Bandwidth: >400 MHz
Low insertion loss and on resistance: 2.2 Ω typical
On resistance flatness: 0.3 Ω typical
Single 3 V/5 V supply operation
Very low distortion: <0.3%
Low quiescent supply current:
Fast switching times
= 6 ns
t
ON
t
= 3 ns
OFF
TTL-/CMOS-compatible
Pb-free packages
16-lead QSSOP
16-lead 3 mm × 3 mm body LFCSP
GENERAL DESCRIPTION
The ADG774A is a monolithic CMOS device comprising four
2:1 multiplexer/demultiplexers with high impedance outputs.
The CMOS process provides low power dissipation yet offers
high switching speed and low on resistance. The on resistance
variation is typically less than 0.5 Ω over the input signal range.
The bandwidth of the ADG774A is typically 400 MHz and this,
upled with low distortion (typically 0.3%), makes the part
co
suitable for switching of high speed data signals.
1 nA typical
Mux with 3 ns Switching Time
ADG774A
FUNCTIONAL BLOCK DIAGRAM
S1A
S1B
S2A
S2B
S3A
S3B
S4A
S4B
These switches conduct equally well in both directions when
o
n. In the off condition, signal levels up to the supplies are
blocked. The ADG774A switches exhibit break-before-make
switching action.
PRODUCT HIGHLIGHTS
1. Wide bandwidth data rates of >400 MHz.
2. Ultralow power dissipation.
ADG774A
1 OF 2
DECODER
IN
EN
Figure 1.
D1
D2
D3
D4
2373-001
The on resistance profile is very flat over the full analog input
nge ensuring excellent linearity and low distortion. CMOS
ra
construction ensures ultralow power dissipation.
The ADG774A operates from a single 3.3 V/5 V supply and is
TL logic-compatible. The control logic for each switch is
T
shown in the truth table (see Tab le 5 ).
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Analog Signal Range 0 to 2.5 V
On Resistance, RON 2.2 Ω typ VD = 0 V to 1 V, IS = −10 mA
3.5 4 Ω max
On Resistance Match Between Channels, ∆RON 0.15 Ω typ VD = 0 V to 1 V, IS = −10 mA
0.5 Ω max
On Resistance Flatness, R
0.3 Ω typ VD = 0 V to 1 V, IS = −10 mA
FLAT(ON)
0.6 Ω max
LEAKAGE CURRENTS
Source Off Leakage, IS (OFF) ±0.001 nA typ VD = 3 V/1 V, VS = 1 V/3 V, see Figure 17
±0.1 ±0.25 nA max
Drain Off Leakage, ID (OFF) ±0.001 nA typ VD = 3 V/1 V, VS = 1 V/3 V, see Figure 17
±0.1 ±0.25 nA max
Channel On Leakage, ID, IS (ON) ±0.001 nA typ VD = VS = 3 V/1 V, see Figure 18
±0.1 ±0.25 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.4 V min
INH
0.8 V max
INL
Input Current
I
or I
INL
0.001 μA typ VIN = V
INH
±0.1 μA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS
tON, tON (EN)
2
6 ns typ C
12 ns max
t
, t
(EN)
OFF
OFF
3 ns typ C
6 ns max
Break-Before-Make Time Delay, tD 3 ns typ CL = 35 pF, RL = 50 Ω, VS1 = VS2 = 2 V, see Figure 23
1 ns min
Off Isolation −65 dB typ f = 10 MHz, RL = 50 Ω, see Figure 20
Channel-to-Channel Crosstalk −70 dB typ f = 10 MHz, RL = 50 Ω, see Figure 21
Bandwidth −3 dB 400 MHz typ RL = 50 Ω, see Figure 19
Distortion 0.3 % typ RL = 100 Ω
Charge Injection 6 pC typ CL = 1 nF, see Figure 24, VS = 0 V
CS (OFF) 5 pF typ
CD (OFF) 7.5 pF typ
CD, CS (ON) 12 pF typ
POWER REQUIREMENTS VDD = 5.5 V
Digital inputs = 0 V or VDD
IDD 1 μA max
0.001 μA typ
1
Temperature range for B version is −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
1
or V
INH
INL
= 35 pF, RL = 50 Ω, VS = 2 V, see Figure 22
L
= 35 pF, RL = 50 Ω, VS = 2 V, see Figure 22
L
Rev. B | Page 3 of 16
ADG774A
www.BDTIC.com/ADI
VDD = 3 V ± 10%, GND = 0 V, all specifications T
MIN
to T
, unless otherwise noted.
MAX
1
Table 2.
B Version
Parameter 25°C T
MIN
to T
Unit Test Conditions/Comments
MAX
ANALOG SWITCH
Analog Signal Range 0 to 1.5 V
On Resistance, RON 4 Ω typ VD = 0 V to 1 V; IS = −10 mA
6 7 Ω max
On Resistance Match Between Channels, ∆RON
0.15 Ω typ VD = 0 V to 1 V, IS = −10 mA
0.5 Ω max
On Resistance Flatness, R
1.5 Ω typ VD = 0 V to 1 V, IS = −10 mA
FLAT(ON)
3 Ω max
LEAKAGE CURRENTS
Source Off Leakage, IS (OFF) ±0.001 nA typ VD = 2 V/1 V, VS = 1 V/2 V, see Figure 17
±0.1 ±0.25 nA max
Drain Off Leakage, ID (OFF) ±0.001 nA typ VD = 2 V/1 V, VS = 1 V/2 V, see Figure 17
±0.1 ±0.25 nA max
Channel On Leakage, ID, IS(ON) ±0.001 nA typ VD = VS = 2 V/1 V, see Figure 18
±0.1 ±0.25 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.0 V min
INH
0.4 V max
INL
Input Current
I
or I
INL
0.001 μA typ VIN = V
INH
INL
or V
INH
±0.1 μA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS
tON, tON (EN)
2
7 ns typ C
= 35 pF, RL = 50 Ω, VS = 1.5 V, see Figure 22
L
14 ns max
t
, t
(EN)
OFF
OFF
4 ns typ C
= 35 pF, RL = 50 Ω, VS = 1.5 V, see Figure 22
L
8 ns max
Break-Before-Make Time Delay, tD 3 ns typ CL = 35 pF, RL = 50 Ω, VS1 = VS2 = 1.5 V, see Figure 23
1 ns min
Off Isolation −65 dB typ f = 10 MHz, RL = 50 Ω
Channel-to-Channel Crosstalk −70 dB typ f = 10 MHz, RL = 50 Ω, see Figure 21
Bandwidth −3 dB 400 MHz typ RL = 50 Ω, see Figure 19
Distortion 1.5 % typ RL = 100 Ω
Charge Injection 4 pC typ CL = 1 nF, see Figure 24, VS = 0 V
CS (OFF) 5 pF typ
CD (OFF) 7.5 pF typ
CD, CS (ON) 12 pF typ
POWER REQUIREMENTS VDD = 3.3 V
Digital inputs = 0 V or VDD
IDD 1 μA max
0.001 μA typ
1
Temperature range for B version is −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Rev. B | Page 4 of 16
ADG774A
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameters Rating
VDD to GND −0.3 V to +6 V
Analog, Digital Inputs
Continuous Current, S or D 100 mA
Peak Current, S or D
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
Thermal Impedance, θJA
16-Lead QSSOP 105.44°C/W
16-Lead LFCSP(3 mm × 3 mm) 48.7°C/W
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
2
Measured with the device soldered on a four-layer board.
1
−0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
300 mA (pulsed at 1 ms,
10% duty c
ycle max)
2
2
Stresses above those listed under Absolute Maximum Ratings
ma
y cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
Rev. B | Page 5 of 16
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