Analog Devices ADG751 Datasheet

CMOS, Low Voltage

D

IN

S

ADG751

SWITCH SHOWN FOR A LOGIC "1" INPUT

a

FEATURES
High Off Isolation –75 dB at 100 MHz
–3 dB Signal Bandwidth 300 MHz
+1.8 V to +5.5 V Single Supply
Low On-Resistance (15 ⍀)
Fast Switching Times

t

Typically 9 ns

ON

t

Typically 3 ns

OFF

Typical Power Consumption <0.01 ␮W
TTL/CMOS Compatible

APPLICATIONS
Audio and Video Switching
RF Switching
Networking Applications
Battery Powered Systems
Communication Systems
Relay Replacement
Sample-and-Hold Systems

RF/Video, SPST Switch

ADG751

FUNCTIONAL BLOCK DIAGRAM

GENERAL DESCRIPTION

The ADG751 is a low voltage SPST (single pole, single throw)
switch. It is constructed in a T-switch configuration, which
results in excellent Off Isolation while maintaining good fre­quency response in the ON condition.

High off isolation and wide signal bandwidth make this part
suitable for switching RF and video signals. Low power con­sumption and operating supply range of +1.8 V to +5.5 V make
it ideal for battery powered, portable instruments.

The ADG751 is designed on a submicron process that provides
low power dissipation yet gives high switching speed and low on
resistance. This part is a fully bidirectional switch and can handle
signals up to and including the supply rails.

The ADG751 is available in 6-lead SOT-23 and 8-lead µSOIC

packages.

PRODUCT HIGHLIGHTS

1. High Off Isolation –75 dB at 100 MHz.

2. –3 dB Signal Bandwidth 300 MHz.

3. Low On-Resistance (15 Ω).

4. Low Power Consumption, typically <0.01 µW.

5. Tiny 6-lead SOT-23 and 8-lead µSOIC packages.

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

ADG751–SPECIFICATIONS

(VDD = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted.)

B Grade A Grade

–40ⴗC to –40ⴗC to

Parameter +25ⴗC +85ⴗC +25ⴗC +85ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

)28 15 Ω typ V

ON

DD

0 V to V

DD

V

= 0 V to VDD, IDS = 10 mA;

S

35 40 18 20 Ω max Test Circuit 1

On-Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.01 ±0.01 nA typ V

S

)3 2 Ω typ V

FLAT(ON)

53Ω max V

= 0 V to 2.5 V, IDS = 10 mA

S

= 4.5 V

DD

= +5.5 V

DD

= 4.5 V/1 V, VS = 1 V/4.5 V;

D

±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.01 ±0.01 nA typ V

D

= 4.5 V/1 V, VS = 1 V/4.5 V;

D

±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 2

Channel ON Leakage I

, I

(ON) ±0.01 ±0.01 nA typ V

D

S

= VS = 1 V, or 4.5 V;

D

±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 2.4 V min

0.8 0.8 V max

Input Current

I

INL

or I

INH

0.001 0.001 µA typ V

IN

= V

INL

or V

INH

±0.5 ±0.5 µA max

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Charge Injection 1 1 pC typ V

1

9 9 ns typ R

13 13 ns max V

3 3 ns typ R

5 5 ns max V

= 300 Ω, C

L

= 3 V, Test Circuit 4

S

= 300 Ω, C

L

= 3 V, Test Circuit 4

S

= 1 V, R

S

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

S

= 1.0 nF;

L

Test Circuit 5

Off Isolation –75 –65 dB typ R

= 50 Ω, C

L

= 5 pF, f = 100 MHz;

L

Test Circuit 6
–3 dB Bandwidth 180 300 MHz typ R
C

(OFF) 4 4 pF typ

S

C

(OFF) 4 4 pF typ

D

= 50 Ω, C

L

= 5 pF, Test Circuit 7

L

CD, CS (ON) 26 15 pF typ

POWER REQUIREMENTS V

I

DD

0.001 0.001 µA typ Digital Inputs = 0 V or +5.5 V

= +5.5 V

DD

0.1 0.5 0.1 0.5 µA max

NOTES

1

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

REV. 0–2–

ADG751

SPECIFICATIONS

Parameter +25ⴗC +85ⴗC +25ⴗC +85ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

I

or I

INL

INH

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Charge Injection 1 1 pC typ V

Off Isolation –75 –65 dB typ R

–3 dB Bandwidth 180 280 MHz typ R
C

(OFF) 4 4 pF typ

S

C

(OFF) 4 4 pF typ

D

CD, CS (ON) 26 15 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)60 35 Ω typ V

ON

(OFF) ±0.01 ±0.01 nA typ V

S

(OFF) ±0.01 ±0.01 nA typ V

D

, I

D

INH

INL

(VDD = +3 V ⴞ 10%, GND = 0 V, unless otherwise noted.)

B Grade A Grade

–40ⴗC to –40ⴗC to

DD

0 V to V

90 50 Ω max Test Circuit 1

±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 2
±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 2

(ON) ±0.01 ±0.01 nA typ V

S

±0.25 ±3.0 ±0.25 ±3.0 nA max Test Circuit 3

2.0 2.0 V min

0.4 0.4 V max

0.001 0.001 µA typ V
±0.5 ±0.5 µA max

1

12 12 ns typ R

19 19 ns max V

4 4 ns typ R

6 6 ns max V

0.001 0.001 µA typ Digital Inputs = 0 V or +3.3 V

0.1 0.5 0.1 0.5 µA max

DD

V

= 0 V to VDD, IDS = –10 mA;

S

= +3.3 V

DD

= 3 V/1 V, VS = 1 V/3 V;

D

= 1 V/3 V, VS = 3 V/1 V;

D

= VS = 1 V, or 3 V;

D

= V

IN

L

= 2 V, Test Circuit 4

S

L

= 2 V, Test Circuit 4

S

= 1 V, R

S

or V

INL

= 300 Ω, C
= 300 Ω, C

= 0 Ω, C

S

INH

= 35 pF;

L

= 35 pF;

L

= 1.0 nF;

L

Test Circuit 5

= 50 Ω, C

L

= 5 pF, f = 100 MHz;

L

Test Circuit 6

= 50 Ω, C

L

= +3.3 V

DD

= 5 pF, Test Circuit 7

L

REV. 0 –3–

ADG751

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

(T

= +25°C unless otherwise noted)

A

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V

Analog, Digital Inputs

2

. . . . . . . . . . . –0.3 V to VDD +0.3 V or

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA

(Pulsed at 1 ms, 10% Duty Cycle Max)

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Operating Temperature Range

Industrial (A, B Versions) . . . . . . . . . . . . . . –40°C to +85°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature (T

Max) . . . . . . . . . . . . . . . . . .+150°C

J

Power Dissipation . . . . . . . . . . . . . . . . . . . . (T

µSOIC Package

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W

θ

JA

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W

θ

JC

1

30 mA, Whichever Occurs First

Max–TA)/θ

J

JA

SOT-23 Package

Thermal Impedance . . . . . . . . . . . . . . . . . . . . 229.6°C/W

θ

JA

Thermal Impedance . . . . . . . . . . . . . . . . . . . . 91.99°C/W

θ

JC

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.

2

Overvoltages at IN, S or D will be clamped by internal diodes. Current should be

limited to the maximum ratings given.

ORDERING GUIDE

Model Temperature Range Brand* Package Descriptions Package Options

ADG751BRM –40°C to +85°C SDB µSOIC RM-8
ADG751BRT –40°C to +85°C SDB SOT-23 RT-6
ADG751ARM –40°C to +85°C SDA µSOIC RM-8
ADG751ART –40°C to +85°C SDA SOT-23 RT-6

*Brand on these packages is limited to three characters due to space constraints.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG751 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–4–

REV. 0

ADG751

PIN CONFIGURATIONS

8-Lead ␮SOIC

(RM-8)

1

NC

2

S

(Not to Scale)

3

GND

4

IN

NC = NO CONNECT

ADG751

TOP VIEW

8

V

DD

D

7

NC

6

NC

5

6-Lead SOT-23

(RT-6)

1

S

ADG751

V

2

DD

TOP VIEW

(Not to Scale)

3

NC

NC = NO CONNECT

6

D
GND

5

IN

4

TERMINOLOGY

V

DD

Most positive power supply potential.
GND Ground (0 V) reference.
S Source terminal. May be an input or output.
D Drain terminal. May be an input or output.
IN Logic control input.
R

ON

R

FLAT(ON)

Ohmic resistance between D and S.

Flatness is defined as the difference between

the maximum and minimum value of on resis-

tance as measured over the specified analog

signal range.
I

(OFF) Source leakage current with the switch “OFF.”

S

I

(OFF) Drain leakage current with the switch “OFF.”

D

I

, IS (ON) Channel leakage current with the switch “ON.”

D

V

) Analog voltage on terminals D and S.

D (VS

C

(OFF) “OFF” switch source capacitance.

S

C

(OFF) “OFF” switch drain capacitance.

D

C

, CS (ON) “ON” switch capacitance.

D

t

ON

Delay between applying the digital control

input and the output switching on. See Test

Circuit 4.
t

OFF

Delay between applying the digital control

input and the output switching off.
Off Isolation A measure of unwanted signal coupling

through an “OFF” switch.
Charge A measure of the glitch impulse transferred from

Injection the digital input to the analog output during

switching.

Bandwidth The frequency at which the output is attenu-

ated by –3 dBs.
On Response The frequency response of the “ON” switch.

Insertion Loss Loss due to the ON resistance of the switch.

V

INL

V

INH

I

INL(IINH

I

DD

) Input current of the digital input.

Maximum input voltage for Logic “0.”

Minimum input voltage for Logic “1.”

Positive supply current.

REV. 0

Table I. Truth Table

ADG751 IN Switch Condition

0ON
1 OFF

–5–

ADG751

VD OR VS DRAIN SOURCE VOLTAGE – Volts

45

15

0 1.0

R

ON

– V

2.0 3.0

40

35

30
25

20

4.0 5.0 5.4

VDD = +2.7V

VDD = +3.3V

VDD = +4.5V

VDD = +5.5V

TA = +258C

50

55

60

65

VD OR VS DRAIN SOURCE VOLTAGE – Volts

45

15

0 0.4

R

ON

– V

1.2 3.0

40

35

30
25

20

50

55

60

65

VDD = +3V

0.8 1.6 2.0 2.4 2.8

–408C

+258C

+858C

+1258C

–Typical Performance Characteristics

35

VDD = +2.7V

30

25

– V

20

ON

R

15

10

5

01

VD OR VS DRAIN SOURCE VOLTAGE – Volts

VDD = +3.3V

VDD = +5.5V

23 4 5

TA = +258C

VDD = +4.5V

Figure 1. On Resistance as a Function of VD (VS) Single
Supplies (A Grade)

35

VDD = +3V

30

25

+1258C

+858C

Figure 4. On Resistance as a Function of VD (VS) Single
Supplies (B Grade)

– V

20

ON

R

15

10

5

0 0.5

1.0 1.5 2.0 2.5

V

OR V

DRAIN SOURCE VOLTAGE – Volts

+258C

–408C

3.0

Figure 2. On Resistance as a Function of VD (VS) for
Different Temperatures V

35

30

25

20

– V

ON

R

15

10

5

0

Figure 3. On Resistance as a Function of VD (VS) for
Different Temperatures V

01

V

OR V

= 3 V (A Grade)

DD

+1258C

+858C

+258C

23

DRAIN SOURCE VOLTAGE – Volts

= 5 V (A Grade)

DD

4

VDD = +5V

–408C

Figure 5. On Resistance as a Function of VD (VS) for
Different Temperatures V

65
60
55
50
45
40
35

– V

ON

30

R

25
20
15
10

5
0

5

0

1.0 4.03.0

VD OR VS DRAIN SOURCE VOLTAGE – Volts

= 3 V (B Grade)

DD

+1258C

+858C

+258C

2.0

VDD = +5V

–408C

5.0

Figure 6. On Resistance as a Function of VD (VS) for
Different Temperatures V

–6–

= 5 V (B Grade)

DD

REV. 0

0

FREQUENCY – Hz

10n

0.1

I

DD

– Amps

1k 10k

100n

10m

1m

1m

10m

100k 100M 10M

B GRADE

A GRADE

VDD = +5V
T

A

= +258C

SOURCE VOLTAGE – Volts

0

Q

INJ

– pC

5.0

–10

2.0

1.0 4.03.0

–8

–6

–4

–2

0

2

4

6

VDD = +5V

TA = +258C

VDD = +3V

TA = +258C

–5

BANDWIDTH – dB

ADG751

–10

110

FREQUENCY – MHz

100

300

Figure 7. On Response vs. Frequency (A Grade)

0

TA = +258C

–5

BANDWIDTH – dB

–10

1

10

FREQUENCY – MHz

100

300

Figure 8. On Response vs. Frequency (B Grade)

0

TA = +258C

–25

Figure 10. Supply Current vs. Input Switching Frequency

Figure 11. Charge Injection vs. Source/Drain Voltage

–50

–75

OFF ISOLATION – dB

–100

–125

Figure 9. Off Isolation vs. Frequency for Both Grades

REV. 0

A GRADE

110

FREQUENCY – MHz

B GRADE

100

300

–7–

ADG751

GENERAL DESCRIPTION

The ADG751 is an SPST switch constructed using switches in a
T configuration to obtain high “OFF” isolation while maintain­ing good frequency response in the “ON” condition.

Figure 12 shows the T-switch configuration. While the switch is
in the OFF state, the shunt switch is closed and the two series
switches are open. The closed shunt switch provides a signal
path to ground for any of the unwanted signals that find their
way through the off capacitances of the series’ MOS devices.
This results in improved isolation between the input and output
than with an ordinary series switch. When the switch is in the
ON condition, the shunt switch is open and the signal path is
through the two series switches which are now closed.

S

IN

SERIES

SHUNT

D

Figure 12. Basic T-Switch Configuration

LAYOUT CONSIDERATIONS

Where accurate high frequency operation is important, careful
consideration should be given to the printed circuit board layout
and to grounding. Wire wrap boards, prototype boards and
sockets are not recommended because of their high parasitic
inductance and capacitance. The part should be soldered di­rectly to a printed circuit board. A ground plane should cover all
unused areas of the component side of the board to provide a
low impedance path to ground. Removing the ground planes
from the area around the part reduces stray capacitance.

Good decoupling is important in achieving optimum perfor­mance. V

should be decoupled with a 0.1 µF surface mount

DD

capacitor to ground mounted as close as possible to the device
itself.

–8–

REV. 0

Test Circuits

V

S

V

OUT

50V

NETWORK

ANALYZER

NETWORK

ANALYZER

R

L

50V

IN

GND

V

DD

V

DD

V

IN

SD

0.1mF

INSERTION LOSS = 20 LOG

V

OUT

WITH SWITCH

V

OUT

WITHOUT SWITCH

SD

V

S

RON = V1/I

ADG751

V1

IS (OFF)

I

DS

DS

V

S

SD

A A

I

(OFF)

D

NC

V

D

NC = NO CONNECT

SD

ID (ON)

A

V

D

Test Circuit 1. On Resistance

0.1mF

V

S

R

S

V

S

IN

IN

V

DD

V

DD

SD

GND

V

DD

V

DD

SD

GND

Test Circuit 2. Off Leakage

IN

V

R

L

300V

C
35pF

OUT

L

V

S

V

OUT

Test Circuit 4. Switching Times

V

IN

ON

V

C

L

1.0nF

OUT

V

OUT

50% 50%V

90% 90%

t

OFF

OFF

Q

= CL 3 DV

INJ

Test Circuit 3. On Leakage

t

ON

DV

OUT

OUT

NETWORK

ANALYZER

V

S

REV. 0

50V

50V

Test Circuit 6. Off Isolation

Test Circuit 5. Charge Injection

V

DD

0.1mF

V

DD

SD

IN

V

IN

GND

OFF ISOLATION = 20 LOG

NETWORK

ANALYZER

V

OUT

R

L

50V

V

OUT

V

S

Test Circuit 7. Bandwidth

–9–

ADG751

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

8-Lead ␮SOIC

(RM-8)

0.122 (3.10)

0.114 (2.90)

0.006 (0.15)

0.002 (0.05)

0.071 (1.80)

0.059 (1.50)

0.051 (1.30)

0.035 (0.90)

0.122 (3.10)

0.114 (2.90)

PIN 1

SEATING

PLANE

PIN 1

0.006 (0.15)

0.000 (0.00)

85

1

4

0.0256 (0.65) BSC

0.120 (3.05)

0.112 (2.84)

0.018 (0.46)

0.008 (0.20)

6-Lead SOT-23

0.122 (3.10)

0.106 (2.70)

4 5 6

1

2

3

0.075 (1.90)
BSC

0.020 (0.50)

0.010 (0.25)

0.199 (5.05)

0.187 (4.75)

0.043 (1.09)

0.037 (0.94)

0.011 (0.28)

0.003 (0.08)

(RT-6)

0.118 (3.00)

0.098 (2.50)

0.037 (0.95) BSC

0.057 (1.45)

0.035 (0.90)

SEATING
PLANE

0.120 (3.05)

0.112 (2.84)

338
278

0.009 (0.23)

0.003 (0.08)

0.028 (0.71)

0.016 (0.41)

108

08

C3569–8–4/99

0.022 (0.55)

0.014 (0.35)

–10–

PRINTED IN U.S.A.

REV. 0