Analog Devices ADG758 9 a Datasheet

3 , 4-/8-Channel Multiplexers

a

FEATURES

1.8 V to 5.5 V Single Supply
2.5 V Dual Supply
3  ON Resistance

0.75  ON Resistance Flatness
100 pA Leakage Currents
14 ns Switching Times
Single 8-to-1 Multiplexer ADG758
Differential 4-to-1 Multiplexer ADG759
20-Lead 4 mm  4 mm Chip Scale Package
Low Power Consumption
TTL-/CMOS-Compatible Inputs
For Functionally Equivalent Devices in 16-Lead TSSOP

Package, See ADG708/ADG709

APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems

in Chip Scale Package

ADG758/ADG759

FUNCTIONAL BLOCK DIAGRAMS

ADG758

S1

S8

1 OF 8

DECODER

A0DA1 A2

EN

S1A

S4A

S1B

S4B

ADG759

1 OF 4

DECODER

A0

A1

DA

DB

EN

GENERAL DESCRIPTION

The ADG758 and ADG759 are low voltage, CMOS analog
multiplexers comprising eight single channels and four differential
channels, respectively. The ADG758 switches one of eight inputs
(S1–S8) to a common output, D, as determined by the 3-bit
binary address lines A0, A1, and A2. The ADG759 switches one
of four differential inputs to a common differential output as
determined by the 2-bit binary address lines A0 and A1. An EN
input on both devices is used to enable or disable the device. When
disabled, all channels are switched OFF.

Low power consumption and an operating supply range of 1.8 V to

5.5 V make the ADG758 and ADG759 ideal for battery-powered,
portable instruments. All channels exhibit break-before-make
switching action preventing momentary shorting when switch­ing channels.

These switches are designed on an enhanced submicron process
that provides low power dissipation yet gives high switching
speed, very low ON resistance and leakage currents. ON resistance
is in the region of a few ohms and is closely matched between
switches and very flat over the full signal range. These parts can
operate equally well as either multiplexers or demultiplexers
and have an input signal range that extends to the supplies.

The ADG758 and ADG759 are available in 20-lead chip
scale packages.

PRODUCT HIGHLIGHTS

1. Small 20-Lead 4 mm × 4 mm Chip Scale Packages (CSP).

2. Single/Dual Supply Operation. The ADG758 and ADG759
are fully specified and guaranteed with 3 V and 5 V single­supply and ±2.5 V dual-supply rails.

3. Low R

(3 Ω Typical).

ON

4. Low Power Consumption (<0.01 µW).

5. Guaranteed Break-Before-Make Switching Action.

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone]www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

1

ADG758/ADG759–SPECIFICATIONS

B Version

–40C

Parameter +25C to +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
ON Resistance (R

ON Resistance Match Between 0.4 Ω typ

Channels (∆R

ON Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

t

(EN) 14 ns typ RL = 300 Ω, CL = 35 pF

ON

(EN) 7 ns typ RL = 300 Ω, CL = 35 pF

t

OFF

Charge Injection ± 3pC typ V

Off Isolation –60 dB typ R

Channel-to-Channel Crosstalk –60 dB typ R

–3 dB Bandwidth 55 MHz typ R
C

(OFF) 13 pF typ f = 1 MHz

S

(OFF)

C

D

ADG758 85 pF typ f = 1 MHz
ADG759 42 pF typ f = 1 MHz

, CS (ON)

C

D

ADG758 96 pF typ f = 1 MHz
ADG759 48 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature range is as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)3 Ω typ VS = 0 V to VDD, IDS = 10 mA;

ON

4.5 5 Ω max Test Circuit 1

) 0.8 Ω max VS = 0 V to VDD, IDS = 10 mA

ON

FLAT(ON)

)0.75 Ω typ VS = 0 V to VDD, IDS = 10 mA

1.2 Ω max

(OFF) ±0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;

S

± 0.1 ±0.3 nA max Test Circuit 2

(OFF) ± 0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;

D

± 0.1 ±0.75 nA max Test Circuit 3

, IS (ON) ± 0.01 nA typ VD = VS = 1 V, or 4.5 V, Test Circuit 4

D

± 0.1 ±0.75 nA max

INH

INL

2.4 V min

0.8 V max

0.005 µA typ VIN = V
± 0.1 µA max

2

14 ns typ RL = 300 Ω, CL = 35 pF; Test Circuit 5

25 ns max V

8 ns typ RL = 300 Ω, CL = 35 pF

D

1 ns min V

25 ns max V

12 ns max V

–80 dB typ R

–80 dB typ R

0.001 µA typ Digital Inputs = 0 V or 5.5 V

1.0 µA max

(VDD = 5 V  10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)

DD

V

= 5.5 V

DD

or V

INL

= 3 V/0 V, VS8 = 0 V/3 V

S1

= 3 V; Test Circuit 6

S

= 3 V; Test Circuit 7

S

= 3 V; Test Circuit 7

S

= 2.5 V, RS = 0 Ω, CL = 1 nF;

S

INH

Test Circuit 8

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 10

= 50 Ω, CL = 5 pF; Test Circuit 11

L

= 5.5 V

DD

–2–

REV. A

ADG758/ADG759

1

SPECIFICATIONS

Parameter +25C to +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
ON Resistance (R

ON Resistance Match Between 0.4 Ω typ V

Channels (∆RON) 1.2 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

t

(EN) 18 ns typ RL = 300 Ω, CL = 35 pF

ON

t

(EN) 8 ns typ RL = 300 Ω, CL = 35 pF

OFF

Charge Injection ± 3pC typ V

Off Isolation –60 dB typ R

Channel-to-Channel Crosstalk –60 dB typ R

–3 dB Bandwidth 55 MHz typ R

(OFF) 13 pF typ f = 1 MHz

C

S

C

(OFF)

D

ADG758 85 pF typ f = 1 MHz
ADG759 42 pF typ f = 1 MHz

, CS (ON)

C

D

ADG758 96 pF typ f = 1 MHz
ADG759 48 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)8 Ω typ VS = 0 V to VDD, IDS = 10 mA;

ON

(OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

S

(OFF) ± 0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

D

, IS (ON) ± 0.01 nA typ VS = VD = 1 V or 3 V; Test Circuit 4

D

INH

INL

(VDD = 3 V  10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)

B Version

–40C

DD

V

11 12 Ω max Test Circuit 1

± 0.1 ±0.3 nA max Test Circuit 2

± 0.1 ±0.75 nA max Test Circuit 3

± 0.1 ±0.75 nA max

2.0 V min

0.8 V max

0.005 µA typ VIN = V
± 0.1 µA max

2

18 ns typ RL = 300 Ω, CL = 35 pF; Test Circuit 5

30 ns max V

D

8 ns typ RL = 300 Ω, CL = 35 pF

1 ns min V

30 ns max V

15 ns max V

Test Circuit 8

–80 dB typ R

Test Circuit 9

–80 dB typ R

Test Circuit 10

0.001 µA typ Digital Inputs = 0 V or 3.3 V

1.0 µA max

= 0 V to VDD, IDS = 10 mA

S

= 3.3 V

DD

or V

INL

= 2 V/0 V, VS2 = 0 V/2 V

S1

= 2 V; Test Circuit 6

S

= 2 V; Test Circuit 7

S

= 2 V; Test Circuit 7

S

= 1.5 V, RS = 0 Ω, CL = 1 nF;

S

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

= 50 Ω, CL = 5 pF; Test Circuit 11

L

= 3.3 V

DD

INH

REV. A

–3–

ADG758/ADG759–SPECIFICATIONS

1

DUAL SUPPLY

(VDD = +2.5 V  10%, VSS = –2.5 V  10%, GND = 0 V, unless otherwise noted.)

B Version

–40C

Parameter +25C to +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range V
ON Resistance (R

) 2.5 Ω typ VS = VSS to VDD, IDS = 10 mA;

ON

SS

to V

DD

V

4.5 5 Ω max Test Circuit 1

ON Resistance Match Between 0.4 Ω typ

Channels (∆R

ON Resistance Flatness (R

) 0.8 Ω max VS = VSS to VDD, IDS = 10 mA

ON

FLAT(ON)

) 0.6 Ω typ VS = VSS to VDD, IDS = 10 mA

1.0 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.01 nA typ VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;

S

= +2.75 V, VSS = –2.75 V

DD

± 0.1 ±0.3 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.01 nA typ VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;

D

± 0.1 ±0.75 nA max Test Circuit 3

Channel ON Leakage I

, IS (ON) ± 0.01 nA typ VS = VD = +2.25 V/–1.25 V; Test Circuit 4

D

± 0.1 ±0.75 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

1.7 V min

0.7 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

± 0.1 µA max

CIN, Digital Input Capacitance 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

t

(EN) 14 ns typ RL = 300 Ω, CL = 35 pF

ON

t

(EN) 8 ns typ RL = 300 Ω, CL = 35 pF

OFF

Charge Injection ± 3pC typ V

2

14 ns typ RL = 300 Ω, CL = 35 pF; Test Circuit 5

25 ns max V

D

8 ns typ RL = 300 Ω, CL = 35 pF

1 ns min V

25 ns max V

15 ns max V

= 1.5 V/0 V; Test Circuit 5

S

= 1.5 V; Test Circuit 6

S

= 1.5 V; Test Circuit 7

S

= 1.5 V; Test Circuit 7

S

= 0 V, RS = 0 Ω, CL = 1 nF;

S

Test Circuit 8

Off Isolation –60 dB typ R

–80 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9

Channel-to-Channel Crosstalk –60 dB typ R

–80 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 10

–3 dB Bandwidth 55 MHz typ R

(OFF) 13 pF typ f = 1 MHz

C

S

(OFF)

C

D

= 50 Ω, CL = 5 pF; Test Circuit 11

L

ADG758 85 pF typ f = 1 MHz
ADG759 42 pF typ f = 1 MHz

C

, CS (ON)

D

ADG758 96 pF typ f = 1 MHz
ADG759 48 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

0.001 µA typ Digital Inputs = 0 V or 2.75 V

= +2.75 V

DD

1.0 µA max

I

SS

0.001 µA typ VSS = –2.75 V

1.0 µA max Digital Inputs = 0 V or 2.75 V

NOTES

1

Temperature range is as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–4–

REV. A