ANALOG DEVICES ADG779 Service Manual

CMOS 1.8 V to 5.5 V, 2.5 Ω

www.BDTIC.com/ADI

SPDT Switch/2:1 Mux in Tiny SC70 Package

FEATURES

1.8 V to 5.5 V single supply

2.5 Ω on resistance

0.75 Ω on-resistance flatness

−3 dB bandwidth >200 MHz Rail-to-rail operation 6-lead SC70 package Fast switching times

20 ns

t

ON

t

6 ns

OFF

Typical power consumption (<0.01 μW) TTL/CMOS compatible

APPLICATIONS

Battery-powered systems Communication systems Sample hold systems Audio signal routing Video switching Mechanical reed relay replacements

GENERAL DESCRIPTION

The ADG779 is a monolithic CMOS SPDT (single-pole, double-throw) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents.

The ADG779 operates from a single supply range of 1.8 V to

5.5 V

, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices, Inc.

Each switch of the ADG779 conducts equally well in both dir

ections when on. The ADG779 exhibits break-before-make

switching action.

Because of the advanced submicron process, −3 dB bandwidth

f greater than 200 MHz can be achieved.

o

The ADG779 is available in a 6-lead SC70 package.

ADG779

FUNCTIONAL BLOCK DIAGRAM

ADG779

S2

S1

IN

SWITCHES SHOWN FOR

A LOGIC 1 INPUT

Figure 1.

PRODUCT HIGHLIGHTS

1. Tiny 6-Lead SC70 Package.

2. 1.8 V t

3. Ve

4. On-

5. −3 dB B

6. Lo

7. 14 n

o 5.5 V Single-Supply Operation. The ADG779 offers high performance, including low on resistance and fast switching times, and is fully specified and guaranteed with 3 V and 5 V supply rails.

r y Low R

operation, R

Resistance Flatness (R

(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V

ON

is typically 40 Ω over the temperature range.

ON

FLAT (ON)

andwidth > 200 MHz.

w Power Dissipation. CMOS construction ensures low

power dissipation.

s Switching Times.

D

02491-001

) (0.75 Ω typ).

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

ADG779

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REVISION HISTORY

10/05—Rev. 0 to Rev. A

Updated Format..................................................................Universal

Changes to Table 1............................................................................ 3

Changes to Table 2............................................................................ 4

Changes to Table 3............................................................................ 5

Changes to Terminology Section.................................................... 7

Changes to Ordering Guide.......................................................... 12

Te r mi n ol o g y .......................................................................................7

Typical Perf or m an c e Character i st ics ..............................................8

Test Cir c ui t s..................................................................................... 10

Outline Dimensions ....................................................................... 12

Ordering Guide .......................................................................... 12

7/01—Revision 0: Initial Version

Rev. A | Page 2 of 12

ADG779

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SPECIFICATIONS

VDD = 5 V ± 10%, GND = 0 V

Table 1.

B Version

Parameter 25°C

ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 2.5 Ω typ VS = 0 V to VDD, IS = −10 mA, see Figure 12

5 6 Ω max

On-Resistance Match Between Channels (ΔRON) 0.1 Ω typ VS = 0 V to VDD, IS = −10 mA

0.8 Ω max On-Resistance Flatness (R

1.2 Ω max LEAKAGE CURRENTS

2

Source Off Leakage IS (Off) ±0.01 ±0.05 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 13 Channel On Leakage ID, IS (On) ±0.01 ±0.05 nA typ VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 14

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current

I

or I

INL

0.005 μA typ VIN = V

INH

±0.1 μA max DYNAMIC CHARACTERISTICS

tON 14 ns typ RL = 300 Ω, CL = 35 pF 20 ns max VS = 3 V, see Figure 15 t

3 ns typ RL = 300 Ω, CL = 35 pF

OFF

6 ns max VS = 3 V, see Figure 15 Break-Before-Make Time Delay, tD 8 ns typ RL = 300 Ω, CL = 35 pF 1 ns min VS1 = VS2 = 3 V, see Figure 16 Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz

−87 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17 Channel-to-Channel Crosstalk −62 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz

−82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18 Bandwidth –3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 19 CS (Off) 7 pF typ f = 1 MHz

CD, CS (On) 27 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 5.5 V Digital Inputs = 0 V or 5 V

IDD 0.001 μA typ

1.0 μA max

1

Temperature range is B Version, −40°C to +85°C.

2

Guaranteed by design, not subject to production test.

1

−40°C to +85°C Unit Test Conditions/Comments

) 0.75 Ω typ VS = 0 V to VDD, IS = −10 mA

FLAT (ON)

V

2.4 V min

INH

0.8 V max

INL

2

= 5.5 V

DD

INL

or V

INH

Rev. A | Page 3 of 12

ADG779

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VDD = 3 V ± 10%, GND = 0 V

Table 2.

Parameter 25°C ANALOG SWITCH

Analog Signal Range 0 V to VDD V On Resistance (RON) 6 7 Ω typ VS = 0 V to VDD, IS = –10 mA, see Figure 12 10 Ω max On-Resistance Match Between Channels (ΔRON) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA

0.8 Ω max On-Resistance Flatness (R

LEAKAGE CURRENTS

2

Source Off Leakage IS (Off) ±0.01 ±0.05 nA typ VS = 3 V/1 V, VD = 1 V/3 V, see Figure 13 Channel On Leakage ID, IS (On) ±0.01 ±0.05 nA typ VS = VD = 1 V, or VS = VD = 3 V, see Figure 14

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current

I

or I

0.005 μA typ VIN = V

INL

INH

±0.1 μA max

DYNAMIC CHARACTERISTICS

tON 16 ns typ RL = 300 Ω, CL = 35 pF 24 ns max VS = 2 V, see Figure 15 t

4 ns typ RL = 300 Ω, CL = 35 pF

OFF

7 ns max VS = 2 V, see Figure 15 Break-Before-Make Time Delay, tD 8 ns typ RL = 300 Ω, CL = 35 pF 1 ns min VS1 = VS2 = 2 V, see Figure 16 Off Isolation –67 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz –87 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17 Channel-to-Channel Crosstalk –62 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz –82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18 Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 19 CS (Off) 7 pF typ f = 1 MHz

CD, CS (On) 27 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 3.3 V Digital Inputs = 0 V or 3 V

IDD 0.001 μA typ

1.0 μA max

1

Temperature range is B Version, −40°C to +85°C.

2

Guaranteed by design, not subject to production test.

1

B Version

−40°C to +85°C Unit Test Conditions/Comments

) 2.5 Ω typ VS = 0 V to VDD, IS = –10 mA

FLAT (ON)

V

2.0 V min

INH

0.8 V max

INL

2

= 3.3 V

DD

INL

or V

INH

Rev. A | Page 4 of 12

ADG779

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ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter Rating

VDD to GND −0.3 V to +7 V Analog, Digital Inputs

Peak Current, S or D

Continuous Current, S or D 30 mA Operating Temperature Range

Industrial (B Version) −40°C to +85°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C SC70 Package, Power Dissipation 315 mW

θJA Thermal Impedance 332°C/W

θJC Thermal Impedance 120°C/W Lead Temperature, Soldering

Vapor Phase (60 sec) 215°C

Infrared (15 sec) 220°C Reflow Soldering (Pb-free)

Peak Temperature 260 (+0/−5)°C Time at Peak Temperature 10 sec to 40 sec

1

Overvoltages at IN, S, or D are clamped by internal diodes. Current should be

limited to the maximum ratings given.

1

−0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first

100 mA (pulsed at 1 ms,

10% duty c

ycle max)

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Table 4. Truth Table

ADG779 IN Switch S1 Switch S2

0 On Off 1 Off On

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

Rev. A | Page 5 of 12

ADG779

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PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

IN

1

ADG779

V

2

TOP VIEW

DD

(Not to S cale)

GND

3

Figure 2. Pin Configuration

Table 5. Pin Function Descriptions

Pin No. Mnemonic Description

1 IN Logic Control Input. 2 V

DD

Most Positive Power Supply Potential. 3 GND Ground (0 V) Reference. 4 S1 Source Terminal. Can be an input or an output. 5 D Drain Terminal. Can be an input or an output. 6 S2 Source Terminal. Can be an input or an output.

S2

6

D

5

S1

4

02491-002

Rev. A | Page 6 of 12

ADG779

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TERMINOLOGY

V

DD

Most positive power supply potential.

I

DD

Positive supply current.

GND

Ground (0 V) reference.

S

Source terminal. Can be an input or an output.

D

Drain terminal. Can be an input or an output.

IN

Logic control input.

(VS)

V

D

Analog voltage on drain (D) and source (S) terminals.

R

ON

Ohmic resistance between the D and S.

R

FLAT (ON)

Flatness is defined as the difference between the maximum and minimum value of on resistance as measured.

ΔR

ON

On-resistance mismatch between any two channels.

I

(Off)

S

Source leakage current with the switch off.

I

(Off)

D

Drain leakage current with the switch off.

I

, IS (On)

D

Channel leakage current with the switch on.

V

INL

Maximum input voltage for Logic 0.

V

INH

Minimum input voltage for Logic 1.

(I

INL

INH

)

I

Input current of the digital input.

C

(Off)

S

Off switch source capacitance. Measured with reference to

round.

g

C

(Off)

D

Off switch drain capacitance. Measured with reference to

round.

g

, CS (On)

C

D

On switch capacitance. Measured with reference to ground.

C

IN

Digital input capacitance.

t

ON

Delay time between the 50% and 90% points of the digital input and switch on condition.

t

OFF

Delay time between the 50% and 90% points of the digital input and switch off condition.

t

BBM

On or off time measured between the 80% points of both switches when switching from one to another.

Charge Injection

A measure of the glitch impulse transferred from the digital

nput to the analog output during on/off switching.

i

Off Isolation

A measure of unwanted signal coupling through an off switch.

Crosstalk

A measure of unwanted signal that is coupled through from one ch

annel to another because of parasitic capacitance.

−3 dB Bandwidth

The frequency at which the output is attenuated by 3 dB.

On Response

The frequency response of the on switch.

Insertion Loss

The loss due to the on resistance of the switch.

THD + N

The ratio of harmonic amplitudes plus noise of a signal to the f

undamental.

Rev. A | Page 7 of 12

ADG779

m

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TYPICAL PERFORMANCE CHARACTERISTICS

6.0

5.5

5.0

4.5

4.0

3.5

(Ω)

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

VDD=3V

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

OR VS– DRAIN OR SOURCE VO LTAGE (V)

D

VDD=5V

VDD=2.7V

TA=25°C

VDD=4.5V

2491-003

0.15

0.10

0.05

CURRENT (nA)

0

IS(OFF)

–0.05

0 102030405060708090

TEMPERATURE (°C)

ID,IS(ON)

VDD=5V

=4.5V/1V

V

D

V

=1V/4.5V

S

02491-006

+85°C

+25°C

–40°C

DD

D

= 3 V

(VS) Single Supplies

VDD = 3V

(VS) for

D

Figure 3. On Resistance as a Function of V

6.0

5.5

5.0

4.5

4.0

3.5

(Ω)

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0

OR VS – DRAIN OR SOURCE VO LTAGE (V)

V

D

+85°C

+25°C

–40°C

Figure 4. On Resistance as a Function of V

Different Temperatures V

6.0

5.5

5.0

4.5

4.0

3.5

(Ω)

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

OR VS – DRAIN OR SOURCE VOLTAGE (V)

V

D

VDD = 5V

Figure 6. Leakage Currents as a Function of Temperature

0.15

0.10

0.05

CURRENT (nA)

0

–0.05

0 102030405060708090

02491-004

IS (OFF)

TEMPERATURE ( °C)

ID, IS (ON)

VDD = 3V V

= 3V/1V

D

V

= 1V/3V

S

02491-007

Figure 7. Leakage Currents as a Function of Temperature

10

VDD = 5V

1m

100µ

10µ

(A)

1µ

SUPPLY

I

100n

10n

1n

1 10 100 1k 10k 100k 1M 10M 100M

02491-005

FREQUENCY (Hz)

2491-008

Figure 5. On Resistance as a Function of V

Different Temperatures V

DD

= 5 V

(VS) for

D

Rev. A | Page 8 of 12

Figure 8. Supply Current vs. Input Switching Frequency

ADG779

–

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30

VDD = 5V, 3V

–40

–50

–60

–70

–80

–90

OFF IS OLATION (dB)

–100

–110

–120

–130

10k 100k 1M 10M 100M

Figure 9. Off Isolat

30

VDD = 5V, 3V

–40

–50

–60

–70

–80

–90

CROSSTALK (d B)

–100

–110

–120

–130

10k 100k 1M 10M 100M

FREQUENCY (Hz)

ion vs. Frequency

FREQUENCY (Hz)

Figure 10. Crosstalk vs. Frequency

02491-009

02491-010

0

VDD = 5V

–2

–4

ON RESPONSE (dB)

–6

10k 100k 1M 10M 100M

FREQUENCY (Hz)

Figure 11. On Response vs. Frequency

02491-011

Rev. A | Page 9 of 12

ADG779

V

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TEST CIRCUITS

I

DS

(OFF)IS(OFF)

I

SD

D

A

V

D

V

S

02491-013

Figure 14. On Leakage

SD

V

S

RON=V1/I

Figure 12. On Resistance

V1

A

DS

02491-012

S

Figure 13. Off Leakage

DD

0.1µF

V

DD

GND

D

R

L

300Ω

C

L

35pF

V

OUT

S

IN

V

OUT

50% 50%

90%

t

ON

90%

t

OFF

I

(ON)

SD

D

A

V

D

02491-014

02491-015

Figure 15. Switching Times

DD

0.1µF

V

IN

V

S1

V

S2

S1

S2

IN

V

IN

DD

GND

D2

D

R

L2

300Ω

C

L2

35pF

V

OUT

Figure 16. Break-Before-Make Time Delay, t

0V

V

OUT

0V

50% 50%

t

D

50%50%

t

D

02491-016

Rev. A | Page 10 of 12

ADG779

V

Ω

V

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0.1µF

DD

0.1µF

DD

V

DD

IN

V

IN

OFF ISOLATION = 20 log

S

D

GND

50Ω

Figure 17. Off Isolation

NETWORK

ANALYZER

V

OUT

R

L

50Ω

V

S

CHANNEL-TO -CHANNEL CROSSTALK = 20 log

Figure 18. Channel-to-Channel Crosstalk

NETWORK

ANALYZER

50Ω

V

S

V

OUT

R

L

50Ω

V

OUT

V

S

02491-017

IN

V

DD

S

D

GND

INSERTION LOSS = 20 log

V

OUT

V

WITHOUT SWITCH

OUT

NETWORK

ANALYZER

50Ω

R

L

50Ω

WITH SWITCH

V

S

V

OUT

02491-019

Figure 19. Bandwidth

DD

0.1µF

V

DD

S1

S2

IN

GND

V

OUT

V

D

R 50

S

2491-018

Rev. A | Page 11 of 12

ADG779

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OUTLINE DIMENSIONS

2.20

2.00

1.80

2.40

1.35

1.25

1.15

PIN 1

1.30 BSC

1.00

0.90

0.70

0.10 MAX

0.10 COPLANARITY

COMPLIANT TO JEDEC STANDARDS MO-203-AB

Figure 20. 6-Lead Thin Shrink Small Outline Transistor Package [SC70]

4 5 6

2.10

3 2 1

1.80

0.65 BSC

S-6)

0.40

0.10

0.22

0.08

0.30

0.15

1.10

0.80

SEATING PLANE

(K

Dimensions shown in millimeters

0.46

0.36

0.26

ORDERING GUIDE

Package

Model Temperature Range Package Description

ADG779BKS-R2 –40°C to +85°C 6-Lead Thin Shrink Small Outline Transistor Package (SC70) KS-6 SKB ADG779BKS-REEL –40°C to +85°C 6-Lead Thin Shrink Small Outline Transistor Package (SC70) KS-6 SKB ADG779BKS-REEL7 –40°C to +85°C 6-Lead Thin Shrink Small Outline Transistor Package (SC70) KS-6 SKB ADG779BKSZ-R2 ADG779BKSZ-REEL

2

–40°C to +85°C 6-Lead Thin Shrink Small Outline Transistor Package (SC70) KS-6 S0M

2

–40°C to +85°C 6-Lead Thin Shrink Small Outline Transistor Package (SC70) KS-6 S0M

ADG779BKSZ-REEL72–40°C to +85°C 6-Lead Thin Shrink Small Outline Transistor Package (SC70) KS-6 S0M

1

Brand on these packages is limited to three characters due to space constraints.

2

Z = Pb-free part.

Op

tion Branding

1

Rev. A | Page 12 of 12

ANALOG DEVICES ADG779 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES

APPLICATIONS

GENERAL DESCRIPTION

FUNCTIONAL BLOCK DIAGRAM

PRODUCT HIGHLIGHTS

TABLE OF CONTENTS

REVISION HISTORY

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

ESD CAUTION

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

TERMINOLOGY

TYPICAL PERFORMANCE CHARACTERISTICS

TEST CIRCUITS

OUTLINE DIMENSIONS

ORDERING GUIDE