Analog Devices ADG811 2 3 a Datasheet

<0.5 Ω CMOS 1.65 V to 3.6 V

FEATURES

0.5 Ω typ on resistance

0.8 Ω max on resistance at 125°C

1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C High current carrying capability: 300 mA continuous Rail-to-rail switching operation Fast switching times: <25 ns Typical power consumption < 0.1 µW

APPLICATIONS

Cellular phones MP3 players Power routing Battery-powered systems PCMCIA cards Modems Audio and video signal routing Communications systems

GENERAL DESCRIPTION

The ADG811, ADG812, and ADG813 are low voltage CMOS devices containing four independently selectable switches. These switches offer ultralow on resistance of less than 0.8 Ω over the full temperature range. The digital inputs can handle

1.8 V logic with a 2.7 V to 3.6 V supply.

These devices contain four independent single-pole/singlethrow (SPST) switches. The ADG811 and ADG812 differ only in that the digital control logic is inverted. The ADG811 switches are turned on with a logic low on the appropriate control input, while a logic high is required to turn on the switches of the ADG812. The ADG813 contains two switches whose digital control logic is similar to the ADG811, while the logic is inverted on the other two switches.

Quad SPST Switches

ADG811/ADG812/ADG813

FUNCTIONAL BLOCK DIAGRAMS

S1

IN1

IN2

ADG811

IN3

IN4

IN1

D1

S2

IN2

D2

S3

D3

S4

D4

SWITCHES SHOWN FOR A LOGIC 1 INPUT

ADG812

IN3

IN4

Figure 1.

PRODUCT HIGHLIGHTS

1. <0.8 Ω over full temperature range of –40°C to +125°C.

2. Single 1.65 V to 3.6 V operation.

3. Operational with 1.8 V CMOS logic.

4. High current handling capability (300 mA continuous

current at 3.3 V).

5. Low THD+N (0.02% typ).

S1

IN1

D1

S2

IN2

D2

S3

D3

S4

D4

ADG813

IN3

IN4

S1

D1

S2

D2

S3

D3

S4

D4

04306-A-001

Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. The ADG813 exhibits break-before-make switching action.

The ADG811, ADG812, and ADG813 are fully specified for

3.3 V, 2.5 V, and 1.8 V supply operation. They are available in a 16-lead TSSOP package.

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

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ADG811/ADG812/ADG813

TABLE OF CONTENTS

ADG811/ADG812/ADG813—Specifications .............................. 3

Absolute Maximum Ratings............................................................ 6

ESD Caution.................................................................................. 6

Pin Configuration and Function Descriptions............................. 7

REVISION HISTORY

5/04—Data Sheet Changed from Rev. 0 to Rev. A

Updated Format..............................................................Universal

Updated Package Choices..............................................Universal

11/03—Revision 0: Initial Version

Typical Performance Characteristics..............................................8

Test Circuits..................................................................................... 11

Outline Dimensions....................................................................... 13

Ordering Guide .......................................................................... 13

Rev. A | Page 2 of 16

ADG811/ADG812/ADG813

ADG811/ADG812/ADG813—SPECIFICATIONS

Table 1. VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted1

Parameter +25°C –40°C to +85°C –40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 0.5 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA;

0.65 0.75 0.8 Ω max Figure 18 On Resistance Match between

Channels (∆R

On Resistance Flatness (R

)

ON

) 0.1 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA

FLAT(ON)

0.15 0.16 Ω max

LEAKAGE CURRENTS VDD = 3.6 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V;

±1 ±8 ±80 nA max Figure 19

Drain Off Leakage ID (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V;

±1 ±8 ±80 nA max Figure 19

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 3.3 V; Figure 20

±1 ±15 ±90 nA max DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I

INL

2 V min

INH

0.8 V max

INL

or I

0.005 µA typ VIN = V

INH

±0.1 µA max

CIN, Digital Input Capacitance 6 pF typ

DYNAMIC CHARACTERISTICS2

tON 21 ns typ RL = 50 Ω, CL = 35 pF

25 26 28 ns max VS = 1.5 V/0 V; Figure 21

t

4 ns typ RL = 50 Ω, CL = 35 pF

OFF

5 6 7 ns max VS = 1.5 V; Figure 21

Break-Before-Make Time Delay (t

(ADG813 only) 5 ns min VS1 = VS2 = 1.5 V; Figure 22

Charge Injection 30 pC typ

Off Isolation –67 dB typ

Channel-to-Channel Crosstalk –90 dB typ

Total Harmonic Distortion (THD + N) 0.02 %

Insertion Loss –0.05 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz –3 dB Bandwidth 90 MHz typ RL = 50 Ω, CL = 5 pF; Figure 25 CS (OFF) 30 pF typ CD (OFF) 35 pF typ CD, CS (ON) 60 pF typ

POWER REQUIREMENTS VDD = 3.6 V

IDD 0.003 µA typ Digital inputs = 0 V or 3.6 V

1.0 4 µA max

0.04 Ω typ VDD = 2.7 V, VS = 0.5 V, IS = 10 mA

0.075 0.08 Ω max

or V

INH

INL

) 17 ns typ RL = 50 Ω, CL = 35 pF

BBM

= 1.5 V, RS = 0 Ω, CL = 1 nF;

V

S

Figure 23

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 24

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 26

= 32 Ω, f = 20 Hz to 20 kHz,

R

L

V

= 2 V p-p

S

1

Temperature range for the Y version is –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Rev. A | Page 3 of 16

ADG811/ADG812/ADG813

Table 2. VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted1

Parameter +25°C –40°C to +85°C –40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 0.65 Ω typ VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA;

0.72 0.8 0.88 Ω max Figure 18 On Resistance Match between

Channels (∆R

On Resistance Flatness (R

)

ON

) 0.16 Ω typ VDD = 2.3 V; VS = 0 V to VDD, IS = 10 mA

FLAT(ON)

0.23 0.24 Ω max

LEAKAGE CURRENTS VDD = 2.7 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V;

±1 ±6 ±35 nA max Figure 19

Drain Off Leakage ID (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V;

±1 ±6 ±35 nA max Figure 19

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V; Figure 20

±1 ±11 ±70 nA max DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I

INL

1.7 V min

INH

0.7 V max

INL

or I

0.005 µA typ VIN = V

INH

±0.1 µA max

CIN, Digital Input Capacitance 6 pF typ

DYNAMIC CHARACTERISTICS2

tON 22 ns typ RL = 50 Ω, CL = 35 pF

27 29 30 ns max VS = 1.5 V/ 0 V; Figure 21

t

4 ns typ RL = 50 Ω, CL = 35 pF

OFF

6 7 8 ns max VS = 1.5 V; Figure 21

Break-Before-Make Time Delay (t

(ADG813 only) 5 ns min VS1 = VS2 = 1.5 V; Figure 22

Charge Injection 25 pC typ

Off Isolation –67 dB typ

Channel-to-Channel Crosstalk –90 dB typ

Total Harmonic Distortion (THD + N) 0.022 %

Insertion Loss –0.06 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz –3 dB Bandwidth 90 MHz typ RL = 50 Ω, CL = 5 pF; Figure 25 CS (OFF) 32 pF typ CD (OFF) 37 pF typ CD, CS (ON) 60 pF typ

POWER REQUIREMENTS VDD = 2.7 V

IDD 0.003 µA typ Digital inputs = 0 V or 2.7 V

1.0 4 µA max

0.04 Ω typ VDD = 2.3 V; VS = 0.55 V, IS = 10 mA

0.08 0.085 Ω max

or V

INH

INL

) 18 ns typ RL = 50 Ω, CL = 35 pF

BBM

= 1.25 V, RS = 0 Ω, CL = 1 nF;

V

S

Figure 23

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 24

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 26

= 32 Ω, f = 20 Hz to 20 kHz,

R

L

V

= 1.5 V p-p

S

1

Temperature range for the Y version is –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Rev. A | Page 4 of 16

ADG811/ADG812/ADG813

Table 3. VDD = 1.65 V to 1.95 V, GND = 0 V, unless otherwise noted1

Parameter +25°C –40°C to +85°C –40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 1 Ω typ VDD = 1.8 V, VS = 0 V to VDD, IS = 10 mA;

1.4 2.2 2.2 Ω max Figure 18

2.5 4 4 Ω max VDD = 1.65 V, VS = 0 V to VDD, IS = 10 mA On Resistance Match between

Channels (∆R

)

ON

0.1 Ω typ V

LEAKAGE CURRENTS VDD = 1.95 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V;

±1 ±5 ±30 nA max Figure 19

Drain Off Leakage ID (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V;

±1 ±5 ±30 nA max Figure 19

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V; Figure 20

±1 ±9 ±60 nA max DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current, I

INL

0.65VDD V min

INH

0.35VDD V max

INL

or I

0.005 µA typ VIN = V

INH

±0.1 µA max

CIN, Digital Input Capacitance 6 pF typ

DYNAMIC CHARACTERISTICS2

tON 27 ns typ RL = 50 Ω, CL = 35 pF

35 36 37 ns max VS = 1.5 V/ 0 V; Figure 21

t

6 ns typ RL = 50 Ω, CL = 35 pF

OFF

8 9 10 ns max VS = 1.5 V; Figure 21

Break-Before-Make Time Delay (t

) 20 ns typ RL = 50 Ω, CL = 35 pF

BBM

(ADG813 only) 5 ns min VS1 = VS2 = 1 V; Figure 22

Charge Injection 15 pC typ

Off Isolation –67 dB typ

Channel-to-Channel Crosstalk –90 dB typ

Total Harmonic Distortion (THD + N) 0.14 %

Insertion Loss –0.08 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz –3 dB Bandwidth 90 MHz typ RL = 50 Ω, CL = 5 pF; Figure 25 CS (OFF) 32 pF typ CD (OFF) 38 pF typ CD, CS (ON) 60 pF typ

POWER REQUIREMENTS VDD = 1.95 V

IDD 0.003 µA typ Digital inputs = 0 V or 1.95 V

1.0 4 µA max

= 1.65 V, VS = 0.7 V, IS = 10 mA

DD

or V

INH

INL

= 1 V, RS = 0 Ω, CL = 1 nF;

V

S

Figure 23

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 24

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 26

= 32 Ω, f = 20 Hz to 20 kHz,

R

L

= 1.2 V p-p

V

S

1

Temperature range for the Y version is –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Rev. A | Page 5 of 16