500 mA peak current at 3.3 V
Automotive temperature range: –40°C to +125°C
Rail-to-rail switching operation
Typical power consumption (<0.1 µW)
APPLICATIONS
Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems
flatness
ON
Single SPDT Switch/2:1 MUX
ADG839
FUNCTIONAL BLOCK DIAGRAM
ADG839
2
1
IN
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.
PRODUCT HIGHLIGHTS
1. 0.6 Ω over full temperature range of –40°C to +125°C.
2. Compatible with 1.8 V CMOS logic.
3. High current handling capability (300 mA continuous
current at 3.3 V).
4. Low THD + N (0.01% typ).
5. Tiny SC70 package.
D
04449-001
GENERAL DESCRIPTION
The ADG839 is a low voltage CMOS device containing a singlepole, double-throw (SPDT) switch. This device offers ultralow
on resistance of less than 0.6 Ω over the full temperature range.
The ADG839 is fully specified for 1.8 V, 2.5 V, and 3.3 V supply
operation.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG839 exhibits break-before-make switching action.
The ADG839 is available in a 6-lead SC70 package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
−40°C to −40°C to
Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.35 Ω typ VDD = 2.3 V, VS = 0 V to VDD,
0.5 0.55 0.6 Ω max IS = 100 mA; Figure 19
On Resistance Match between 0.04 Ω typ VDD = 2.3 V, VS = 0.95 V,
Channels (∆RON) 0.075 0.085 0.095 Ω max IS = 100 mA
On Resistance Flatness (R
0.13 0.13 Ω max IS = 100 mA
LEAKAGE CURRENTS VDD = 2.7 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 20
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V; Figure 21
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
Input Current
I
or I
INL
INH
±0.1 µA max
CIN, Digital Input Capacitance 3.2 pF typ
DYNAMIC CHARACTERISTICS
t
ON
18 20 21 ns max VS = 1.5 V/0 V; Figure 22
t
7.5 ns typ RL = 50 Ω, CL = 35 pF
OFF
9.2 9.5 9.8 ns max VS = 1.5 V; Figure 22
Break-before-Make Time Delay (t
1 ns min VS1 = VS2 = 1.5 V;
Charge Injection 60 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −57 dB typ
Total Harmonic Distortion (THD + N) 0.021 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27
–3 dB Bandwidth 25 MHz typRL = 50 Ω, CL = 5 pF; Figure 27
CS (OFF) 78 pF typ
CD, CS (ON) 127 pF typ VDD = 2.7 V
POWER REQUIREMENTS Digital inputs = 0 V or 2.7 V
I
DD
1 4 µA max
1
Temperature range for the Y version is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
−40°C to −40°C to
Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
On Resistance (RON) 0.5 Ω typ VDD = 1.8 V, VS = 0 V to VDD, IS = 100 mA;
0.8 1.2 1.2 Ω max Figure 19
1.3 2.5 2.5 Ω max VDD = 1.65 V, VS = 0 V to VDD, IS = 100 mA
On Resistance Match between 0.04 Ω typ VDD = 1.65 V, VS = TBD, IS = 100 mA
Channels (∆RON) 0.075 0.08 0.08 Ω max IS = 100 mA
On Resistance Flatness (R
) 0.3 Ω typ VDD = 1.65 V, VS = 0 V to VDD, IS = 100 mA
FLAT (ON)
LEAKAGE CURRENTS VDD = 1.95 V
Source Off Leakage IS (OFF) ±0.2 nA typ
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V; Figure 21
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
0.65 V
0.35 V
DD
DD
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
±0.1 µA max
CIN, Digital Input Capacitance 3.2 pF typ
DYNAMIC CHARACTERISTICS
t
ON
2
20 ns typ RL = 50 Ω, CL = 35 pF
28 30 31 ns max VS = 1.5 Ω/0 V; Figure 22
t
8 ns typ RL = 50 Ω, CL = 35 pF
OFF
10.1 10.5 10.7 ns max VS = 1.5 V; Figure 22
Break-before-Make Time Delay (t
) 12 ns typ RL = 50 Ω, CL = 35 pF
BBM
1 ns min VS1 = VS2 = 1 V; Figure 23
Charge Injection 50 pC typ VS = 1 V, RS = 0 V, CL = 1 nF; Figure 24
Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −57 dB typ S1 −S2;
R
Total Harmonic Distortion (THD + N) 0.033 % RL = 32 Ω, f = 20 Hz to 20 kHz,
Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27
–3 dB Bandwidth 25 MHz typ RL = 50 Ω, CL = 5 pF; Figure 27
CS (OFF) 83 pF typ VDD = 1.95 V
CD, CS (ON) 132 pF typ Digital inputs = 0 V or 1.95 V
POWER REQUIREMENTS Digital inputs = 0 V or 1.95 V
I
DD
0.003 µA typ
1 4 µA max
1
Temperature range for the Y version is −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
V
DD
V min
V max
= 0.6 V/1.65 V, VD = 1.65 V/0.6 V;
V
S
Figure 20
or V
INL
INH
= 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26
L
V
= 1 V p-p
S
Rev. 0 | Page 5 of 16
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