1.65 V to 3.6 V single supply
High current carrying capability
300 mA continuous current
500 mA peak current
Automotive temperature range: –40°C to +125°C
Rail-to-rail operation
Typical power consumption (<0.01 µW)
APPLICATIONS
Handsets
PDAs
MP3 players
Power routing
Battery-powered systems
Communication systems
Modems
PCMCIA cards
GENERAL DESCRIPTION
The ADG841 and ADG842 are low voltage CMOS devices
containing a single-pole, single-throw (SPST) switch. The
ADG841 is closed for a Logic 1 input and the ADG842 is open
for a Logic 1 input. The devices offer ultralow on resistance of
less than 0.48 Ω over the full temperature range. The ADG841/
ADG842 are fully specified for 3.3 V, 2.5 V, and 1.8 V supply
operation.
flatness
ON
Single SPST Switches in SC70
ADG841/ADG842
FUNCTIONAL BLOCK DIAGRAM
ADG841
S
IN
D
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.
PRODUCT HIGHLIGHTS
1. <0.48 Ω over full temperature range of –40°C to +125°C.
2. Compatible with 1.8 V CMOS logic.
3. High current handling capability (300 mA continuous
current at 3.3 V).
4. Low THD + N (0.02% typ).
5. Tiny SC70 package.
Table 1. ADG841/ADG842 Truth Table
Logic (IN) ADG841 ADG842
0 Off On
1 On Off
S
IN
ADG842
D
05424-001
Each switch conducts equally well in both directions when on,
and has an input signal range that extends to the supplies. The
ADG841/ADG842 exhibit break-before-make switching action.
The ADG841/ADG842 are available in a 6-lead SC70 package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
−40°C −40°C
Parameter +25°C to +85°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V VDD = 2.7 V
On Resistance (RON) 0.28 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IDS = −100 mA
0.37 0.43 0.48 Ω max Figure 18
On Resistance Flatness (R
0.034 0.044 0.052 Ω max
LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; Figure 19
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 3.3 V; Figure 20
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
±0.1 µA max
Digital Input Capacitance, CIN 3.2 pF typ
DYNAMIC CHARACTERISTICS2
tON 10.5 ns typ RL = 50 Ω, CL = 35 pF
14 15.5 16.5 ns max VS = 1.5 V; Figure 21
t
6.5 ns typ RL = 50 Ω, CL = 35 pF
OFF
7.8 8 8.2 ns max VS = 1.5 V; Figure 21
Charge Injection 200 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 22
Off Isolation −54 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23
Total Harmonic Distortion (THD + N) 0.012 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p
Insertion Loss −0.02 dB typ RL = 50 Ω, CL = 5 pF; Figure 24
−3 dB Bandwidth 21 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24
CS (OFF) 160 pF typ
CD (OFF) 160 pF typ
CD, CS (ON) 238 pF typ
POWER REQUIREMENTS VDD = 3.6 V
IDD 0.003 µA typ Digital inputs = 0 V or 3.6 V
1 4 µA max
1
Temperature range is −40°C to +125°C
2
Guaranteed by design; not subject to production test.
INH
0.8 V max
INL
or I
0.005 µA typ VIN = V
INL
INH
) 0.025 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IDS = −100 mA
−40°C −40°C
Parameter +25°C to +85°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.3 Ω typ VDD = 2.3 V, VS = 0 V to VDD, IDS = −100 mA
0.35 0.4 0.45 Ω max Figure 18
On Resistance Flatness (R
0.04 0.05 0.05 Ω max
LEAKAGE CURRENTS VDD = 2.7 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 19
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V; Figure 20
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
±0.1 µA max
Digital Input Capacitance, CIN 3.2 pF typ
DYNAMIC CHARACTERISTICS2
tON 13 ns typ RL = 50 Ω, CL = 35 pF
16.5 18 19 ns max VS = 1.5 V; Figure 21
t
7 ns typ RL = 50 Ω, CL = 35 pF
OFF
8.2 8.4 8.6 ns max VS = 1.5 V; Figure 21
Charge Injection 150 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 22
Off Isolation −54 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23
Total Harmonic Distortion (THD + N) 0.022 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p
Insertion Loss −0.02 dB typ RL = 50 Ω, CL = 5 pF; Figure 24
–3 dB Bandwidth 21 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24
CS (OFF) 170 pF typ
CD (OFF) 170 pF typ
CD, CS (ON) 238 pF typ
POWER REQUIREMENTS VDD = 2.7 V
IDD 0.003 µA typ Digital inputs = 0 V or 2.7 V
1 4 µA max
1
Temperature range is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
INH
0.7 V max
INL
or I
INL
0.005 µA typ VIN = V
INH
) 0.025 Ω typ VDD = 2.3 V, VS = 0 V to VDD, IDS = −100 mA
−40°C −40°C
Parameter +25°C to +85°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.37 Ω typ VDD = 1.8 V, VS = 0 V to VDD, IDS = −100 mA
0.4 0.84 0.84 Ω max Figure 18
0.6 1.8 1.8 Ω max VDD = 1.65 V, VS = 0 V to VDD, IDS = −100 mA
On Resistance Flatness (R
LEAKAGE CURRENTS VDD = 1.95 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V; Figure 19
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V; Figure 20
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
±0.1 µA max
Digital Input Capacitance, CIN 4 pF typ
DYNAMIC CHARACTERISTICS2
tON 19 ns typ RL = 50 Ω, CL = 35 pF
26 28 30 ns max VS = 1.5 V; Figure 21
t
8 ns typ RL = 50 Ω, CL = 35 pF
OFF
9.5 9.8 10 ns max VS = 1.5 V; Figure 21
Charge Injection 100 pC typ VS = 1 V, RS = 0 V, CL = 1 nF; Figure 22
Off Isolation −54 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23
Total Harmonic Distortion (THD + N) 0.14 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.2 V p-p
Insertion Loss −0.02 dB typ RL = 50 Ω, CL = 5 pF; Figure 24
–3 dB Bandwidth 21 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24
CS (OFF) 178 pF typ
CD (OFF) 178 pF typ
CD, CS (ON) 238 pF typ
POWER REQUIREMENTS VDD = 1.95 V
IDD 0.003 µA typ Digital inputs = 0 V or 1.95 V
1 4 µA max
1
Temperature range −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
INH
0.35 VDD V max
INL
or I
0.005 µA typ VIN = V
INL
INH
) 0.17 Ω typ VDD = 1.65 V, VS = 0 V to VDD, IDS = −100 mA
FLAT (ON)
0.65 VDD V min
or V
INH
INL
Rev. 0 | Page 5 of 16
ADG841/ADG842
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameter Rating
VDD to GND −0.3 V to +4.6 V
Analog Inputs1 −0.3 V to VDD + 0.3 V
Digital Inputs1
Peak Current, S or D
3.3 V Operation 500 mA
2.5 V Operation 460 mA
1.8 V Operation
Continuous Current, S or D
3.3 V Operation 300 mA
2.5 V Operation 275 mA
1.8 V Operation 250 mA
Operating Temperature Range
Automotive (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
SC70 Package
Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
−0.3 V to 4.6 V or 10 mA,
whichever occurs first
420 mA (pulsed at 1 ms,
10% duty cycle max)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 6 of 16
ADG841/ADG842
G
www.BDTIC.com/ADI
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
D
1
ADG841/
ADG842
S
2
TOP VIEW
(Not to Scale)
ND
3
NC = NO CONNECT
Figure 2. 6-Lead SC70
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1 D Drain Terminal. Can be an input or output.
2 S Source Terminal. Can be an input or output.
3 GND Ground (0 V) Reference.
4 IN Logic Control Input.
5 NC No Connect.
6 VDD Most Positive Power Supply Potential.
V
6
DD
NC
5
IN
4
05424-002
Rev. 0 | Page 7 of 16
ADG841/ADG842
www.BDTIC.com/ADI
TYPICAL PERFORMANCE CHARACTERISTICS
0.350
T
= 25°C
A
= 100mA
I
DS
0.325
V
= 3V
0.300
0.275
0.250
ON RESISTANCE (Ω)
0.225
0.200
Figure 3. On Resistance vs. V
0.350
= 25°C
T
A
= 100mA
I
DS
0.325
0.300
0.275
0.250
ON RESISTANCE (Ω)
0.225
0.200
Figure 4. On Resistance vs. V
0.50
TA = 25°C
= 100mA
I
DS
0.45
0.40
0.35
0.30
V
= 1.8V
DD
0.25
0.20
0.15
ON RESISTANCE (Ω)
0.10
0.05
0
Figure 5. On Resistance vs. V
VDD = 3.3V
SOURCE VOLTAGE (V)
V
= 2.5V
DD
SOURCE VOLTAGE (V)
SOURCE VOLTAGE (V)
DD
V
DD
(VS) VDD = 3.3 V ± 0.3 V
D
VDD = 2.3V
VDD = 2.7V
(VS) VDD = 2.5 V ± 0.2 V
D
VDD = 1.65V
VDD = 1.95V
(VS) VDD = 1.8 V ± 0.15 V
D
= 3.6V
3.600.40.81.21.62.02.42.83.2
05424-003
2.500.51.01.52.0
05424-004
2.000.40.81.21.6
05424-005
0.50
V
= 3.3V
DD
= 100mA
I
DS
0.45
0.40
0.35
0.30
0.25
0.20
0.15
ON RESISTANCE (Ω)
0.10
0.05
0
Figure 6. On Resistance vs. V
0.50
VDD = 2.5V
= 100mA
I
DS
0.45
0.40
0.35
0.30
0.25
0.20
0.15
ON RESISTANCE (Ω)
0.10
0.05
0
SOURCE VOLTAGE (V)
Figure 7. On Resistance vs. V
0.6
V
= 1.8V
DD
= 100mA
I
DS
0.5
0.4
0.3
0.2
ON RESISTANCE (Ω)
0.1
0
SOURCE VOLTAGE (V)
Figure 8. On Resistance vs. V
+125°C
+85°C
+25°C
–40°C
SOURCE VOLTAGE (V)
(VS) for Different Temperatures,VDD = 3.3 V
D
3.300.9 1.20.3 0.61.5 1.8 2.1 2.4 2.7 3.0
+125°C
+85°C
+25°C
–40°C
2.500.51.01.52.0
(VS) for Different Temperatures, VDD = 2.5 V
D
+125°C
–40°C
+25°C
(VS) for Different Temperatures, VDD = 1.8 V
D
+85°C
1.800.40.60.20.81.01.21.41.6
05424-006
05424-007
05424-008
Rev. 0 | Page 8 of 16
ADG841/ADG842
www.BDTIC.com/ADI
200
VDD = 3.3V
150
100
50
LEAKAGE (nA)
0
–50
–100
TEMPERATURE (°C)
Figure 9. Leakage Current vs. Temperature, V
140
VDD = 2.5V
120
100
80
60
40
20
LEAKAGE (nA)
0
–20
–40
–60
TEMPERATURE (°C)
Figure 10. Leakage Current vs. Temperature, V
60
VDD = 1.8V
50
40
30
20
10
LEAKAGE (nA)
0
–10
–20
TEMPERATURE
Figure 11. Leakage Current vs. Temperature, V
I
, IS (ON)
D
I
(OFF)
S
DD
I
, IS (ON)
D
I
(OFF)
S
DD
I
, IS (ON)
D
I
(OFF)
D
DD
(OFF)
I
D
= 3.3 V
(OFF)
I
D
= 2.5 V
(OFF)
I
S
= 1.8 V
120–40–20020406080100
05424-009
120–40020–20406080100
05424-010
120–40–20020406080100
05424-011
450
TA = 25°C
400
350
300
250
200
150
CHARGE INJECTION (pC)
100
50
0
25
20
15
10
TIME (ns)
5
0
0
–1
–2
–3
–4
–5
–6
–7
ON RESPONSE (dB)
–8
–9
–10
VDD = 3.3V
= 1.8V
V
DD
VS (V)
Figure 12. Charge Injection vs. Source Voltage
ON
OFF
VDD = 1.8V
V
= 2.5V
DD
= 3.3V
V
DD
V
= 2.5V
DD
Figure 13. t
V
= 1.8V
DD
TEMPERATURE (°C)
Times vs. Temperature
ON/tOFF
T
T
TA = 25°C
V
= 3.3V/2.5V/1.8V
DD
FREQUENCY (Hz)
Figure 14. Bandwidth
V
= 2.5V
DD
V
DD
3.000.51.01.52.52.0
= 3.3V
05424-012
120–40020–20406080100
05424-013
100M1001k10k100k1M10M
05424-014
Rev. 0 | Page 9 of 16
ADG841/ADG842
www.BDTIC.com/ADI
0
TA = 25°C
V
= 3.3V/2.5V/1.8V
DD
–20
–20
0
= 25°C
T
A
V
= 3.3V / 2.5V
DD
VDD = 1.8V
–40
–60
–80
ON RESPONSE (dB)
–100
–120
0.030
0.025
0.020
0.015
THD + N (%)
0.010
0.005
FREQUENCY (Hz)
Figure 15. Off Isolation vs. Frequency
VDD = 1.8V; V p-p = 1V
V
= 2.5V; V p-p = 2V
DD
= 3.3V; V p-p = 2V
V
DD
–40
–60
–80
ON RESPONSE (dB)
–100
100M1001k10k100k1M10M
05424-015
–120
FREQUENCY (Hz)
100M1001k10k100k1M10M
05424-017
Figure 17. AC PSRR
0
FREQUENCY (kHz)
Figure 16. Total Harmonic Distortion + Noise
20024681012141618
05424-016
Rev. 0 | Page 10 of 16
ADG841/ADG842
www.BDTIC.com/ADI
TERMINOLOGY
I
DD
Positive supply current.
, CS (ON)
C
D
On switch capacitance. Measured with reference to ground.
(VS)
V
D
Analog voltage on Terminals D and S.
R
ON
Ohmic resistance between D and S.
R
FLAT (ON)
Flatness is the difference between the maximum and minimum
value of on resistance as measured over the specified analog
signal range.
I
(OFF)
S
Source leakage current with the switch off.
I
(OFF)
D
Drain leakage current with the switch off.
I
, IS (ON)
D
Channel leakage current with the switch on.
V
INL
Maximum input voltage for Logic 0.
V
INH
Minimum input voltage for Logic 1.
I
(I
)
INL
INH
Input current of the digital input.
C
(OFF)
S
Off switch source capacitance. Measured with reference to
ground.
C
(OFF)
D
Off switch drain capacitance. Measured with reference to
ground.
C
IN
Digital input capacitance.
t
ON
Delay time between the 50% and the 90% points of the digital
input and switch on condition.
t
OFF
Delay time between the 50% and the 90% points of the digital
input and switch off condition.
Charge Injection
easure of the glitch impulse transferred from the digital
A m
input to the analog output during on-off switching.
Off Isolation
easure of unwanted signal coupling through an off switch.
A m
−3 dB Bandwidth
The f
requency at which the output is attenuated by 3 dB.
On Response
T
he frequency response of the on switch.
Insertion Loss
s due to the on resistance of the switch.
The los
THD + N
The ra
tio of the harmonics amplitude plus noise of a signal to
the fundamental.
PSRR
ower Supply Rejection Ratio. This is a measure of the coupling
P
of unwanted ac signals on the power supply to the switch output
when the supply is not decoupled.
Rev. 0 | Page 11 of 16
ADG841/ADG842
V
V
V
www.BDTIC.com/ADI
TEST CIRCUITS
V
SD
V
S
Figure 18. On Resistance
S
I
DS
05424-017
V
V
DD
SS
0.1µF
V
DD
SD
IN
0.1µF
0.1µF
V
SS
GND
V
DD
IS(OFF)
V
S
SD
A
Figure 19. Off Leakage
R
C
L
L
300
Ω
35pF
Figure 21. Switching Times, t
(OFF)
I
D
A
V
D
05424-018
NC
SD
(ON)
I
D
A
V
D
05424-019
Figure 20. On Leakage
ADG841
V
IN
V
OUT
V
V
OUT
IN
ADG842
, t
ON
OFF
50%50%
50%50%
90%
t
ON
90%
t
OFF
05424-020
V
ADG842
V
V
OUT
IN
IN
ADG841
∆
V
OUT
V
DD
V
DS
S
IN
GND
C
1nF
V
OUT
L
Q
INJ
ON
= CL× ∆V
OUT
OFF
05424-021
Figure 22. Charge Injection
V
DD
0.1µF
NETWORK
V
DD
S
IN
GND
IN
OFF ISOLATION = 20 LOG
Ω
50
D
ADG841 – VIN= 0
ADG842 – V
ANALYZER
50Ω
V
S
V
OUT
R
L
50Ω
= 1
IN
V
OUT
V
S
05424-022
IN
Figure 23. Off Isolation
V
DD
0.1µF
V
DD
S
IN
D
GND
INSERTION LOSS = 20 LOG
Figure 24. Bandwidth
NETWORK
ANALYZER
50Ω
Ω
50
V
OUT
WITHOUT SWITCH
V
OUT
V
S
V
OUT
R
L
50Ω
WITH SWITCH
05424-023
Rev. 0 | Page 12 of 16
ADG841/ADG842
www.BDTIC.com/ADI
OUTLINE DIMENSIONS
2.20
2.00
1.80
2.40
1.35
1.25
1.15
PIN 1
1.30 BSC
1.00
0.90
0.70
0.10 MAX
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203-AB
Figure 25. 6-Lead Thin Shrink Small Outline Transistor [SC70]
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding1
ADG841YKSZ-500RL72 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SVA
ADG841YKSZ-REEL2 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SVA
ADG841YKSZ-REEL72 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SVA
ADG842YKSZ-500RL72 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SWA
ADG842YKSZ-REEL2 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SWA
ADG842YKSZ-REEL2 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SWA
1
Branding on this package is limited to three characters due to space constraints.