Analog Devices ADG713, ADG712, ADG711 Datasheet

REV. 0

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a

ADG711/ADG712/ADG713

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

CMOS

Low Voltage 4 ⍀ Quad SPST Switches

FUNCTIONAL BLOCK DIAGRAMS

IN1

IN2

IN3

IN4

S1

D1
S2

D2
S3

D3
S4

D4

ADG711

SWITCHES SHOWN FOR A LOGIC "1" INPUT

IN1

IN2

IN3

IN4

S1

D1
S2

D2
S3

D3
S4

D4

ADG712

IN1

IN2

IN3

IN4

S1

D1
S2

D2
S3

D3
S4

D4

ADG713

FEATURES
+1.8 V to +5.5 V Single Supply
Low On Resistance (2.5 ⍀ Typ)
Low On-Resistance Flatness
–3 dB Bandwidth > 200 MHz
Rail-to-Rail Operation
16-Lead TSSOP and SOIC Packages
Fast Switching Times

t

ON

16 ns

t

OFF

10 ns
Typical Power Consumption (< 0.01 ␮W)
TTL/CMOS Compatible

APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement

GENERAL DESCRIPTION

The ADG711, ADG712 and ADG713 are monolithic CMOS
devices containing four independently selectable switches. These
switches are designed on an advanced submicron process that
provides low power dissipation yet gives high switching speed,
low on resistance, low leakage currents and high bandwidth.

They are designed to operate from a single +1.8 V to +5.5 V
supply, making them ideal for use in battery powered instru­ments and with the new generation of DACs and ADCs from
Analog Devices. Fast switching times and high bandwidth
make the part suitable for video signal switching.

The ADG711, ADG712 and ADG713 contain four independent
single-pole/single throw (SPST) switches. The ADG711 and
ADG712 differ only in that the digital control logic is inverted.
The ADG711 switches are turned on with a logic low on the
appropriate control input, while a logic high is required to turn
on the switches of the ADG712. The ADG713 contains two
switches whose digital control logic is similar to the ADG711,
while the logic is inverted on the other two switches.

Each switch conducts equally well in both directions when ON.
The ADG713 exhibits break-before-make switching action.

The ADG711/ADG712/ADG713 are available in 16-lead TSSOP
and 16-lead SOIC packages.

PRODUCT HIGHLIGHTS

1. +1.8 V to +5.5 V Single Supply Operation. The ADG711,
ADG712 and ADG713 offer high performance and are
fully specified and guaranteed with +3 V and +5 V supply
rails.

2. Very Low R

ON

(4.5 Ω max at +5 V, 8 Ω max at +3 V). At

supply voltage of +1.8 V, R

ON

is typically 35 Ω over the

temperature range.

3. Low On-Resistance Flatness.

4. –3 dB Bandwidth >200 MHz.

5. Low Power Dissipation.
CMOS construction ensures low power dissipation.

6. Fast t

ON/tOFF.

7. Break-Before-Make Switching.
This prevents channel shorting when the switches are con­figured as a multiplexer (ADG713 only).

8. 16-Lead TSSOP and 16-Lead SOIC Packages.

–2–

REV. 0

ADG711/ADG712/ADG713–SPECIFICATIONS

1

(VDD = +5 V ⴞ 10%, GND = 0 V. All specifications
–40ⴗC to +85ⴗC unless otherwise noted.)

B Version

–40ⴗC to

Parameter +25ⴗC +85ⴗC Units Test Conditions/Comments

ANALOG SWITCH
Analog Signal Range 0 V to V

DD

V

On-Resistance (R

ON

) 2.5 Ω typ V

S

= 0 V to VDD, IS = –10 mA;

4 4.5 Ω max Test Circuit 1

On-Resistance Match Between 0.05 Ω typ V

S

= 0 V to VDD, IS = –10 mA

Channels (∆R

ON

) 0.3 Ω max

On-Resistance Flatness (R

FLAT(ON)

) 0.5 Ω typ V

S

= 0 V to VDD, IS = –10 mA

1.0 Ω max

LEAKAGE CURRENTS V

DD

= +5.5 V;

Source OFF Leakage I

S

(OFF) ±0.01 nA typ V

S

= 4.5 V/1 V, VD = 1 V/4.5 V;

±0.1 ±0.2 nA max Test Circuit 2

Drain OFF Leakage I

D

(OFF) ±0.01 nA typ V

S

= 4.5 V/1 V, VD = 1 V/4.5 V;

±0.1 ±0.2 nA max Test Circuit 2

Channel ON Leakage I

D

, I

S

(ON) ±0.01 nA typ V

S

= VD = 1 V, or 4.5 V;

±0.1 ±0.2 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V

INH

2.4 V min

Input Low Voltage, V

INL

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ V

IN

= V

INL

or V

INH

±0.1 µA max

DYNAMIC CHARACTERISTICS

2

t

ON

11 ns typ R

L

= 300 Ω, C

L

= 35 pF,

16 ns max V

S

= 3 V; Test Circuit 4

t

OFF

6 ns typ R

L

= 300 Ω, C

L

= 35 pF,

10 ns max V

S

= 3 V; Test Circuit 4

Break-Before-Make Time Delay, t

D

6 ns typ R

L

= 300 Ω, C

L

= 35 pF,

(ADG713 Only) 1 ns min V

S1

= VS2 = 3 V; Test Circuit 5

Charge Injection 3 pC typ V

S

= 2 V; R

S

= 0 Ω, C

L

= 1 nF;

Test Circuit 6

Off Isolation –58 dB typ R

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

–78 dB typ R

L

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

Test Circuit 7

Channel-to-Channel Crosstalk –90 dB typ R

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz;

Test Circuit 8

Bandwidth –3 dB 200 MHz typ R

L

= 50 Ω, C

L

= 5 pF; Test Circuit 9

C

S

(OFF) 10 pF typ

C

D

(OFF) 10 pF typ

CD, CS (ON) 22 pF typ

POWER REQUIREMENTS V

DD

= +5.5 V

I

DD

0.001 µA typ Digital Inputs = 0 V or 5 V

1.0 µA max

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–3–REV. 0

ADG711/ADG712/ADG713

(VDD = +3 V ⴞ 10%, GND = 0 V. All specifications –40ⴗC to +85ⴗC unless otherwise noted.)

B Version

–40ⴗC to

Parameter +25ⴗC +85ⴗC Units Test Conditions/Comments

ANALOG SWITCH
Analog Signal Range 0 V to V

DD

V

On-Resistance (R

ON

) 5 5.5 Ω typ V

S

= 0 V to VDD, IS = –10 mA;

8 Ω max Test Circuit 1

On-Resistance Match Between 0.1 Ω typ V

S

= 0 V to VDD, IS = –10 mA

Channels (∆R

ON

) 0.3 Ω max

On-Resistance Flatness (R

FLAT(ON)

) 2.5 Ω typ V

S

= 0 V to VDD, IS = –10 mA

LEAKAGE CURRENTS V

DD

= +3.3 V;

Source OFF Leakage I

S

(OFF) ±0.01 nA typ V

S

= 3 V/1 V, VD = 1 V/3 V;

±0.1 ±0.2 nA max Test Circuit 2

Drain OFF Leakage I

D

(OFF) ±0.01 nA typ V

S

= 3 V/1 V, VD = 1 V/3 V;

±0.1 ±0.2 nA max Test Circuit 2

Channel ON Leakage I

D

, I

S

(ON) ±0.01 nA typ V

S

= VD = 1 V, or 3 V;

±0.1 ±0.2 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V

INH

2.0 V min

Input Low Voltage, V

INL

0.4 V max

Input Current

I

INL

or I

INH

0.005 µA typ V

IN

= V

INL

or V

INH

±0.1 µA max

DYNAMIC CHARACTERISTICS

2

t

ON

13 ns typ R

L

= 300 Ω, C

L

= 35 pF,

20 ns max V

S

= 2 V; Test Circuit 4

t

OFF

7 ns typ R

L

= 300 Ω, C

L

= 35 pF,

12 ns max V

S

= 2 V; Test Circuit 4

Break-Before-Make Time Delay, t

D

7 ns typ R

L

= 300 Ω, C

L

= 35 pF,

(ADG713 Only) 1 ns min V

S1

= VS2 = 2 V; Test Circuit 5

Charge Injection 3 pC typ V

S

= 1.5 V; R

S

= 0 Ω, C

L

= 1 nF;

Test Circuit 6

Off Isolation –58 dB typ R

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

–78 dB typ R

L

= 50 Ω, C

L

= 5 pF, f = 1 MHz;

Test Circuit 7

Channel-to-Channel Crosstalk –90 dB typ R

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz;

Test Circuit 8

Bandwidth –3 dB 200 MHz typ R

L

= 50 Ω, C

L

= 5 pF; Test Circuit 9

C

S

(OFF) 10 pF typ

C

D

(OFF) 10 pF typ

CD, CS (ON) 22 pF typ

POWER REQUIREMENTS V

DD

= +3.3 V

I

DD

0.001 µA typ Digital Inputs = 0 V or 3 V

1.0 µA max

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

SPECIFICATIONS

1