Analog Devices ADG849 Datasheet

3 V/5 V CMOS

FEATURES

Ultralow on-resistance:

0.5 Ω typical

0.8 Ω maximum at 5 V supply

Excellent audio performance, ultralow distortion:

0.13 Ω typical

0.24 Ω maximum R

High current carrying capability:

400 mA continuous current

600 mA peak current at 5 V Automotive temperature range: –40°C to +125°C Rail-to-rail operation Typical power consumption (<0.01 µW) Pin-compatible upgrade for the ADG749 and ADG779

APPLICATIONS

Cellular phones PDAs Battery-powered systems Audio and video signal routing Modems PCMCIA cards Hard drives Relay replacement

GENERAL DESCRIPTION

The ADG849 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer ultralow on-resistance values of typically

0.5 Ω. This design makes the ADG849 an ideal solution for applications that require minimal distortion through the switch. The ADG849 also has the capability of carrying large amounts of current, typically 600 mA at 5 V operation.

flatness

ON

0.5 Ω SPDT/2:1 Mux in SC70 ADG849

FUNCTIONAL BLOCK DIAGRAM

ADG849

S2

S1

IN

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Figure 1.

PRODUCT HIGHLIGHTS

1. Very low on-resistance, 0.5 Ω typical.

2. Tiny, 6-lead SC70 package.

3. Low power dissipation. The CMOS construction ensures

low power dissipation.

4. High current carrying capability.

5. Low THD + noise (0.01% typ).

D

04737-0-001

Each switch of the ADG849 conducts equally well in both directions when on. The device exhibits break-before-make switching action, thus preventing momentary shorting when switching channels.

The ADG849 is available in a tiny, 6-lead SC70 package, making it the ideal candidate for space-constrained applications.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

www.analog.com

ADG849

TABLE OF CONTENTS

Specifications..................................................................................... 3

Typical Perfor m a n c e Character i stics ..............................................7

Absolute Maximum Ratings............................................................ 5

ESD Caution.................................................................................. 5

Pin Configuration and Function Descriptions............................. 6

REVISION HISTORY

7/04—Revision 0: Initial Version

Tes t Ci rc u it s ........................................................................................9

Outline Dimensions....................................................................... 11

Ordering Guide .......................................................................... 11

Rev. 0| Page 2 of 12

ADG849

SPECIFICATIONS

Table 1. VDD = 4.5 V to 5.5 V, GND = 0 V

Parameter +25°C

ANALOG SWITCH

Analog Signal Range 0 V to V On-Resistance (RON) 0.5 Ω typ

0.6 0.7 0.8 Ω max See Figure 15 On-Resistance Match Between Channels

(∆R

)

ON

0.095 0.11 0.125 Ω max On-Resistance Flatness (R

) 0.13 Ω typ

FLAT(ON)

0.18 0.22 0.24 Ω max

LEAKAGE CURRENTS VDD = 5.5 V

Source Off Leakage, IS (Off) ±0.01 nA typ

Channel On Leakage, ID, IS (On) ±0.04 nA typ

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

INH

INL

Input Current

I

or I

INL

INH

±0.1 µA max

CIN, Digital Input Capacitance 2.5 pF typ

DYNAMIC CHARACTERISTICS

t

ON

2

15 17 18 ns max VS = 3 V, see Figure 18

t

OFF

13 14 15 ns max VS = 3 V, see Figure 18

Break-Before-Make Time Delay, t

BBM

1 ns min

Charge Injection 50 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20 Off Isolation –64 dB typ

Channel-to-Channel Crosstalk –64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,

Bandwidth: –3 dB 38 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 23 Insertion Loss 0.04 dB typ RL = 50 Ω, CL = 5 pF, see Figure 23 THD + N 0.01 %

CS (Off) 52 pF typ CD, CS (On) 145 pF typ

POWER REQUIREMENTS VDD = 5.5 V, Digital Inputs = 0 V or 5.5 V

I

DD

1.0 µA max

1

The temperature range for the Y version is –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

1

–40°C to +85°C

Ω typ

0.05

–40°C to +125°C

DD

Unit Test Conditions/Comments

V

= 0 V to VDD, IDS = –100 mA

S

V

= 0.85 V, IDS = –100 mA

S

V

= 0 V to VDD, IDS = –100 mA

S

= 4.5 V/1 V, VD = 1 V/4.5 V,

V

S

see Figure 16

= VD = 1 V, or VS = VD = 4.5 V,

V

S

see Figure 17

2.0 V min

0.8 V max

0.005 µA typ VIN = V

11 ns typ RL = 50 Ω, CL = 35 pF

9 ns typ RL = 50 Ω, CL = 35 pF

5 ns typ

= 50 Ω, CL = 35 pF, V

R

L

see Figure 19

= 50 Ω, CL = 5 pF, f = 100 kHz

R

L

see Figure 21

see Figure 22

= 32 Ω, f = 20 Hz to 20 kHz,

R

L

Vs = 2 V p-p

0.001 µA typ

INL

or V

INH

= V

= 3 V,

S1

S2

Rev. 0| Page 3 of 12

ADG849

Table 2. VDD = 2.7 V to 3.6 V, GND = 0 V

Parameter +25°C

1

–40°C to +85°C

–40°C to +125°C

Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V

DD

V

On-Resistance (RON) 0.72 Ω typ VS = 0 V to VDD, IDS = –100 mA

1.1 1.1 1.2 Ω max See Figure 15 On-Resistance Match Between Channels

)

(∆R

ON

0.05

Ω typ V

= 1.5 V, IDS = –100 mA

S

0.095 0.11 0.125 Ω max On-Resistance Flatness (R

) 0.3 Ω typ VS = 0 V to VDD, IDS = –100 mA

FLAT(ON)

LEAKAGE CURRENTS VDD = 3.6 V

Source Off Leakage, IS (Off) ±0.1 nA typ VS = 3 V/1 V, VD = 1 V/3 V, see Figure 16 Channel On Leakage, ID, IS (On) ±0.01 nA typ

= VD = 1 V, or VS = VD = 3 V;

V

S

see Figure 17

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

INH

INL

2.0 V min

0.8 V max VDD = 3 V to 3.6 V

0.7 V max VDD = 2.7 V Input Current

I

or I

INL

INH

0.005 µA typ VIN = V

INL

or V

INH

±0.1 µA max

CIN, Digital Input Capacitance 2.5 pF typ

DYNAMIC CHARACTERISTICS

t

ON

2

16 ns typ RL = 50 Ω, CL = 35 pF

22 24 26 ns max VS = 1.5 V, see Figure 18

t

OFF

13 ns typ RL = 50 Ω, CL = 35 pF

18 20 22 ns max VS = 1.5 V, see Figure 18

Break-Before-Make Time Delay, t

BBM

7 ns typ

= 50 Ω, CL = 35 pF, V

R

L

= V

= 1.5 V,

S1

S2

see Figure 19

1 ns min

Charge Injection 30 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20 Off Isolation –64 dB typ

= 50 Ω, CL = 5 pF, f = 100 kHz,

R

L

see Figure 21

Channel-to-Channel Crosstalk –64 dB typ

= 50 Ω, CL = 5 pF, f = 100 kHz,

R

L

see Figure 22 Bandwidth: –3 dB 38 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 23 Insertion Loss 0.04 dB typ RL = 50 Ω CL = 5 pF, see Figure 23 THD + N 0.02 %

= 32 Ω, f = 20 Hz to 20 kHz,

R

L

Vs = 1 V p-p CS (Off) 55 pF typ f = 1 MHz CD, CS (On) 147 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = 3.6 V Digital Inputs = 0 V or 3.6 V

I

DD

0.001 µA typ

1.0 µA max

1

The temperature range for the Y version is –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Rev. 0| Page 4 of 12