Analog Devices ADG733BRU, ADG733BRQ, ADG734BRU Datasheet

CMOS, 2.5  Low Voltage,

a

FEATURES

1.8 V to 5.5 V Single Supply
3 V Dual Supply

2.5  On Resistance

0.5  On Resistance Flatness
100 pA Leakage Currents
19 ns Switching Times
Triple SPDT: ADG733
Quad SPDT: ADG734
Small TSSOP and QSOP Packages
Low Power Consumption
TTL/CMOS-Compatible Inputs

APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems

S1B

S1A

S2A

S2B

Triple/Quad SPDT Switches

ADG733/ADG734

FUNCTIONAL BLOCK DIAGRAMS

ADG733

D1

D2

LOGIC

A2

A0

A1

EN

SWITCHES SHOWN FOR A “1” INPUT LOGIC

S3A

D3

S3B

S1A

S1B

IN1

IN2

S2B

S2A

S4A

D1

ADG734

D2

D2

S4B

IN4

IN3

S3B

D3

S3A

GENERAL DESCRIPTION

The ADG733 and ADG734 are low voltage, CMOS devices
comprising three independently selectable SPDT (single pole,
double throw) switches and four independently selectable SPDT
switches respectively.

Low power consumption and operating supply range of 1.8 V to

5.5 V and dual ±3 V make the ADG733 and ADG734 ideal for
battery powered, portable instruments. All channels exhibit
break-before-make switching action preventing momentary
shorting when switching channels. An EN input on the ADG733
is used to enable or disable the device. When disabled, all chan­nels are switched OFF.

These 2–1 multiplexers/SPDT switches are designed on an
enhanced submicron process that provides low power dissipation
yet gives high switching speed, very low on resistance, high signal
bandwidths and low leakage currents. On resistance is in the region
of a few ohms, is closely matched between switches and very flat
over the full signal range. These parts can operate equally well
in either direction and have an input signal range which extends
to the supplies.

The ADG733 is available in small TSSOP and QSOP packages,
while the ADG734 is available in a small TSSOP package.

PRODUCT HIGHLIGHTS

1. Single/Dual Supply Operation. The ADG733 and ADG734 are
fully specified and guaranteed with 3 V and 5 V single supply
rails and ± 3 V dual supply rails.

2. Low On Resistance (2.5 Ω typical).

3. Low Power Consumption (<0.01 µW).

4. Guaranteed Break-Before-Make Switching Action.

REV. 0

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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
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Fax: [phone] © Analog Devices, Inc., 2001

1

ADG733/ADG734–SPECIFICATIONS

(VDD = 5 V  10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)

B Version

–40C

Parameter 25C to +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

) 2.5 Ω typ VS = 0 V to VDD, IDS = 10 mA;

ON

DD

V

4.5 5.0 Ω max Test Circuit 1

On-Resistance Match between 0.1 Ω typ V

Channels (∆R

On-Resistance Flatness (R

) 0.4 Ω max

ON

FLAT(ON)

) 0.5 Ω typ VS = 0 V to VDD, IDS = 10 mA

= 0 V to VDD, IDS = 10 mA

S

1.2 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ± 0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;

S

= 5.5 V

DD

± 0.1 ± 0.3 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA typ VD = VS = 1 V, or 4.5 V;

D

± 0.1 ± 0.5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

± 0.1 µA max

CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

ADG733 t

(EN) 20 ns typ RL = 300 Ω, CL = 35 pF;

ON

(EN) 7 ns typ RL = 300 Ω, CL = 35 pF;

t

OFF

Break-Before-Make Time Delay, t

Charge Injection ± 3 pC typ V

2

19 ns typ RL = 300 Ω, CL = 35 pF;

34 ns max V

= 3 V, Test Circuit 4

S

7 ns typ RL = 300 Ω, CL = 35 pF;

12 ns max V

40 ns max V

12 ns max V

D

13 ns typ RL = 300 Ω, CL = 35 pF;

1 ns min V

= 3 V, Test Circuit 4

S

= 3 V, Test Circuit 5

S

= 3 V, Test Circuit 5

S

= 3 V, Test Circuit 6

S

= 2 V, RS = 0 Ω, CL = 1 nF;

S

Test Circuit 7

Off Isolation –62 dB typ R

–82 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz;

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 8

Channel-to-Channel Crosstalk –62 dB typ R

–82 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz;

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9
–3 dB Bandwidth 200 MHz typ R
C

(OFF) 11 pF typ

S

= 50 Ω, CL = 5 pF, Test Circuit 8

L

CD, CS (ON) 34 pF typ

POWER REQUIREMENTS V

I

DD

0.001 µA typ Digital Inputs = 0 V or 5.5 V

= 5.5 V

DD

1.0 µA max

NOTES

1

Temperature range is as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–2–

REV. 0

1

ADG733/ADG734

SPECIFICATIONS

Parameter 25C to +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

On-Resistance Match between 0.1 Ω typ V

Channels (∆R

On-Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

ADG733 t

t

ON

OFF

Break-Before-Make Time Delay, t

Charge Injection ± 3 pC typ V

Off Isolation –62 dB typ R

Channel-to-Channel Crosstalk –62 dB typ R

–3 dB Bandwidth 200 MHz typ R
C

(OFF) 11 pF typ

S

CD, CS (ON) 34 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)6 Ω typ VS = 0 V to VDD, IDS = 10 mA;

ON

) 0.4 Ω max

ON

(OFF) ± 0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

S

, IS (ON) ±0.01 nA typ VS = VD = 1 V or 3 V;

D

INH

INL

(EN) 29 ns typ RL = 300 Ω, CL = 35 pF;

(EN) 9 ns typ RL = 300 Ω, CL = 35 pF;

(VDD = 3 V  10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)

B Version

–40C

V

DD

11 12 Ω max Test Circuit 1

FLAT(ON)

)3Ω typ VS = 0 V to VDD, IDS = 10 mA

± 0.1 ± 0.3 nA max Test Circuit 2

± 0.1 ± 0.5 nA max Test Circuit 3

2.0 V min

0.4 V max

0.005 µA typ VIN = V
± 0.1 µA max

2

28 ns typ RL = 300 Ω, CL = 35 pF;

55 ns max V

9 ns typ RL = 300 Ω, CL = 35 pF;

16 ns max V

60 ns max V

16 ns max V

D

22 ns typ RL = 300 Ω, CL = 35 pF;

1 ns min V

–82 dB typ R

–82 dB typ R

0.001 µA typ Digital Inputs = 0 V or 3.3 V

1.0 µA max

= 0 V to VDD, IDS = 10 mA

S

= 3.3 V

DD

or V

INL

= 2 V, Test Circuit 4

S

= 2 V, Test Circuit 4

S

= 2 V, Test Circuit 5

S

= 2 V, Test Circuit 5

S

= 2 V, Test Circuit 6

S

= 1 V, RS = 0 Ω, CL = 1 nF;

S

INH

Test Circuit 7

= 50 Ω, CL = 5 pF, f = 10 MHz;

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 8

= 50 Ω, CL = 5 pF, f = 10 MHz;

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9

= 50 Ω, CL = 5 pF, Test Circuit 8

L

= 3.3 V

DD

REV. 0

–3–

ADG733/ADG734–SPECIFICATIONS

1

DUAL SUPPLY

(VDD = +3 V  10%, VSS = –3 V  10%, GND = 0 V, unless otherwise noted.)

B Version

–40C

Parameter 25C to +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range V
On Resistance (R

) 2.5 Ω typ VS = VSS to VDD, IDS = 10 mA;

ON

SS

to V

DD

V

4.5 5.0 Ω max Test Circuit 1

On-Resistance Match between 0.1 Ω typ V

Channels (∆R

On-Resistance Flatness (R

) 0.4 Ω max

ON

FLAT(ON)

) 0.5 Ω typ VS = VSS to VDD, IDS = 10 mA

= VSS to VDD, IDS = 10 mA

S

1.2 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ± 0.01 nA typ

S

= +3.3 V, VSS = –3.3 V

DD

VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;

± 0.1 ± 0.3 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA typ

D

VS = VD = +2.25 V/–1.25 V, Test Circuit 3

± 0.1 ± 0.5 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.0 V min

0.4 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

± 0.1 µA max

CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

ADG733 t

(EN) 21 ns typ RL = 300 Ω, CL = 35 pF;

ON

(EN) 10 ns typ RL = 300 Ω, CL = 35 pF;

t

OFF

Break-Before-Make Time Delay, t

Charge Injection ± 5 pC typ V

2

21 ns typ RL = 300 Ω, CL = 35 pF;

35 ns max V

= 1.5 V, Test Circuit 4

S

10 ns typ RL = 300 Ω, CL = 35 pF;

16 ns max V

40 ns max V

16 ns max V

D

13 ns typ RL = 300 Ω, CL = 35 pF;

1 ns min V

= 1.5 V, Test Circuit 4

S

= 1.5 V, Test Circuit 5

S

= 1.5 V, Test Circuit 5

S

= 1.5 V, Test Circuit 6

S

= 0 V, RS = 0 Ω, CL = 1 nF;

S

Test Circuit 7

Off Isolation –62 dB typ R

–82 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz;

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 8

Channel-to-Channel Crosstalk –62 dB typ R

–82 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz;

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9
–3 dB Bandwidth 200 MHz typ R
C

(OFF) 11 pF typ

S

= 50 Ω, CL = 5 pF, Test Circuit 8

L

CD, CS (ON) 34 pF typ

POWER REQUIREMENTS V

I

DD

0.001 µA typ Digital Inputs = 0 V or 3.3 V

= 3.3 V

DD

1.0 µA max

I

SS

0.001 µA typ VSS = –3.3 V

1.0 µA max Digital Inputs = 0 V or 3.3 V

NOTES

1

Temperature range is as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–4–

REV. 0