Analog Devices ADG709, ADG708 Datasheet

CMOS, 3 ⍀ Low Voltage

S1

S8

A0

D

A1

A2

ADG708

S1A

A0

DA

S4A

S1B

S4B

DB

EN

ADG709

1 OF 4

DECODER

EN

1 OF 8

DECODER

A1

a

FEATURES

1.8 V to 5.5 V Single Supply
ⴞ3 V Dual Supply
3 ⍀ On-Resistance

0.75 ⍀ On-Resistance Flatness
100 pA Leakage Currents
14 ns Switching Times
Single 8-to-1 Multiplexer ADG708
Differential 4-to-1 Multiplexer ADG709
16-Lead TSSOP Package
Low Power Consumption
TTL/CMOS-Compatible Inputs

APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems

4-/8-Channel Multiplexers

ADG708/ADG709

FUNCTIONAL BLOCK DIAGRAMS

GENERAL DESCRIPTION

The ADG708 and ADG709 are low voltage, CMOS analog
multiplexers comprising eight single channels and four differential
channels respectively. The ADG708 switches one of eight inputs
(S1–S8) to a common output, D, as determined by the 3-bit
binary address lines A0, A1, and A2. The ADG709 switches one
of four differential inputs to a common differential output as
determined by the 2-bit binary address lines A0 and A1. An EN
input on both devices is used to enable or disable the device. When
disabled, all channels are switched OFF.

PRODUCT HIGHLIGHTS

1. Single/Dual Supply Operation. The ADG708 and ADG709
are fully specified and guaranteed with 3 V and 5 V single

supply and ±3 V dual supply rails.

2. Low R

(3 Ω Typical).

ON

3. Low Power Consumption (<0.01 µW).

4. Guaranteed Break-Before-Make Switching Action.

5. Small 16-Lead TSSOP Package.

Low power consumption and operating supply range of 1.8 V to

5.5 V make the ADG708 and ADG709 ideal for battery-powered,
portable instruments. All channels exhibit break-before-make
switching action preventing momentary shorting when switch­ing channels.

These switches are designed on an enhanced submicron process
that provides low power dissipation yet gives high switching
speed, very low on-resistance and leakage currents. On-resistance
is in the region of a few ohms and is closely matched between
switches and very flat over the full signal range. These parts can
operate equally well as either Multiplexers or Demultiplexers,
and have an input signal range that extends to the supplies.

The ADG708 and ADG709 are available in a 16-lead TSSOP
package.

REV. 0

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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
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Fax: [phone] © Analog Devices, Inc., 2000

1

ADG708/ADG709–SPECIFICATIONS

B Version C Version

–40ⴗC –40ⴗC

Parameter +25ⴗC to +85ⴗC +25ⴗC to +85ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

)3 3 Ω typ V

ON

4.5 5 4.5 5 Ω max Test Circuit 1

On-Resistance Match Between 0.4 0.4 Ω typ

Channels (∆R

On-Resistance Flatness (R

) 0.8 0.8 Ω max V

ON

) 0.75 0.75 Ω typ V

FLAT(ON)

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

(OFF) ±0.01 ±0.01 nA typ V

S

(OFF) ±0.01 ±0.01 nA typ V

D

, I

(ON) ±0.01 ±0.01 nA typ V

D

S

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INH

INL

Input Current

I

INL

or I

INH

0.005 0.005 µA typ V

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

t

(EN) 14 14 ns typ R

ON

t

(EN) 7 7 ns typ R

OFF

2

14 14 ns typ R

8 8 ns typ R

D

Charge Injection ±3 ±3 pC typ V

Off Isolation –60 –60 dB typ R

–80 –80 dB typ R

Channel-to-Channel Crosstalk –60 –60 dB typ R

–80 –80 dB typ R

–3 dB Bandwidth 55 55 MHz typ R
C

(OFF) 13 13 pF typ

S

C

(OFF)

D

ADG708 85 85 pF typ
ADG709 42 42 pF typ

C

, CS (ON)

D

ADG708 96 96 pF typ
ADG709 48 48 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature range is as follows: B and C Versions: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

0.001 0.001 µA typ Digital Inputs = 0 V or 5.5 V

DD

1.2 1.2 Ω max

±20 ±0.1 ±0.3 nA max Test Circuit 2
±20 ±0.1 ±0.75 nA max Test Circuit 3
±20 ±0.1 ±0.75 nA max

2.4 2.4 V min

0.8 0.8 V max

±0.1 ±0.1 µA max

25 25 ns max V

1 1 ns min V

25 25 ns max V

12 12 ns max V

1.0 1.0 µA max

(VDD = 5 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

0 V to VDDV

= 0 V to VDD, IDS = 10 mA;

S

= 0 V to VDD, IDS = 10 mA

S

= 0 V to VDD, IDS = 10 mA

S

= 5.5 V

DD

= 4.5 V/1 V, VS = 1 V/4.5 V;

D

= 4.5 V/1 V, VS = 1 V/4.5 V;

D

= VS = 1 V, or 4.5 V, Test Circuit 4

D

= V

IN

= 300 Ω, C

L

S1

= 300 Ω, C

L

= 3 V, Test Circuit 6

S

= 300 Ω, C

L

= 3 V, Test Circuit 7

S

= 300 Ω, C

L

= 3 V, Test Circuit 7

S

= 2.5 V, R

S

Test Circuit 8

= 50 Ω, C

L

= 50 Ω, C

L

Test Circuit 9

= 50 Ω, C

L

= 50 Ω, C

L

Test Circuit 10

= 50 Ω, C

L

DD

or V

INL

INH

= 35 pF, Test Circuit 5

L

= 3 V/0 V, VS8 = 0 V/3 V

= 35 pF

L

= 35 pF

L

= 35 pF

L

= 0 Ω, C

S

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

= 5 pF, Test Circuit 9

L

= 1 nF;

L

= 5.5 V

–2–

REV. 0

ADG708/ADG709

SPECIFICATIONS

Parameter +25ⴗC to +85ⴗC +25ⴗC to +85ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

On-Resistance Match Between 0.4 0.4 Ω typ V

Channels (∆RON) 1.2 1.2 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

(EN) 18 18 ns typ R

t

ON

(EN) 8 8 ns typ R

t

OFF

Charge Injection ±3 ±3 pC typ V

Off Isolation –60 –60 dB typ R

Channel-to-Channel Crosstalk –60 –60 dB typ R

–3 dB Bandwidth 55 55 MHz typ R

(OFF) 13 13 pF typ

C

S

(OFF)

C

D

ADG708 85 85 pF typ
ADG709 42 42 pF typ

, CS (ON)

C

D

ADG708 96 96 pF typ
ADG709 48 48 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B and C Versions: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)8 8Ω typ V

ON

S

(OFF) ±0.01 ±0.01 nA typ V

D

D

INH

INL

1

(VDD = 3 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

B Version C Version

–40ⴗC –40ⴗC

DD

11 12 11 12 Ω max Test Circuit 1

(OFF) ±0.01 ±0.01 nA typ V

±20 ±0.1 ±0.3 nA max Test Circuit 2
±20 ±0.1 ±0.75 nA max Test Circuit 3

, I

(ON) ±0.01 ±0.01 nA typ V

S

±20 ±0.1 ±0.75 nA max

2.0 2.0 V min

0.4 0.4 V max

0.005 0.005 µA typ V
±0.1 ±0.1 µA max

2

18 18 ns typ R

30 30 ns max V

8 8 ns typ R

D

1 1 ns min V

30 30 ns max V

15 15 ns max V

–80 –80 dB typ R

–80 –80 dB typ R

0.001 0.001 µA typ Digital Inputs = 0 V or 3.3 V

1.0 1.0 µA max

0 V to VDDV

= 0 V to VDD, IDS = 10 mA;

S

= 0 V to V

S

= 3.3 V

DD

= 3 V/1 V, VD = 1 V/3 V;

S

= 3 V/1 V, VD = 1 V/3 V;

S

= VD = 1 V or 3 V, Test Circuit 4

S

= V

IN

INL

= 300 Ω, C

L

= 2 V/0 V, VS2 = 0 V/2 V

S1

= 300 Ω, C

L

= 2 V, Test Circuit 6

S

= 300 Ω, C

L

= 2 V, Test Circuit 7

S

= 300 Ω, C

L

= 2 V, Test Circuit 7

S

= 1.5 V, R

S

, IDS = 10 mA

DD

or V

INH

= 35 pF, Test Circuit 5

L

= 35 pF

L

= 35 pF

L

= 35 pF

L

= 0 Ω, C

S

= 1 nF;

L

Test Circuit 8

= 50 Ω, C

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

Test Circuit 9

= 50 Ω, C

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

Test Circuit 10

= 50 Ω, C

L

= 3.3 V

DD

= 5 pF, Test Circuit 9

L

REV. 0

–3–

ADG708/ADG709–SPECIFICATIONS

1

DUAL SUPPLY

(VDD = +3 V ⴞ 10%, VSS = –3 V ⴞ 10%, GND = 0 V)

B Version C Version

–40ⴗC –40ⴗC

Parameter +25ⴗC to +85ⴗC +25ⴗC to +85ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range V
On-Resistance (R

) 2.5 2.5 Ω typ V

ON

SS

to V

DD

VSS to VDDV

= VSS to VDD, IDS = 10 mA;

S

4.5 5 4.5 5 Ω max Test Circuit 1

On-Resistance Match Between 0.4 0.4 Ω typ

Channels (∆R

) 0.8 0.8 Ω max V

ON

On-Resistance Flatness (R

) 0.6 0.6 Ω typ V

FLAT(ON)

= VSS to VDD, IDS = 10 mA

S

= VSS to VDD, IDS = 10 mA

S

1.0 1.0 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.01 ±0.01 nA typ V

S

= +3.3 V, VSS = –3.3 V

DD

= +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;

S

±20 ±0.1 ±0.3 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.01 ±0.01 nA typ V

D

= +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;

S

±20 ±0.1 ±0.75 nA max Test Circuit 3

Channel ON Leakage I

(ON) ±0.01 ±0.01 nA typ V

D

S

= VD = +2.25 V/–1.25 V, Test Circuit 4

S

, I

±20 ±0.1 ±0.75 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.0 2.0 V min

0.4 0.4 V max

Input Current

I

INL

or I

INH

0.005 0.005 µA typ V

IN

= V

INL

or V

INH

±0.1 ±0.1 µA max

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

(EN) 14 14 ns typ R

t

ON

(EN) 8 8 ns typ R

t

OFF

Charge Injection ±3 ±3 pC typ V

2

14 14 ns typ R

25 25 ns max V

8 8 ns typ R

D

1 1 ns min V

25 25 ns max V

15 15 ns max V

= 300 Ω, C

L

= 1.5 V/0 V, Test Circuit 5

S

= 300 Ω, C

L

= 1.5 V, Test Circuit 6

S

= 300 Ω, C

L

= 1.5 V, Test Circuit 7

S

= 300 Ω, C

L

= 1.5 V, Test Circuit 7

S

= 0 V, R

S

= 35 pF, Test Circuit 5

L

= 35 pF

L

= 35 pF

L

= 35 pF

L

= 0 Ω, C

S

= 1 nF;

L

Test Circuit 8

Off Isolation –60 –60 dB typ R

–80 –80 dB typ R

= 50 Ω, C

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

Test Circuit 9

Channel-to-Channel Crosstalk –60 –60 dB typ R

–80 –80 dB typ R

= 50 Ω, C

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

Test Circuit 10

–3 dB Bandwidth 55 55 MHz typ R

(OFF) 13 13 pF typ

C

S

(OFF)

C

D

= 50 Ω, C

L

= 5 pF, Test Circuit 9

L

ADG708 85 85 pF typ
ADG709 42 42 pF typ

, CS (ON)

C

D

ADG708 96 96 ` pF typ
ADG709 48 48 pF typ

POWER REQUIREMENTS V

I

DD

0.001 0.001 µA typ Digital Inputs = 0 V or 3.3 V

= 3.3 V

DD

1.0 1.0 µA max

I

SS

0.001 0.001 µA typ V

= –3.3 V

SS

1.0 1.0 µA max Digital Inputs = 0 V or 3.3 V

NOTES

1

Temperature range is as follows: B and C Versions: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–4–

REV. 0