Analog Devices ADG752 Datasheet

CMOS, Low Voltage

a

FEATURES
High Off Isolation –80 dB at 30 MHz
–3 dB Signal Bandwidth 250 MHz
+1.8 V to +5.5 V Single Supply
Low On-Resistance (15 ⍀ Typically)
Low On-Resistance Flatness
Fast Switching Times

t

Typically 8 ns

ON

t

Typically 3 ns

OFF

Typical Power Consumption < 0.01 ␮W
TTL/CMOS Compatible

APPLICATIONS
Audio and Video Switching
RF Switching
Networking Applications
Battery Powered Systems
Communication Systems
Relay Replacement
Sample-and-Hold Systems

RF/ Video, SPDT Switch

ADG752

FUNCTIONAL BLOCK DIAGRAM

ADG752

S1

D

S2

IN

SWITCH SHOWN FOR A LOGIC "1" INPUT

GENERAL DESCRIPTION

The ADG752 is a low voltage SPDT (single pole, double throw)
switch. It is constructed using switches in a T-switch configura­tion, which results in excellent Off Isolation while maintaining
good frequency response in the ON condition.

High off isolation and wide signal bandwidth make this part
suitable for switching RF and video signals. Low power con­sumption and operating supply range of +1.8 V to +5.5 V make
it ideal for battery powered, portable instruments.

The ADG752 is designed on a submicron process that provides
low power dissipation yet gives high switching speed and low on
resistance. This part is a fully bidirectional switch and can handle
signals up to and including the supply rails. Break-before-make
switching action ensures the input signals are protected against
momentary shorting when switching between channels.

The ADG752 is available in 6-lead SOT-23 and 8-lead µSOIC

packages.

PRODUCT HIGHLIGHTS

1. High Off Isolation –80 dB at 30 MHz.

2. –3 dB Signal Bandwidth 250 MHz.

3. Low On Resistance (15 Ω).

4. Low Power Consumption, typically <0.01 µW.

5. Break-Before-Make Switching Action.

6. Tiny 6-lead SOT-23 and 8-lead µSOIC packages.

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
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Fax: [phone] © Analog Devices, Inc., 1999

ADG752–SPECIFICATIONS

(VDD = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted.)

B Version

–40ⴗC

Parameter +25ⴗC to +85ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

)15 Ω typ V

ON

DD

V

= 0 V to VDD, IDS = 10 mA;

S

18 20 Ω max Test Circuit 1

On-Resistance Match Between 0.1 Ω typ V

Channels (∆R

On-Resistance Flatness (R

) 0.6 0.6 Ω max

ON

FLAT(ON)

)2 Ω typ V

3 Ω max V

= 0 V to VDD, IDS = 10 mA

S

= 0 V to 2.5 V, IDS = 10 mA

S

= + 4.5 V

DD

LEAKAGE CURRENTS

Source OFF Leakage I

(OFF) ±0.01 nA typ V

S

= 4.5 V/1 V, VS = 1 V/4.5 V;

D

±0.25 ±3.0 nA max Test Circuit 2

Channel ON Leakage I

(ON) ±0.01 nA typ V

D

S

= VS = 1 V, or 4.5 V;

D

, I

±0.25 ±3.0 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

0.001 µA typ V

IN

= V

INL

or V

INH

±0.5 µA max

CIN, Digital Input Capacitance 2 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay 6 ns typ R

Off Isolation –80 dB typ R

1

8 ns typ R

13 ns max V

3 ns typ R

5 ns max V

1 ns min V

= 300 Ω, C

L

= 3 V, Test Circuit 4

S

= 300 Ω, C

L

= 3 V, Test Circuit 4

S

= 300 Ω, C

L

= 3 V, Test Circuit 5

S

= 50 Ω, C

L

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 5 pF, f = 30 MHz;

L

Test Circuit 6

Crosstalk –80 dB typ R

= 50 Ω, C

L

= 5 pF, f = 30 MHz;

L

Test Circuit 7

–3 dB Bandwidth 250 MHz typ R

(OFF) 4 pF typ

C

S

= 50 Ω, C

L

= 5 pF, Test Circuit 8

L

CD, CS (ON) 15 pF typ

POWER REQUIREMENTS V

I

DD

0.001 µA typ Digital Inputs = 0 V or +5.5 V

= +5.5 V

DD

0.1 0.5 µA max

NOTES

1

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

REV. 0–2–

SPECIFICATIONS

(VDD = +3 V ⴞ 10%, GND = 0 V, unless otherwise noted.)

ADG752

B Version

–40ⴗC

Parameter +25ⴗC to +85ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

)35 Ω typ V

ON

DD

V

= 0 V to VDD, IDS = 10 mA;

S

50 Ω max Test Circuit 1

On-Resistance Match Between 0.2 Ω typ V

Channels (∆R

) 2.5 2.5 Ω max

ON

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.01 nA typ V

S

= 0 V to VDD, IDS = 10 mA

S

= +3.3 V

DD

= 3 V/1 V, VD = 1 V/3 V;

S

±0.25 ±3.0 nA max Test Circuit 2

Channel ON Leakage I

(ON) ±0.01 nA typ V

D

S

= VD = 1 V or 3 V;

S

, I

±0.25 ±3.0 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.0 V min

0.4 V max

Input Current

I

INL

or I

INH

0.001 µA typ V

IN

= V

INL

or V

INH

±0.5 µA max

CIN, Digital Input Capacitance 2 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay 6 ns typ R

Off Isolation –80 dB typ R

1

10 ns typ R

18 ns max V

4 ns typ R

8 ns max V

1 ns min V

= 300 Ω, C

L

= 2 V, Test Circuit 4

S

= 300 Ω, C

L

= 2 V, Test Circuit 4

S

= 300 Ω, C

L

= 2 V, Test Circuit 5

S

= 50 Ω, C

L

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 5 pF, f = 30 MHz;

L

Test Circuit 6

Crosstalk –80 dB typ R

= 50 Ω, C

L

= 5 pF, f = 30 MHz;

L

Test Circuit 7

–3 dB Bandwidth 250 MHz typ R

(OFF) 4 pF typ

C

S

= 50 Ω, C

L

= 5 pF, Test Circuit 8

L

CD, CS (ON) 15 pF typ

POWER REQUIREMENTS V

I

DD

0.001 µA typ Digital Inputs = 0 V or +3.3 V

= +3.3 V

DD

0.1 0.5 µA max

NOTES

1

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

REV. 0 –3–