Analog Devices ADG836L a Datasheet

0.5 Ω CMOS 1.65 V to 3.6 V

FEATURES

0.5 Ω typical on resistance

0.8 Ω maximum on resistance at 125°C

1.65 V to 3.6 V operation
Automotive temperature range: –40°C to +125°C
Guaranteed leakage specifications up to 125°C
High current carrying capability: 300 mA continuous
Rail-to-rail switching operation
Fast switching times <20 ns
Typical power consumption: <0.1 µW

APPLICATIONS

Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems

GENERAL DESCRIPTION

The ADG836L is a low voltage CMOS device containing two
independently selectable single-pole, double-throw (SPDT)
switches. This device offers ultralow on resistance of less than

0.8 Ω over the full temperature range. The ADG836L is fully
specified for 3.3 V, 2.5 V, and 1.8 V supply operation.

Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG836L exhibits break-before-make switching action.

The ADG836L is available in a 10-lead package.

Dual SPDT/2:1 MUX

ADG836L

FUNCTIONAL BLOCK DIAGRAM

ADG836L

S1A

S1B

IN1

IN2

S2A

S2B

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Figure 1.

PRODUCT HIGHLIGHTS

1. Less than 0.8 Ω over full temperature range of

−40°C to +125°C.

2. Single 1.65 V to 3.6 V operation.

3. Compatible with 1.8 V CMOS logic.

4. High current handling capability (300 mA continuous

current at 3.3 V).

5. Low THD + N (0.02% typ).

6. Small 10-lead MSOP package.

D1

D2

04753-0-001

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
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Tel: [phone]
Fax: [phone] © 2004 Analog Devices, Inc. All rights reserved.

www.analog.com

ADG836L

TABLE OF CONTENTS

Specifications..................................................................................... 3

Absolute Maximum Ratings............................................................ 6

Truth Table ........................................................................................ 6

Pin Terminology ............................................................................... 7

Typical Performance Characteristics ............................................. 8

Test Circuits..................................................................................... 11

Outline Dimensions....................................................................... 13

Ordering Guide........................................................................... 14

REVISION HISTORY

5/04—Data Sheet Changed from Rev. 0 to Rev. A

Updated Ordering Guide............................................................... 14

4/04—Revision 0: Initial Version

Rev. A | Page 2 of 16

ADG836L

SPECIFICATIONS

Table 1. VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.

Parameter +25°C −40°C – +85°C −40°C – +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (RON) 0.5 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA

0.65 0.75 0.8 Ω max (Figure 18)
On Resistance Match between

Channels (∆R
On Resistance Flatness (R

)

ON

FLAT (ON)

0.04 0.075 0.08

) 0.1 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA

0.15 0.16 Ω max
LEAKAGE CURRENTS VDD = 3.6 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V
±1 ±10 ±100 nA max (Figure 19)

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 3.3 V (Figure 20)
±1 ±15 ±120 nA max
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

or I

INL

INH

INL

INH

2 V min

0.8 V max

0.005 µA typ VIN = V

±0.1 µA max

CIN, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS

t

ON

2

21 ns typ RL = 50 Ω, CL = 35 pF
26 28 29 ns max VS = 1.5 V/0 V (Figure 21)
t

4 ns typ RL = 50 Ω, CL = 35 pF

OFF

7 8 9 ns max VS = 1.5 V (Figure 21)
Break-before-Make Time Delay

)

(t

BBM

17 ns typ R

5 ns min VS1 = VS2 = 1.5 V (Figure 22)
Charge Injection 40 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF (Figure 23)
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz (Figure 24)
Channel-to-Channel Crosstalk −90 dB typ S1A−S2A/S1B−S2B (Figure 27)

−67 dB typ S1A−S1B/S2A−S2B (Figure 26)

Total Harmonic Distortion

0.02 % R

(THD + N)
Insertion Loss −0.05 dB typ RL = 50 Ω, CL = 5 pF (Figure 25)

−3 dB Bandwidth 57 MHz typ RL = 50 Ω, CL = 5 pF (Figure 25)
CS (OFF) 25 pF typ
CD, CS (ON) 75 pF typ

POWER REQUIREMENTS VDD = 3.6 V

I

DD

0.003 µA typ Digital inputs = 0 V or 3.6 V

1 4 µA max

1

Temperature range for Y version is −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

1

DD

V VDD = 2.7 V

= 2.7 V, VS = 0.65 V, IS = 10 mA

Ω typ

V

DD

Ω max

or V

INL

INH

= 50 Ω, CL = 35 pF

L

R

= 50 Ω, CL = 5 pF, f = 100 kHz

L

R

= 50 Ω, CL = 5 pF, f = 100 kHz

L

= 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p

L

Rev. A | Page 3 of 16

ADG836L

Table 2. VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.1

Parameter +25°C −40°C – +85°C −40°C – +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V

DD

On Resistance (RON) 0.65 Ω typ VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA

0.72 0.8 0.88 Ω max (Figure 18)
On Resistance Match between 0.04 Ω typ VDD = 2.3 V, VS = 0.7 V, IS = 10 mA

Channels (∆RON) 0.08 0.085 Ω max

On Resistance Flatness (R

) 0.16 Ω typ VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA

FLAT (ON)

0.23 0.24 Ω max
LEAKAGE CURRENTS VDD = 2.7 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V
±0.4 ±4 ±45 nA max (Figure 19)

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V (Figure 20)
±0.6 ±12 ±90 nA max
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

INH

INL

1.7 V min

0.7 V max

Input Current

I

or I

INL

INH

0.005 µA typ VIN = V
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

2

23 ns typ RL = 50 Ω, CL = 35 pF
29 30 31 ns max VS = 1.5 V/0 V (Figure 21)
t

5 ns typ RL = 50 Ω, CL = 35 pF

OFF

7 8 9 ns max VS = 1.5 V (Figure 21)
Break-before-Make Time Delay

(t

)

BBM

17 ns typ RL = 50 Ω, CL = 35 pF

5 ns min VS1 = VS2 = 1.5 V (Figure 22)
Charge Injection 30 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF (Figure 23)
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz (Figure 24)
Channel-to-Channel Crosstalk −90 dB typ S1A−S2A/S1B−S2B;

−67 dB typ S1A−S1B/S2A−S2B;

Total Harmonic Distortion

0.022 % R

(THD + N)
Insertion Loss −0.06 dB typ RL = 50 Ω, CL = 5 pF (Figure 25)
–3 dB Bandwidth 57 MHz typ RL = 50 Ω, CL = 5 pF (Figure 25)
CS (OFF) 25 pF typ
CD, CS (ON) 75 pF typ

POWER REQUIREMENTS VDD = 2.7 V

I

DD

0.003 µA typ Digital inputs = 0 V or 2.7 V

1 4 µA max

1

Temperature range for Y version is −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

V

or V

INL

R

= 50 V, CL = 5 pF, f = 100 kHz;Figure 27

L

R

= 50 Ω, CL = 5 pF, f = 100 kHz Figure 25

L

= 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p

L

INH

Rev. A | Page 4 of 16

ADG836L

Table 3. VDD = 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.1

Parameter +25°C −40°C – +85°C −40°C – +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V

DD

On Resistance (RON) 1 Ω typ VDD = 1.8 V, VS = 0 V to VDD, IS = 10 mA

1.4 2.2 2.2 Ω max (Figure 18)
2 4 4 Ω typ VDD = 1.65 V, VS = 0 V to VDD, IS = 10 mA
On Resistance Match between

Channels (∆R

)

ON

0.1 Ω typ V

LEAKAGE CURRENTS

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V
±0.4 ±4 ±25 nA max (Figure 19)

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V Figure 20
±0.6 ±10 ±75 nA max
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

INH

INL

0.65 V

0.35 V

DD

DD

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

2

28 ns typ RL = 50 Ω, CL = 35 pF
37 38 39 ns max VS = 1.5 Ω/0 V (Figure 21)
t

7 ns typ RL = 50 Ω, CL = 35 pF

OFF

9 10 11 ns max VS = 1.5 V (Figure 21)
Break-before-Make Time Delay

)

(t

BBM

21 ns typ R

5 ns min VS1 = VS2 = 1 V (Figure 22)
Charge Injection 20 pC typ VS = 1 V, RS = 0 V, CL = 1 nF (Figure 23)
Off Isolation −67 dB typ

Channel-to-Channel Crosstalk −90 dB typ S1A−S2A/S1B−S2B;

−67 dB typ S1A−S1B/S2A−S2B;

Total Harmonic Distortion

0.14 % R

(THD + N)

Insertion Loss −0.08 dB typ RL = 50 Ω, CL = 5 pF (Figure 25)
–3 dB Bandwidth 57 MHz typ RL = 50 Ω, CL = 5 pF (Figure 25)
CS (OFF) 25 pF typ
CD, CS (ON) 75 pF typ

POWER REQUIREMENTS VDD = 1.95 V

I

DD

0.003 µA typ Digital inputs = 0 V or 1.95 V

1.0 4 µA max

1

Temperature range for Y version is −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

V

= 1.65 V, VS = 0.7 V, IS = 10 mA

DD

V

= 1.95 V

DD

V min
V max

or V

INL

= 50 Ω, CL = 35 pF

L

= 50 Ω, CL = 5 pF, f = 100 kHz,

R

L

(Figure 24)

= 50 Ω, CL = 5 pF, f = 100 kHz

R

L

(Figure 27)

= 50 Ω, CL = 5 pF, f = 100 kHz

R

L

(Figure 25)

= 32 Ω, f = 20 Hz to 20 kHz,

L

V

= 1.2 V p-p

S

INH

Rev. A | Page 5 of 16