ANALOG DEVICES ADG841, ADG842 Service Manual

0.28 Ω CMOS 1.65 V to 3.6 V
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FEATURES

Ultralow on resistance
0.28 Ω typical
0.48 Ω max at 125°C
Excellent audio performance, ultralow distortion
0.025 Ω typical
0.052 Ω max R
1.65 V to 3.6 V single supply High current carrying capability
300 mA continuous current
500 mA peak current Automotive temperature range: –40°C to +125°C Rail-to-rail operation Typical power consumption (<0.01 µW)

APPLICATIONS

Handsets PDAs MP3 players Power routing Battery-powered systems Communication systems Modems PCMCIA cards

GENERAL DESCRIPTION

The ADG841 and ADG842 are low voltage CMOS devices containing a single-pole, single-throw (SPST) switch. The ADG841 is closed for a Logic 1 input and the ADG842 is open for a Logic 1 input. The devices offer ultralow on resistance of less than 0.48 Ω over the full temperature range. The ADG841/ ADG842 are fully specified for 3.3 V, 2.5 V, and 1.8 V supply operation.
flatness
ON
Single SPST Switches in SC70
ADG841/ADG842
FUNCTIONAL BLOCK DIAGRAM
ADG841
S
IN
D
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.

PRODUCT HIGHLIGHTS

1. <0.48 Ω over full temperature range of –40°C to +125°C.
2. Compatible with 1.8 V CMOS logic.
3. High current handling capability (300 mA continuous
current at 3.3 V).
4. Low THD + N (0.02% typ).
5. Tiny SC70 package.
Table 1. ADG841/ADG842 Truth Table
Logic (IN) ADG841 ADG842
0 Off On 1 On Off
S
IN
ADG842
D
05424-001
Each switch conducts equally well in both directions when on, and has an input signal range that extends to the supplies. The ADG841/ADG842 exhibit break-before-make switching action.
The ADG841/ADG842 are available in a 6-lead SC70 package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 © 2005 Analog Devices, Inc. All rights reserved.
ADG841/ADG842
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TABLE OF CONTENTS
Specifications—2.7 V to 3.6 V......................................................... 3
Typical Performance Characteristics..............................................8
Specifications—2.5 V ± 0.2 V.......................................................... 4
Specifications—1.65 V to 1.95 ........................................................ 5
Absolute Maximum Ratings............................................................ 6
ESD Caution.................................................................................. 6
Pin Configuration and Function Descriptions............................. 7
REVISION HISTORY
4/05—Revision 0: Initial Version
Terminology.....................................................................................11
Test Circuits......................................................................................12
Outline Dimensions........................................................................13
Ordering Guide ...........................................................................13
Rev. 0 | Page 2 of 16
ADG841/ADG842
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SPECIFICATIONS—2.7 V TO 3.6 V1
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
−40°C −40°C Parameter +25°C to +85°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V VDD = 2.7 V On Resistance (RON) 0.28 typ VDD = 2.7 V, VS = 0 V to VDD, IDS = −100 mA
0.37 0.43 0.48 Ω max Figure 18 On Resistance Flatness (R
0.034 0.044 0.052 max LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; Figure 19 Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 3.3 V; Figure 20
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current, I ±0.1 µA max Digital Input Capacitance, CIN 3.2 pF typ
DYNAMIC CHARACTERISTICS2
tON 10.5 ns typ RL = 50 Ω, CL = 35 pF 14 15.5 16.5 ns max VS = 1.5 V; Figure 21 t
6.5 ns typ RL = 50 Ω, CL = 35 pF
OFF
7.8 8 8.2 ns max VS = 1.5 V; Figure 21 Charge Injection 200 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 22 Off Isolation −54 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23 Total Harmonic Distortion (THD + N) 0.012 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p Insertion Loss −0.02 dB typ RL = 50 Ω, CL = 5 pF; Figure 24
−3 dB Bandwidth 21 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24 CS (OFF) 160 pF typ CD (OFF) 160 pF typ CD, CS (ON) 238 pF typ
POWER REQUIREMENTS VDD = 3.6 V
IDD 0.003 µA typ Digital inputs = 0 V or 3.6 V 1 4 µA max
1
Temperature range is −40°C to +125°C
2
Guaranteed by design; not subject to production test.
INH
0.8 V max
INL
or I
0.005 µA typ VIN = V
INL
INH
) 0.025 typ VDD = 2.7 V, VS = 0 V to VDD, IDS = −100 mA
FLAT (ON)
2 V min
or V
INH
INL
Rev. 0 | Page 3 of 16
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SPECIFICATIONS—2.5 V ± 0.2 V1
VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.
Table 3.
−40°C −40°C Parameter +25°C to +85°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 0.3 typ VDD = 2.3 V, VS = 0 V to VDD, IDS = −100 mA
0.35 0.4 0.45 Ω max Figure 18 On Resistance Flatness (R
0.04 0.05 0.05 max LEAKAGE CURRENTS VDD = 2.7 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 19 Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V; Figure 20
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current, I ±0.1 µA max Digital Input Capacitance, CIN 3.2 pF typ
DYNAMIC CHARACTERISTICS2
tON 13 ns typ RL = 50 Ω, CL = 35 pF
16.5 18 19 ns max VS = 1.5 V; Figure 21 t
7 ns typ RL = 50 Ω, CL = 35 pF
OFF
8.2 8.4 8.6 ns max VS = 1.5 V; Figure 21 Charge Injection 150 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 22 Off Isolation −54 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23 Total Harmonic Distortion (THD + N) 0.022 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p Insertion Loss −0.02 dB typ RL = 50 Ω, CL = 5 pF; Figure 24 –3 dB Bandwidth 21 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24 CS (OFF) 170 pF typ CD (OFF) 170 pF typ CD, CS (ON) 238 pF typ
POWER REQUIREMENTS VDD = 2.7 V
IDD 0.003 µA typ Digital inputs = 0 V or 2.7 V 1 4 µA max
1
Temperature range is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
INH
0.7 V max
INL
or I
INL
0.005 µA typ VIN = V
INH
) 0.025 typ VDD = 2.3 V, VS = 0 V to VDD, IDS = −100 mA
FLAT (ON)
1.7 V min
or V
INH
INL
Rev. 0 | Page 4 of 16
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SPECIFICATIONS—1.65 V TO 1.951
VDD = 1.65 V to1.95 V, GND = 0 V, unless otherwise noted.
Table 4.
−40°C −40°C Parameter +25°C to +85°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 0.37 typ VDD = 1.8 V, VS = 0 V to VDD, IDS = −100 mA
0.4 0.84 0.84 Ω max Figure 18
0.6 1.8 1.8 max VDD = 1.65 V, VS = 0 V to VDD, IDS = −100 mA On Resistance Flatness (R
LEAKAGE CURRENTS VDD = 1.95 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V; Figure 19 Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V; Figure 20
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current, I ±0.1 µA max Digital Input Capacitance, CIN 4 pF typ
DYNAMIC CHARACTERISTICS2
tON 19 ns typ RL = 50 Ω, CL = 35 pF 26 28 30 ns max VS = 1.5 V; Figure 21 t
8 ns typ RL = 50 Ω, CL = 35 pF
OFF
9.5 9.8 10 ns max VS = 1.5 V; Figure 21 Charge Injection 100 pC typ VS = 1 V, RS = 0 V, CL = 1 nF; Figure 22 Off Isolation −54 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23 Total Harmonic Distortion (THD + N) 0.14 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.2 V p-p Insertion Loss −0.02 dB typ RL = 50 Ω, CL = 5 pF; Figure 24 –3 dB Bandwidth 21 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24 CS (OFF) 178 pF typ CD (OFF) 178 pF typ CD, CS (ON) 238 pF typ
POWER REQUIREMENTS VDD = 1.95 V
IDD 0.003 µA typ Digital inputs = 0 V or 1.95 V 1 4 µA max
1
Temperature range −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
INH
0.35 VDD V max
INL
or I
0.005 µA typ VIN = V
INL
INH
) 0.17 typ VDD = 1.65 V, VS = 0 V to VDD, IDS = −100 mA
FLAT (ON)
0.65 VDD V min
or V
INH
INL
Rev. 0 | Page 5 of 16
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ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 5.
Parameter Rating
VDD to GND −0.3 V to +4.6 V Analog Inputs1 −0.3 V to VDD + 0.3 V Digital Inputs1
Peak Current, S or D
3.3 V Operation 500 mA
2.5 V Operation 460 mA
1.8 V Operation
Continuous Current, S or D
3.3 V Operation 300 mA
2.5 V Operation 275 mA
1.8 V Operation 250 mA
Operating Temperature Range
Automotive (Y Version) −40°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C SC70 Package
θJA Thermal Impedance 494.8°C/W Reflow Soldering (Pb-free)
Peak Temperature 260(+0/−5)°C
Time at Peak Temperature 10 sec to 40 sec
1
Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
−0.3 V to 4.6 V or 10 mA, whichever occurs first
420 mA (pulsed at 1 ms, 10% duty cycle max)
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. 0 | Page 6 of 16
ADG841/ADG842
G
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PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

D
1
ADG841/
ADG842
S
2
TOP VIEW
(Not to Scale)
ND
3
NC = NO CONNECT
Figure 2. 6-Lead SC70
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1 D Drain Terminal. Can be an input or output. 2 S Source Terminal. Can be an input or output. 3 GND Ground (0 V) Reference. 4 IN Logic Control Input. 5 NC No Connect. 6 VDD Most Positive Power Supply Potential.
V
6
DD
NC
5
IN
4
05424-002
Rev. 0 | Page 7 of 16
ADG841/ADG842
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TYPICAL PERFORMANCE CHARACTERISTICS

0.350 T
= 25°C
A
= 100mA
I
DS
0.325
V
= 3V
0.300
0.275
0.250
ON RESISTANCE (Ω)
0.225
0.200
Figure 3. On Resistance vs. V
0.350 = 25°C
T
A
= 100mA
I
DS
0.325
0.300
0.275
0.250
ON RESISTANCE (Ω)
0.225
0.200
Figure 4. On Resistance vs. V
0.50 TA = 25°C
= 100mA
I
DS
0.45
0.40
0.35
0.30
V
= 1.8V
DD
0.25
0.20
0.15
ON RESISTANCE (Ω)
0.10
0.05
0
Figure 5. On Resistance vs. V
VDD = 3.3V
SOURCE VOLTAGE (V)
V
= 2.5V
DD
SOURCE VOLTAGE (V)
SOURCE VOLTAGE (V)
DD
V
DD
(VS) VDD = 3.3 V ± 0.3 V
D
VDD = 2.3V
VDD = 2.7V
(VS) VDD = 2.5 V ± 0.2 V
D
VDD = 1.65V
VDD = 1.95V
(VS) VDD = 1.8 V ± 0.15 V
D
= 3.6V
3.60 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
05424-003
2.50 0.5 1.0 1.5 2.0
05424-004
2.00 0.4 0.8 1.2 1.6
05424-005
0.50 V
= 3.3V
DD
= 100mA
I
DS
0.45
0.40
0.35
0.30
0.25
0.20
0.15
ON RESISTANCE (Ω)
0.10
0.05
0
Figure 6. On Resistance vs. V
0.50 VDD = 2.5V
= 100mA
I
DS
0.45
0.40
0.35
0.30
0.25
0.20
0.15
ON RESISTANCE (Ω)
0.10
0.05
0
SOURCE VOLTAGE (V)
Figure 7. On Resistance vs. V
0.6 V
= 1.8V
DD
= 100mA
I
DS
0.5
0.4
0.3
0.2
ON RESISTANCE (Ω)
0.1
0
SOURCE VOLTAGE (V)
Figure 8. On Resistance vs. V
+125°C
+85°C
+25°C
–40°C
SOURCE VOLTAGE (V)
(VS) for Different Temperatures,VDD = 3.3 V
D
3.30 0.9 1.20.3 0.6 1.5 1.8 2.1 2.4 2.7 3.0
+125°C
+85°C
+25°C
–40°C
2.50 0.5 1.0 1.5 2.0
(VS) for Different Temperatures, VDD = 2.5 V
D
+125°C
–40°C
+25°C
(VS) for Different Temperatures, VDD = 1.8 V
D
+85°C
1.80 0.4 0.60.2 0.8 1.0 1.2 1.4 1.6
05424-006
05424-007
05424-008
Rev. 0 | Page 8 of 16
ADG841/ADG842
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200
VDD = 3.3V
150
100
50
LEAKAGE (nA)
0
–50
–100
TEMPERATURE (°C)
Figure 9. Leakage Current vs. Temperature, V
140
VDD = 2.5V
120
100
80
60
40
20
LEAKAGE (nA)
0
–20
–40
–60
TEMPERATURE (°C)
Figure 10. Leakage Current vs. Temperature, V
60
VDD = 1.8V
50
40
30
20
10
LEAKAGE (nA)
0
–10
–20
TEMPERATURE
Figure 11. Leakage Current vs. Temperature, V
I
, IS (ON)
D
I
(OFF)
S
DD
I
, IS (ON)
D
I
(OFF)
S
DD
I
, IS (ON)
D
I
(OFF)
D
DD
(OFF)
I
D
= 3.3 V
(OFF)
I
D
= 2.5 V
(OFF)
I
S
= 1.8 V
120–40 –20 0 20 40 60 80 100
05424-009
120–40 0 2020 406080100
05424-010
120–40 –20 0 20 40 60 80 100
05424-011
450
TA = 25°C
400
350
300
250
200
150
CHARGE INJECTION (pC)
100
50
0
25
20
15
10
TIME (ns)
5
0
0
–1
–2
–3
–4
–5
–6
–7
ON RESPONSE (dB)
–8
–9
–10
VDD = 3.3V
= 1.8V
V
DD
VS (V)
Figure 12. Charge Injection vs. Source Voltage
ON
OFF
VDD = 1.8V
V
= 2.5V
DD
= 3.3V
V
DD
V
= 2.5V
DD
Figure 13. t
V
= 1.8V
DD
TEMPERATURE (°C)
Times vs. Temperature
ON/tOFF
T
T
TA = 25°C V
= 3.3V/2.5V/1.8V
DD
FREQUENCY (Hz)
Figure 14. Bandwidth
V
= 2.5V
DD
V
DD
3.00 0.5 1.0 1.5 2.52.0
= 3.3V
05424-012
120–40 0 20–20 40 60 80 100
05424-013
100M100 1k 10k 100k 1M 10M
05424-014
Rev. 0 | Page 9 of 16
ADG841/ADG842
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0
TA = 25°C V
= 3.3V/2.5V/1.8V
DD
–20
–20
0
= 25°C
T
A
V
= 3.3V / 2.5V
DD
VDD = 1.8V
–40
–60
–80
ON RESPONSE (dB)
–100
–120
0.030
0.025
0.020
0.015
THD + N (%)
0.010
0.005
FREQUENCY (Hz)
Figure 15. Off Isolation vs. Frequency
VDD = 1.8V; V p-p = 1V
V
= 2.5V; V p-p = 2V
DD
= 3.3V; V p-p = 2V
V
DD
–40
–60
–80
ON RESPONSE (dB)
–100
100M100 1k 10k 100k 1M 10M
05424-015
–120
FREQUENCY (Hz)
100M100 1k 10k 100k 1M 10M
05424-017
Figure 17. AC PSRR
0
FREQUENCY (kHz)
Figure 16. Total Harmonic Distortion + Noise
200 2 4 6 8 10 12 14 16 18
05424-016
Rev. 0 | Page 10 of 16
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TERMINOLOGY

I
DD
Positive supply current.
, CS (ON)
C
D
On switch capacitance. Measured with reference to ground.
(VS)
V
D
Analog voltage on Terminals D and S.
R
ON
Ohmic resistance between D and S.
R
FLAT (ON)
Flatness is the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range.
I
(OFF)
S
Source leakage current with the switch off.
I
(OFF)
D
Drain leakage current with the switch off.
I
, IS (ON)
D
Channel leakage current with the switch on.
V
INL
Maximum input voltage for Logic 0.
V
INH
Minimum input voltage for Logic 1.
I
(I
)
INL
INH
Input current of the digital input.
C
(OFF)
S
Off switch source capacitance. Measured with reference to ground.
C
(OFF)
D
Off switch drain capacitance. Measured with reference to ground.
C
IN
Digital input capacitance.
t
ON
Delay time between the 50% and the 90% points of the digital input and switch on condition.
t
OFF
Delay time between the 50% and the 90% points of the digital input and switch off condition.
Charge Injection
easure of the glitch impulse transferred from the digital
A m input to the analog output during on-off switching.
Off Isolation
easure of unwanted signal coupling through an off switch.
A m
−3 dB Bandwidth
The f
requency at which the output is attenuated by 3 dB.
On Response
T
he frequency response of the on switch.
Insertion Loss
s due to the on resistance of the switch.
The los
THD + N
The ra
tio of the harmonics amplitude plus noise of a signal to
the fundamental.
PSRR
ower Supply Rejection Ratio. This is a measure of the coupling
P of unwanted ac signals on the power supply to the switch output when the supply is not decoupled.
Rev. 0 | Page 11 of 16
ADG841/ADG842
V
V
V
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TEST CIRCUITS

V
SD
V
S
Figure 18. On Resistance
S
I
DS
05424-017
V
V
DD
SS
0.1µF
V
DD
SD
IN
0.1µF
0.1µF
V
SS
GND
V
DD
IS(OFF)
V
S
SD
A
Figure 19. Off Leakage
R
C
L
L
300
35pF
Figure 21. Switching Times, t
(OFF)
I
D
A
V
D
05424-018
NC
SD
(ON)
I
D
A
V
D
05424-019
Figure 20. On Leakage
ADG841
V
IN
V
OUT
V
V
OUT
IN
ADG842
, t
ON
OFF
50% 50%
50% 50%
90%
t
ON
90%
t
OFF
05424-020
V
ADG842
V
V
OUT
IN
IN
ADG841
V
OUT
V
DD
V
DS
S
IN
GND
C 1nF
V
OUT
L
Q
INJ
ON
= CL× V
OUT
OFF
05424-021
Figure 22. Charge Injection
V
DD
0.1µF
NETWORK
V
DD
S
IN
GND
IN
OFF ISOLATION = 20 LOG
50
D
ADG841 – VIN= 0 ADG842 – V
ANALYZER
50
V
S
V
OUT
R
L
50
= 1
IN
V
OUT
V
S
05424-022
IN
Figure 23. Off Isolation
V
DD
0.1µF
V
DD
S
IN
D
GND
INSERTION LOSS = 20 LOG
Figure 24. Bandwidth
NETWORK
ANALYZER
50
50
V
OUT
WITHOUT SWITCH
V
OUT
V
S
V
OUT
R
L
50
WITH SWITCH
05424-023
Rev. 0 | Page 12 of 16
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OUTLINE DIMENSIONS

2.20
2.00
1.80
2.40
1.35
1.25
1.15 PIN 1
1.30 BSC
1.00
0.90
0.70
0.10 MAX
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203-AB
Figure 25. 6-Lead Thin Shrink Small Outline Transistor [SC70]

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding1
ADG841YKSZ-500RL72 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SVA ADG841YKSZ-REEL2 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SVA ADG841YKSZ-REEL72 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SVA ADG842YKSZ-500RL72 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SWA ADG842YKSZ-REEL2 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SWA ADG842YKSZ-REEL2 –40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor (SC70) KS-6 SWA
1
Branding on this package is limited to three characters due to space constraints.
2
Z = Pb-free part.
4 5 6
2.10
3 2 1
1.80
0.65 BSC
0.40
0.10
0.30
0.15
1.10
0.80
SEATING PLANE
(KS-6)
Dimensions shown in millimeters
0.22
0.08
0.30
0.10
Rev. 0 | Page 13 of 16
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NOTES
Rev. 0 | Page 14 of 16
ADG841/ADG842
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NOTES
Rev. 0 | Page 15 of 16
ADG841/ADG842
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NOTES
© 2005 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.
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