Analog Devices ADG821 2 3 Datasheet

<1 Ω CMOS 1.8 V to 5.5 V,

FEATURES

0.8  Max On Resistance @125C

0.28  Max On Resistance Flatness @125C

1.8 V to 5.5 V Single Supply 200 mA Current Carrying Capability Automotive Temperature Range: –40C to +125C Rail-to-Rail Operation 8-Lead MSOP Package 33 ns Switching Times Typical Power Consumption (<0.01 W) TTL/CMOS Compatible Inputs Pin Compatible with ADG721/722/723

APPLICATIONS Power Routing Battery-Powered Systems Communication Systems Data Acquisition Systems Audio and Video Signal Routing Cellular Phones Modems PCMCIA Cards Hard Drives Relay Replacement

Dual SPST Switches

ADG821/ADG822/ADG823

FUNCTIONAL BLOCK DIAGRAM

ADG822

IN1

IN2

ADG821

IN2

SWITCHES SHOWN FOR A LOGIC “0”

IN1

ADG823

INPUT

IN2

IN1

GENERAL DESCRIPTION

The ADG821, ADG822, and ADG823 are monolithic CMOS SPST (single pole, single throw) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents.

The ADG821, ADG822, and ADG823 are designed to operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery-powered instruments.

Each switch of the ADG821/ADG822/ADG823 conducts equally well in both directions when on. The ADG821, ADG822, and ADG823 contain two independent SPST switches.

The ADG821 and ADG822 differ only in that both switches are normally open and normally closed, respectively. In the ADG823, Switch 1 is normally open and Switch 2 is normally closed. The ADG823 exhibits break-before-make switching action.

The ADG821, ADG822, and ADG823 are available in an 8-lead MSOP package.

REV. 0

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PRODUCT HIGHLIGHTS

1. Very Low On Resistance (0.5 Ω typ)

2. On Resistance Flatness (R

FLAT(ON)

) (0.15 Ω typ)

3. Automotive Temperature Range –40°C to +125°C

4. 200 mA Current Carrying Capability

5. Low Power Dissipation. CMOS construction ensures low power dissipation.

6. 8-Lead MSOP Package

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002

ADG821/ADG822/ADG823–SPECIFICATIONS

(VDD = 5 V ± 10%, GND = 0 V. All specifications

–40C to +125C, unless otherwise noted.)

–40C to –40C to

Parameter 25C +85C +125C

Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V On Resistance (R

) 0.5 Ω typ VS = 0 V to VDD, IS = 100 mA;

0.6 0.7 0.8 Ω max Test Circuit 1

On Resistance Match Between

Channels (∆R

)0.16 Ω typ VS = 0 V to VDD, IS = 100 mA

0.2 0.25 0.28 Ω max

On Resistance Flatness (R

FLAT(ON)

)0.15 Ω typ VS = 0 V to VDD, IS = 100 mA

0.23 0.26 0.3 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;

± 0.25 ± 3 ± 25 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;

± 0.25 ± 3 ± 25 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 4.5 V;

± 0.25 ± 3 ± 25 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

INL

INH

2.0 V min

0.8 V max

Input Current

INL

or I

INH

0.005 µA typ VIN = V ± 0.1 µA max

CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

OFF

Break-Before-Make Time Delay, t

(ADG823 Only) 1 ns min V

Charge Injection 15 pC typ V

33 ns typ RL = 50 Ω, CL = 35 pF, 45 48 52 ns max V

= 3 V; Test Circuit 4

11 ns typ RL = 50 Ω, CL = 35 pF, 16 19 21 ns max V 32 ns typ RL = 50 Ω, CL = 35 pF,

BBM

= 3 V; Test Circuit 4

= VS2 = 3 V; Test Circuit 5

= 2.5 V; RS = 0 Ω, CL = 1 nF;

Test Circuit 6

Off Isolation –52 dB typ R

= 50 Ω, CL = 5 pF,

f =1 MHz; Test Circuit 7

Channel-to-Channel Crosstalk –82 dB typ R

= 50 Ω, CL = 5 pF

f = 1 MHz; Test Circuit 9

Bandwidth –3 dB 24 MHz typ R

= 50 Ω, CL = 5 pF;

Test Circuit 8

(OFF) 85 pF typ f =1 MHz

(OFF) 98 pF typ f =1 MHz

CD, CS (ON) 230 pF typ f =1 MHz

POWER REQUIREMENTS V

Digital Inputs = 0 V or 5.5 V

0.001 µA typ

1.0 2.0 µA max

NOTES

Temperature range: Automotive range: –40°C to +125°C.

On resistance parameters tested with IS = 10 mA.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

= 5.5 V

or V

INL

= 5.5 V

INH

REV. 0–2–

(VDD = 2.7 V to 3.6 V, GND = 0 V. All specifications –40C to +125C, unless otherwise noted.)

ADG821/ADG822/ADG823

–40C to – 40C to

Parameter 25C +85C +125C

Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V On Resistance (R

) 0.7 Ω typ VS = 0 V to VDD, IS = 100 mA;

1.4 1.5 1.6 Ω max Test Circuit 1

On Resistance Match Between 0.16 Ω typ

Channels (∆R

On Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

) 0.2 0.25 0.28 Ω max VS = 0 V to VDD, IS = 100 mA

FLAT(ON)

(OFF) ± 0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V;

) 0.3 0.33 Ω typ VS = 0 V to VDD, IS = 100 mA

± 0.25 ± 3 ± 15 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V;

± 0.25 ± 3 ± 25 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ± 0.01 nA typ VS = VD = 1 V, or 3.3 V;

± 0.25 ± 3 ± 25 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

INL

INH

2.0 V min

0.8 V max

Input Current

INL

or I

INH

0.005 µA typ VIN = V ± 0.1 µA max

CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

OFF

Break-Before-Make Time Delay, t

(ADG823 Only) 1 ns min V

Charge Injection ± 2pC typ V

48 ns typ RL = 50 Ω, CL = 35 pF, 67 74 78 ns max V

= 1.5 V; Test Circuit 4

12 ns typ RL = 50 Ω, CL = 35 pF, 18 20 23 ns max V 40 ns typ RL = 50 Ω, CL = 35 pF,

BBM

= 1.5 V; Test Circuit 4

= VS2 = 1.5V; Test Circuit 5

=1.5 V; RS = 0 Ω, CL = 1 nF;

Test Circuit 6

Off Isolation –52 dB typ R

= 50 Ω, CL = 5 pF,

f = 1 MHz; Test Circuit 7

Channel-to-Channel Crosstalk –82 dB typ R

= 50 Ω, CL = 5 pF,

f = 1 MHz; Test Circuit 9

Bandwidth –3 dB 24 MHz typ R

= 50 Ω, CL = 5 pF;

Test Circuit 8

(OFF) 85 pF typ f =1 MHz

(OFF) 98 pF typ f =1 MHz

CD, CS (ON) 230 pF typ f =1 MHz

POWER REQUIREMENTS V

Digital Inputs = 0 V or 3.6 V

0.001 µA typ

1.0 2.0 µA max

NOTES

Temperature range: Automotive range: –40°C to +125°C.

On resistance parameters tested with IS = 10 mA.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

= 3.6 V

INL

= 3.6 V

or V

INH

REV. 0

–3–

Spec RIGHT

ADG821/ADG822/ADG823

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C, unless otherwise noted.) V

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

Analog Inputs

Digital Inputs

. . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or

–0.3 V to VDD + 0.3 V or

30 mA, Whichever Occurs First

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA

(Pulsed at 1 ms, 10% Duty Cycle max)

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 200 mA

Operating Temperature Range

Automotive . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C

Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C

Junction Temperature (T

Package Power Dissipation . . . . . . . . . . . . . . (T

max) . . . . . . . . . . . . . . . . . . . 150°C

max – TA)/θ

8-Lead MSOP Package

θJAThermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W

Table I. Truth Table for the ADG821/ADG822

ADG821 INx ADG822 INx Switch x Condition

01OFF 10ON

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W

Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300°C

IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . . 235°C

NOTES

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.

Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.

Table II. Truth Table for the ADG823

IN1 IN2 Switch S1 Switch S2

0 0 OFF ON 0 1 OFF OFF 1 0 ON ON 1 1 ON OFF

ORDERING GUIDE

Model Option Temperature Range Brand

Package Description Package

ADG821BRM –40°C to +125°C SQB MSOP (microSmall Outline IC) RM-8 ADG822BRM –40°C to +125°C SRB MSOP (microSmall Outline IC) RM-8 ADG823BRM –40°C to +125°C SSB MSOP (microSmall Outline IC) RM-8

Branding on MSOP packages is limited to three characters due to space constraints.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the

WARNING!

ADG821/ADG822/ADG823 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

ESD SENSITIVE DEVICE

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