ANALOG DEVICES ADG749 Service Manual

CMOS 1.8 V to 5.5 V, 2.5 

www.BDTIC.com/ADI

a

FEATURES

1.8 V to 5.5 V Single Supply
5  (Max) On Resistance

0.75  (Typ) On Resistance Flatness
Automotive Temperature Range: –40C to +125C
–3 dB Bandwidth > 200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times:

= 12 ns

t

ON

= 6 ns

t

OFF

Typical Power Consumption (< 0.01 W)
TTL/CMOS Compatible

APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement

2:1 MUX/SPDT Switch in SC70 Package

ADG749

FUNCTIONAL BLOCK DIAGRAM

ADG749

S2

S1

IN

*SWITCHES SHOWN FOR A LOGIC “1” INPUT

D

GENERAL DESCRIPTION

The ADG749 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance,
and low leakage currents.

The ADG749 can operate from a single-supply range of 1.8 V to

5.5 V, making it ideal for use in battery-powered instruments and
with the new generation of DACs and ADCs from Analog Devices.

Each switch of the ADG749 conducts equally well in both
directions when on. The ADG749 exhibits break-before-make
switching action.

Because of the advanced submicron process, –3 dB bandwidths
of greater than 200 MHz can be achieved.

The ADG749 is available in a 6-lead SC70 package.

PRODUCT HIGHLIGHTS

1. 1.8 V to 5.5 V Single-Supply Operation. The ADG749 offers
high performance, including low on resistance and fast
switching times, and is fully specified and guaranteed with
3V and 5 V supply rails.

2. Very Low R
At 1.8 V operation, R
ture range.

3. Automotive Temperature Range: –40C to 125C.

4. On Resistance Flatness (R

5. –3 dB Bandwidth > 200 MHz.

6. Low Power Dissipation. CMOS construction ensures low
power dissipation.

7. Fast t

8. Tiny 6-lead SC70 package.

ON/tOFF.

(5 Ω Max at 5 V and 10 Ω Max at 3 V).

ON

is typically 40 Ω over the tempera-

ON

FLAT(ON)

) (0.75 Ω typ).

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone]www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

ADG749–SPECIFICATIONS

www.BDTIC.com/ADI

Parameter 25C +85C +125C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

On Resistance Match Between

Channels (∆R

On Resistance Flatness (R

LEAKAGE CURRENTS

Source Off Leakage I

Channel On Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Off Isolation –67 dB typ R

Channel-to-Channel Crosstalk –62 dB typ R

Bandwidth –3 dB 200 MHz typ R

(OFF) 7 pF typ

C

S

CD, CS (ON) 27 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature range is as follows: B Version: – 40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

) 2.5 Ω typ VS = 0 V to VDD, IS = –10 mA;

ON

5 67 Ω max Test Circuit 1

) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA

ON

FLAT(ON)

2

(Off) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;

S

)0.75 Ω typ VS = 0 V to VDD, IS = –10 mA

±0.25 ±0.35 1 nA max Test Circuit 2

, IS (On) ±0.01 nA typ VS = VD = 1 V or VS = VD = 4.5 V;

D

±0.25 ±0.35 5 nA max Test Circuit 3

INH

INL

0.005 µA typ VIN = V

2

7 ns typ RL = 300 Ω, CL = 35 pF

3 ns typ RL = 300 Ω, CL = 35 pF

8 ns typ RL = 300 Ω, CL = 35 pF,

D

–87 dB typ R

–82 dB typ R

0.001 µA typ

(VDD = 5 V  10%, GND = 0 V.)

B Version
–40C to –40C to

V

DD

0.8 0.8 Ω max

1.2 1.5 Ω max

2.4 V min

0.8 V max

±0.1 µA max

12 ns max V

6 ns max V

1 ns min V

1.0 µA max

VDD = 5.5 V

or V

INL

= 3 V; Test Circuit 4

S

= 3 V; Test Circuit 4

S

= VS2 = 3 V; Test Circuit 5

S1

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

INH

Test Circuit 6

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 7

= 50 Ω, CL = 5 pF; Test Circuit 8

L

= 5.5 V

DD

Digital Inputs = 0 V or 5.5 V

1

–2–

REV. A

ADG749

www.BDTIC.com/ADI

1

SPECIFICATIONS

Parameter 25ⴗC +85ⴗC +125ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

On Resistance Match Between

Channels (∆R

On Resistance Flatness (R

LEAKAGE CURRENTS

Source Off Leakage I

Channel On Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Off Isolation –67 dB typ R

Channel-to-Channel Crosstalk –62 dB typ R

Bandwidth –3 dB 200 MHz typ R
C

(Off) 7 pF typ

S

CD, CS (On) 27 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature range is as follows: B Version: –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

ON

INH

(VDD = 3 V ⴞ 10%, GND = 0 V.)

B Version

–40ⴗC to –40ⴗC to

V

)6 7 Ω typ VS = 0 V to VDD, IS = –10 mA;

ON

DD

10 12 Ω max Test Circuit 1

) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA

0.8 0.8 Ω max

FLAT(ON)

2

(Off) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

S

) 2.5 Ω typ VS = 0 V to VDD, IS = –10 mA

VDD = 3.3 V

±0.25 ±0.35 1 nA max Test Circuit 2

, IS (On) ±0.01 nA typ VS = VD = 1 V or VS = VD = 3 V;

D

±0.25 ±0.35 5 nA max Test Circuit 3

INH

INL

0.005 µA typ VIN = V

2.0 V min

0.8 V max

INL

or V

INH

±0.1 µA max

2

10 ns typ RL = 300 Ω, CL = 35 pF

15 ns max V

= 2 V; Test Circuit 4

S

4 ns typ RL = 300 Ω, CL = 35 pF

8 ns max V

8 ns typ RL = 300 Ω, CL = 35 pF

D

1 ns min V

–87 dB typ R

= 2 V; Test Circuit 4

S

= VS2 = 2 V; Test Circuit 5

S1

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 6

= 50 Ω, CL = 5 pF, f = 10 MHz

–82 dB typ R

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 7

= 50 Ω, CL = 5 pF; Test Circuit 8

L

= 3.3 V

DD

Digital Inputs = 0 V or 3.3 V

0.001 µA typ

1.0 µA max

REV. A

–3–

ADG749

www.BDTIC.com/ADI

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C, unless otherwise noted)

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

Analog, Digital Inputs

2

. . . . . . . . . . –0.3 V to VDD + 0.3 V or

1

30 mA, Whichever Occurs First

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

(Pulsed at 1 ms, 10% Duty Cycle Max)

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +125°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C

SC70 Package, Power Dissipation . . . . . . . . . . . . . . . . 315 mW

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332°C/W

θ

JA

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120°C/W

θ

JC

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C

ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV

1

Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.

2

Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.

Table I. Truth Table

ADG749 IN Switch S1 Switch S2

0ONOFF
1 OFF ON

PIN CONFIGURATION

TERMINOLOGY

V

DD

Most Positive Power Supply Potential
GND Ground (0 V) Reference
S Source Terminal. May be an input or output.
DDrain Terminal. May be an input or output.
IN Logic Control Input
R

ON

∆R

ON

R

FLAT(ON)

Ohmic Resistance between D and S

On Resistance Match between any Two Channels

i.e., R

max – R

ON

ON

min

Flatness is defined as the difference between the

maximum and minimum value of on resistance as

measured over the specified analog signal range.
I

(Off) Source Leakage Current with the Switch Off

S

I

, IS (On) Channel Leakage Current with the Switch On

D

V

)Analog Voltage on Terminals D and S

D (VS

C

(Off) Off Switch Source Capacitance

S

C

, CS (On) On Switch Capacitance

D

t

ON

Delay between applying the digital control input

and the output switching on.
t

OFF

Delay between applying the digital control input

and the output switching off.
t

D

Off time or on time measured between the 90%

points of both switches, when switching from one

address state to another.
Crosstalk A measure of unwanted signal that is coupled

through from one channel to another as a result

of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through

an off switch.
Bandwidth The frequency at which the output is attenuated

by –3 dBs.
On Response The Frequency Response of the On Switch
Insertion Loss

Loss due to On Resistance of the Switch

S2

6

5

D

4

S1

V

GND

IN

DD

1

ADG749

2

TOP VIEW

(Not to Scale)

3

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding Information*

ADG749BKS –40°C to +125°CSC70 (6-Lead Plastic Surface Mount) KS-6 SHB

*Branding on this package is limited to three characters due to space constraints.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG749 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–4–

WARNING!

ESD SENSITIVE DEVICE

REV. A