ANALOG DEVICES ADG779 Service Manual

CMOS 1.8 V to 5.5 V, 2.5 Ω
www.BDTIC.com/ADI
SPDT Switch/2:1 Mux in Tiny SC70 Package

FEATURES

1.8 V to 5.5 V single supply
2.5 Ω on resistance
0.75 Ω on-resistance flatness
−3 dB bandwidth >200 MHz Rail-to-rail operation 6-lead SC70 package Fast switching times
20 ns
t
ON
t
6 ns
OFF
Typical power consumption (<0.01 μW) TTL/CMOS compatible

APPLICATIONS

Battery-powered systems Communication systems Sample hold systems Audio signal routing Video switching Mechanical reed relay replacements

GENERAL DESCRIPTION

The ADG779 is a monolithic CMOS SPDT (single-pole, double-throw) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents.
The ADG779 operates from a single supply range of 1.8 V to
5.5 V
, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices, Inc.
Each switch of the ADG779 conducts equally well in both dir
ections when on. The ADG779 exhibits break-before-make
switching action.
Because of the advanced submicron process, −3 dB bandwidth
f greater than 200 MHz can be achieved.
o
The ADG779 is available in a 6-lead SC70 package.
ADG779

FUNCTIONAL BLOCK DIAGRAM

ADG779
S2
S1
IN
SWITCHES SHOWN FOR
A LOGIC 1 INPUT
Figure 1.

PRODUCT HIGHLIGHTS

1. Tiny 6-Lead SC70 Package.
2. 1.8 V t
3. Ve
4. On-
5. −3 dB B
6. Lo
7. 14 n
o 5.5 V Single-Supply Operation. The ADG779 offers high performance, including low on resistance and fast switching times, and is fully specified and guaranteed with 3 V and 5 V supply rails.
r y Low R
operation, R
Resistance Flatness (R
(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
ON
is typically 40 Ω over the temperature range.
ON
FLAT (ON)
andwidth > 200 MHz.
w Power Dissipation. CMOS construction ensures low
power dissipation.
s Switching Times.
D
02491-001
) (0.75 Ω typ).
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 © 2005 Analog Devices, Inc. All rights reserved.
ADG779
www.BDTIC.com/ADI

TABLE OF CONTENTS

Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................6
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Product Highlights........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5

REVISION HISTORY

10/05—Rev. 0 to Rev. A
Updated Format..................................................................Universal
Changes to Table 1............................................................................ 3
Changes to Table 2............................................................................ 4
Changes to Table 3............................................................................ 5
Changes to Terminology Section.................................................... 7
Changes to Ordering Guide.......................................................... 12
Te r mi n ol o g y .......................................................................................7
Typical Perf or m an c e Character i st ics ..............................................8
Test Cir c ui t s..................................................................................... 10
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
7/01—Revision 0: Initial Version
Rev. A | Page 2 of 12
ADG779
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SPECIFICATIONS

VDD = 5 V ± 10%, GND = 0 V
Table 1.
B Version
Parameter 25°C
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 2.5 Ω typ VS = 0 V to VDD, IS = −10 mA, see Figure 12
5 6 Ω max
On-Resistance Match Between Channels (ΔRON) 0.1 Ω typ VS = 0 V to VDD, IS = −10 mA
0.8 Ω max On-Resistance Flatness (R
1.2 Ω max LEAKAGE CURRENTS
2
Source Off Leakage IS (Off) ±0.01 ±0.05 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 13 Channel On Leakage ID, IS (On) ±0.01 ±0.05 nA typ VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 14
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current
I
or I
INL
0.005 μA typ VIN = V
INH
±0.1 μA max DYNAMIC CHARACTERISTICS
tON 14 ns typ RL = 300 Ω, CL = 35 pF 20 ns max VS = 3 V, see Figure 15 t
3 ns typ RL = 300 Ω, CL = 35 pF
OFF
6 ns max VS = 3 V, see Figure 15 Break-Before-Make Time Delay, tD 8 ns typ RL = 300 Ω, CL = 35 pF 1 ns min VS1 = VS2 = 3 V, see Figure 16 Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−87 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17 Channel-to-Channel Crosstalk −62 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18 Bandwidth –3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 19 CS (Off) 7 pF typ f = 1 MHz
CD, CS (On) 27 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 5.5 V Digital Inputs = 0 V or 5 V
IDD 0.001 μA typ
1.0 μA max
1
Temperature range is B Version, −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
1
−40°C to +85°C Unit Test Conditions/Comments
) 0.75 Ω typ VS = 0 V to VDD, IS = −10 mA
FLAT (ON)
V
2.4 V min
INH
0.8 V max
INL
2
= 5.5 V
DD
INL
or V
INH
Rev. A | Page 3 of 12
ADG779
www.BDTIC.com/ADI
VDD = 3 V ± 10%, GND = 0 V
Table 2.
Parameter 25°C ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 6 7 Ω typ VS = 0 V to VDD, IS = –10 mA, see Figure 12 10 Ω max On-Resistance Match Between Channels (ΔRON) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA
0.8 Ω max On-Resistance Flatness (R
LEAKAGE CURRENTS
2
Source Off Leakage IS (Off) ±0.01 ±0.05 nA typ VS = 3 V/1 V, VD = 1 V/3 V, see Figure 13 Channel On Leakage ID, IS (On) ±0.01 ±0.05 nA typ VS = VD = 1 V, or VS = VD = 3 V, see Figure 14
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current
I
or I
0.005 μA typ VIN = V
INL
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
tON 16 ns typ RL = 300 Ω, CL = 35 pF 24 ns max VS = 2 V, see Figure 15 t
4 ns typ RL = 300 Ω, CL = 35 pF
OFF
7 ns max VS = 2 V, see Figure 15 Break-Before-Make Time Delay, tD 8 ns typ RL = 300 Ω, CL = 35 pF 1 ns min VS1 = VS2 = 2 V, see Figure 16 Off Isolation –67 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz –87 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17 Channel-to-Channel Crosstalk –62 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz –82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18 Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 19 CS (Off) 7 pF typ f = 1 MHz
CD, CS (On) 27 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 3.3 V Digital Inputs = 0 V or 3 V
IDD 0.001 μA typ
1.0 μA max
1
Temperature range is B Version, −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
1
B Version
−40°C to +85°C Unit Test Conditions/Comments
) 2.5 Ω typ VS = 0 V to VDD, IS = –10 mA
FLAT (ON)
V
2.0 V min
INH
0.8 V max
INL
2
= 3.3 V
DD
INL
or V
INH
Rev. A | Page 4 of 12
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