Analog Devices ADG839 Datasheet

0.35 Ω CMOS 1.65 V to 3.6 V
S
S

FEATURES

1.65 V to 3.6 V operation Ultralow on resistance:
0.35 Ω typical
0.5 Ω max at 2.7 V supply
Excellent audio performance, ultralow distortion:
0.055 Ω typical
0.09 Ω max R
High current carrying capability:
300 mA continuous
500 mA peak current at 3.3 V Automotive temperature range: –40°C to +125°C Rail-to-rail switching operation Typical power consumption (<0.1 µW)

APPLICATIONS

Cellular phones PDAs MP3 players Power routing Battery-powered systems PCMCIA cards Modems Audio and video signal routing Communication systems
flatness
ON
Single SPDT Switch/2:1 MUX
ADG839

FUNCTIONAL BLOCK DIAGRAM

ADG839
2
1
IN
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.

PRODUCT HIGHLIGHTS

1. 0.6 Ω over full temperature range of –40°C to +125°C.
2. Compatible with 1.8 V CMOS logic.
3. High current handling capability (300 mA continuous
current at 3.3 V).
4. Low THD + N (0.01% typ).
5. Tiny SC70 package.
D
04449-001

GENERAL DESCRIPTION

The ADG839 is a low voltage CMOS device containing a single­pole, double-throw (SPDT) switch. This device offers ultralow on resistance of less than 0.6 Ω over the full temperature range. The ADG839 is fully specified for 1.8 V, 2.5 V, and 3.3 V supply operation.
Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. The ADG839 exhibits break-before-make switching action.
The ADG839 is available in a 6-lead SC70 package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
Table 1. ADG839 Truth Table
Logic Switch 2 (S2) Switch 1 (S1)
0 Off On 1 On Off
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ADG839
TABLE OF CONTENTS
Specifications—2.7 V to 3.6 V ........................................................ 3
Typical Perfor m a n c e C haracter i s t ic s ..............................................8
Specifications—2.3 V to 2.7 V ........................................................ 4
Specifications—1.65 V to 1.95 V .................................................... 5
Absolute Maximum Ratings............................................................ 6
ESD Caution.................................................................................. 6
Pin Configuration and Function Descriptions............................. 7
REVISION HISTORY
10/04—Initial Version: Revision 0
Te r mi n ol o g y .................................................................................... 11
Test C ir c uit s ..................................................................................... 12
Outline Dimensions ....................................................................... 14
Ordering Guide .......................................................................... 14
Rev. 0 | Page 2 of 16
ADG839
SPECIFICATIONS1—2.7 V TO 3.6 V
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
−40°C to −40°C to Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDDV VDD = 2.7 V On Resistance (RON) 0.35 typ VDD = 2.7 V, VS = 0 V to VDD, IS = 100 mA;
0.5 0.56 0.61 Ω max Figure 19 On Resistance Match between 0.04 Ω typ VDD = 2.7 V, VS = 0.9 V, IS = 100 mA
Channels (∆RON) 0.075 0.085 0.095 Ω max
On Resistance Flatness 0.055 Ω typ VDD = 2.7 V, VS = 0 V to VDD, (R LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; Figure 20
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 3.3 V; Figure 21 DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
I ±0.1 µA max CIN, Digital Input Capacitance 3.2 pF typ
DYNAMIC CHARACTERISTICS
t
ON
16 18 19 ns max VS = 1.5 V/0 V; Figure 22 t
OFF
8.5 9 9.5 ns max VS = 1.5 V; Figure 22 Break-Before-Make Time Delay 5 ns typ RL = 50 Ω, CL = 35 pF; Figure 23 (t Charge Injection 70 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 24 Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25 Channel-to-Channel Crosstalk −57 dB typ
Total Harmonic Distortion (THD + N)
Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27
−3 dB Bandwidth 25 MHz typ RL = 50 Ω, CL = 5 pF; Figure 27 CS (OFF) 74 pF typ CD, CS (ON) 120 pF typ VDD = 3.6 V
POWER REQUIREMENTS Digital inputs = 0 V or 3.6 V
I
DD
1 4 µA max
1
Temperature range for the Y version is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
) 0.07 0.082 0.09 max IS = 100 mA
FLAT (ON)
INH
INL
or I
INL
INH
2 V min
0.8 V max
0.005 µA typ VIN = V
2
INL
or V
INH
12 ns typ RL = 50 Ω, CL = 35 pF
6.5 ns typ RL = 50 Ω, CL = 35 pF
) 1 ns min VS1 = VS2 = 1.5 V;
BBM
S1 −S2;
= 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26
R
L
0.013 % R
= 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p
L
0.003 µA typ
Rev. 0 | Page 3 of 16
ADG839
SPECIFICATIONS1—2.3 V TO 2.7 V
VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.
Table 3.
−40°C to −40°C to Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 0.35 typ VDD = 2.3 V, VS = 0 V to VDD,
0.5 0.55 0.6 max IS = 100 mA; Figure 19 On Resistance Match between 0.04 Ω typ VDD = 2.3 V, VS = 0.95 V,
Channels (∆RON) 0.075 0.085 0.095 max IS = 100 mA
On Resistance Flatness (R
0.13 0.13 max IS = 100 mA LEAKAGE CURRENTS VDD = 2.7 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 20 Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V; Figure 21
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INH
INL
Input Current
I
or I
INL
INH
±0.1 µA max CIN, Digital Input Capacitance 3.2 pF typ
DYNAMIC CHARACTERISTICS
t
ON
18 20 21 ns max VS = 1.5 V/0 V; Figure 22 t
7.5 ns typ RL = 50 Ω, CL = 35 pF
OFF
9.2 9.5 9.8 ns max VS = 1.5 V; Figure 22 Break-before-Make Time Delay (t 1 ns min VS1 = VS2 = 1.5 V; Charge Injection 60 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 24 Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25 Channel-to-Channel Crosstalk −57 dB typ
Total Harmonic Distortion (THD + N) 0.021 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27 –3 dB Bandwidth 25 MHz typ RL = 50 Ω, CL = 5 pF; Figure 27 CS (OFF) 78 pF typ CD, CS (ON) 127 pF typ VDD = 2.7 V
POWER REQUIREMENTS Digital inputs = 0 V or 2.7 V
I
DD
1 4 µA max
1
Temperature range for the Y version is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
) 0.045 typ VDD = 2.3 V, VS = 0 V to VDD,
FLAT (ON)
1.7 V min
0.7 V max
0.005 µA typ VIN = V
2
INL
or V
14.5 ns typ RL = 50 Ω, CL = 35 pF
) 7 ns typ RL = 50 Ω, CL = 35 pF; Figure 23
BBM
S1−S2;
= 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26
R
L
0.003 µA typ
INH
Rev. 0 | Page 4 of 16
ADG839
SPECIFICATIONS1—1.65 V TO 1.95 V
VDD = 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.
Table 4.
−40°C to −40°C to Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V On Resistance (RON) 0.5 typ VDD = 1.8 V, VS = 0 V to VDD, IS = 100 mA;
0.8 1.2 1.2 Ω max Figure 19
1.3 2.5 2.5 max VDD = 1.65 V, VS = 0 V to VDD, IS = 100 mA On Resistance Match between 0.04 Ω typ VDD = 1.65 V, VS = TBD, IS = 100 mA
Channels (∆RON) 0.075 0.08 0.08 max IS = 100 mA On Resistance Flatness (R
) 0.3 typ VDD = 1.65 V, VS = 0 V to VDD, IS = 100 mA
FLAT (ON)
LEAKAGE CURRENTS VDD = 1.95 V
Source Off Leakage IS (OFF) ±0.2 nA typ
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V; Figure 21
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INH
INL
0.65 V
0.35 V
DD
DD
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V ±0.1 µA max CIN, Digital Input Capacitance 3.2 pF typ
DYNAMIC CHARACTERISTICS
t
ON
2
20 ns typ RL = 50 Ω, CL = 35 pF 28 30 31 ns max VS = 1.5 Ω/0 V; Figure 22 t
8 ns typ RL = 50 Ω, CL = 35 pF
OFF
10.1 10.5 10.7 ns max VS = 1.5 V; Figure 22 Break-before-Make Time Delay (t
) 12 ns typ RL = 50 Ω, CL = 35 pF
BBM
1 ns min VS1 = VS2 = 1 V; Figure 23 Charge Injection 50 pC typ VS = 1 V, RS = 0 V, CL = 1 nF; Figure 24 Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25 Channel-to-Channel Crosstalk −57 dB typ S1 −S2; R Total Harmonic Distortion (THD + N) 0.033 % RL = 32 Ω, f = 20 Hz to 20 kHz,
Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27 –3 dB Bandwidth 25 MHz typ RL = 50 Ω, CL = 5 pF; Figure 27 CS (OFF) 83 pF typ VDD = 1.95 V CD, CS (ON) 132 pF typ Digital inputs = 0 V or 1.95 V
POWER REQUIREMENTS Digital inputs = 0 V or 1.95 V
I
DD
0.003 µA typ
1 4 µA max
1
Temperature range for the Y version is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
V
DD
V min V max
= 0.6 V/1.65 V, VD = 1.65 V/0.6 V;
V
S
Figure 20
or V
INL
INH
= 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26
L
V
= 1 V p-p
S
Rev. 0 | Page 5 of 16
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