Analog Devices ADG751 Datasheet

CMOS, Low Voltage

D

IN

S

ADG751

SWITCH SHOWN FOR A LOGIC "1" INPUT

a

FEATURES
High Off Isolation –75 dB at 100 MHz
–3 dB Signal Bandwidth 300 MHz
+1.8 V to +5.5 V Single Supply
Low On-Resistance (15 ⍀)
Fast Switching Times

t

Typically 9 ns

ON

t

Typically 3 ns

OFF

Typical Power Consumption <0.01 ␮W
TTL/CMOS Compatible

APPLICATIONS
Audio and Video Switching
RF Switching
Networking Applications
Battery Powered Systems
Communication Systems
Relay Replacement
Sample-and-Hold Systems

RF/Video, SPST Switch

ADG751

FUNCTIONAL BLOCK DIAGRAM

GENERAL DESCRIPTION

The ADG751 is a low voltage SPST (single pole, single throw)
switch. It is constructed in a T-switch configuration, which
results in excellent Off Isolation while maintaining good fre­quency response in the ON condition.

High off isolation and wide signal bandwidth make this part
suitable for switching RF and video signals. Low power con­sumption and operating supply range of +1.8 V to +5.5 V make
it ideal for battery powered, portable instruments.

The ADG751 is designed on a submicron process that provides
low power dissipation yet gives high switching speed and low on
resistance. This part is a fully bidirectional switch and can handle
signals up to and including the supply rails.

The ADG751 is available in 6-lead SOT-23 and 8-lead µSOIC

packages.

PRODUCT HIGHLIGHTS

1. High Off Isolation –75 dB at 100 MHz.

2. –3 dB Signal Bandwidth 300 MHz.

3. Low On-Resistance (15 Ω).

4. Low Power Consumption, typically <0.01 µW.

5. Tiny 6-lead SOT-23 and 8-lead µSOIC packages.

REV. 0

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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
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Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

ADG751–SPECIFICATIONS

(VDD = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted.)

B Grade A Grade

–40ⴗC to –40ⴗC to

Parameter +25ⴗC +85ⴗC +25ⴗC +85ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

)28 15 Ω typ V

ON

DD

0 V to V

DD

V

= 0 V to VDD, IDS = 10 mA;

S

35 40 18 20 Ω max Test Circuit 1

On-Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.01 ±0.01 nA typ V

S

)3 2 Ω typ V

FLAT(ON)

53Ω max V

= 0 V to 2.5 V, IDS = 10 mA

S

= 4.5 V

DD

= +5.5 V

DD

= 4.5 V/1 V, VS = 1 V/4.5 V;

D

±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.01 ±0.01 nA typ V

D

= 4.5 V/1 V, VS = 1 V/4.5 V;

D

±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 2

Channel ON Leakage I

, I

(ON) ±0.01 ±0.01 nA typ V

D

S

= VS = 1 V, or 4.5 V;

D

±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 2.4 V min

0.8 0.8 V max

Input Current

I

INL

or I

INH

0.001 0.001 µA typ V

IN

= V

INL

or V

INH

±0.5 ±0.5 µA max

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Charge Injection 1 1 pC typ V

1

9 9 ns typ R

13 13 ns max V

3 3 ns typ R

5 5 ns max V

= 300 Ω, C

L

= 3 V, Test Circuit 4

S

= 300 Ω, C

L

= 3 V, Test Circuit 4

S

= 1 V, R

S

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

S

= 1.0 nF;

L

Test Circuit 5

Off Isolation –75 –65 dB typ R

= 50 Ω, C

L

= 5 pF, f = 100 MHz;

L

Test Circuit 6
–3 dB Bandwidth 180 300 MHz typ R
C

(OFF) 4 4 pF typ

S

C

(OFF) 4 4 pF typ

D

= 50 Ω, C

L

= 5 pF, Test Circuit 7

L

CD, CS (ON) 26 15 pF typ

POWER REQUIREMENTS V

I

DD

0.001 0.001 µA typ Digital Inputs = 0 V or +5.5 V

= +5.5 V

DD

0.1 0.5 0.1 0.5 µA max

NOTES

1

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

REV. 0–2–

ADG751

SPECIFICATIONS

Parameter +25ⴗC +85ⴗC +25ⴗC +85ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

I

or I

INL

INH

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Charge Injection 1 1 pC typ V

Off Isolation –75 –65 dB typ R

–3 dB Bandwidth 180 280 MHz typ R
C

(OFF) 4 4 pF typ

S

C

(OFF) 4 4 pF typ

D

CD, CS (ON) 26 15 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)60 35 Ω typ V

ON

(OFF) ±0.01 ±0.01 nA typ V

S

(OFF) ±0.01 ±0.01 nA typ V

D

, I

D

INH

INL

(VDD = +3 V ⴞ 10%, GND = 0 V, unless otherwise noted.)

B Grade A Grade

–40ⴗC to –40ⴗC to

DD

0 V to V

90 50 Ω max Test Circuit 1

±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 2
±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 2

(ON) ±0.01 ±0.01 nA typ V

S

±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 3

2.0 2.0 V min

0.4 0.4 V max

0.001 0.001 µA typ V
±0.5 ±0.5 µA max

1

12 12 ns typ R

19 19 ns max V

4 4 ns typ R

6 6 ns max V

0.001 0.001 µA typ Digital Inputs = 0 V or +3.3 V

0.1 0.5 0.1 0.5 µA max

DD

V

= 0 V to VDD, IDS = –10 mA;

S

= +3.3 V

DD

= 3 V/1 V, VS = 1 V/3 V;

D

= 1 V/3 V, VS = 3 V/1 V;

D

= VS = 1 V, or 3 V;

D

= V

IN

L

= 2 V, Test Circuit 4

S

L

= 2 V, Test Circuit 4

S

= 1 V, R

S

or V

INL

= 300 Ω, C
= 300 Ω, C

= 0 Ω, C

S

INH

= 35 pF;

L

= 35 pF;

L

= 1.0 nF;

L

Test Circuit 5

= 50 Ω, C

L

= 5 pF, f = 100 MHz;

L

Test Circuit 6

= 50 Ω, C

L

= +3.3 V

DD

= 5 pF, Test Circuit 7

L

REV. 0 –3–