Analog Devices ADG736 a Datasheet

CMOS Low Voltage

2.5 ⍀ Dual SPDT Switch
ADG736

FEATURES

1.8 V to 5.5 V Single Supply

2.5 ⍀ (Typ) On Resistance
Low On Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
10-Lead MSOP Package
Fast Switching Times

16 ns

t

ON

t

8 ns

OFF

Typical Power Consumption (<0.01 ␮W)
TTL/CMOS Compatible

APPLICATIONS
USB 1.1 Signal Switching Circuits
Cell Phones
PDAs
Battery-Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Audio and Video Switching
Mechanical Reed Relay Replacement

GENERAL DESCRIPTION

The ADG736 is a monolithic device comprised of two indepen­dently selectable CMOS SPDT switches. These switches are
designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance,
low leakage currents, and wide input signal bandwidth.

The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.

The ADG736 can operate from a single 1.8 V to 5.5 V
supply, making it ideally suited to portable and battery-powered
instruments.

Each switch conducts equally well in both directions when
on and each has an input signal range that extends to the
power supplies. The ADG736 exhibits break-before-make
switching action.

The ADG736 is available in a 10-lead MSOP package.

FUNCTIONAL BLOCK DIAGRAM

S1A

S1B

IN1

S2A

S2B

IN2

SWITCHES SHOWN FOR A LOGIC 1 INPUT

PRODUCT HIGHLIGHTS

ADG736

D1

D2

1. 1.8 V to 5.5 V Single-Supply Operation.
The ADG736 offers high performance, including low on
resistance and fast switching times and is fully specified and
guaranteed with 3 V and 5 V supply rails.

2. Very Low R
At supply voltage of 1.8 V, R

(4.5 Ω Max at 5 V, 8 Ω Max at 3 V).

ON

is typically 35 Ω over the

ON

temperature range.

3. Low On Resistance Flatness.

4. –3 dB Bandwidth >200 MHz.

5. Low Power Dissipation.
CMOS construction ensures low power dissipation.

6. Fast t

ON/tOFF

.

7. Break-Before-Make Switching Action.

8. 10-Lead MSOP Package.

REV. A

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use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
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Tel: [phone] www.analog.com
Fax: [phone] © 2003 Analog Devices, Inc. All rights reserved.

(VDD = 5 V ⴞ 10%, GND = 0 V. All Specifications –40ⴗC to +85ⴗC, unless otherwise

ADG736–SPECIFICATIONS

1

noted.)

B Version

–40ⴗC to

Parameter 25ⴗC +85ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

) 2.5 Ω typ VS = 0 V to VDD, IDS = –10 mA;

ON

DD

V

4 4.5 Ω max Test Circuit 1

On Resistance Match between

Channels (∆R

) 0.1 Ω typ VS = 0 V to VDD, IDS = –10 mA

ON

0.4 Ω max

On Resistance Flatness (R

FLAT (ON)

) 0.5 Ω typ VS = 0 V to VDD, IDS = –10 mA

1.2 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;

S

= 5.5 V

DD

± 0.1 ± 0.3 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ± 0.01 nA typ VS = VD = 1 V or 4.5 V;

D

± 0.1 ± 0.3 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

± 0.1 µA max

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-before-Make Time Delay, t

Off Isolation –62 dB typ R

2

12 ns typ RL = 300 Ω, CL = 35 pF

16 ns max V

= 3 V; Test Circuit 4

S

5 ns typ RL = 300 Ω, CL = 35 pF

8 ns max V

D

7 ns typ RL = 300 Ω, CL = 35 pF

1 ns min V

–82 dB typ R

= 3 V; Test Circuit 4

S

= VS2 = 3 V; Test Circuit 5

S1

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 6

Channel-to-Channel Crosstalk –62 dB typ R

–82 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 7

Bandwidth –3 dB 200 MHz typ R

(OFF) 9 pF typ

C

S

= 50 Ω, CL = 5 pF; Test Circuit 8

L

CD, CS (ON) 32 pF typ

POWER REQUIREMENTS V

= 5.5 V

DD

Digital Inputs = 0 V or 5 V

I

DD

0.001 µA typ

1.0 µA max

NOTES

1

Temperature range is –40°C to +85°C for the B Version.

2

Guaranteed by design not subject to production test.

Specifications subject to change without notice.

–2–

REV. A

ADG736

1

SPECIFICATIONS

Parameter 25ⴗC +85ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

On Resistance Match between

Channels (∆R

On Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-before-Make Time Delay, t

Off Isolation –62 dB typ R

Channel-to-Channel Crosstalk –62 dB typ R

Bandwidth –3 dB 200 MHz typ R
C

(OFF) 9 pF typ

S

CD, CS (ON) 32 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature range is –40°C to +85°C for the B Version.

2

Guaranteed by design not subject to production test.

Specifications subject to change without notice.

)55.5 Ω typ VS = 0 V to VDD, IDS = –10 mA;

ON

) 0.1 Ω typ VS = 0 V to VDD, IDS = –10 mA

ON

(OFF) ± 0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

S

, IS (ON) ± 0.01 nA typ VS = VD = 1 V or 3 V;

D

INH

INL

(VDD = 3 V ⴞ 10%, GND = 0 V. All Specifications –40ⴗC to +85ⴗC, unless otherwise noted.)

B Version

–40ⴗC to

V

DD

8 Ω max Test Circuit 1

0.4 Ω max

FLAT (ON)

) 2.5 Ω typ VS = 0 V to VDD, IDS = –10 mA

= 3.3 V

DD

± 0.1 ± 0.3 nA max Test Circuit 2

± 0.1 ± 0.3 nA max Test Circuit 3

2.0 V min

0.4 V max

0.005 µA typ VIN = V

INL

or V

± 0.1 µA max

2

14 ns typ RL = 300 Ω, CL = 35 pF

20 ns max V

= 2 V; Test Circuit 4

S

6 ns typ RL = 300 Ω, CL = 35 pF

10 ns max V

D

7 ns typ RL = 300 Ω, CL = 35 pF

1 ns min V

–82 dB typ R

= 2 V; Test Circuit 4

S

= VS2 = 2 V; Test Circuit 5

S1

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 6

= 50 Ω, CL = 5 pF, f = 10 MHz

–82 dB typ R

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 7

= 50 Ω, CL = 5 pF; Test Circuit 8

L

= 3.3 V

DD

Digital Inputs = 0 V or 3 V

0.001 µA typ

1.0 µA max

INH

REV. A

–3–