Analog Devices ADG788BCP, ADG786BCP Datasheet

2.5 , 1.8 V to 5.5 V, 2.5 V Triple/Quad

a

SPDT Switches in Chip Scale Packages

FEATURES

1.8 V to 5.5 V Single Supply
2.5 V Dual Supply

2.5  On Resistance

0.5  On Resistance Flatness
100 pA Leakage Currents
19 ns Switching Times
Triple SPDT: ADG786
Quad SPDT: ADG788
20-Lead 4 mm  4 mm Chip Scale Packages
Low Power Consumption
TTL/CMOS-Compatible Inputs
For Functionally-Equivalent Devices in 16-Lead TSSOP

Packages, See ADG733/ADG734

APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems

S1B

S1A

S2A

S2B

ADG786/ADG788

FUNCTIONAL BLOCK DIAGRAMS

ADG786

D1

D2

LOGIC

A2

A0

A1

EN

SWITCHES SHOWN FOR A LOGIC “1” INPUT

S3A
D3
S3B

S1A

S1B

IN1

IN2

S2B

S2A

S4A

D1

ADG788

D2

D2
S4B

IN4

IN3
S3B

D3
S3A

GENERAL DESCRIPTION

The ADG786 and ADG788 are low voltage, CMOS devices
comprising three independently selectable SPDT (single pole,
double throw) switches and four independently selectable SPDT
switches respectively.

Low power consumption and operating supply range of 1.8 V to

5.5 V and dual ±2.5 V make the ADG786 and ADG788 ideal
for battery powered, portable instruments and many other
applications. All channels exhibit break-before-make switch­ing action preventing momentary shorting when switching
channels. An EN input on the ADG786 is used to enable or
disable the device. When disabled, all channels are switched OFF.

These multiplexers are designed on an enhanced submicron
process that provides low power dissipation yet gives high switch­ing speed, very low on resistance, high signal bandwidths and
low leakage currents. On resistance is in the region of a few
ohms, is closely matched between switches and very flat over
the full signal range. These parts can operate equally well in
either direction and have an input signal range which extends to
the supplies.

The ADG786 and ADG788 are available in small 20-lead
chip scale packages.

PRODUCT HIGHLIGHTS

1. Small 20-Lead 4 mm × 4 mm Chip Scale Packages (CSP).

2. Single/Dual Supply Operation. The ADG786 and ADG788
are fully specified and guaranteed with 3 V ± 10% and
5 V ± 10% single supply rails, and ±2.5 V ± 10% dual
supply rails.

3. Low On Resistance (2.5 Ω typical).

4. Low Power Consumption (<0.01 µW).

5. Guaranteed Break-Before-Make Switching Action.

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2001

1

ADG786/ADG788–SPECIFICA TIONS

B Version

–40C

Parameter +25C to +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

On-Resistance Match between 0.1 Ω typ V

Channels (∆R

On-Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I
Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

ADG786 t

t

ON

OFF

Break-Before-Make Time Delay, t
Charge Injection ±3 pC typ V
Off Isolation –72 dB typ R
Channel-to-Channel Crosstalk –67 dB typ R
–3 dB Bandwidth 160 MHz typ R

(OFF) 11 pF typ f = 1 MHz

C

S

CD, CS (ON) 34 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature range is as follows: B Version: –40°C to +85 °C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

) 2.5 Ω typ VS = 0 V to VDD, IDS = 10 mA;

ON

4.5 5.0 Ω max Test Circuit 1

) 0.4 Ω max

ON

FLAT(ON)

) 0.5 Ω typ VS = 0 V to VDD, IDS = 10 mA

1.2 Ω max

(OFF) ±0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;

S

±0.1 ±0.3 nA max Test Circuit 2

, IS (ON) ±0.01 nA typ VD = VS = 1 V, or 4.5 V;

D

±0.1 ±0.5 nA max Test Circuit 3

INH

INL

2.4 V min

0.8 V max

0.005 µA typ VIN = V
±0.1 µA max

2

19 ns typ RL = 300 Ω, CL = 35 pF;

34 ns max V

7 ns typ RL = 300 Ω, CL = 35 pF;

12 ns max V

(EN) 20 ns typ RL = 300 Ω, CL = 35 pF;

40 ns max V

(EN) 7 ns typ RL = 300 Ω, CL = 35 pF;

12 ns max V

D

13 ns typ RL = 300 Ω, CL = 35 pF;

1 ns min V

0.001 µA typ Digital Inputs = 0 V or 5.5 V

1.0 µA max

(VDD = 5 V  10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)

V

DD

= 0 V to VDD, IDS = 10 mA

S

= 5.5 V

DD

or V

INL

= 3 V, V

S1A

= 3 V, Test Circuit 4

S

= 3 V, Test Circuit 5

S

= 3 V, Test Circuit 5

S

= 3 V, Test Circuit 6

S

= 2 V, RS = 0 Ω, CL = 1 nF;

S

INH

= 0 V, Test Circuit 4

S1B

Test Circuit 7

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 8

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9

= 50 Ω, CL = 5 pF, Test Circuit 10

L

= 5.5 V

DD

–2–

REV. 0

ADG786/ADG788

SPECIFICA TIONS

Parameter +25C to +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

On-Resistance Match between 0.1 Ω typ V

Channels (∆R

On-Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I
Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

I

or I

INL

INH

CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

ADG786 t

t

ON

OFF

Break-Before-Make Time Delay, t
Charge Injection ±3 pC typ V
Off Isolation –72 dB typ R
Channel-to-Channel Crosstalk –67 dB typ R
–3 dB Bandwidth 160 MHz typ R

C

(OFF) 11 pF typ f = 1 MHz

S

CD, CS (ON) 34 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85 °C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)6 Ω typ VS = 0 V to VDD, IDS = 10 mA;

ON

) 0.5 Ω max

ON

(OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

S

, IS (ON) ±0.01 nA typ VS = VD = 1 V or 3 V;

D

INH

INL

(EN) 29 ns typ RL = 300 Ω, CL = 35 pF;

(EN) 9 ns typ RL = 300 Ω, CL = 35 pF;

(VDD = 3 V  10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)

B Version

–40C

V

DD

11 12 Ω max Test Circuit 1

FLAT(ON)

)3Ω typ VS = 0 V to VDD, IDS = 10 mA

±0.1 ±0.3 nA max Test Circuit 2
±0.1 ±0.5 nA max Test Circuit 3

2.0 V min

0.8 V max

0.005 µA typ VIN = V
±0.1 µA max

2

28 ns typ RL = 300 Ω, CL = 35 pF;

55 ns max V

9 ns typ RL = 300 Ω, CL = 35 pF;

16 ns max V
60 ns max V
16 ns max V

D

22 ns typ RL = 300 Ω, CL = 35 pF;

1 ns min V

0.001 µA typ Digital Inputs = 0 V or 3.3 V

1.0 µA max

= 0 V to VDD, IDS = 10 mA

S

= 3.3 V

DD

or V

INL

= 2 V, V

S1A

= 2 V, Test Circuit 4

S

= 2 V, Test Circuit 5

S

= 2 V, Test Circuit 5

S

= 2 V, Test Circuit 6

S

= 1 V, RS = 0 Ω, CL = 1 nF;

S

INH

= 0 V, Test Circuit 4

S1B

Test Circuit 7

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 8

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9

= 50 Ω, CL = 5 pF, Test Circuit 10

L

= 3.3 V

DD

1

REV. 0

–3–

ADG786/ADG788–SPECIFICA TIONS

1

DUAL SUPPLY

(VDD = +2.5 V  10%, VSS = –2.5 V  10%, GND = 0 V, unless otherwise noted.)

B Version

–40C

Parameter +25C to +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VSS to V
On Resistance (R

) 2.5 Ω typ VS = VSS to VDD, IDS = 10 mA;

ON

DD

V

4.5 5.0 Ω max Test Circuit 1

On-Resistance Match between 0.1 Ω typ V

Channels (∆R

On-Resistance Flatness (R

) 0.4 Ω max

ON

FLAT(ON)

) 0.5 Ω typ VS = VSS to VDD, IDS = 10 mA

= VSS to VDD, IDS = 10 mA

S

1.2 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.01 nA typ

S

= +2.75 V, VSS = –2.75 V

DD

VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;

±0.1 ±0.3 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA typ

D

VS = VD = +2.25 V/–1.25 V, Test Circuit 3

±0.1 ±0.5 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

1.7 V min

0.7 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

±0.1 µA max

CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

ADG786 t

(EN) 21 ns typ RL = 300 Ω, CL = 35 pF;

ON

t

(EN) 10 ns typ RL = 300 Ω, CL = 35 pF;

OFF

Break-Before-Make Time Delay, t
Charge Injection ±5 pC typ V

2

21 ns typ RL = 300 Ω, CL = 35 pF;

35 ns max V

= 1.5 V, V

S1A

= 0 V, Test Circuit 4

S1B

10 ns typ RL = 300 Ω, CL = 35 pF;

16 ns max V
40 ns max V
16 ns max V

D

13 ns typ RL = 300 Ω, CL = 35 pF;

1 ns min V

= 1.5 V, Test Circuit 4

S

= 1.5 V, Test Circuit 5

S

= 1.5 V, Test Circuit 5

S

= 1.5 V, Test Circuit 6

S

= 0 V, RS = 0 Ω, CL = 1 nF;

S

Test Circuit 7

Off Isolation –72 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 8

Channel-to-Channel Crosstalk –67 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9

–3 dB Bandwidth 160 MHz typ R

(OFF) 11 pF typ f = 1 MHz

C

S

= 50 Ω, CL = 5 pF, Test Circuit 10

L

CD, CS (ON) 34 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

0.001 µA typ Digital Inputs = 0 V or 2.75 V

= +2.75 V

DD

1.0 µA max

I

SS

0.001 µA typ VSS = –2.75 V

1.0 µA max Digital Inputs = 0 V or 2.75 V

NOTES

1

Temperature range is as follows: B Version: –40°C to +85 °C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–4–

REV. 0