Analog Devices ADG749BKS Datasheet
CMOS Low Voltage
a
FEATURES
1.8 V to 5.5 V Single Supply
5 (Max) On Resistance
0.75 (Typ) On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times
20 ns
t
ON
6 ns
t
OFF
Typical Power Consumption (<0.01 W)
TTL/CMOS-Compatible
APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
The ADG749 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance and
low leakage currents.
The ADG749 can operate from a single supply range of 1.8 V to
5.5 V, making it ideal for use in battery-powered instruments and
with the new generation of DACs and ADCs from Analog Devices.
Each switch of the ADG749 conducts equally well in both
directions when on. The ADG749 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidths
of greater than 200 MHz can be achieved.
The ADG749 is available in a 6-lead SC70 package.
2.5 SPDT Switch In SC70 Package
ADG749
FUNCTIONAL BLOCK DIAGRAM
ADG749
S2
S1
IN
SWITCHES SHOWN FOR
A LOGIC "1" INPUT
PRODUCT HIGHLIGHTS
1. 1.8 V to 5.5 V Single Supply Operation. The ADG749
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
2. Very Low R
operation, R
3. On-Resistance Flatness (R
4. –3 dB Bandwidth >200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. Fast t
7. Tiny 6-lead SC70 package.
ON/tOFF.
(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
ON
is typically 40 Ω over the temperature range.
ON
FLAT(ON)
D
) (0.75 Ω typ).
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2000
(VDD = 5 V 10%, GND = 0 V. All specifications –40C to +85C, unless otherwise
ADG749–SPECIFICATIONS
1
noted.)
B Version
–40C to
Parameter 25C +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
On Resistance (R
)2 .5 Ω typ VS = 0 V to VDD, IS = –10 mA
ON
DD
V
56 Ω max Test Circuit 1
On Resistance Match Between
Channels (∆R
) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA
ON
0.8 Ω max
On-Resistance Flatness (R
FLAT(ON)
)0.75 Ω typ VS = 0 V to VDD, IS = –10 mA
1.2 Ω max
LEAKAGE CURRENTS
Source OFF Leakage I
2
(OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V
S
VDD = 5.5 V
±0.25 ±0.35 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 4.5 V
D
±0.25 ±0.35 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
INL
or V
INH
±0.1 µA max
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
Off Isolation –67 dB typ R
2
14 ns typ RL = 300 Ω, CL = 35 pF
20 ns max V
= 3 V, Test Circuit 4
S
3 ns typ RL = 300 Ω, CL = 35 pF
6 ns max V
8 ns typ RL = 300 Ω, CL = 35 pF,
D
1 ns min V
–87 dB typ R
= 3 V, Test Circuit 4
S
= VS2 = 3 V, Test Circuit 5
S1
= 50 Ω, CL = 5 pF, f = 10 MHz
L
= 50 Ω, CL = 5 pF, f = 1 MHz,
L
Test Circuit 6
Channel-to-Channel Crosstalk –62 dB typ R
–82 dB typ R
= 50 Ω, CL = 5 pF, f = 10 MHz
L
= 50 Ω, CL = 5 pF, f = 1 MHz,
L
Test Circuit 7
Bandwidth –3 dB 200 MHz typ R
(OFF) 7 pF typ
C
S
= 50 Ω, CL = 5 pF, Test Circuit 8
L
CD, CS (ON) 27 pF typ
POWER REQUIREMENTS V
= 5.5 V
DD
Digital Inputs = 0 V or 5 V
I
DD
0.001 µA typ
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. 0
ADG749
1
SPECIFICATIONS
Parameter 25C +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
On Resistance (R
On Resistance Match Between
Channels (∆R
On-Resistance Flatness (R
LEAKAGE CURRENTS
Source OFF Leakage I
Channel ON Leakage I
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
I
or I
INL
INH
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
Off Isolation –67 dB typ R
Channel-to-Channel Crosstalk –62 dB typ R
Bandwidth –3 dB 200 MHz typ R
C
(OFF) 7 pF typ
S
CD, CS (ON) 27 pF typ
POWER REQUIREMENTS V
I
DD
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
)67Ω typ VS = 0 V to VDD, IS = –10 mA,
ON
) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA
ON
2
(OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V,
S
, IS (ON) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 3 V,
D
INH
INL
(VDD = 3 V 10%, GND = 0 V. All specifications –40C to +85C, unless otherwise noted.)
B Version
–40C to
DD
V
10 Ω max Test Circuit 1
0.8 Ω max
FLAT(ON)
) 2.5 Ω typ VS = 0 V to VDD, IS = –10 mA
VDD = 3.3 V
±0.25 ±0.35 nA max Test Circuit 2
±0.25 ±0.35 nA max Test Circuit 3
2.0 V min
0.4 V max
0.005 µA typ VIN = V
INL
±0.1 µA max
2
16 ns typ RL = 300 Ω, CL = 35 pF
24 ns max V
= 2 V, Test Circuit 4
S
4 ns typ RL = 300 Ω, CL = 35 pF
7 ns max V
D
8 ns typ RL = 300 Ω, CL = 35 pF
1 ns min V
–87 dB typ R
= 2 V, Test Circuit 4
S
= VS2 = 2 V, Test Circuit 5
S1
= 50 Ω, CL = 5 pF, f = 10 MHz
L
= 50 Ω, CL = 5 pF, f = 1 MHz,
L
Test Circuit 6
= 50 Ω, CL = 5 pF, f = 10 MHz
–82 dB typ R
L
= 50 Ω, CL = 5 pF, f = 1 MHz,
L
Test Circuit 7
= 50 Ω, CL = 5 pF, Test Circuit 8
L
= 3.3 V
DD
Digital Inputs = 0 V or 3 V
0.001 µA typ
1.0 µA max
or V
INH
–3–REV. 0
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