Analog Devices ADG732BSU, ADG732BCP, ADG726BSU, ADG726BCP Datasheet

PRELIMINARY TECHNICAL DA T A

=

1.8 V to 5.5 V, ±2.5 V, Analog Multiplexers

Preliminary Technical Data

FEATURES

1.8 V to 5.5 V Single Supply
±2.5 V Dual Supply Operation

ΩΩ

3.5

Ω On Resistance

ΩΩ
ΩΩ

0.5

Ω On Resistance Flatness

ΩΩ

Rail to Rail Operation
30ns Switching Times
Single 32 to 1 Channel Multiplexer
Dual/Differential 16 to 1 Channel Multiplexer
TTL/CMOS Compatible Inputs
For Functionally Equivalent devices with Serial Interface

See ADG725/ADG731

APPLICATIONS
Optical Applications
Data Acquisition Systems
Communication Systems
Relay replacement
Audio and Video Switching
Battery Powered Systems
Medical Instrumentation
Automatic Test Equipment

S32

WR

CS

16-/32- Channel, 3.5

ΩΩ

Ω

ΩΩ

ADG726/ADG732

FUNCTIONAL BLOCK DIAGRAMS

ADG732

S1

1 OF 32

DECODER

EN

A2 A4

A0

A3

A1

S1A

S16A

D

S1B

S16B

WR

CSA

CSB

ADG726

A1

A0

1 OF 16

DECODER

A2

DA

DB

A3

EN

GENERAL DESCRIPTION

The ADG726/ADG732 are monolithic CMOS 32
channel/dual 16 channel analog multiplexers. The
ADG732 switches one of thirty-two inputs (S1-S32) to a
common output, D, as determined by the 5-bit binary
address lines A0, A1, A2, A3 and A4. The ADG726
switches one of sixteen inputs as determined by the four
bit binary address lines, A0, A1, A2 and A3.

On chip latches facilitate microprocessor interfacing. The
ADG726 device may also be configured for differential
operation by tying CSA and CSB together. An EN input
is used to enable or disable the devices. When disabled, all
channels are switched OFF.

These multiplexers are designed on an enhanced submi­cron process that provides low power dissipation yet gives
high switching speed, very low on resistance and leakage
currents. They operate from single supply of 1.8V to 5.5V
and ±2.5 V dual supply, making them ideally suited to a
variety of applications. On resistance is in the region of a
few Ohms and is closely matched between switches and
very flat over the full signal range. These parts can operate
equally well as either Multiplexers or De-Multiplexers

and have an input signal range which extends to the sup­plies. In the OFF condition, signal levels up to the
supplies are blocked. All channels exhibit break before
make switching action preventing momentary shorting
when switching channels.

They are available in either 48 lead LFCSP or TQFP
package.

PRODUCT HIGHLIGHTS

1. +1.8 V to +5.5 V Single or ±2.5 V Dual Supply
operation. These parts are specified and guaranteed
with +5 V ±10%, +3 V ±10% single supply and
±2.5 V ±10% dual supply rails.

2. On Resistance of 3.5 Ω.

3. Guaranteed Break-Before-Make Switching Action.

4. 7mm x 7mm 48 lead LF Chip Scale Package (CSP)
or 48 lead TQFP package.

REV. PrD 2001

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] Analog Devices, Inc., 2001

PRELIMINARY TECHNICAL DA T A

1

ADG726/ADG732–SPECIFICATIONS

B Version

–40°C

Parameter +25oC to +85°C Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

On-Resistance Match Between 0.3 Ω typ V
Channels (∆R
On-Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 5 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

t

(EN, WR) 32 ns typ R

ON

(EN) 10 ns typ R

t

OFF

Charge Injection ±5 pC typ V

Off Isolation -60 dB typ R

Channel to Channel Crosstalk -60 dB typ R

-3 dB Bandwidth 10 MHz typ R
(OFF) 13 pF typ f = 1 MHz

C

S

C

(OFF)

D

ADG726 180 pF typ f = 1 MHz
ADG732 360 pF typ f = 1 MHz

, CS (ON)

C

D

ADG726 200 pF typ f = 1 MHz
ADG732 400 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature range is as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

) 3.5 Ω typ V

ON

5.5 6 Ω max Test Circuit 1

) 0.8 Ω max

ON

FLAT(ON)

) 0.5 Ω typ V

1.2 Ω max

(OFF) ±0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;

S

±0.5 ±5 nA max Test Circuit 2

(OFF) ±0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;

D

±0.5 ±5 nA max Test Circuit 3

, IS (ON) ±0.01 nA typ VD = VS = 1 V, or 4.5V;

D

±1 ±10 nA max Test Circuit 4

INH

INL

2.4 V min

0.8 V max

0.005 µA typ VIN = V
±0.1 µA max

2

40 ns typ R

60 ns max V

30 ns typ R

D

1 ns min V

50 ns max V

14 ns max V

10 µA typ Digital Inputs = 0 V or +5.5 V

20 µA max

(VDD = 5V ± 10%, VSS = 0V, GND = 0 V, unless otherwise noted)

V

DD

= 0 V to VDD, IDS = 10 mA;

S

= 0 V to V

S

= 0 V to VDD, IDS = 10 mA

S

= 5.5 V

DD

INL

= 300 Ω, C

L

= 3 V/0 V, V

S1

= 300 Ω, C

L

= 3 V, Test Circuit 6

S

= 300 Ω, C

L

= 3 V, Test Circuit 7

S

= 300 Ω, C

L

= 3 V, Test Circuit 8

S

= 0 V, R

S

, IDS = 10 mA

DD

or V

INH

= 35 pF,Test Circuit 5;

L

= 0 V/3V

S32

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

S

= 1 nF;

L

Test Circuit 9

= 50 Ω, C

L

= 5 pF, f = 100 kHz;

L

Test Circuit 10

= 50 Ω, C

L

= 5 pF, f = 100 kHz;

L

Test Circuit 11

= 50 Ω, C

L

= +5.5 V

DD

= 5 pF, Test Circuit 10

L

–2– REV. PrD

PRELIMINARY TECHNICAL DA T A

ADG726/ADG732

1

SPECIFICATIONS

Parameter +25oC to +85°C Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

On-Resistance Match Between 0.4 Ω typ V
Channels (∆R
On-Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 5 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

t

(EN, WR) 40 ns typ R

ON

t

(EN) 20 ns typ R

OFF

Charge Injection ±5 pC typ V

Off Isolation -60 dB typ R

Channel to Channel Crosstalk -60 dB typ R

-3 dB Bandwidth 10 MHz typ R
C

(OFF) 13 pF typ f = 1 MHz

S

C

(OFF)

D

ADG726 180 pF typ f = 1 MHz
ADG732 360 pF typ f = 1 MHz

, CS (ON)

C

D

ADG726 200 pF typ f = 1 MHz
ADG732 400 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)6 Ω typ V

ON

) 1.2 Ω max

ON

D

D

INH

INL

(VDD = 3V ± 10%, VSS = 0V, GND = 0 V, unless otherwise noted)

B Version

–40°C

V

DD

= 0 V to VDD, IDS = 10 mA;

S

11 12 Ω max Test Circuit 1

= 0 V to V

S

FLAT(ON)

(OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

S

)3Ω max V

= 0 V to VDD, IDS = 10 mA

S

= 3.3 V

DD

, IDS = 10 mA

DD

±1 ±5 nA max Test Circuit 2

(OFF) ±0.01 nA typ VS = 1 V/3 V, VD = 3 V/1 V;

±1 ±5 nA max Test Circuit 3

, IS (ON) ±0.01 nA typ VS = VD = +1 V or +3 V;

±1 ±10 nA max Test Circuit 4

2.0 V min

0.8 V max

0.005 µA typ VIN = V

INL

or V

INH

±0.1 µA max

2

45 ns typ R

75 ns max V

30 ns typ R

D

1 ns min V

70 ns max V

28 ns max V

= 300 Ω, C

L

= 2 V/0 V, V

S1

= 300 Ω, C

L

= 2 V, Test Circuit 6

S

= 300 Ω, C

L

= 2 V, Test Circuit 7

S

= 300 Ω, C

L

= 2 V, Test Circuit 8

S

= 0 V, R

S

= 35 pF Test Circuit 5

L

= 0 V/2 V

S32

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

S

= 1 nF;

L

Test Circuit 9

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

L

Test Circuit 10

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

L

Test Circuit 11

= 50 Ω, C

L

= +3.3 V

DD

= 5 pF, Test Circuit 10

L

10 µA typ Digital Inputs = 0 V or +3.3 V

20 µA max

–3–REV. PrD

PRELIMINARY TECHNICAL DA T A

1

ADG726/ADG732–SPECIFICATIONS

(VDD = +2.5 V ±10%, VSS = -2.5 V ±10%, GND = 0 V, unless otherwise noted)

B Version

–40°C

Parameter +25oC to +85°C Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VSS to V
On-Resistance (R

On-Resistance Match Between 0.3 Ω typ V
Channels (∆R
On-Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 5 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

t

(EN, WR) 32 ns typ R

ON

(EN) 16 ns typ R

t

OFF

Charge Injection ±8 pC typ V
Off Isolation -60 dB typ R

Channel to Channel Crosstalk -60 dB typ R

-3 dB Bandwidth 10 MHz typ R
C

(OFF) 13 pF typ

S

(OFF)

C

D

ADG726 180 pF typ f = 1 MHz
ADG732 360 pF typ f = 1 MHz

, CS (ON)

C

D

ADG726 200 pF typ f = 1 MHz
ADG732 400 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

I

SS

NOTES

1

Temperature range is as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

) 3.5 Ω typ V

ON

5.5 6 Ω max Test Circuit 1

) 0.8 Ω max

ON

FLAT(ON)

) 0.5 Ω typ V

1.2 Ω max

(OFF) ±0.01 nA typ

S

±1 ±5 nA max Test Circuit 2

(OFF) ±0.01 nA typ

D

±1 ±5 nA max Test Circuit 3

, IS (ON) ±0.01 nA typ

D

±1 ±10 nA max

INH

INL

1.7 V min

0.7 V max

0.005 µA typ VIN = V
±0.1 µA max

2

40 ns typ R

60 ns max V

15 ns typ R

D

1 ns min V

50 ns max V

26 ns max V

10 µA typ Digital Inputs = 0 V or +2.75 V

20 µA max

10 µA typ VSS = -2.75 V

20 µA max Digital Inputs = 0 V or +2.75 V

Dual Supply

DD

V

= VSS to VDD, IDS = 10 mA;

S

= VSS to VDD, IDS = 10 mA

S

= VSS to VDD, IDS = 10 mA

S

= +2.75 V, VSS = -2.75 V

DD

VS = +2.25 V/-1.25 V, VD = -1.25 V/+2.25 V;

VS = +2.25 V/-1.25 V, VD = -1.25 V/+2.25 V;

VS = VD = +2.25 V/-1.25 V, Test Circuit 4

or V

INL

= 300 Ω, C

L

= 1.5 V/0 V,V

S1

= 300 Ω, C

L

= 1.5 V, Test Circuit 6

S

= 300 Ω, C

L

= 1.5 V, Test Circuit 7

S

= 300 Ω, C

L

= 1.5 V, Test Circuit 8

S

= 0 V, R

S

= 50 Ω, C

L

INH

= 35 pF Test Circuit 5

L

= 0 V/1.5 V

S32

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

S

= 5 pF, f = 1 MHz;

L

= 1 nF; Test 9

L

Test Circuit 10

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

L

Test Circuit 11

= 50 Ω, C

L

= +2.75 V

DD

= 5 pF, Test Circuit 10

L

–4– REV. PrD