1.8 V to 5.5 V Single Supply
5 (Max) On Resistance
0.75 (Typ) On Resistance Flatness
Automotive Temperature Range: –40C to +125C
–3 dB Bandwidth > 200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times:
= 12 ns
t
ON
= 6 ns
t
OFF
Typical Power Consumption (< 0.01 W)
TTL/CMOS Compatible
APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
2:1 MUX/SPDT Switch in SC70 Package
ADG749
FUNCTIONAL BLOCK DIAGRAM
ADG749
S2
S1
IN
*SWITCHES SHOWN FOR A LOGIC “1” INPUT
D
GENERAL DESCRIPTION
The ADG749 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance,
and low leakage currents.
The ADG749 can operate from a single-supply range of 1.8 V to
5.5 V, making it ideal for use in battery-powered instruments and
with the new generation of DACs and ADCs from Analog Devices.
Each switch of the ADG749 conducts equally well in both
directions when on. The ADG749 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidths
of greater than 200 MHz can be achieved.
The ADG749 is available in a 6-lead SC70 package.
PRODUCT HIGHLIGHTS
1. 1.8 V to 5.5 V Single-Supply Operation. The ADG749 offers
high performance, including low on resistance and fast
switching times, and is fully specified and guaranteed with
3V and 5 V supply rails.
2. Very Low R
At 1.8 V operation, R
ture range.
3. Automotive Temperature Range: –40C to 125C.
4. On Resistance Flatness (R
5. –3 dB Bandwidth > 200 MHz.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
7. Fast t
8. Tiny 6-lead SC70 package.
ON/tOFF.
(5 Ω Max at 5 V and 10 Ω Max at 3 V).
ON
is typically 40 Ω over the tempera-
ON
FLAT(ON)
) (0.75 Ω typ).
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Table I. Truth Table
ADG749 INSwitch S1Switch S2
0ONOFF
1OFFON
PIN CONFIGURATION
TERMINOLOGY
V
DD
Most Positive Power Supply Potential
GNDGround (0 V) Reference
SSource Terminal. May be an input or output.
DDrain Terminal. May be an input or output.
INLogic Control Input
R
ON
∆R
ON
R
FLAT(ON)
Ohmic Resistance between D and S
On Resistance Match between any Two Channels
i.e., R
max – R
ON
ON
min
Flatness is defined as the difference between the
maximum and minimum value of on resistance as
measured over the specified analog signal range.
I
(Off)Source Leakage Current with the Switch Off
S
I
, IS (On)Channel Leakage Current with the Switch On
D
V
)Analog Voltage on Terminals D and S
D (VS
C
(Off)Off Switch Source Capacitance
S
C
, CS (On) On Switch Capacitance
D
t
ON
Delay between applying the digital control input
and the output switching on.
t
OFF
Delay between applying the digital control input
and the output switching off.
t
D
Off time or on time measured between the 90%
points of both switches, when switching from one
address state to another.
CrosstalkA measure of unwanted signal that is coupled
through from one channel to another as a result
of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through
an off switch.
BandwidthThe frequency at which the output is attenuated
by –3 dBs.
On Response The Frequency Response of the On Switch
Insertion Loss
ADG749BKS–40°C to +125°CSC70 (6-Lead Plastic Surface Mount)KS-6SHB
*Branding on this package is limited to three characters due to space constraints.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
WARNING!
Although the ADG749 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
ESD SENSITIVE DEVICE
REV. A
–
TEMPERATURE – C
0.15
0.10
–0.05
09010
CURRENT – nA
20304050607080
0.05
0
I
D
, IS (ON)
IS (OFF)
V
DD
= 5V
V
D
= 4.5V/1V
V
S
= 1V/4.5V
TEMPERATURE – C
0.15
0.10
–0.05
09010
CURRENT – nA
20304050607080
0.05
0
I
D
, IS (ON)
IS (OFF)
V
DD
= 3V
V
D
= 3V/1V
V
S
= 1V/3V
FREQUENCY – Hz
1n
10
I
SUPPLY
– A
1001k10k100k1M10M 100M
10n
100n
1
10
100
1m
10m
1
VDD = 5V
R
ON
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VDD = 2.7V
VDD = 3.0V
VDD = 5.0V
05.00.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
VDD = 4.5V
Typical Performance Characteristics–
TA = 25C
ADG749
TPC 1. On Resistance vs. VD (VS) Single Supplies
6.0
5.5
5.0
4.5
4.0
3.5
–
3.0
ON
R
2.5
2.0
1.5
1.0
0.5
0
03.00.5
+85C
+25C
–40C
1.01.52.02.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
VDD = 3V
TPC 2. On Resistance vs. VD (VS) for Different
Temperatures V
6.0
5.5
5.0
4.5
4.0
3.5
–
3.0
ON
R
2.5
2.0
1.5
1.0
0.5
0
05.00.5
TPC 3. On Resistance vs. VD (VS) for Different
Temperatures, VDD = 5 V
= 3 V
DD
VDD = 5V
+85C
+25C
–40C
1.0 1.5 2.0 2.5 3.0
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
3.5 4.0 4.5
TPC 4. Leakage Currents vs. Temperature
TPC 5. Leakage Currents vs. Temperature
TPC 6. Supply Current vs. Input Switching Frequency
REV. A
–5–
ADG749
–30
VDD = 5V, 3V
–40
–50
–60
–70
–80
–90
OFF ISOLATION – dB
–100
–110
–120
–130
10k100k1M10M100M
FREQUENCY – Hz
TPC 7. Off Isolation vs. Frequency
–30
–40
–50
–60
–70
–80
–90
CROSSTALK – dB
–100
–110
–120
–130
10k
100k1M10M100M 0
FREQUENCY – Hz
TPC 8. Crosstalk vs. Frequency
VDD = 5V, 3V
0
VDD = 5V
–2
–4
ON RESPONSE – dB
0
–6
100k1M100M
FREQUENCY – Hz
10M10k
TPC 9. On Response vs. Frequency
12
10
= 5V
V
8
6
– pC
4
INJ
Q
2
0
–2
–4
051
V
= 3V
DD
234
VS – V
DD
TPC 10. Charge Injection vs. Source Voltage
–6–
REV. A
Test Circuits
Test Circuits 1 to 8 define the test conditions used in the product specification table.
I
DS
ADG749
V1
SD
V
S
RON = V1/ I
DS
Test Circuit 1. On Resistance
0.1F
V
S
V
S1
V
S2
V
IN
0.1F
S1
S2
IN
IN
IS (OFF)ID (OFF)
V
S
SD
AA
V
D
Test Circuit 2. Off Leakage
V
DD
V
IN
V
DD
SD
GND
R
L
300
C
L
35pF
V
OUT
V
OUT
Test Circuit 4. Switching Times
V
DD
V
V
GND
DD
D
D2
R
L2
300
C
L2
35pF
V
OUT
IN
0V
V
OUT
50%50%
0V
Test Circuit 5. Break-Before-Make Time Delay, t
V
S
Test Circuit 3. On Leakage
50%50%
90%
t
ON
50%50%
t
D
D
SD
90%
t
OFF
t
D
ID (ON)
A
V
D
V
DD
0.1F
V
DD
IN
V
IN
S
GND
50
D
OFF ISOLATION = 20 LOG
Test Circuit 6. Off Isolation
NETWORK
ANALYZER
50
V
OUT
R
L
50
V
OUT
V
V
DD
0.1F
NETWORK
ANALYZER
R
V
L
OUT
50
V
S
S
50
V
S
V
DD
S1
S2
IN
GND
CHANNEL-TO-CHANNEL
CROSSTALK = 20
LOG
D
R
50
V
OUT
V
S
Test Circuit 7. Channel-to-Channel
V
DD
0.1F
V
DD
IN
V
IN
INSERTION LOSS = 20 LOG
S
D
GND
Test Circuit 8. Bandwidth
NETWORK
ANALYZER
R
50
WITH SWITCH
V
OUT
WITHOUT SWITCH
V
OUT
50
L
V
S
V
OUT
Crosstalk
REV. A
–7–
ADG749
APPLICATIONS INFORMATION
The ADG749 belongs to Analog Devices’ new family of CMOS
switches. This series of general-purpose switches has improved
switching times, lower on resistance, higher bandwidths, low
power consumption, and low leakage currents.
ADG749 Supply Voltages
Functionality of the ADG749 extends from 1.8 V to 5.5 V single
supply, which makes it ideal for battery-powered instruments,
where power efficiency and performance are important design
parameters.
It is important to note that the supply voltage effects the input
signal range, the on resistance, and the switching times of the part.
By taking a look at the typical performance characteristics and the
specifications, the effects of the power supplies can be clearly seen.
For V
= 1.8 V operation, RON is typically 40 Ω over the
DD
temperature range.
On Response vs. Frequency
Figure 1 illustrates the parasitic components that affect the ac
performance of CMOS switches (the switch is shown surrounded
by a box). Additional external capacitances will further degrade
some performance. These capacitances affect feedthrough,
crosstalk, and system bandwidth.
C
DS
S
R
V
IN
ON
D
C
D
C
LOAD
R
LOAD
V
OUT
Figure 1. Switch Represented by Equivalent Parasitic
Components
The transfer function that describes the equivalent diagram of
the switch (Figure 1) is of the form A(s) shown below.
A(s) = R
s(RONCDS) + 1
T
s(R
TRONCT
) + 1
where:
The signal transfer characteristic is dependent on the switch
channel capacitance, CDS. This capacitance creates a frequency
zero in the numerator of the transfer function A(s). Because the
switch on resistance is small, this zero usually occurs at high
frequencies. The bandwidth is a function of the switch output
capacitance combined with CDS and the load capacitance. The
frequency pole corresponding to these capacitances appears in
the denominator of A(s).
The dominant effect of the output capacitance, C
, causes the pole
D
breakpoint frequency to occur first. Therefore, in order to maximize
bandwidth, a switch must have a low input and output capacitance
and low on resistance. The On Response vs. Frequency plot for
the ADG749 can be seen in TPC 9.
Off Isolation
Off isolation is a measure of the input signal coupled through an
off switch to the switch output. The capacitance, C
, couples
DS
the input signal to the output load when the switch is off, as
shown in Figure 2.
C
DS
S
V
IN
D
C
D
C
LOAD
R
LOAD
V
OUT
Figure 2. Off Isolation Is Affected by External Load
Resistance and Capacitance
The larger the value of CDS, the larger the values of feedthrough
that will be produced. The typical performance characteristic
graph of TPC 7 illustrates the drop in off isolation as a function
of frequency. From dc to roughly 200 kHz, the switch shows
better than –95 dB isolation. Up to frequencies of 10 MHz, the off
isolation remains better than –67 dB. As the frequency increases,
more and more of the input signal is coupled through to the output.
Off isolation can be maximized by choosing a switch with the
smallest C
possible. The values of load resistance and capacitance
DS
also affect off isolation, since they contribute to the coefficients of
the poles and zeros in the transfer function of the switch when open.