Analog Devices ADG723, ADG722, ADG721 Datasheet
REV. 0
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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
ADG721/ADG722/ADG723
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1998
CMOS
Low Voltage 4 V Dual SPST Switches
FUNCTIONAL BLOCK DIAGRAMS
ADG721
IN1
D2
S2
S1
D1
IN2
ADG722
IN1
D2
S2
S1
D1
IN2
ADG723
IN1
D2
S2
S1
D1
IN2
SWITCHES SHOWN FOR A LOGIC "0" INPUT
FEATURES
+1.8 V to +5.5 V Single Supply
4 V (Max) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
8-Lead mSOIC Package
Fast Switching Times
t
ON
20 ns
t
OFF
10 ns
Low Power Consumption (<0.1 mW)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
The ADG721, ADG722 and ADG723 are monolithic CMOS
SPST switches. These switches are designed on an advanced
submicron process that provides low power dissipation yet gives
high switching speed, low On resistance and low leakage currents.
The ADG721, ADG722 and ADG723 are designed to operate
from a single +1.8 V to +5.5 V supply, making them ideal for
use in battery powered instruments and with the new generation
of DACs and ADCs from Analog Devices.
The ADG721, ADG722 and ADG723 contain two independent
single-pole/single-throw (SPST) switches. The ADG721 and
ADG722 differ only in that both switches are normally open and
normally closed respectively. While in the ADG723, Switch 1 is
normally open and Switch 2 is normally closed.
Each switch of the ADG721, ADG722 and ADG723 conducts
equally well in both directions when on. The ADG723 exhibits
break-before-make switching action.
PRODUCT HIGHLIGHTS
1. +1.8 V to +5.5 V Single Supply Operation. The ADG721,
ADG722 and ADG723 offers high performance, including
low on resistance and fast switching times and is fully specified and guaranteed with +3 V and +5 V supply rails.
2. Very Low R
ON
(4 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
operation, R
ON
is typically 40 Ω over the temperature range.
3. Low On-Resistance Flatness.
4. –3 dB Bandwidth >200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. Fast t
ON/tOFF.
7. 8-Lead µSOIC.
–2– REV. 0
ADG721/ADG722/ADG723–SPECIFICATIONS
1
B Version
–408C to
Parameter +258C +858C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
)45 Ω max V
S
= 0 V to VDD, IS = –10 mA,
Test Circuit 1
On Resistance Match Between
Channels (∆R
ON
) 0.3 Ω typ V
S
= 0 V to VDD, IS = –10 mA
1.0 Ω max
On-Resistance Flatness (R
FLAT(ON)
) 0.85 Ω typ V
S
= 0 V to VDD, IS = –10 mA
1.5 Ω max
LEAKAGE CURRENTS V
DD
= +5.5 V
Source OFF Leakage I
S
(OFF) ±0.01 nA typ V
S
= 4.5 V/1 V, VD = 1 V/4.5 V
±0.25 ±0.35 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 nA typ V
S
= 4.5 V/1 V, VD = 1 V/4.5 V
±0.25 ±0.35 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.01 nA typ V
S
= VD = 1 V, or VS = VD = 4.5 V
±0.25 ±0.35 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
14 ns typ R
L
= 300 Ω, C
L
= 35 pF
20 ns max V
S
= 3 V, Test Circuit 4
t
OFF
6 ns typ R
L
= 300 Ω, C
L
= 35 pF
10 ns max V
S
= 3 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
7 ns typ R
L
= 300 Ω, C
L
= 35 pF,
(ADG723 Only) 1 ns min V
S1
= VS2 = 3 V, Test Circuit 5
Charge Injection 2 pC typ V
S
= 2 V; R
S
= 0 Ω, C
L
= 1 nF,
Test Circuit 6
Off Isolation –60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
Channel-to-Channel Crosstalk –77 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–97 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
Test Circuit 8
Bandwidth –3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF, Test Circuit 9
C
S
(OFF) 7 pF typ
C
D
(OFF) 7 pF typ
CD, CS (ON) 18 pF typ
POWER REQUIREMENTS V
DD
= +5.5 V
Digital Inputs = 0 V or 5 V
I
DD
0.001 µA typ
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +5 V 6 10%, GND = 0 V. All specifications –408C to +858C, unless otherwise noted.)
–3–REV. 0
ADG721/ADG722/ADG723
(VDD = +3 V 6 10%, GND = 0 V. All specifications –408C to +858C, unless otherwise noted.)
SPECIFICATIONS
1
B Version
–408C to
Parameter +258C +858C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 6.5 Ω typ V
S
= 0 V to VDD, IS = –10 mA
10 Ω max Test Circuit 1
On Resistance Match Between
Channels (∆R
ON
) 0.3 Ω typ V
S
= 0 V to VDD, IS = –10 mA
1.0 Ω max
On-Resistance Flatness (R
FLAT(ON)
) 3.5 Ω typ V
S
= 0 V to VDD, IS = –10 mA
LEAKAGE CURRENTS V
DD
= +3.3 V
Source OFF Leakage I
S
(OFF) ±0.01 nA typ V
S
= 3 V/1 V, VD = 1 V/3 V
±0.25 ±0.35 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 nA typ V
S
= 3 V/1 V, VD = 1 V/3 V
±0.25 ±0.35 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.01 nA typ V
S
= VD = 1 V, or 3 V
±0.25 ±0.35 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.4 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
16 ns typ R
L
= 300 Ω, C
L
= 35 pF
24 ns max V
S
= 2 V, Test Circuit 4
t
OFF
7 ns typ R
L
= 300 Ω, C
L
= 35 pF
11 ns max V
S
= 2 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
7 ns typ R
L
= 300 Ω, C
L
= 35 pF,
(ADG723 Only) 1 ns min V
S1
= VS2 = 2 V, Test Circuit 5
Charge Injection 2 pC typ V
S
= 1.5 V; R
S
= 0 Ω, C
L
= 1 nF,
Test Circuit 6
Off Isolation –60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
Channel-to-Channel Crosstalk –77 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–97 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz,
Test Circuit 8
Bandwidth –3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF,
Test Circuit 9
C
S
(OFF) 7 pF typ
C
D
(OFF) 7 pF typ
CD, CS (ON) 18 pF typ
POWER REQUIREMENTS V
DD
= +3.3 V
Digital Inputs = 0 V or 3 V
I
DD
0.001 µA typ
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
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