Analog Devices ADG801 2 Datasheet
< 0.4 CMOS 1.8 V to 5.5 V,
a
FEATURES
0.4 Max ON Resistance @ 125C
0.08 Max ON Resistance Flatness @ 125C
1.8 V to 5.5 V Single Supply
Automotive Temperature Range –40C to +125C
400 mA Current Carrying Capability
Tiny 6-Lead SOT-23 and 8-Lead SOIC Packages
35 ns Switching Times
Low Power Consumption
TTL/CMOS-Compatible Inputs
Pin Compatible with ADG701/ADG702
APPLICATIONS
Power Routing
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Data Acquisition Systems
Communication Systems
Relay Replacement
Battery-Powered Systems
SPST Switches
ADG801/ADG802
FUNCTIONAL BLOCK DIAGRAMS
ADG801
S
ADG802
S
SWITCHES SHOWN FOR A LOGIC “1” INPUT
D
IN
D
IN
GENERAL DESCRIPTION
The ADG801/ADG802 are monolithic CMOS, SPST (Single
Pole, Single Throw) switches with On Resistance of less than 0.4 Ω.
These switches are designed on an advanced submicron
that provides extremely low On Resistance, high switching
speed, and low leakage currents.
The low On Resistance of < 0.4 Ω means these parts are ideal
for applications where low On Resistance switching is critical.
The ADG801 is a normally open (NO) switch, while the ADG802
is normally closed (NC). Each switch conducts equally well in
both directions when On.
The ADG801 and ADG802 are available in 6-lead SOT-23 and
8-lead µSOIC packages.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
process
PRODUCT HIGHLIGHTS
1. Low On Resistance (0.25 Ω typical)
2. 1.8 V to 5.5 V single-supply operation
3. Tiny 6-lead SOT-23 and 8-lead µSOIC packages
4. 400 mA current carrying capability
5. Automotive temperature range –40C to +125C
6. Pin-compatible with ADG701 (ADG801)
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2002
Pin-compatible with ADG702 (ADG802)
ADG801/ADG802–SPECIFICATIONS
(VDD = 5 V 10%, GND = 0 V. All specifications –40C to +125C,
1
unless otherwise noted.)
–40C to –40C to
Parameter 25C +85C +125C
2
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
On Resistance (R
)0.25 Ω typ VS = 0 V to VDD, IS = 100 mA;
ON
DD
V
0.3 0.35 0.4 Ω max Test Circuit 1
On Resistance Flatness (R
FLAT(ON)
)0.05 Ω typ VS = 0 V to VDD, IS = 100 mA
0.07 0.08 Ω max
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
S
DD
± 0.25 ± 3 ±30 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
D
± 0.25 ± 3 ±30 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ± 0.01 nA typ VS = VD = 1 V, or 4.5 V;
D
± 0.25 ± 3 ±30 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.0 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
± 0.1 µA max
CIN, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Charge Injection 50 pC typ V
3
35 ns typ RL = 50 Ω, CL = 35 pF
45 50 55 ns max V
= 3 V; Test Circuit 4
S
9ns typ RL = 50 Ω, CL = 35 pF
15 18 21 ns max V
= 3 V; Test Circuit 4
S
= 2.5 V, RS = 0 Ω; CL = 1 nF;
S
Test Circuit 5
Off Isolation –61 dB typ R
= 50 Ω, CL = 5 pF; f = 100 kHz;
L
Test Circuit 6
Bandwidth –3 dB 12 MHz typ R
(OFF) 180 pF typ f = 1 MHz
C
S
C
(OFF) 180 pF typ f = 1 MHz
D
= 50 Ω, CL = 5 pF; Test Circuit 7
L
CD, CS (ON) 420 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
0.001 µA typ Digital Inputs = 0 V or 5.5 V
= 5.5 V
DD
1.0 2.0 µA max
NOTES
1
Temperature range is as follows: Automotive Temperature Range: –40 °C to +125°C.
2
On Resistance parameters tested with IS = 10 mA.
3
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
= 5.5 V
INL
or V
INH
–2–
REV. 0
ADG801/ADG802
SPECIFICATIONS
Parameter 25C +85C +125C
ANALOG SWITCH
Analog Signal Range 0 V to VDDV
On Resistance (R
On Resistance Flatness (R
LEAKAGE CURRENTS V
Source OFF Leakage I
Drain OFF Leakage I
Channel On Leakage I
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
or I
I
INL
INH
CIN, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Charge Injection 10 pC typ V
Off Isolation –61 dB typ R
Bandwidth –3 dB 12 MHz typ R
C
(OFF) 180 pF typ f = 1 MHz
S
C
(OFF) 180 pF typ f = 1 MHz
D
CD, CS (ON) 420 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
NOTES
1
Temperature range is as follows: Automotive Temperature Range: –40 °C to +125°C.
2
On Resistance parameters tested with IS = 10 mA.
3
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
) 0.4 Ω typ VS = 0 V to VDD, IS = 100 mA;
ON
(OFF) ± 0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V;
S
(OFF) ± 0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V;
D
, IS (ON) ± 0.01 nA typ VS = VD = 1 V, or 3.3 V;
D
INH
INL
(VDD = 2.7 V to 3.6 V, GND = 0 V. All specifications –40C to +125C,
–40C to –40C to
2
0.6 0.65 0.7 Ω max Test Circuit 1
FLAT(ON)
) 0.1 0.1 0.1 Ω typ VS = 0 V to VDD, IS = 100 mA
± 0.25 ± 3 ±30 nA max Test Circuit 2
± 0.25 ± 3 ±30 nA max Test Circuit 2
± 0.25 ± 3 ±30 nA max Test Circuit 3
2.0 V min
0.8 V max
0.005 µA typ VIN = V
± 0.1 µA max
3
40 ns typ RL = 50 Ω, CL = 35 pF
55 60 65 ns max V
9 ns typ RL = 50 Ω, CL = 35 pF
15 18 21 ns max V
0.001 µA typ Digital Inputs = 0 V or 3.6 V
1.0 2.0 µA max
unless otherwise noted.)
Unit Test Conditions/Comments
DD
= 1.5 V; Test Circuit 4
S
= 1.5 V; Test Circuit 4
S
= 1.5 V, RS = 0 Ω, CL = 1 nF;
S
Test Circuit 5
= 50 Ω, CL = 5 pF, f = 100 kHz,
L
Test Circuit 6
= 50 Ω, CL = 5 pF; Test Circuit 7
L
= 3.6 V
DD
1
= 3.6 V
INL
or V
INH
REV. 0
–3–
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