1.65 V to 3.6 V operation
Automotive temperature range: –40°C to +125°C
High current carrying capability: 300 mA continuous
Rail-to-rail switching operation
Fast switching times <25 ns
Typical power consumption (<0.1 µW)
APPLICATIONS
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Cellular phones
Modems
Audio and video signal routing
Communication systems
GENERAL DESCRIPTION
The ADG804 is a low voltage 4-channel CMOS multiplexer
comprising four single channels. This device offers ultralow
on resistance of less than 0.8 Ω over the full temperature range.
The digital inputs can handle 1.8 V logic with a 2.7 V to 3.6 V
supply.
4-Channel Multiplexer
ADG804
FUNCTIONAL BLOCK DIAGRAM
ADG804
2
S1
9
S2
S3
4
S4
7
1 OF 4
DECODER
1105
A0
A1EN
Figure 1.
PRODUCT HIGHLIGHTS
1. <0.8 Ω over full temperature range of –40°C to +125°C.
2. Single 1.65 V to 3.6 V operation.
3. Operational with 1.8 V CMOS logic.
4. High current handling capability (300 mA continuous
current at 3.3 V).
5. Low THD + N (0.02% typ).
6. Small 10-lead MSOP package.
8
D
04307-0-001
The ADG804 switches one of four inputs to a common output,
D, as determined by the 3-bit binary address lines, A0, A1, and
EN. A Logic 0 on the EN pin disables the device. The ADG804
has break-before-make switching.
The ADG804 is fully specified for 3.3 V, 2.5 V, and 1.8 V supply
operation. It is available in a 10-lead MSOP package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.1
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.5 Ω typ VDD = 2.7 V; VS = 0 V to VDD, IS = 10 mA; Figure 18
0.65 0.75 0.8 Ω max
On Resistance Match between 0.04 Ω typ VDD = 2.7 V; VS = 0.65 V, IS = 10 mA
Channels (∆RON) 0.075 0.08 Ω max
On Resistance Flatness (R
FLAT(ON)
0.15 0.16 Ω max IS = 10 mA
LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage IS (OFF) ±0.1 nA typ VS = 0.6 V/3.3 V; VD = 3.3 V/0.6 V; Figure 19
±1 nA max
Drain Off Leakage ID (OFF) ±0.1 nA typ VS = 0.6 V/3.3 V; VD = 3.3 V/0.6 V; Figure 19
±1 nA max
Channel On Leakage ID, IS (ON) ±0.1 nA typ VS = VD = 0.6 V or 3.3 V; Figure 20
±1 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current I
INL
2 V min
INH
0.8 V max
INL
or I
0.005 µA typ VIN = V
INH
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS2
t
TRANSISTION
30 32 35 ns max VS = 1.5 V/0 V; Figure 21
t
ENABLE 23 ns typ RL = 50 Ω, CL = 35 pF
ON
29 30 31 ns max VS = 1.5 V/0 V; Figure 23
t
ENABLE 5 ns typ RL = 50 Ω, CL = 35 pF
OFF
6 7 8 ns max VS = 1.5 V; Figure 23
Break-Before-Make Time Delay
)
(t
BBM
5 ns min VS1 = VS2 = 1.5 V; Figure 22
Charge Injection 28 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF,f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −75 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 27
Total Harmonic Distortion (THD+N)
Insertion Loss 0.06 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
−3 dB Bandwidth 33 MHz typ RL = 50 Ω, CL = 5 pF; Figure 26
CS (OFF) 24 pF typ
CD (OFF) 105 pF typ
CD, CS (ON) 125 pF typ
POWER REQUIREMENTS VDD = 3.6 V
IDD 0.003 µA typ Digital inputs = 0 V or 3.6 V
1.0 4 µA max
+25°C
−40°C to
+85°C
−40°C to
+125°C Unit
Test Conditions/Comments
) 0.1 Ω typ VDD = 2.7 V; VS = 0 V to VDD,
or V
INH
INL
24 ns typ RL = 50 Ω, CL = 35 pF
20 ns typ R
= 50 Ω, CL = 35 pF
L
0.02 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
1
Temperature range, Y version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.65 Ω typ VDD = 2.3 V; VS = 0 V to VDD, IS = 10 mA; Figure 18
0.77 0.8 0.88 Ω max
On Resistance Match between 0.4 Ω typ VDD = 2.3 V; VS = 0.7 V; IS = 10 mA
Channels (∆RON) 0.08 0.085 Ω max
On Resistance Flatness (R
) 0.16 Ω typ VDD = 2.3 V; VS = 0 V to VDD; IS = 10 mA
FLAT(ON)
0.23 0.24 Ω max
LEAKAGE CURRENTS VDD = 2.7 V
Source Off Leakage IS (OFF) ±0.1 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 19
±1 nA max
Drain Off Leakage ID (OFF) ±0.1 nA typ VS = 0.6/2.4 V, VD = 2.4/0.6 V; Figure 19
±1 nA max
Channel On Leakage ID, IS (ON) ±0.1 nA typ VS = VD = 0.6 V or 2.4 V; Figure 20
±1 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current I
INL
1.7 V min
INH
0.7 V max
INL
or I
0.005 µA typ VIN = V
INH
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS2
T
TRANSISTION
31 33 35 ns max VS = 1.5 V/0 V; Figure 21
t
ENABLE 25 ns typ RL = 50 Ω, CL = 35 pF
ON
30 32 34 ns max VS = 1.5 V/0 V; Figure 22
t
ENABLE 5 ns typ RL = 50 Ω, CL = 35 pF
OFF
7 8 9 ns max VS = 1.5 V; Figure 22
Break-Before-Make Time Delay (t
5 ns min VS1 = VS2 = 1.5 V; Figure 22
Charge Injection 20 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −75 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 27
Total Harmonic Distortion (THD + N) 0.022 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p
Insertion Loss −0.06 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
Analog Signal Range 0 V to VDD V
On Resistance (RON) 1 Ω typ VDD = 1.8 V; VS = 0 V to VDD, IS = 10 mA
1.4 2.2 2.2 Ω max
2.2 4 4 Ω max
On Resistance Match between Channels
)
(∆R
ON
LEAKAGE CURRENTS VDD = 1.95 V
Source Off Leakage IS (OFF) ±0.1 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V;
±1 nA max Figure 19
Drain Off Leakage ID (OFF) ±0.1 nA typ VS = 0.6/1.65 V, VD = 1.65/0.6 V;
±1 nA max Figure 19
Channel On Leakage ID, IS (ON) ±0.1 nA typ VS = VD = 0.6 V or 1.65 V; Figure 20
±1 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current I
INL
0.65 VDD V min
INH
0.35 VDD V max
INL
or I
0.005 µA typ VIN = V
INH
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS2
t
TRANSISTION
40 42 44 ns max VS = 1.5 V/0 V; Figure 21
t
ENABLE 34 ns typ RL = 50 Ω, CL = 35 pF
ON
39 40 41 ns max VS = 1.5 Ω/0 V; Figure 22
t
ENABLE 8 ns typ RL = 50 Ω, CL = 35 pF
OFF
10 11 13 ns max VS = 1.5 V; Figure 22
Break-Before-Make Time Delay (t
) 22 ns typ RL = 50 Ω, CL = 35 pF
BBM
5 ns min VS1 = VS2 = 1 V; Figure 22
Charge Injection 12 pC typ VS = 1 V, RS = 0 V, CL = 1 nF; Figure 24
Off Isolation −67 dB typ
Channel-to-Channel Crosstalk −75 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,
Figure 27
Total Harmonic Distortion (THD + N)) 0.14 %
Insertion Loss 0.08 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
–3 dB Bandwidth 30 MHz typ RL = 50 Ω, CL = 5 pF; Figure 26
CS (OFF) 26 pF typ
CD (OFF) 115 pF typ
CD, CS (ON) 130 pF typ
POWER REQUIREMENTS VDD = 1.95 V