Analog Devices ADG774 Datasheet

CMOS

a

FEATURES
Low Insertion Loss and On Resistance: 4 ⍀ Typical
On-Resistance Flatness <2 ⍀
Bandwidth >200 MHz
Single 3 V/5 V Supply Operation
Rail-to-Rail Operation
Very Low Distortion: <1%
Low Quiescent Supply Current (100 nA Typical)
Fast Switching Times

t

10 ns

ON

t

4 ns

OFF

TTL/CMOS Compatible

APPLICATIONS
10/100 Base-TX/T4
100VG-AnyLAN
Token Ring 4 Mbps/16 Mbps
ATM25/155
NIC Adapter and Hubs
Audio and Video Switching
Relay Replacement

3 V/5 V, Wide Bandwidth Quad 2:1 Mux

ADG774

FUNCTIONAL BLOCK DIAGRAM

S1A
S1B

S2A
S2B

S3A
S3B

S4A
S4B

ADG774

1 OF 2

DECODER

EN

D1

D2

D3

D4

IN

GENERAL DESCRIPTION

The ADG774 is a monolithic CMOS device comprising four
2:1 multiplexer/demultiplexers with high impedance outputs.
The CMOS process provides low power dissipation yet gives
high switching speed and low on resistance. The on-resistance

variation is typically less than 0.5 Ω with an input signal ranging

from 0 V to 5 V.

The bandwidth of the ADG774 is greater than 200 MHz and
this, coupled with low distortion (typically 0.5%), makes the
part suitable for switching fast ethernet signals.

The on-resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion when switch­ing audio signals. Fast switching speed, coupled with high signal
bandwidth, also makes the parts suitable for video signal switch­ing. CMOS construction ensures ultralow power dissipation
making the parts ideally suited for portable and battery powered
instruments.

The ADG774 operates from a single 3.3 V/5 V supply and is
TTL logic compatible. The control logic for each switch is shown
in the Truth Table.

These switches conduct equally well in both directions when ON,
and have an input signal range that extends to the supplies. In
the OFF condition, signal levels up to the supplies are blocked.
The ADG774 switches exhibit break-before-make switching
action.

PRODUCT HIGHLIGHTS

1. Wide bandwidth data rates >200 MHz.

2. Ultralow Power Dissipation.

3. Extended Signal Range.
The ADG774 is fabricated on a CMOS process giving an
increased signal range that fully extends to the supply rails.

4. Low leakage over temperature.

5. Break-Before-Make Switching.
This prevents channel shorting when the switches are config­ured as a multiplexer.

6. Crosstalk is typically –70 dB @ 30 MHz.

7. Off isolation is typically –60 dB @ 10 MHz.

REV. 0

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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

ADG774–SPECIFICATIONS

SINGLE SUPPLY

(VDD = +5 V ⴞ 10%, GND = 0 V. All specifications T

MIN

to T

unless otherwise noted.)

MAX

B Version

to

T

Parameter +25ⴗCT

MIN

MAX

Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

) 2.2 Ω typ V

ON

DD

V

= 0 V to VDD, IS = –10 mA

D

5 Ω max

On Resistance Match Between

Channels (∆R

)0.15 Ω typ V

ON

= 0 V to VDD, IS = –10 mA

D

0.5 Ω max

On Resistance Flatness (R

FLAT(ON)

) 0.5 Ω typ V

= 0 V to VDD; IS = –1 mA

D

1 Ω max

LEAKAGE CURRENTS

Source OFF Leakage I

(OFF) ±0.01 nA typ V

S

= 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V;

D

±0.5 ±1 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.01 nA typ V

D

= 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V;

D

±0.5 ±1 nA max Test Circuit 2

Channel ON Leakage I

(ON) ±0.01 nA typ V

D

S

= VS = 4.5 V; VD = VS = 1 V; Test Circuit 3

D

, I

±0.5 ±1 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

0.001 µA typ V

IN

= V

±0.5 µA max

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Off Isolation –65 dB typ R
Channel-to-Channel Crosstalk –75 dB typ R
Bandwidth –3 dB 240 MHz typ R
Distortion 0.5 % typ R
Charge Injection 10 pC typ C

(OFF) 10 pF typ f = 1 kHz

C

S

(OFF) 20 pF typ f = 1 kHz

C

D

2

10 ns typ R
20 ns max V
4 ns typ R
8 ns max V

D

5 ns typ R
1 ns min V

= 100 Ω, C

L

= +3 V; Test Circuit 4

S

= 100 Ω, C

L

= +3 V; Test Circuit 4

S

= 100 Ω, C

L

= VS2 = +5 V; Test Circuit 5

S1

= 100 Ω, f = 10 MHz; Test Circuit 7

L

= 100 Ω, f = 10 MHz; Test Circuit 8

L

= 100 Ω; Test Circuit 6

L

= 100 Ω

L

= 1 nF; Test Circuit 9

L

CD, CS (ON) 30 pF typ f = 1 MHz

POWER REQUIREMENTS V

= +5.5 V

DD

Digital Inputs = 0 V or V

I

DD

1 µA max

0.001 µA typ

I

IN

I

O

NOTES

1

Temperature ranges are as follows: B Version, –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

1 µA typ V

100 mA max VS/VD = 0 V

= +5 V

IN

INL

or V

INH

= 35 pF,

L

= 35 pF,

L

= 35 pF,

L

DD

–2– REV. 0

ADG774

SINGLE SUPPLY

(VDD = +3 V ⴞ 10%, GND = 0 V. All specifications T

MIN

to T

unless otherwise noted.)

MAX

B Version

to

T

Parameter +25ⴗCT

MIN

MAX

Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

)4 Ω typ V

ON

DD

V

= 0 V to VDD, IS = –10 mA

D

8 Ω max

On Resistance Match Between

Channels (∆R

)0.15 Ω typ V

ON

= 0 V to VDD, IS = –10 mA

D

0.5 Ω max

On Resistance Flatness (R

FLAT(ON)

) 2Ω typ V

= 0 V to VDD, IS = –10 mA

D

4 Ω max

LEAKAGE CURRENTS

Source OFF Leakage I

(OFF) ±0.01 nA typ V

S

= 3 V, VS = 1 V; VD = 1 V, VS = 3 V;

D

±0.5 ±1 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.01 nA typ V

D

= 3 V, VS = 1 V; VD = 1 V, VS = 3 V;

D

±0.5 ±1 nA max Test Circuit 2

Channel ON Leakage I

(ON) ±0.01 nA typ V

D

S

= VS = 3 V; VD = VS = 1 V; Test Circuit 3

D

, I

±0.5 ±1 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.0 V min

0.4 V max

Input Current

I

INL

or I

INH

0.001 µA typ V

IN

= V

±0.5 µA max

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Off Isolation –65 dB typ R
Channel-to-Channel Crosstalk –75 dB typ R
Bandwidth –3 dB 240 MHz typ R
Distortion 2 % typ R
Charge Injection 3 pC typ C

(OFF) 10 pF typ f = 1 kHz

C

S

(OFF) 20 pF typ f = 1 kHz

C

D

2

12 ns typ R
25 ns max V
5 ns typ R
10 ns max V

D

5 ns typ R
1 ns min V

= 100 Ω, C

L

= +1.5 V; Test Circuit 4

S

= 100 Ω, C

L

= +1.5 V; Test Circuit 4

S

= 100 Ω, C

L

= VS2 = 3 V; Test Circuit 5

S1

= 50 Ω, f = 10 MHz; Test Circuit 7

L

= 50 Ω, f = 10 MHz; Test Circuit 8

L

= 50 Ω; Test Circuit 6

L

= 50 Ω

L

= 1 nF; Test Circuit 9

L

CD, CS (ON) 30 pF typ f = 1 MHz

POWER REQUIREMENTS V

DD

Digital Inputs = 0 V or V

I

DD

1 µA max

0.001 µA typ

I

IN

I

O

NOTES

1

Temperature ranges are as follows: B Version, –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

1 µA typ V

100 mA max VS/VD = 0 V

= +3 V

IN

or V

INL

= +3.3 V

INH

= 35 pF,

L

= 35 pF,

L

= 35 pF,

L

DD

Table I. Truth Table

EN IN D1 D2 D3 D4 Function

1 X Hi-Z Hi-Z Hi-Z Hi-Z DISABLE
0 0 S1A S2A S3A S4A IN = 0
0 1 S1B S2B S3B S4B IN = 1

–3–REV. 0