ANALOG DEVICES ADG859 Service Manual

1.3 Ω CMOS, 1.8 V to 5.5 V Single SPDT
S2S
www.BDTIC.com/ADI

FEATURES

1.8 V to 5.5 V single supply Tiny 1.65 mm × 1.65 mm package Low on resistance: 1.3 Ω at 5 V supply High current-carrying capability:
300 mA
500 mA peak current at 5 V Rail-to-rail operation Typical power consumption: <0.01 μW TTL-/CMOS-compatible inputs

APPLICATIONS

Cellular phones PDAs MP3 players Battery-powered systems Audio and video signal routing Modems PCMCIA cards Hard drives Relay replacement
continuous current
Switch/2:1 MUX in SOT-66 Package
ADG859

FUNCTIONAL BLOCK DIAGRAM

ADG859
1
IN
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.
D
05258-001

GENERAL DESCRIPTION

The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to
5.5 V. It is designed to offer low on resistance of 2.3 Ω maxi­mum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of carrying large amounts of current, typically 300 mA at 5 V operation. These features make the ADG859 an ideal solution for applications that are space-constrained, such as handsets, PDAs, and MP3 players.
Each switch conducts equally well in both The device exhibits break-before-make switching action, thereby preventing momentary shorting when switching channels.
The ADG859 is available in a tiny 6-lead SOT-66 package.
directions when on.

PRODUCT HIGHLIGHTS

1. Low on resistance: 2.3 Ω maximum over the full
temperature range of −40°C to +125°C.
2. H
igh current-carrying capability.
3. T
iny 6-lead, 1.65 mm × 1.65 mm SOT-66 package.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
ADG859
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TABLE OF CONTENTS

Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5

REVISION HISTORY

12/06—Rev. 0 to Rev. A
Changes to the Ordering Guide.................................................... 13
6/05—Revision 0: Initial Version
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions..............................6
Typical Perf or m an c e Charac t e ristic s ..............................................7
Test Ci r c ui t s..................................................................................... 10
Te r mi n ol o g y .................................................................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
Rev. A | Page 2 of 16
ADG859
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SPECIFICATIONS

VDD = 5 V ± 10%, GND = 0 V, unless otherwise noted.1
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range 0 to VDD V On Resistance, RON 1.3 Ω typ VDD = 4.5 V, VS = 0 V to VDD, IS = −100 mA;
2.1 2.2 2.3 Ω max Figure 16 On Resistance Match Between Channels, ∆RON 0.01 Ω typ VDD = 4.5 V, VS = 4.5V, IS = −100 mA;
0.093 0.163 0.163 Ω max Figure 16 On Resistance Flatness, R
0.32 Ω typ VDD = 4.5 V, VS = 0 V to VDD, IS = −100 mA;
FLAT (ON)
0.45 0.6 0.65 Ω max Figure 16 LEAKAGE CURRENTS VDD = 5.5 V
Source Off Leakage, IS (Off) ±0.02 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; Figure 17 Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = 1 V or 4.5 V; Figure 18
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current, I
INL
2 V min
INH
0.8 V max
INL
or I
0.005 μA typ VIN = V
INH
±0.1 μA max Digital Input Capacitance, CIN 4 pF typ
DYNAMIC CHARACTERISTICS2
tON 8 ns typ RL = 50 Ω, CL = 35 pF 10 11 12 ns max VS = 3 V; Figure 19 t
4.5 ns typ RL = 50 Ω, CL = 35 pF
OFF
6 6.5 7 ns max VS = 3 V; Figure 19 Break-Before-Make Time Delay, t
4 ns typ RL = 50 Ω, CL = 35 pF
BBM
1 ns min VS1 = VS2 = 1.5 V; Figure 20 Charge Injection ±13 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 21 Off Isolation −78 dB typ
Channel-to-Channel Crosstalk −78 dB typ
3 dB Bandwidth Insertion Loss
Total Harmonic Distortion (THD + N) 0.062 %
CS (Off) 18 pF typ f = 1 MHz CD, CS (On) 45 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V
IDD 0.001 μA typ Digital inputs = 0 V or 5.5 V 1 μA max
1
Temperature range is 40°C to +125°C.
2
Guaranteed by design; not subject to production test.
25°C
40°C to +85°C
40°C to +125°C Unit
Test Conditions/Comments
or V
INH
INL
= 50 Ω, CL = 5 pF, f = 100 kHz;
R
L
Figure 22
= 50 Ω, CL = 5 pF, f = 100 kHz;
R
L
Figure 23
125 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24
0.11
dB typ RL = 50 Ω, CL = 5 pF; Figure 24
= 32 Ω, f = 20 Hz to 20 kHz,
R
L
= 3 V p-p; Figure 14
V
S
Rev. A | Page 3 of 16
ADG859
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VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.1
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range 0 to VDD V On Resistance, RON 3 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = −100 mA;
4.3 4.5 4.7 Ω max Figure 16 On Resistance Match Between Channels, ∆RON 0.03 Ω typ VDD = 2.7 V, VS = 1.2 V, IS = −100 mA;
0.11 0.15 0.15 Ω max Figure 16 LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage, IS (Off) ±0.02 nA typ VS = 3 V/1 V, VD = 1 V/3 V; Figure 17 Channel On Leakage, ID, IS (On) ±0.05 nA typ VS = VD = 1 V or 3 V; Figure 18
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
2.0 V min
INH
0.8 V max VDD = 3 V to 3.6 V
INL
0.7 V max VDD = 2.7 V Input Current, I
or IIN 0.005 μA typ VIN = V
INL
±0.1 ±0.1 μA max Digital Input Capacitance, CIN 4 pF typ
DYNAMIC CHARACTERISTICS2
tON 11 ns typ RL = 50 Ω, CL = 35 pF 15 16 17 ns max VS = 1.5 V; Figure 19 t
6 ns typ RL = 50 Ω, CL = 35 pF
OFF
9.5 10 11 ns max VS = 1.5 V; Figure 19 Break-Before-Make Time Delay, t
5 ns typ RL = 50 Ω, CL = 35 pF
BBM
1 ns min VS1 = VS2 = 1.5 V; Figure 20 Charge Injection ±7 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 21 Off Isolation −78 dB typ
Channel-to-Channel Crosstalk −78 dB typ
−3 dB Bandwidth 125 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24 Insertion Loss
Total Harmonic Distortion (THD + N) 0.1 %
CS (Off) 18 pF typ f = 1 MHz CD, CS (On) 46 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 3.6 V
IDD 0.001 μA typ Digital inputs = 0 V or 3.6 V 1 μA max
1
Temperature range is 40°C to +125°C.
2
Guaranteed by design; not subject to production test.
25°C
0.11
−40°C to +85°C
−40°C to +125°C Unit
Test Conditions/Comments
or V
INH
INL
= 50 Ω, CL = 5 pF, f = 100 kHz;
R
L
Figure 22 S1 to S2; R
= 50 Ω, CL = 5 pF,
L
f = 100 kHz; Figure 23
dB typ RL = 50 Ω, CL = 5 pF; Figure 24
= 32 Ω, f = 20 Hz to 20 kHz,
R
L
V
= 2 V p-p; Figure 14
S
Rev. A | Page 4 of 16
ADG859
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ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
VDD to GND −0.3 V to +7.0 V Analog Inputs
Digital Inputs
Peak Current, S or D
5 V Operation 500 mA 3 V Operation 460 mA
Continuous Current, S or D
5 V Operation 300 mA 3 V Operation 275 mA
Operating Temperature Range
Automotive −40°C to +85°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C SOT-66 Package (4-Layer Board)
θJA Thermal Impedance 191°C/W Lead-Free Reflow
Peak Temperature
Time at Peak Temperature
1
Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
1
1
−0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first
−0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first
260 (+0/−5)°C 10 sec to 40 sec
Stresses above those listed under Absolute Maximum Ratings ma
y cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.
Table 4. Truth Table
Logic (IN) Switch 2 (S2) Switch 1 (S1)
0 Off On 1 On Off

ESD CAUTION

Rev. A | Page 5 of 16
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