ANALOG DEVICES ADG741, ADG742 Service Manual

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CMOS Low Voltage

FEATURES

1.8 V to 5.5 V single supply 2 Ω (typ) on resistance Low on resistance flatness
−3 dB bandwidth >200 MHz Rail-to-rail operation 6-lead and 5-lead SC70 packages Fast switching times
18 ns
t
ON
t
12 ns
OFF
Typical power consumption (<0.01 µW) TTL-/CMOS-compatible

APPLICATIONS

Battery-powered systems Communication systems Sample-and-hold systems Audio signal routing Video switching Mechanical reed relay replacement
2 Ω SPST Switches in SC70 Packages
ADG741/ADG742

FUNCTIONAL BLOCK DIAGRAMS

ADG741
S
SWITCH SHOWN FOR A LOGIC 1 INPUT
Figure 1.
ADG742
S
SWITCH SHOWN FOR A LOGIC 1 INPUT
Figure 2.
D
IN
02076-001
D
IN
02076-019

GENERAL DESCRIPTION

The ADG741/ADG742 are monolithic CMOS SPST switches. These switches are designed using an advanced submicron process that provides low power dissipation, yet offers high switching speed, low on resistance, and low leakage currents. In addition, −3 dB bandwidths of greater than 200 MHz can be achieved.
The ADG741/ADG742 can operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery-powered instru­ments and with Analog Devices’ new generation of DACs and ADCs.
As shown in the Functional Block Diagrams, with a logic input of 1 the switch of the ADG741 is closed, while that of the ADG742 is open. Each switch conducts equally well in both directions when on.
The ADG741/ADG742 are available in 6-lead and 5-lead SC70 packages.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

PRODUCT HIGHLIGHTS

1. 1.8 V to 5.5 V Single-Supply Operation.
The ADG741/ADG742 offer high performance, including low on resistance and fast switching times. They are fully specified and guaranteed with 3 V and 5 V supply rails.
2. Ver y L o w R
At 1.8 V operation, R temperature range.
3. On Resistance Flatness R
4. −3 dB Bandwidth >200 MHz.
5. Low Power Dissipation.
CMOS construction ensures low power dissipation.
6. Fast t
ON/tOFF
7. Tiny 6-Lead and 5-Lead SC70 Packages.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 © 2005 Analog Devices, Inc. All rights reserved.
(3 Ω max at 5 V, 5 Ω max at 3 V).
ON
is typically 40 Ω over the
ON
(1 Ω max).
FLAT (ON)
.
ADG741/ADG742
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TABLE OF CONTENTS
Specifications..................................................................................... 3
Applications Information.............................................................. 10
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
Typical Performance Characteristics ............................................. 7
Terminology ...................................................................................... 8
Test Circuits....................................................................................... 9
REVISION HISTORY
3/05—Rev. 0 to Rev. A
Added 5-Lead Package.......................................................Universal
Change to Absolute Maximum Ratings......................................... 5
Inserted New Figure 4...................................................................... 6
Added Terminology Section ........................................................... 8
Replaced Figure 11, Figure 12, and Figure 13............................... 9
Updated Outline Dimensions....................................................... 12
Changes to Ordering Guide.......................................................... 12
10/00—Revision 0: Initial Version
Supply Voltages........................................................................... 10
On Response vs. Frequency ...................................................... 10
Off Isolation ................................................................................ 10
Outline Dimensions....................................................................... 11
Ordering Guide .......................................................................... 11
Rev. A | Page 2 of 12
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SPECIFICATIONS

VDD = 5 V ±10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 1.
B Version Parameter 25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 2 typ VS = 0 V to VDD, IS = −10 mA; 3 4 Ω max Figure 11 On Resistance Flatness (R
1.0 max
LEAKAGE CURRENTS1 V
Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; ±0.25 ±0.35 nA max Figure 12 Drain OFF Leakage ID (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; ±0.25 ±0.35 nA max Figure 12 Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 4.5 V; ±0.25 ±0.35 nA max Figure 13
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INH
0.8 V max
INL
Input Current
I
or I
INL
0.005 µA typ VIN = V
INH
±0.1 µA max
DYNAMIC CHARACTERISTICS1
tON 12 ns typ RL = 300 Ω, CL = 35 pF 18 ns max VS = 3 V; Figure 14 t
8 ns typ RL = 300 Ω, CL = 35 pF
OFF
12 ns max VS = 3 V; Figure 14 Charge Injection 5 pC typ VS = 2 V, RS = 0 Ω, CL = 1 nF; Figure 15 Off Isolation −55 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−75 dB typ RL = 50 Ω, CL= 5 pF, f = 1 MHz; Figure 16 Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF; Figure 17 CS (OFF) 17 pF typ CD (OFF) 17 pF typ
CD, CS (ON) 38 pF typ POWER REQUIREMENTS VDD = 5.5 V Digital Inputs = 0 V or 5 V
IDD 0.001 µA typ
1.0 µA max
1
Guaranteed by design; not subject to production test.
) 0.5 typ VS = 0 V to VDD, IS = −10 mA
FLAT (ON)
= 5.5 V
DD
2.4 V min
or V
INH
INL
Rev. A | Page 3 of 12
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VDD = 3 V ±10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2.
B Version Parameter 25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 3.5 typ VS = 0 V to VDD, IS = −10 mA; 5 6 Ω max Figure 11 On Resistance Flatness (R
LEAKAGE CURRENTS1 V
Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V; ±0.25 ±0.35 nA max Figure 12 Drain OFF Leakage ID (OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V; ±0.25 ±0.35 nA max Figure 12
Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 3 V; ±0.25 ±0.35 nA max Figure 13 DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
0.4 V max
INL
Input Current
I
or I
0.005 µA typ VIN = V
INL
INH
±0.1 µA max DYNAMIC CHARACTERISTICS1
tON 14 ns typ RL = 300 Ω, CL = 35 pF
20 ns max VS = 2 V, Figure 14
t
8 ns typ RL = 300 Ω, CL = 35 pF
OFF
13 ns max VS = 2 V, Figure 14
Charge Injection 4 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 15
Off Isolation −55 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−75 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 16
Bandwidth −3 dB 200 MHz typ RL = 50 Ω, CL = 5 pF; Figure 17
CS (OFF) 17 pF typ
CD (OFF) 17 pF typ
CD, CS (ON) 38 pF typ POWER REQUIREMENTS VDD = 3.3 V
Digital Inputs = 0 V or 3 V
IDD 0.001 µA typ
1.0 µA max
1
Guaranteed by design; not subject to production test.
) 1.5 typ VS = 0 V to VDD, IS = −10 mA
FLAT (ON)
= 3.3 V
DD
2.0 V min
or V
INL
INH
Rev. A | Page 4 of 12
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ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 3.
Parameters Ratings
VDD to GND −0.3 V to +7 V Analog, Digital Inputs1
Continuous Current, S or D 30 mA Peak Current, S or D (Pulsed at 1ms,
10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) −40°C to +85°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C SC70 Package
θJA Thermal Impedance 494.8°C/W
θJC Thermal Impedance 120°C/W Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C ESD 1.5 kV
1
Overvoltages at IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
−0.3 V to V or 30 mA, Whichever Occurs First
100 mA
+ 0.3 V
DD
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.
Table 4. Truth Table
ADG741 In ADG742 In Switch Condition
0 1 OFF 1 0 ON

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degrada­tion or loss of functionality.
Rev. A | Page 5 of 12
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PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

1
D
ADG741/
S
2
ADG742
TOP VIEW
(Not to Scale)
GND
3
NC = NO CONNECT
Figure 3. 6-Lead Pin Configuration
6
V
DD
NC
5
IN
4
02076-002
GND
D
1
S
2
3
ADG741/
ADG742
TOP VIEW
(Not to Scale)
5
V
DD
4
IN
02076-018
Figure 4. 5-Lead Pin Configuration
Table 5. Pin Function Descriptions
Pin No. (6-Lead) Pin No. (5-Lead) Mnemonic Description
1 1 D Drain Terminal. May be an input or output. 2 2 S Source Terminal. May be an input or output. 3 3 GND Ground (0 V) Reference. 4 4 IN Logic Control Input. 5 - NC No Connect. 6 5 V
DD
Most Positive Power Supply Potential.
Rev. A | Page 6 of 12
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TYPICAL PERFORMANCE CHARACTERISTICS

3.5 VDD = 2.7V
3.0
2.5
2.0
(Ω)
ON
R
1.5
VDD = 3.0V
VDD = 5.0V
TA = 25°C
VDD = 4.5V
10m
100
(A)
SUPPLY
I
VDD = 5V
1m
µ
10
µ
µ
1
1.0
0.5
0
0 5.00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDOR VS (DRAIN OR SOURCE VOLTAGE (V))
Figure 5. On Resistance as a Function of V
3.5
3.0 +85°C
2.5
2.0
(Ω)
ON
R
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VD OR VS (DRAIN OR SOURCE VOLTAGE (V))
+25°C
–40°C
Figure 6. On Resistance as a Function of V
for Different Temperatures V
3.5
3.0
(VS) Single Supplies
D
VDD = 3V
(VS)
D
= 3 V
DD
VDD = 5V
02076-003
02076-004
100n
10n
1n
100 1k 100k 1M
10 10M10k
FREQUENCY (Hz)
Figure 8. Supply Current vs. Input Switching Frequency
–10
VDD = 5V, 3V
–20
–30
–40
–50 –60
–70
OFF ISOLATION (dB)
–80
–90
–100
–110
100k 1M 100M
FREQUENCY (Hz)
10M10k
Figure 9. Off Is olation v s. Frequency
0
VDD = 3V
02076-006
02076-007
2.5
2.0
(Ω)
ON
R
1.5
1.0
0.5
0
0 5.00.5
Figure 7. On Resistance as a Function of V
+85°C
+25°C
–40°C
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VD OR VS (DRAIN OR SOURCE VOLTAGE (V))
(VS)
D
for Different Temperatures V
DD
= 5 V
02076-005
Rev. A | Page 7 of 12
–2
–4
ON RESPONSE (dB)
–6
100k 1M 100M
FREQUENCY (Hz)
10M10k
02076-008
Figure 10. On Response vs. Frequency
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TERMINOLOGY

R
ON
Ohmic resistance between D and S.
C
, CS (ON)
D
On switch capacitance. Measured with reference to ground.
R
FLAT (ON)
Flatness is defined as the difference between the maximum and minimum value of on resistance as measured.
I
(OFF)
S
Source leakage current with the switch off.
I
(OFF)
D
Drain leakage current with the switch off.
I
, IS (ON)
D
Channel leakage current with the switch on.
V
(VS)
D
Analog voltage on Terminal D and Terminal S.
(OFF)
C
S
Off switch source capacitance. Measured with reference to ground.
(OFF)
C
D
Off switch drain capacitance. Measured with reference to ground.
t
ON
Delay time between the 50% and the 90% points of the digital input and switch on condition. See Figure 14.
t
OFF
Delay time between the 50% and the 90% points of the digital input and switch off condition.
Off Isolation
ure of unwanted signal coupling through an off switch.
A meas
Charge Injection A me
asure of the glitch impulse transferred from the digital
input to the analog output during on-off switching.
Bandwidth
requency at which the output is attenuated by −3 dB.
The f
On Response T
he frequency response of the on switch.
On Loss
oltage drop across the on switch as how many dBs the
The v signal is away from 0 dB at very low frequencies. See Figure 10.
Rev. A | Page 8 of 12
ADG741/ADG742
V
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TEST CIRCUITS

V
SD
S
Figure 11. On Resistance
IS (OFF) ID (OFF)
V
I
DS
02076-009
V
0.1µF
V
SD
V
S
IN
GND
S
DD
DD
SD
A A
Figure 12. Off Leakage
V
OUT
R 300
C
L
L
35pF
V
V
V
OUT
IN
IN
ADG742
V
D
ADG741
NC
02076-010
50% 50%
50% 50%
90% 90%
t
ON
SD
NC = NO CONNECT
Figure 13. On Leakage
t
OFF
02076-012
ID (ON)
A
V
D
02076-011
Figure 14. Switching Times
V
DD
V
DD
C 1nF
V
OUT
L
R
S
V
S
SD
IN
GND
V
IN
ADG741
V
IN
ADG742
V
OUT
Q
INJ
ON
= CL× ∆V
OUT
OFF
V
OUT
02076-013
Figure 15. Charge Injection
V
DD
0.1
µF
V
DD
V
R 50
OUT
L
02076-014
SD
IN
V
V
S
IN
GND
Figure 16. Off Isolation
Rev. A | Page 9 of 12
V
DD
0.1
µF
V
DD
V
R 50
OUT
L
02076-015
SD
IN
V
V
S
IN
GND
Figure 17. Bandwidth
ADG741/ADG742
(
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APPLICATIONS INFORMATION

The ADG741/ADG742 belong to Analog Devices’ family of CMOS switches. This series of general-purpose switches offers improved switching times, lower on resistance, higher bandwidth, low power consumption, and low leakage currents.

SUPPLY VOLTAGES

Functionality of the ADG741/ADG742 extends from 1.8 V to
5.5 V single supply, which makes them ideal for battery­powered instruments where important design parameters are power, efficiency, and performance.
It is important to note that the supply voltage affects the input signal range, the on resistance, and the switching times of the part. By looking at the typical performance characteristics and the specifications, the effects of the power supplies can be clearly seen.
For V temperature range.

ON RESPONSE VS. FREQUENCY

Figure 18 illustrates the parasitic components that affect the ac performance of CMOS switches (the switch is shown surrounded by a box). Additional external capacitances will further degrade some performance. These capacitances affect feedthrough, crosstalk, and system bandwidth.
The transfer function that describes the equivalent diagram of the switch (Figure 18) is of the form A(s), as shown below.
where:
= 1.8 V operation, RON is typically 40 Ω over the
DD
C
DS
S
R
ON
C
V
IN
Figure 18. Switch Represented by Equivalent Parasitic Components
()
=
RsA
T
()
D
()
CRs
DSON
RCRs
CCCC ++=
DSDLOADT
()
+
1
+
TTON
RRRR +=
ONLOADLOADT
D
C
LOAD
⎤ ⎥
1
R
LOAD
V
OUT
02076-016
The signal transfer characteristic is dependent on the switch channel capacitance, C
. This capacitance creates a frequency
DS
zero in the numerator of the transfer function A(s). Because the switch on resistance is small, this zero usually occurs at high frequencies. The bandwidth is a function of the switch output capacitance combined with C
and the load capacitance. The
DS
frequency pole corresponding to these capacitances appears in the denominator of A(s).
The dominant effect of the output capacitance, C
, causes the
D
pole breakpoint frequency to occur first. To maximize bandwidth, a switch must have a low input and output capacitance and low on resistance. The on response vs. frequency is shown in Figure 10.

OFF ISOLATION

Off isolation is a measure of the input signal coupled through an off switch to the switch output. The capacitance, C the input signal to the output load when the switch is off, as shown in Figure 19.
C
DS
S
C
V
IN
Figure 19. Off Isolation Affected by External
Load Resistance and Capacitance
D
C
D
LOAD
R
LOAD
The larger the value of CDS, the larger the value of feedthrough that will be produced. The typical performance characteristic graph of Figure 9 illustrates the drop in off isolation as a function of frequency. From dc to roughly 1 MHz, the switch shows better than −75 dB isolation. Up to frequencies of 10 MHz, the off isolation remains better than −55 dB. As the frequency increases, more and more of the input signal is coupled through to the output. Off isolation can be maximized by choosing a switch with the smallest C
possible. The values
DS
of load resistance and capacitance affect off isolation also, as they contribute to the coefficients of the poles and zeros in the transfer function of the switch when open.
()
sA
()()
)
CRs
DSLOAD
+=1
CRs
TLOAD
, couples
DS
V
OUT
02076-017
Rev. A | Page 10 of 12
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OUTLINE DIMENSIONS

2.20
2.00
1.80
2.40
0.30
0.15
4 5 6
3 2 1
0.65 BSC
2.10
1.80
1.10
0.80
SEATING PLANE
0.40
0.10
0.22
0.08
1.35
1.25
1.15
1.00
0.90
0.70
0.10 MAX
PIN 1
1.30 BSC
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203-AB
Figure 20. 6-Lead Thin Shrink Small Outline Transistor Package [SC70]
(KS-6)
Dimensions shown in millimeters
0.30
0.10
1.35
1.25
1.15
PIN 1
1.00
0.90
0.70
0
.
1
0
M
X
A
Figure 21. 5-Lead Thin Shrink Small Outline Transistor Package [SC70]
2.20
2.00
1.80
2.40
45
123
0.30
0.15
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203AA
2.10
1.80
0.65 BSC
1.10
0.80
SEATING PLANE
0.40
0.10
(KS-5)
Dimensions shown in millimeters
0.22
0.08
0.30
0.10

ORDERING GUIDE

Model Temperature Range Brand
ADG741BKS-R2 −40°C to +85°C SFB 6-lead SC70 KS-6 ADG741BKS-REEL −40°C to +85°C SFB 6-lead SC70 KS-6 ADG741BKS-REEL7 −40°C to +85°C SFB 6-lead SC70 KS-6 ADG741BKSZ-REEL2
−40°C to +85°C S00 6-lead SC70 KS-6 ADG741BKSZ5-REEL2 −40°C to +85°C S00 5-lead SC70 KS-5 ADG741BKSZ5-REEL72 −40°C to +85°C S00 5-lead SC70 KS-5 ADG742BKS-R2 −40°C to +85°C SGB 6-lead SC70 KS-6 ADG742BKS-REEL −40°C to +85°C SGB 6-lead SC70 KS-6 ADG742BKS-REEL7 −40°C to +85°C SGB 6-lead SC70 KS-6 ADG742BKSZ-R22 −40°C to +85°C S01 6-lead SC70 KS-6 ADG742BKSZ-REEL2 −40°C to +85°C S01 6-lead SC70 KS-6 ADG742BKSZ-REEL72 −40°C to +85°C S01 6-lead SC70 KS-6 ADG742BKSZ5-REEL2 −40°C to +85°C S01 5-lead SC70 KS-5 ADG742BKSZ5-REEL72 −40°C to +85°C S01 5-lead SC70 KS-5
1
Brand on these packages is limited to three characters due to space constraints.
2
Z = Pb-free part.
1
Package Description Package Option
Rev. A | Page 11 of 12
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NOTES
©2005 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.
C02076–0–3/05(A)
Rev. A | Page 12 of 12
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