-carrying capability:
300 mA
500 mA peak current at 5 V
Rail-to-rail operation
Typical power consumption: <0.01 μW
TTL-/CMOS-compatible inputs
APPLICATIONS
Cellular phones
PDAs
MP3 players
Battery-powered systems
Audio and video signal routing
Modems
PCMCIA cards
Hard drives
Relay replacement
continuous current
Switch/2:1 MUX in SOT-66 Package
ADG859
FUNCTIONAL BLOCK DIAGRAM
ADG859
1
IN
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.
D
05258-001
GENERAL DESCRIPTION
The ADG859 is a monolithic, CMOS SPDT (single pole, double
throw) switch that operates with a supply range of 1.8 V to
5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C.
The ADG859 also has the capability of carrying large amounts
of current, typically 300 mA at 5 V operation. These features
make the ADG859 an ideal solution for applications that are
space-constrained, such as handsets, PDAs, and MP3 players.
Each switch conducts equally well in both
The device exhibits break-before-make switching action,
thereby preventing momentary shorting when switching
channels.
The ADG859 is available in a tiny 6-lead SOT-66 package.
directions when on.
PRODUCT HIGHLIGHTS
1. Low on resistance: 2.3 Ω maximum over the full
temperature range of −40°C to +125°C.
2. H
igh current-carrying capability.
3. T
iny 6-lead, 1.65 mm × 1.65 mm SOT-66 package.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Analog Signal Range 0 to VDD V
On Resistance, RON 1.3 Ω typ VDD = 4.5 V, VS = 0 V to VDD, IS = −100 mA;
2.1 2.2 2.3 Ω max Figure 16
On Resistance Match Between Channels, ∆RON 0.01 Ω typ VDD = 4.5 V, VS = 4.5V, IS = −100 mA;
0.093 0.163 0.163 Ω max Figure 16
On Resistance Flatness, R
0.32 Ω typ VDD = 4.5 V, VS = 0 V to VDD, IS = −100 mA;
FLAT (ON)
0.45 0.6 0.65 Ω max Figure 16
LEAKAGE CURRENTS VDD = 5.5 V
Source Off Leakage, IS (Off) ±0.02 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; Figure 17
Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = 1 V or 4.5 V; Figure 18
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2 V min
INH
0.8 V max
INL
or I
0.005 μA typ VIN = V
INH
±0.1 μA max
Digital Input Capacitance, CIN 4 pF typ
DYNAMIC CHARACTERISTICS2
tON 8 ns typ RL = 50 Ω, CL = 35 pF
10 11 12 ns max VS = 3 V; Figure 19
t
4.5 ns typ RL = 50 Ω, CL = 35 pF
OFF
6 6.5 7 ns max VS = 3 V; Figure 19
Break-Before-Make Time Delay, t
4 ns typ RL = 50 Ω, CL = 35 pF
BBM
1 ns min VS1 = VS2 = 1.5 V; Figure 20
Charge Injection ±13 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 21
Off Isolation −78 dB typ
Channel-to-Channel Crosstalk −78 dB typ
−3 dB Bandwidth
Insertion Loss
Total Harmonic Distortion (THD + N) 0.062 %
CS (Off) 18 pF typ f = 1 MHz
CD, CS (On) 45 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V
IDD 0.001 μA typ Digital inputs = 0 V or 5.5 V
1 μA max
1
Temperature range is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
25°C
−40°C to
+85°C
−40°C to
+125°C Unit
Test Conditions/Comments
or V
INH
INL
= 50 Ω, CL = 5 pF, f = 100 kHz;
R
L
Figure 22
= 50 Ω, CL = 5 pF, f = 100 kHz;
R
L
Figure 23
125 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24
−0.11
dB typ RL = 50 Ω, CL = 5 pF; Figure 24
= 32 Ω, f = 20 Hz to 20 kHz,
R
L
= 3 V p-p; Figure 14
V
S
Rev. A | Page 3 of 16
ADG859
www.BDTIC.com/ADI
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.1
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range 0 to VDD V
On Resistance, RON 3 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = −100 mA;
4.3 4.5 4.7 Ω max Figure 16
On Resistance Match Between Channels, ∆RON 0.03 Ω typ VDD = 2.7 V, VS = 1.2 V, IS = −100 mA;
0.11 0.15 0.15 Ω max Figure 16
LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage, IS (Off) ±0.02 nA typ VS = 3 V/1 V, VD = 1 V/3 V; Figure 17
Channel On Leakage, ID, IS (On) ±0.05 nA typ VS = VD = 1 V or 3 V; Figure 18
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.0 V min
INH
0.8 V max VDD = 3 V to 3.6 V
INL
0.7 V max VDD = 2.7 V
Input Current, I
or IIN 0.005 μA typ VIN = V
INL
±0.1 ±0.1 μA max
Digital Input Capacitance, CIN 4 pF typ
DYNAMIC CHARACTERISTICS2
tON 11 ns typ RL = 50 Ω, CL = 35 pF
15 16 17 ns max VS = 1.5 V; Figure 19
t
6 ns typ RL = 50 Ω, CL = 35 pF
OFF
9.5 10 11 ns max VS = 1.5 V; Figure 19
Break-Before-Make Time Delay, t
5 ns typ RL = 50 Ω, CL = 35 pF
BBM
1 ns min VS1 = VS2 = 1.5 V; Figure 20
Charge Injection ±7 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 21
Off Isolation −78 dB typ
Channel-to-Channel Crosstalk −78 dB typ
−3 dB Bandwidth 125 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24
Insertion Loss
Total Harmonic Distortion (THD + N) 0.1 %
CS (Off) 18 pF typ f = 1 MHz
CD, CS (On) 46 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 3.6 V
IDD 0.001 μA typ Digital inputs = 0 V or 3.6 V
1 μA max
1
Temperature range is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
25°C
−0.11
−40°C to
+85°C
−40°C to
+125°C Unit
Test Conditions/Comments
or V
INH
INL
= 50 Ω, CL = 5 pF, f = 100 kHz;
R
L
Figure 22
S1 to S2; R
= 50 Ω, CL = 5 pF,
L
f = 100 kHz; Figure 23
dB typ RL = 50 Ω, CL = 5 pF; Figure 24
= 32 Ω, f = 20 Hz to 20 kHz,
R
L
V
= 2 V p-p; Figure 14
S
Rev. A | Page 4 of 16
ADG859
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
VDD to GND −0.3 V to +7.0 V
Analog Inputs
Digital Inputs
Peak Current, S or D
5 V Operation 500 mA
3 V Operation 460 mA
Continuous Current, S or D
5 V Operation 300 mA
3 V Operation 275 mA
Operating Temperature Range
Automotive −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
SOT-66 Package (4-Layer Board)
θJA Thermal Impedance 191°C/W
Lead-Free Reflow
Peak Temperature
Time at Peak Temperature
1
Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
1
1
−0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
−0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
260 (+0/−5)°C
10 sec to 40 sec
Stresses above those listed under Absolute Maximum Ratings
ma
y cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
Table 4. Truth Table
Logic (IN) Switch 2 (S2) Switch 1 (S1)
0 Off On
1 On Off
ESD CAUTION
Rev. A | Page 5 of 16
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