1.8 V to 5.5 V single supply
2 Ω (typ) on resistance
Low on resistance flatness
−3 dB bandwidth >200 MHz
Rail-to-rail operation
6-lead and 5-lead SC70 packages
Fast switching times
18 ns
t
ON
t
12 ns
OFF
Typical power consumption (<0.01 µW)
TTL-/CMOS-compatible
APPLICATIONS
Battery-powered systems
Communication systems
Sample-and-hold systems
Audio signal routing
Video switching
Mechanical reed relay replacement
2 Ω SPST Switches in SC70 Packages
ADG741/ADG742
FUNCTIONAL BLOCK DIAGRAMS
ADG741
S
SWITCH SHOWN FOR
A LOGIC 1 INPUT
Figure 1.
ADG742
S
SWITCH SHOWN FOR
A LOGIC 1 INPUT
Figure 2.
D
IN
02076-001
D
IN
02076-019
GENERAL DESCRIPTION
The ADG741/ADG742 are monolithic CMOS SPST switches.
These switches are designed using an advanced submicron
process that provides low power dissipation, yet offers high
switching speed, low on resistance, and low leakage currents. In
addition, −3 dB bandwidths of greater than 200 MHz can be
achieved.
The ADG741/ADG742 can operate from a single 1.8 V to 5.5 V
supply, making them ideal for use in battery-powered instruments and with Analog Devices’ new generation of DACs and
ADCs.
As shown in the Functional Block Diagrams, with a logic input
of 1 the switch of the ADG741 is closed, while that of the
ADG742 is open. Each switch conducts equally well in both
directions when on.
The ADG741/ADG742 are available in 6-lead and 5-lead SC70
packages.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
PRODUCT HIGHLIGHTS
1. 1.8 V to 5.5 V Single-Supply Operation.
The ADG741/ADG742 offer high performance, including
low on resistance and fast switching times. They are fully
specified and guaranteed with 3 V and 5 V supply rails.
VDD = 5 V ±10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 1.
B Version
Parameter 25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 2 Ω typ VS = 0 V to VDD, IS = −10 mA;
3 4 Ω max Figure 11
On Resistance Flatness (R
1.0 Ω max
LEAKAGE CURRENTS1 V
Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
±0.25 ±0.35 nA max Figure 12
Drain OFF Leakage ID (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
±0.25 ±0.35 nA max Figure 12
Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 4.5 V;
±0.25 ±0.35 nA max Figure 13
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
0.8 V max
INL
Input Current
I
or I
INL
0.005 µA typ VIN = V
INH
±0.1 µA max
DYNAMIC CHARACTERISTICS1
tON 12 ns typ RL = 300 Ω, CL = 35 pF
18 ns max VS = 3 V; Figure 14
t
8 ns typ RL = 300 Ω, CL = 35 pF
OFF
12 ns max VS = 3 V; Figure 14
Charge Injection 5 pC typ VS = 2 V, RS = 0 Ω, CL = 1 nF; Figure 15
Off Isolation −55 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−75 dB typ RL = 50 Ω, CL= 5 pF, f = 1 MHz; Figure 16
Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF; Figure 17
CS (OFF) 17 pF typ
CD (OFF) 17 pF typ
CD, CS (ON) 38 pF typ
POWER REQUIREMENTS VDD = 5.5 V
Digital Inputs = 0 V or 5 V
IDD 0.001 µA typ
1.0 µA max
1
Guaranteed by design; not subject to production test.
) 0.5 Ω typ VS = 0 V to VDD, IS = −10 mA
FLAT (ON)
= 5.5 V
DD
2.4 V min
or V
INH
INL
Rev. A | Page 3 of 12
ADG741/ADG742
www.BDTIC.com/ADI
VDD = 3 V ±10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2.
B Version
Parameter 25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 3.5 Ω typ VS = 0 V to VDD, IS = −10 mA;
5 6 Ω max Figure 11
On Resistance Flatness (R
LEAKAGE CURRENTS1 V
Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;
±0.25 ±0.35 nA max Figure 12
Drain OFF Leakage ID (OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;
±0.25 ±0.35 nA max Figure 12
Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 3 V;
±0.25 ±0.35 nA max Figure 13
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
0.4 V max
INL
Input Current
I
or I
0.005 µA typ VIN = V
INL
INH
±0.1 µA max
DYNAMIC CHARACTERISTICS1
tON 14 ns typ RL = 300 Ω, CL = 35 pF
20 ns max VS = 2 V, Figure 14
t
8 ns typ RL = 300 Ω, CL = 35 pF
OFF
13 ns max VS = 2 V, Figure 14
Charge Injection 4 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 15
Off Isolation −55 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−75 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 16
Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF; Figure 17
CS (OFF) 17 pF typ
CD (OFF) 17 pF typ
CD, CS (ON) 38 pF typ
POWER REQUIREMENTS VDD = 3.3 V
Digital Inputs = 0 V or 3 V
IDD 0.001 µA typ
1.0 µA max
1
Guaranteed by design; not subject to production test.
) 1.5 Ω typ VS = 0 V to VDD, IS = −10 mA
FLAT (ON)
= 3.3 V
DD
2.0 V min
or V
INL
INH
Rev. A | Page 4 of 12
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