ANALOG DEVICES ADG774 Service Manual

CMOS 3 V/5 V,

1 OF 2

DECODER

ADG774

S1A

S1B

S2A

S2B

S3A

S3B

S4A

S4B

www.BDTIC.com/ADI

FEATURES Low Insertion Loss and On Resistance: 2.2  Typical On Resistance Flatness 0.5  Typical Automotive Temperature Range

–40C to +125C –3 dB Bandwidth = 240 MHz Single 3 V/5 V Supply Operation Rail-to-Rail Operation Very Low Distortion: 0.5% Low Quiescent Supply Current (1 nA Typical) Fast Switching Times

7 ns

4 ns

OFF

TTL/CMOS Compatible

APPLICATIONS USB 1.1 Signal Switching Circuits Cell Phones PDAs Battery-Powered Systems Communications Systems Data Acquisition Systems Token Ring 4 Mbps/16 Mbps Audio and Video Switching Relay Replacement

Wide Bandwidth Quad 2:1 Mux

ADG774

FUNCTIONAL BLOCK DIAGRAM

GENERAL DESCRIPTION

The ADG774 is a monolithic CMOS device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMOS process provides low power dissipation yet gives high switching speed and low on resistance. The on resistance variation is typically less than 0.5 Ω with an input signal ranging from 0 V to 5 V.

The bandwidth of the ADG774 is greater than 200 MHz; this, coupled with low distortion (typically 0.5%), makes the part suitable for switching USB 1.1 data signals and fast Ethernet signals.

The on resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion when switching audio signals. Fast switching speed, coupled with high signal bandwidth, also makes the parts suitable for video signal switching. CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments.

REV. C

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

The ADG774 operates from a single 3.3 V/5 V supply and is TTL logic compatible. The control logic for each switch is shown in the Truth Table.

These switches conduct equally well in both directions when ON, and have an input signal range that extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked. The ADG774 switches exhibit break-before-make switching action.

PRODUCT HIGHLIGHTS

1. Wide –3 dB Bandwidth, 240 MHz.

2. Ultralow Power Dissipation.

3. Extended Signal Range. The ADG774 is fabricated on a CMOS process giving an increased signal range that fully extends to the supply rails.

4. Low Leakage Over Temperature.

5. Break-Before-Make Switching. This prevents channel shorting when the switches are configured as a multiplexer.

6. Crosstalk Typically –70 dB @ 30 MHz.

7. Off Isolation Typically –60 dB @ 10 MHz.

ADG774–SPECIFICATIONS

www.BDTIC.com/ADI

SINGLE SUPPLY

(VDD = 5 V  10%, GND = 0 V. All specifications T

B Version

MIN

to T

unless otherwise noted.)

MAX

–40C to –40C to

Parameter +25C +85C +125C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDDV On Resistance (R

) 2.2 Ω typ VD = 0 V to VDD, IS = –10 mA

57 Ω max

On Resistance Match between

Channels (R

)0.15 Ω typ VD = 0 V to VDD, IS = –10 mA

0.5 0.5 Ω max

On Resistance Flatness (R

FLAT(ON)

) 0.5 Ω typ VD = 0 V to VDD, IS = –1 mA

11 Ω max

LEAKAGE CURRENTS

Source OFF Leakage I

(OFF) ± 0.01 nA typ VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V;

± 0.5 ± 1 ± 1.5 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.01 nA typ VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V;

± 0.5 ± 1 ± 1.5 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA typ VD = VS = 4.5 V; VD = VS = 1 V; Test Circuit 3

± 0.5 ± 1 ± 1.5 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

INL

INH

2.0 V min

0.8 V max

Input Current

INL

or I

INH

0.001 µA typ VIN = V

INL

or V

INH

± 0.5 µA max

DYNAMIC CHARACTERISTICS

OFF

Break-Before-Make Time Delay, t

Off Isolation –65 dB typ R Channel-to-Channel Crosstalk –75 dB typ R Bandwidth –3 dB 240 MHz typ R Distortion 0.5 % typ R Charge Injection 10 pC typ C

(OFF) 10 pF typ f = 1 kHz

(OFF) 20 pF typ f = 1 kHz

7 ns typ RL = 100 Ω, CL = 35 pF, 15 20 ns max V

= +3 V; Test Circuit 4

4 ns typ RL = 100 Ω, CL = 35 pF, 89 ns max V

5 ns typ RL = 100 Ω, CL = 35 pF, 1 ns min V

= +3 V; Test Circuit 4

= VS2 = +5 V; Test Circuit 5

= 100 Ω, f = 10 MHz; Test Circuit 7

= 100 Ω, f = 10 MHz; Test Circuit 8

= 100 Ω; Test Circuit 6

= 100 Ω

= 1 nF; Test Circuit 9

CD, CS (ON) 30 pF typ f = 1 MHz

POWER REQUIREMENTS V

11 µA max

= +5.5 V

Digital Inputs = 0 V or V

0.001 µA typ

NOTES

Temperature range: B Version, –40°C to +125°C.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

11 µA typ VIN = +5 V 100 mA max VS/VD = 0 V

–2–

REV. C

ADG774

www.BDTIC.com/ADI

SINGLE SUPPLY

(VDD = 3 V  10%, GND = 0 V. All specifications T

B Version

MIN

to T

unless otherwise noted.)

MAX

–40C to –40C to

Parameter +25C +85C +125C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V On Resistance (R

)4 Ω typ VD = 0 V to VDD, IS = –10 mA

89 Ω max

On Resistance Match between

Channels (R

)0.15 Ω typ VD = 0 V to VDD, IS = –10 mA

0.5 0.5 Ω max

On Resistance Flatness (R

FLAT(ON)

)2 Ω typ VD = 0 V to VDD, IS = –10 mA

44 Ω max

LEAKAGE CURRENTS

Source OFF Leakage IS (OFF) ± 0.01 nA typ VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V;

± 0.5 ± 1 ± 1.5 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.01 nA typ VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V;

± 0.5 ± 1 ± 1.5 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA typ VD = VS = 3 V; VD = VS = 1 V; Test Circuit 3

± 0.5 ± 1 ± 1.5 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

INL

INH

2.0 V min

0.8 V max

Input Current

INL

or I

INH

0.001 µA typ VIN = V

INL

or V

INH

± 0.5 µA max

DYNAMIC CHARACTERISTICS

OFF

Break-Before-Make Time Delay, t

Off Isolation –65 dB typ R Channel-to-Channel Crosstalk –75 dB typ R Bandwidth –3 dB 240 MHz typ R Distortion 2 % typ R Charge Injection 3 pC typ C

(OFF) 10 pF typ f = 1 kHz

(OFF) 20 pF typ f = 1 kHz

8 ns typ RL = 100 Ω, CL = 35 pF, 16 21 ns max V

= +1.5 V; Test Circuit 4

5 ns typ RL = 100 Ω, CL = 35 pF, 10 11 ns max V

5 ns typ RL = 100 Ω, CL = 35 pF, 1 ns min V

= +1.5 V; Test Circuit 4

= VS2 = 3 V; Test Circuit 5

= 50 Ω, f = 10 MHz; Test Circuit 7

= 50 Ω, f = 10 MHz; Test Circuit 8

= 50 Ω; Test Circuit 6

= 50 Ω

= 1 nF; Test Circuit 9

CD, CS (ON) 30 pF typ f = 1 MHz

POWER REQUIREMENTS V

11 µA max

= +3.3 V

Digital Inputs = 0 V or V

0.001 µA typ

NOTES

Temperature range: B Version, –40°C to +125°C.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

11 µA typ VIN = +3 V 100 mA max VS/VD = 0 V

Table I. Truth Table

EN IN D1 D2 D3 D4 Function

1XHi-Z Hi-Z Hi-Z Hi-Z DISABLE 00S1A S2A S3A S4A IN = 0 01S1B S2B S3B S4B IN = 1

REV. C

–3–

ADG774

www.BDTIC.com/ADI

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted.)

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V

Analog, Digital Inputs

. . . . . . . . . . –0.3 V to VDD + 0.3 V or

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA

(Pulsed at 1 ms, 10% Duty Cycle max)

Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +125°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C

SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 100°C/W



30 mA, Whichever Occurs First

ORDERING GUIDE

QSOP Package, Power Dissipation . . . . . . . . . . . . . . . 566 mW

Thermal Impedance . . . . . . . . . . . . . . . . . . . 149.97°C/W



Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300°C

I R Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . . 235°C

ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV

NOTES

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.

Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be

limited to the maximum ratings given.

Model Temperature Range Package Descriptions Package Options

ADG774BR –40°C to +125°C Standard Small Outline Package (SOIC) R-16 ADG774BR-REEL –40°C to +125°C Standard Small Outline Package (SOIC) R-16 ADG774BR-REEL7 –40°C to +125°C Standard Small Outline Package (SOIC) R-16 ADG774BRZ* –40°C to +125°C Standard Small Outline Package (SOIC) R-16 ADG774BRZ-REEL* –40°C to +125°C Standard Small Outline Package (SOIC) R-16 ADG774BRZ-REEL7* –40°C to +125°C Standard Small Outline Package (SOIC) R-16 ADG774BRQ –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16 ADG774BRQ-REEL –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16 ADG774BRQ-REEL7 –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16 ADG774BRQZ* –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16 ADG774BRQZ-REEL* –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16 ADG774BRQZ-REEL7* –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16

*Z = Pb-free part.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG774 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

–4–

REV. C

+ 8 hidden pages