Analog Devices ADG779BKS Datasheet
CMOS 1.8 V to 5.5 V, 2.5
a
FEATURES
1.8 V to 5.5 V Single Supply
2.5 On Resistance
0.75 On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times
20 ns
t
ON
6 ns
t
OFF
Typical Power Consumption (<0.01 W)
TTL/CMOS-Compatible
APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
SPDT Switch/2:1 Mux In Tiny SC70 Package
ADG779
FUNCTIONAL BLOCK DIAGRAM
ADG779
S2
S1
IN
SWITCHES SHOWN FOR
A LOGIC "1" INPUT
D
GENERAL DESCRIPTION
The ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submicron process that provides low power dissipation yet gives
high switching speed, low on resistance and low leakage
currents.
The ADG779 operates from a single supply range of 1.8 V
to 5.5 V, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from
Analog Devices.
Each switch of the ADG779 conducts equally well in both
directions when on. The ADG779 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidth
of greater than 200 MHz can be achieved.
The ADG779 is available in a 6-lead SC70 package.
PRODUCT HIGHLIGHTS
1. Tiny 6-Lead SC70 Package.
2. 1.8 V to 5.5 V Single Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
3. Very Low R
operation, R
4. On-Resistance Flatness (R
5. –3 dB Bandwidth >200 MHz.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
7. 14 ns Switching Times.
(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
ON
is typically 40 Ω over the temperature range.
ON
FLAT(ON)
) (0.75 Ω typ).
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2001
1
ADG779–SPECIFICATIONS
B Version
Parameter 25C +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
On Resistance (R
On Resistance Match Between
Channels (∆R
On-Resistance Flatness (R
LEAKAGE CURRENTS
Source OFF Leakage I
Channel ON Leakage I
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
or I
I
INL
INH
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
Off Isolation –67 dB typ R
Channel-to-Channel Crosstalk –62 dB typ R
Bandwidth –3 dB 200 MHz typ R
(OFF) 7 pF typ f = 1 MHz
C
S
CD, CS (ON) 27 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
)2 .5 Ω typ VS = 0 V to VDD, IS = –10 mA,
ON
56 Ω max Test Circuit 1
) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA
ON
FLAT(ON)
2
(OFF) ±0.01 ± 0.05 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V,
S
, IS (ON) ± 0.01 ± 0.05 nA typ VS = VD = 1 V, or VS = VD = 4.5 V,
D
INH
INL
) 0.75 Ω typ VS = 0 V to VDD, IS = –10 mA
0.005 µA typ VIN = V
2
14 ns typ RL = 300 Ω, CL = 35 pF
3 ns typ RL = 300 Ω, CL = 35 pF
8 ns typ RL = 300 Ω, CL = 35 pF,
D
–87 dB typ R
–82 dB typ R
0.001 µA typ
(VDD = 5 V 10%, GND = 0 V)
–40C to
DD
V
0.8 Ω max
1.2 Ω max
2.4 V min
0.8 V max
± 0.1 µA max
20 ns max V
6 ns max V
1 ns min V
1.0 µA max
VDD = 5.5 V
Test Circuit 2
Test Circuit 3
or V
INL
= 3 V, Test Circuit 4
S
= 3 V, Test Circuit 4
S
= VS2 = 3 V, Test Circuit 5
S1
= 50 Ω, CL = 5 pF, f = 10 MHz
L
= 50 Ω, CL = 5 pF, f = 1 MHz,
L
INH
Test Circuit 6
= 50 Ω, CL = 5 pF, f = 10 MHz
L
= 50 Ω, CL = 5 pF, f = 1 MHz,
L
Test Circuit 7
= 50 Ω, CL = 5 pF, Test Circuit 8
L
= 5.5 V
DD
Digital Inputs = 0 V or 5 V
–2–
REV. 0
ADG779
SPECIFICATIONS
1
(VDD = 3 V 10%, GND = 0 V)
B Version
–40C to
Parameter 25C +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
On Resistance (R
)67Ω typ VS = 0 V to VDD, IS = –10 mA,
ON
DD
V
10 Ω max Test Circuit 1
On Resistance Match Between
Channels (∆R
) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA
ON
0.8 Ω max
On-Resistance Flatness (R
LEAKAGE CURRENTS
Source OFF Leakage I
S
FLAT(ON)
2
(OFF) ± 0.01 ± 0.05 nA typ VS = 3 V/1 V, VD = 1 V/3 V,
) 2.5 Ω typ VS = 0 V to VDD, IS = –10 mA
VDD = 3.3 V
Test Circuit 2
Channel ON Leakage I
, IS (ON) ± 0.01 ± 0.05 nA typ VS = VD = 1 V, or VS = VD = 3 V,
D
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.0 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
INL
or V
INH
± 0.1 µA max
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
Off Isolation –67 dB typ R
2
16 ns typ RL = 300 Ω, CL = 35 pF
24 ns max V
= 2 V, Test Circuit 4
S
4 ns typ RL = 300 Ω, CL = 35 pF
7 ns max V
D
8 ns typ RL = 300 Ω, CL = 35 pF
1 ns min V
–87 dB typ R
= 2 V, Test Circuit 4
S
= VS2 = 2 V, Test Circuit 5
S1
= 50 Ω, CL = 5 pF, f = 10 MHz
L
= 50 Ω, CL = 5 pF, f = 1 MHz,
L
Test Circuit 6
Channel-to-Channel Crosstalk –62 dB typ R
–82 dB typ R
= 50 Ω, CL = 5 pF, f = 10 MHz
L
= 50 Ω, CL = 5 pF, f = 1 MHz,
L
Test Circuit 7
Bandwidth –3 dB 200 MHz typ R
C
(OFF) 7 pF typ f = 1 MHz
S
= 50 Ω, CL = 5 pF, Test Circuit 8
L
CD, CS (ON) 27 pF typ f = 1 MHz
POWER REQUIREMENTS V
= 3.3 V
DD
Digital Inputs = 0 V or 3 V
I
DD
0.001 µA typ
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–3–REV. 0
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