Analog Devices ADG721 2 3 a Datasheet

CMOS

FEATURES

1.8 V to 5.5 V Single Supply 4  (Max) On Resistance Low On Resistance Flatness –3 dB Bandwidth >200 MHz Rail-to-Rail Operation 8-Lead MSOP Package Fast Switching Times

20 ns

10 ns

OFF

Low Power Consumption (<0.1 W) TTL/CMOS Compatible

APPLICATIONS USB 1.1 Signal Switching Circuits Cell Phones PDAs Battery-Powered Systems Communication Systems Sample Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement

Low Voltage 4  Dual SPST Switches

ADG721/ADG722/ADG723

FUNCTIONAL BLOCK DIAGRAMS

IN2

ADG721

IN2

SWITCHES SHOWN FOR A LOGIC "0" INPUT

IN1

ADG723

IN2

ADG722

IN1

GENERAL DESCRIPTION

The ADG721, ADG722, and ADG723 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents.

The ADG721, ADG722, and ADG723 are designed to operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices.

The ADG721, ADG722, and ADG723 contain two independent single-pole/single-throw (SPST) switches. The ADG721 and ADG722 differ only in that both switches are normally open and normally closed, respectively. While in the ADG723, Switch 1 is normally open and Switch 2 is normally closed.

Each switch of the ADG721, ADG722, and ADG723 conducts equally well in both directions when on. The ADG723 exhibits break-before-make switching action.

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PRODUCT HIGHLIGHTS

1. 1.8 V to 5.5 V Single-Supply Operation.

The ADG721, ADG722, and ADG723 offer high performance, including low on resistance and fast switching times, and are fully specified and guaranteed with 3 V and 5 V supply rails.

2. Very Low R

At 1.8 V operation, R

(4 W max at 5 V, 10 W max at 3 V).

is typically 40 W over the tempera-

ture range.

3. Low On Resistance Flatness.

4. –3 dB Bandwidth > 200 MHz.

5. Low Power Dissipation.

CMOS construction ensures low power dissipation.

6. Fast t

ON/tOFF

7. 8-Lead MSOP.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

ADG721/ADG722/ADG723–SPECIFICATIONS

(VDD = 5 V  10%, GND = 0 V. All specifications –40C to +85C, unless otherwise noted.)

B Version

–40C to

Parameter +25C +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V On Resistance (R

)45 W max VS = 0 V to VDD, IS = –10 mA,

On Resistance Match between

Channels (DR

) 0.3 W typ VS = 0 V to VDD, IS = –10 mA

1.0 W max

On Resistance Flatness (R

FLAT(ON)

)0.85 W typ VS = 0 V to VDD, IS = –10 mA

1.5 W max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V

±0.25 ±0.35 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V

±0.25 ±0.35 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 4.5 V

±0.25 ±0.35 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

INL

or I

INH

0.005 mA typ VIN = V ±0.1 mA max

DYNAMIC CHARACTERISTICS

14 ns typ RL = 300 W, CL = 35 pF

20 ns max V

OFF

6 ns typ RL = 300 W, CL = 35 pF

10 ns max V

Break-Before-Make Time Delay, t

7 ns typ RL = 300 W, CL = 35 pF,

(ADG723 Only) 1 ns min V

Charge Injection 2 pC typ V

Off Isolation –60 dB typ R

–80 dB typ R

Channel-to-Channel Crosstalk –77 dB typ R

–97 dB typ R

Bandwidth –3 dB 200 MHz typ R C

(OFF) 7 pF typ

CD, CS (ON) 18 pF typ

POWER REQUIREMENTS V

0.001 mA typ

1.0 mA max

NOTES

Temperature range: B Version, –40∞C to +85∞C.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

Test Circuit 1

= 5.5 V

or V

INL

= 3 V, Test Circuit 4

= VS2 = 3 V, Test Circuit 5

= 2 V; RS = 0 W, CL = 1 nF,

INH

Test Circuit 6

= 50 W, CL = 5 pF, f = 10 MHz

= 50 W, CL = 5 pF, f = 1 MHz,

Test Circuit 7

= 50 W, CL = 5 pF, f = 10 MHz

= 50 W, CL = 5 pF, f = 1 MHz,

Test Circuit 8

= 50 W, CL = 5 pF, Test Circuit 9

= 5.5 V

Digital Inputs = 0 V or 5 V

–2–

REV. A

ADG721/ADG722/ADG723

SPECIFICATIONS

Parameter +25C +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V On Resistance (R

On Resistance Match between

Channels (DR

On Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current

or I

INL

INH

DYNAMIC CHARACTERISTICS

OFF

Break-Before-Make Time Delay, t

(ADG723 Only) 1 ns min V

Charge Injection 2 pC typ V

Off Isolation –60 dB typ R

Channel-to-Channel Crosstalk –77 dB typ R

Bandwidth –3 dB 200 MHz typ R

(OFF) 7 pF typ

CD, CS (ON) 18 pF typ

POWER REQUIREMENTS V

NOTES

Temperature range: B Version, –40∞C to +85∞C.

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

) 6.5 W typ VS = 0 V to VDD, IS = –10 mA

) 0.3 W typ VS = 0 V to VDD, IS = –10 mA

(OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V

, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 3 V

INH

INL

(VDD = 3 V  10%, GND = 0 V. All specifications –40C to +85C, unless otherwise noted.)

B Version

–40C to

10 W max Test Circuit 1

1.0 W max

FLAT(ON)

) 3.5 W typ VS = 0 V to VDD, IS = –10 mA

= 3.3 V

±0.25 ±0.35 nA max Test Circuit 2

±0.25 ±0.35 nA max Test Circuit 3

2.0 V min

0.4 V max

0.005 mA typ VIN = V

INL

±0.1 mA max

16 ns typ RL = 300 W, CL = 35 pF

24 ns max V

= 2 V, Test Circuit 4

7 ns typ RL = 300 W, CL = 35 pF

11 ns max V

7 ns typ RL = 300 W, CL = 35 pF,

= 2 V, Test Circuit 4

= VS2 = 2 V, Test Circuit 5

= 1.5 V; RS = 0 W, CL = 1 nF,

Test Circuit 6

= 50 W, CL = 5 pF, f = 10 MHz

–80 dB typ R

= 50 W, CL = 5 pF, f = 1 MHz,

Test Circuit 7

= 50 W, CL = 5 pF, f = 10 MHz

–97 dB typ R

= 50 W, CL = 5 pF, f = 1 MHz,

Test Circuit 8

= 50 W, CL = 5 pF,

Test Circuit 9

= 3.3 V

Digital Inputs = 0 V or 3 V

0.001 mA typ

1.0 mA max

or V

INH

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–3–

ADG721/ADG722/ADG723

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

Analog, Digital Inputs

. . . . . . . . . . –0.3 V to VDD + 0.3 V or

30 mA, Whichever Occurs First

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

MSOP Package, Power Dissipation . . . . . . . . . . . . . . . 450 mW

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C

ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV

NOTES

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.

Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be

limited to the maximum ratings given.

Table I. Truth Table (ADG721/ADG722)

ADG721 In ADG722 In Switch Condition

01OFF 10ON

Table II. Truth Table (ADG723)

Logic Switch 1 Switch 2

0 OFF ON 1ONOFF

ORDERING GUIDE

Model Temperature Range Branding1Package Description Package Option

ADG721BRM –40°C to +85°C S6B MSOP RM-8 ADG721BRM-REEL –40°C to +85°C S6B MSOP RM-8 ADG721BRM-REEL7 –40°C to +85°C S6B MSOP RM-8 ADG721BRMZ ADG721BRMZ-REEL ADG721BRMZ-REEL7

–40°C to +85°C S6B MSOP RM-8

–40°C to +85°C S6B MSOP RM-8 ADG722BRM –40°C to +85°C S7B MSOP RM-8 ADG722BRM-REEL –40°C to +85°C S7B MSOP RM-8 ADG722BRM-REEL7 –40°C to +85°C S7B MSOP RM-8 ADG722BRMZ ADG722BRMZ-REEL ADG722BRMZ-REEL7

–40°C to +85°C S7B MSOP RM-8

–40°C to +85°C S7B MSOP RM-8 ADG723BRM –40°C to +85°C S8B MSOP RM-8 ADG723BRM-REEL –40°C to +85°C S8B MSOP RM-8 ADG723BRM-REEL7 –40°C to +85°C S8B MSOP RM-8

NOTES

Branding = Due to package size limitations, these three characters represent the part number.

Z = Pb-free part.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG721/ADG722/ADG723 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–4–

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