−3 dB bandwidth >200 MHz
Rail-to-rail operation
6-lead SC70 package
Fast switching times
20 ns
t
ON
t
6 ns
OFF
Typical power consumption (<0.01 μW)
TTL/CMOS compatible
APPLICATIONS
Battery-powered systems
Communication systems
Sample hold systems
Audio signal routing
Video switching
Mechanical reed relay replacements
GENERAL DESCRIPTION
The ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submicron
process that provides low power dissipation yet gives high
switching speed, low on resistance, and low leakage currents.
The ADG779 operates from a single supply range of 1.8 V to
5.5 V
, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices, Inc.
Each switch of the ADG779 conducts equally well in both
dir
ections when on. The ADG779 exhibits break-before-make
switching action.
Because of the advanced submicron process, −3 dB bandwidth
f greater than 200 MHz can be achieved.
o
The ADG779 is available in a 6-lead SC70 package.
ADG779
FUNCTIONAL BLOCK DIAGRAM
ADG779
S2
S1
IN
SWITCHES SHOWN FOR
A LOGIC 1 INPUT
Figure 1.
PRODUCT HIGHLIGHTS
1. Tiny 6-Lead SC70 Package.
2. 1.8 V t
3. Ve
4. On-
5. −3 dB B
6. Lo
7. 14 n
o 5.5 V Single-Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
r y Low R
operation, R
Resistance Flatness (R
(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
ON
is typically 40 Ω over the temperature range.
ON
FLAT (ON)
andwidth > 200 MHz.
w Power Dissipation. CMOS construction ensures low
power dissipation.
s Switching Times.
D
02491-001
) (0.75 Ω typ).
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Analog Signal Range 0 V to VDD V
On Resistance (RON) 2.5 Ω typ VS = 0 V to VDD, IS = −10 mA, see Figure 12
5 6 Ω max
On-Resistance Match Between Channels (ΔRON) 0.1 Ω typ VS = 0 V to VDD, IS = −10 mA
0.8 Ω max
On-Resistance Flatness (R
1.2 Ω max
LEAKAGE CURRENTS
2
Source Off Leakage IS (Off) ±0.01 ±0.05 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 13
Channel On Leakage ID, IS (On) ±0.01 ±0.05 nA typ VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 14
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
I
or I
INL
0.005 μA typ VIN = V
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
tON 14 ns typ RL = 300 Ω, CL = 35 pF
20 ns max VS = 3 V, see Figure 15
t
3 ns typ RL = 300 Ω, CL = 35 pF
OFF
6 ns max VS = 3 V, see Figure 15
Break-Before-Make Time Delay, tD 8 ns typ RL = 300 Ω, CL = 35 pF
1 ns min VS1 = VS2 = 3 V, see Figure 16
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−87 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17
Channel-to-Channel Crosstalk −62 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18
Bandwidth –3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 19
CS (Off) 7 pF typ f = 1 MHz
CD, CS (On) 27 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V
Digital Inputs = 0 V or 5 V
IDD 0.001 μA typ
1.0 μA max
1
Temperature range is B Version, −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
1
−40°C to
+85°C Unit Test Conditions/Comments
) 0.75 Ω typ VS = 0 V to VDD, IS = −10 mA
FLAT (ON)
V
2.4 V min
INH
0.8 V max
INL
2
= 5.5 V
DD
INL
or V
INH
Rev. A | Page 3 of 12
ADG779
www.BDTIC.com/ADI
VDD = 3 V ± 10%, GND = 0 V
Table 2.
Parameter 25°C
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 6 7 Ω typ VS = 0 V to VDD, IS = –10 mA, see Figure 12
10 Ω max
On-Resistance Match Between Channels (ΔRON) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA
0.8 Ω max
On-Resistance Flatness (R
LEAKAGE CURRENTS
2
Source Off Leakage IS (Off) ±0.01 ±0.05 nA typ VS = 3 V/1 V, VD = 1 V/3 V, see Figure 13
Channel On Leakage ID, IS (On) ±0.01 ±0.05 nA typ VS = VD = 1 V, or VS = VD = 3 V, see Figure 14
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
I
or I
0.005 μA typ VIN = V
INL
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
tON 16 ns typ RL = 300 Ω, CL = 35 pF
24 ns max VS = 2 V, see Figure 15
t
4 ns typ RL = 300 Ω, CL = 35 pF
OFF
7 ns max VS = 2 V, see Figure 15
Break-Before-Make Time Delay, tD 8 ns typ RL = 300 Ω, CL = 35 pF
1 ns min VS1 = VS2 = 2 V, see Figure 16
Off Isolation –67 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
–87 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17
Channel-to-Channel Crosstalk –62 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
–82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18
Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 19
CS (Off) 7 pF typ f = 1 MHz
CD, CS (On) 27 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 3.3 V
Digital Inputs = 0 V or 3 V
IDD 0.001 μA typ
1.0 μA max
1
Temperature range is B Version, −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
1
B Version
−40°C to
+85°C Unit Test Conditions/Comments
) 2.5 Ω typ VS = 0 V to VDD, IS = –10 mA
FLAT (ON)
V
2.0 V min
INH
0.8 V max
INL
2
= 3.3 V
DD
INL
or V
INH
Rev. A | Page 4 of 12
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