ANALOG DEVICES ADG819 Service Manual

0.5  CMOS

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FEATURES Low On Resistance 0.8  Max at 125C

0.25  Max On Resistance Flatness

1.8 V to 5.5 V Single Supply 200 mA Current Carrying Capability Automotive Temperature Range: –40C to +125C Rail-to-Rail Operation 6-Lead SOT-23 Package, 8-Lead SOIC Package, and

6-Bump MicroCSP (Micro Chip Scale Package) ADG819 Fast Switching Times Typical Power Consumption (<0.01 W) TTL-/CMOS-Compatible Inputs Pin Compatible with the ADG719 (ADG819)

APPLICATIONS Power Routing Battery-Powered Systems Communication Systems Data Acquisition Systems Cellular Phones Modems PCMCIA Cards Hard Drives Relay Replacement

1.8 V to 5.5 V 2:1 Mux/SPDT Switches ADG819/ADG820

FUNCTIONAL BLOCK DIAGRAM

ADG819/

ADG820

SWITCHES SHOWN FOR A LOGIC “1” INPUT

GENERAL DESCRIPTION

The ADG819 and the ADG820 are monolithic, CMOS, SPDT (single-pole, double-throw) switches. These switches are designed on a submicron process that provides low power dissipation yet gives high switching speed, low On resistance, and low leakage currents.

Low power consumption and an operating supply range of 1.8 V to 5.5 V make the ADG819 and ADG820 ideal for battery-powered, portable instruments.

Each switch of the ADG819 and the ADG820 conducts equally well in both directions when on. The ADG819 exhibits breakbefore-make switching action, thus preventing momentary shorting when switching channels. The ADG820 exhibits make-beforebreak action.

The ADG819 and the ADG820 are available in a 6-lead SOT-23 package and an 8-lead µSOIC package. The ADG819 is also available in a 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP package. This chip occupies only a 1.14 mm × 2.18 mm area, making it the ideal candidate for space-constrained applications.

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PRODUCT HIGHLIGHTS

1. Very low ON resistance, 0.5 Ω typical

2. 1.8 V to 5.5 V single-supply operation

3. High current carrying capability

4. Tiny 6-lead SOT-23 package, 8-lead µSOIC package, and 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP package (ADG819 only)

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002

ADG819/ADG820–SPECIFICATIONS

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= 5 V  10%, GND = 0 V.)

–40C to –40C to

Parameter 25C +85C +125C

Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V ON Resistance (R

) 0.5 Ω typ VS = 0 V to VDD, IS = 100 mA;

0.6 0.7 0.8 Ω max Test Circuit 1 ON Resistance Match Between Channels (∆R

)0.06 Ω typ VS = 0 V to VDD, IS = 100 mA

0.08 0.1 0.12 Ω max ON Resistance Flatness (R

FLAT(ON)

) 0.1 Ω typ VS = 0 V to VDD, IS = 100 mA

0.17 0.2 0.25 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;

± 0.25 ± 3 ± 10 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ± 0.01 nA typ VS = VD = 1 V, or VS = VD = 4.5 V;

± 0.25 ± 3 ± 25 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

INL

INH

2.0 V min

0.8 V max

Input Current

INL

or I

INH

0.005 µA typ VIN = V

± 0.1 µA max

Digital Input Capacitance 5 pF typ

IN,

DYNAMIC CHARACTERISTICS

ADG819

35 ns typ RL = 50 Ω, CL = 35 pF, 45 50 55 ns max V

OFF

10 ns typ RL = 50 Ω, CL = 35 pF, 16 18 21 ns max V

Break-Before-Make Time Delay, t

BBM

5 ns typ RL = 50 Ω, CL = 35 pF,

1 ns min V

ADG820

10 ns typ RL = 50 Ω, CL = 35 pF, 18 20 22 ns max V

OFF

26 ns typ RL = 50 Ω, CL = 35 pF, 40 45 50 ns max V

Make-Before-Break Time Delay, t

MBB

15 ns typ RL = 50 Ω, CL = 35 pF,

1 ns min V

Charge Injection 20 pC typ V

Off Isolation –71 dB typ R

Channel-to-Channel Crosstalk –72 dB typ R

Bandwidth –3 dB 17 MHz typ R C

(OFF) 80 pF typ f = 1 MHz

(ON) 300 pF typ f = 1 MHz

D, CS

POWER REQUIREMENTS V

0.001 µA typ

1.0 2.0 µA max

NOTES

Temperature range is as follows: –40°C to +125°C.

ON resistance parameters tested with IS = 10 mA.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

= 5.5 V

or V

INL

= 3 V; Test Circuit 4

= VS2 = 3 V; Test Circuit 5

= 3 V; Test Circuit 4

= 0 V; Test Circuit 6

= 2.5 V, RS = 0 Ω, CL = 1 nF;

INH

Test Circuit 7

= 50 Ω, CL = 5 pF, f = 100 kHz;

Test Circuit 8

= 50 Ω, CL = 5 pF, f = 100 kHz;

Test Circuit 10

= 50 Ω, CL = 5 pF; Test Circuit 9

= 5.5 V

Digital Inputs = 0 V or 5.5 V

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SPECIFICATIONS

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ADG819/ADG820

(VDD = 2.7 V to 3.6 V, GND = 0 V.)

–40C to –40C to

Parameter 25C +85C +125C

Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V ON Resistance (R

) 0.7 Ω typ VS = 0 V to VDD, IS = 100 mA;

1.4 1.5 1.6 Ω max Test Circuit 1 ON Resistance Match Between Channels (∆R

)0.06 Ω typ VS = 0 V to VDD, IS = 100 mA

0.13 0.13 Ω max

ON Resistance Flatness (R

FLAT(ON)

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ± 0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V;

)0.25 Ω typ VS = 0 V to VDD, IS = 100 mA

= 3.6 V

± 0.25 ± 3 ± 10 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ± 0.01 nA typ VS = VD = 1 V, or VS = VD = 3.3 V;

± 0.25 ± 3 ± 25 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

INL

INH

2.0 V min

0.8 V max

Input Current

INL

or I

INH

0.005 µA typ VIN = V

± 0.1 µA max

Digital Input Capacitance 5 pF typ

IN,

DYNAMIC CHARACTERISTICS

ADG819 t

OFF

Break-Before-Make Time Delay, t

BBM

40 ns typ RL = 50 Ω, CL = 35 pF, 60 65 70 ns max V

= 1.5 V; Test Circuit 4

10 ns typ RL = 50 Ω, CL = 35 pF, 16 18 21 ns max V

= 1.5 V; Test Circuit

40 ns typ RL = 50 Ω, CL = 35 pF,

1 ns min V

= VS2 = 1.5 V; Test Circuit 5

ADG820 t

OFF

Make-Before-Break Time Delay, t

MBB

Charge Injection 10 pC typ V

20 ns typ RL = 50 Ω, CL = 35 pF, 35 40 45 ns max V

= 1.5 V; Test Circuit 4

30 ns typ RL = 50 Ω, CL = 35 pF, 45 50 55 ns max V

= 1.5 V; Test Circuit 4

10 ns typ RL = 50 Ω, CL = 35 pF,

1 ns min V

= 1.5 V; Test Circuit 6

= 1.5 V, RS = 0 Ω, CL = 1 nF;

Test Circuit 7

Off Isolation –71 dB typ R

= 50 Ω, CL = 5 pF, f = 100 kHz;

Test Circuit 8

Channel-to-Channel Crosstalk –72 dB typ R

= 50 Ω, CL = 5 pF, f = 100 kHz;

Test Circuit 10 Bandwidth –3 dB 17 MHz typ R C

(OFF) 80 pF typ f = 1 MHz

= 50 Ω, CL = 5 pF; Test Circuit 9

CD, CS (ON) 300 pF typ f = 1 MHz

POWER REQUIREMENTS V

= 3.6 V

Digital Inputs = 0 V or 3.6 V I

0.001 µA typ

1.0 2.0 µA max

NOTES

Temperature range is as follows: –40°C to +125°C.

ON resistance parameters tested with IS = 10 mA.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

INL

or V

INH

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ADG819/ADG820

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ABSOLUTE MAXIMUM RATINGS

(TA = 25°C, unless otherwise noted.)

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

Analog Inputs

. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First

Digital Inputs

. . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or

. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA

. . . . . . . . . . . . . . . .(Pulsed at 1 ms, 10% Duty Cycle Max)

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . 200 mA

Operating Temperature Range

Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Automotive . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C

Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C

µSOIC Package

␪

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W

␪

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W

SOT-23 Package (4-Layer Board)

␪

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 119°C/W

PIN CONFIGURATIONS

6-Lead SOT-23

8-Lead µSOIC

(RT-6)

GND

NC = NO CONNECT

GND

ADG819/

ADG820

TOP VIEW

(Not to Scale)

MicroCSP Package

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . TBD

␪

Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300°C

IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . 235°C

NOTES

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.

Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.

Table I. Truth Table for the ADG819/ADG820

IN Switch S1 Switch S2

0 ON OFF 1 OFF ON

2  3 MicroCSP

(RM-8)

TOP VIEW

(BUMPS AT THE BOTTOM)

NOT TO SCALE

S2 IN

GND

ADG819 ONLY

ADG819/

ADG820

TOP VIEW

(Not to Scale)

ORDERING GUIDE

Model Option Temperature Range Brand1Package Description Package

ADG819BRM –40°C to +125°C SNB µSOIC (MicroSmall Outline IC) RM-8 ADG819BRT –40°C to +125°C SNB SOT-23 (Plastic Surface-Mount) RT-6 ADG819BCB –40°C to +85°C SNB MicroCSP (Micro Chip Scale Package) CB-6 ADG820BRM –40°C to +125°C SPB µSOIC (MicroSmall Outline IC) RM-8 ADG820BRT –40°C to +125°C SPB SOT-23 (Plastic Surface-Mount) RT-6

NOTES

Branding on these packages is limited to three characters due to space constraints.

Contact factory for availability.

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