Analog Devices ADG709, ADG708 Datasheet

CMOS, 3 ⍀ Low Voltage

S1

S8

A0

D

A1

A2

ADG708

S1A

A0

DA

S4A

S1B

S4B

DB

EN

ADG709

1 OF 4

DECODER

EN

1 OF 8

DECODER

A1

a

FEATURES

1.8 V to 5.5 V Single Supply
ⴞ3 V Dual Supply
3 ⍀ On-Resistance

0.75 ⍀ On-Resistance Flatness
100 pA Leakage Currents
14 ns Switching Times
Single 8-to-1 Multiplexer ADG708
Differential 4-to-1 Multiplexer ADG709
16-Lead TSSOP Package
Low Power Consumption
TTL/CMOS-Compatible Inputs

APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems

4-/8-Channel Multiplexers

ADG708/ADG709

FUNCTIONAL BLOCK DIAGRAMS

GENERAL DESCRIPTION

The ADG708 and ADG709 are low voltage, CMOS analog
multiplexers comprising eight single channels and four differential
channels respectively. The ADG708 switches one of eight inputs
(S1–S8) to a common output, D, as determined by the 3-bit
binary address lines A0, A1, and A2. The ADG709 switches one
of four differential inputs to a common differential output as
determined by the 2-bit binary address lines A0 and A1. An EN
input on both devices is used to enable or disable the device. When
disabled, all channels are switched OFF.

PRODUCT HIGHLIGHTS

1. Single/Dual Supply Operation. The ADG708 and ADG709
are fully specified and guaranteed with 3 V and 5 V single

supply and ±3 V dual supply rails.

2. Low R

(3 Ω Typical).

ON

3. Low Power Consumption (<0.01 µW).

4. Guaranteed Break-Before-Make Switching Action.

5. Small 16-Lead TSSOP Package.

Low power consumption and operating supply range of 1.8 V to

5.5 V make the ADG708 and ADG709 ideal for battery-powered,
portable instruments. All channels exhibit break-before-make
switching action preventing momentary shorting when switch­ing channels.

These switches are designed on an enhanced submicron process
that provides low power dissipation yet gives high switching
speed, very low on-resistance and leakage currents. On-resistance
is in the region of a few ohms and is closely matched between
switches and very flat over the full signal range. These parts can
operate equally well as either Multiplexers or Demultiplexers,
and have an input signal range that extends to the supplies.

The ADG708 and ADG709 are available in a 16-lead TSSOP
package.

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

1

ADG708/ADG709–SPECIFICATIONS

B Version C Version

–40ⴗC –40ⴗC

Parameter +25ⴗC to +85ⴗC +25ⴗC to +85ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

)3 3 Ω typ V

ON

4.5 5 4.5 5 Ω max Test Circuit 1

On-Resistance Match Between 0.4 0.4 Ω typ

Channels (∆R

On-Resistance Flatness (R

) 0.8 0.8 Ω max V

ON

) 0.75 0.75 Ω typ V

FLAT(ON)

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

(OFF) ±0.01 ±0.01 nA typ V

S

(OFF) ±0.01 ±0.01 nA typ V

D

, I

(ON) ±0.01 ±0.01 nA typ V

D

S

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INH

INL

Input Current

I

INL

or I

INH

0.005 0.005 µA typ V

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

t

(EN) 14 14 ns typ R

ON

t

(EN) 7 7 ns typ R

OFF

2

14 14 ns typ R

8 8 ns typ R

D

Charge Injection ±3 ±3 pC typ V

Off Isolation –60 –60 dB typ R

–80 –80 dB typ R

Channel-to-Channel Crosstalk –60 –60 dB typ R

–80 –80 dB typ R

–3 dB Bandwidth 55 55 MHz typ R
C

(OFF) 13 13 pF typ

S

C

(OFF)

D

ADG708 85 85 pF typ
ADG709 42 42 pF typ

C

, CS (ON)

D

ADG708 96 96 pF typ
ADG709 48 48 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature range is as follows: B and C Versions: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

0.001 0.001 µA typ Digital Inputs = 0 V or 5.5 V

DD

1.2 1.2 Ω max

±20 ±0.1 ±0.3 nA max Test Circuit 2
±20 ±0.1 ±0.75 nA max Test Circuit 3
±20 ±0.1 ±0.75 nA max

2.4 2.4 V min

0.8 0.8 V max

±0.1 ±0.1 µA max

25 25 ns max V

1 1 ns min V

25 25 ns max V

12 12 ns max V

1.0 1.0 µA max

(VDD = 5 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

0 V to VDDV

= 0 V to VDD, IDS = 10 mA;

S

= 0 V to VDD, IDS = 10 mA

S

= 0 V to VDD, IDS = 10 mA

S

= 5.5 V

DD

= 4.5 V/1 V, VS = 1 V/4.5 V;

D

= 4.5 V/1 V, VS = 1 V/4.5 V;

D

= VS = 1 V, or 4.5 V, Test Circuit 4

D

= V

IN

= 300 Ω, C

L

S1

= 300 Ω, C

L

= 3 V, Test Circuit 6

S

= 300 Ω, C

L

= 3 V, Test Circuit 7

S

= 300 Ω, C

L

= 3 V, Test Circuit 7

S

= 2.5 V, R

S

Test Circuit 8

= 50 Ω, C

L

= 50 Ω, C

L

Test Circuit 9

= 50 Ω, C

L

= 50 Ω, C

L

Test Circuit 10

= 50 Ω, C

L

DD

or V

INL

INH

= 35 pF, Test Circuit 5

L

= 3 V/0 V, VS8 = 0 V/3 V

= 35 pF

L

= 35 pF

L

= 35 pF

L

= 0 Ω, C

S

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

= 5 pF, Test Circuit 9

L

= 1 nF;

L

= 5.5 V

–2–

REV. 0

ADG708/ADG709

SPECIFICATIONS

Parameter +25ⴗC to +85ⴗC +25ⴗC to +85ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

On-Resistance Match Between 0.4 0.4 Ω typ V

Channels (∆RON) 1.2 1.2 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

(EN) 18 18 ns typ R

t

ON

(EN) 8 8 ns typ R

t

OFF

Charge Injection ±3 ±3 pC typ V

Off Isolation –60 –60 dB typ R

Channel-to-Channel Crosstalk –60 –60 dB typ R

–3 dB Bandwidth 55 55 MHz typ R

(OFF) 13 13 pF typ

C

S

(OFF)

C

D

ADG708 85 85 pF typ
ADG709 42 42 pF typ

, CS (ON)

C

D

ADG708 96 96 pF typ
ADG709 48 48 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B and C Versions: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)8 8Ω typ V

ON

S

(OFF) ±0.01 ±0.01 nA typ V

D

D

INH

INL

1

(VDD = 3 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

B Version C Version

–40ⴗC –40ⴗC

DD

11 12 11 12 Ω max Test Circuit 1

(OFF) ±0.01 ±0.01 nA typ V

±20 ±0.1 ±0.3 nA max Test Circuit 2
±20 ±0.1 ±0.75 nA max Test Circuit 3

, I

(ON) ±0.01 ±0.01 nA typ V

S

±20 ±0.1 ±0.75 nA max

2.0 2.0 V min

0.4 0.4 V max

0.005 0.005 µA typ V
±0.1 ±0.1 µA max

2

18 18 ns typ R

30 30 ns max V

8 8 ns typ R

D

1 1 ns min V

30 30 ns max V

15 15 ns max V

–80 –80 dB typ R

–80 –80 dB typ R

0.001 0.001 µA typ Digital Inputs = 0 V or 3.3 V

1.0 1.0 µA max

0 V to VDDV

= 0 V to VDD, IDS = 10 mA;

S

= 0 V to V

S

= 3.3 V

DD

= 3 V/1 V, VD = 1 V/3 V;

S

= 3 V/1 V, VD = 1 V/3 V;

S

= VD = 1 V or 3 V, Test Circuit 4

S

= V

IN

INL

= 300 Ω, C

L

= 2 V/0 V, VS2 = 0 V/2 V

S1

= 300 Ω, C

L

= 2 V, Test Circuit 6

S

= 300 Ω, C

L

= 2 V, Test Circuit 7

S

= 300 Ω, C

L

= 2 V, Test Circuit 7

S

= 1.5 V, R

S

, IDS = 10 mA

DD

or V

INH

= 35 pF, Test Circuit 5

L

= 35 pF

L

= 35 pF

L

= 35 pF

L

= 0 Ω, C

S

= 1 nF;

L

Test Circuit 8

= 50 Ω, C

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

Test Circuit 9

= 50 Ω, C

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

Test Circuit 10

= 50 Ω, C

L

= 3.3 V

DD

= 5 pF, Test Circuit 9

L

REV. 0

–3–

ADG708/ADG709–SPECIFICATIONS

1

DUAL SUPPLY

(VDD = +3 V ⴞ 10%, VSS = –3 V ⴞ 10%, GND = 0 V)

B Version C Version

–40ⴗC –40ⴗC

Parameter +25ⴗC to +85ⴗC +25ⴗC to +85ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range V
On-Resistance (R

) 2.5 2.5 Ω typ V

ON

SS

to V

DD

VSS to VDDV

= VSS to VDD, IDS = 10 mA;

S

4.5 5 4.5 5 Ω max Test Circuit 1

On-Resistance Match Between 0.4 0.4 Ω typ

Channels (∆R

) 0.8 0.8 Ω max V

ON

On-Resistance Flatness (R

) 0.6 0.6 Ω typ V

FLAT(ON)

= VSS to VDD, IDS = 10 mA

S

= VSS to VDD, IDS = 10 mA

S

1.0 1.0 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.01 ±0.01 nA typ V

S

= +3.3 V, VSS = –3.3 V

DD

= +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;

S

±20 ±0.1 ±0.3 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.01 ±0.01 nA typ V

D

= +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;

S

±20 ±0.1 ±0.75 nA max Test Circuit 3

Channel ON Leakage I

(ON) ±0.01 ±0.01 nA typ V

D

S

= VD = +2.25 V/–1.25 V, Test Circuit 4

S

, I

±20 ±0.1 ±0.75 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.0 2.0 V min

0.4 0.4 V max

Input Current

I

INL

or I

INH

0.005 0.005 µA typ V

IN

= V

INL

or V

INH

±0.1 ±0.1 µA max

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

(EN) 14 14 ns typ R

t

ON

(EN) 8 8 ns typ R

t

OFF

Charge Injection ±3 ±3 pC typ V

2

14 14 ns typ R

25 25 ns max V

8 8 ns typ R

D

1 1 ns min V

25 25 ns max V

15 15 ns max V

= 300 Ω, C

L

= 1.5 V/0 V, Test Circuit 5

S

= 300 Ω, C

L

= 1.5 V, Test Circuit 6

S

= 300 Ω, C

L

= 1.5 V, Test Circuit 7

S

= 300 Ω, C

L

= 1.5 V, Test Circuit 7

S

= 0 V, R

S

= 35 pF, Test Circuit 5

L

= 35 pF

L

= 35 pF

L

= 35 pF

L

= 0 Ω, C

S

= 1 nF;

L

Test Circuit 8

Off Isolation –60 –60 dB typ R

–80 –80 dB typ R

= 50 Ω, C

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

Test Circuit 9

Channel-to-Channel Crosstalk –60 –60 dB typ R

–80 –80 dB typ R

= 50 Ω, C

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

Test Circuit 10

–3 dB Bandwidth 55 55 MHz typ R

(OFF) 13 13 pF typ

C

S

(OFF)

C

D

= 50 Ω, C

L

= 5 pF, Test Circuit 9

L

ADG708 85 85 pF typ
ADG709 42 42 pF typ

, CS (ON)

C

D

ADG708 96 96 ` pF typ
ADG709 48 48 pF typ

POWER REQUIREMENTS V

I

DD

0.001 0.001 µA typ Digital Inputs = 0 V or 3.3 V

= 3.3 V

DD

1.0 1.0 µA max

I

SS

0.001 0.001 µA typ V

= –3.3 V

SS

1.0 1.0 µA max Digital Inputs = 0 V or 3.3 V

NOTES

1

Temperature range is as follows: B and C Versions: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–4–

REV. 0

ADG708/ADG709

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

(T

= 25°C unless otherwise noted)

A

1

VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

V

DD

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –3.5 V

V

SS

Analog Inputs

Digital Inputs

2

. . . . . . . . . . . . . . VSS – 0.3 V to VDD +0.3 V or

2

. . . . . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V or

30 mA, Whichever Occurs First

30 mA, Whichever Occurs First

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

. . . . . . . . . . . . . . . . . (Pulsed at 1 ms, 10% Duty Cycle max)

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Operating Temperature Range

Industrial (B, C Versions) . . . . . . . . . . . . . –40°C to +85°C

TSSOP Package, Power Dissipation . . . . . . . . . . . . . 432 mW

Thermal Impedance . . . . . . . . . . . . . . . . . . . 150.4°C/W

θ

JA

Thermal Impedance . . . . . . . . . . . . . . . . . . . . 27.6°C/W

θ

JC

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.

2

Overvoltages at IN, S or D will be clamped by internal diodes. Current should be

limited to the maximum ratings given.

Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG708/ADG709 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

Table I. ADG708 Truth Table

PIN CONFIGURATIONS

A2 A1 A0 EN Switch Condition

XXX0 NONE
00011
00112
01013
01114
10015
10116
11017
11118

X = Don’t Care

Table II. ADG709 Truth Table

A1 A0 EN ON Switch Pair

X X 0 NONE
0011
0112
1013
1114

X = Don’t Care.

ORDERING GUIDE

V

EN

V
S1A
S2A
S3A
S4A

DA

A0
EN

SS

S1
S2
S3
S4

D

A0

SS

TSSOP

1
2

3

ADG708

4

TOP VIEW

(Not to Scale)

5
6
7
8

1
2

3

ADG709

4

TOP VIEW

(Not to Scale)

5
6
7
8

A1

16

A2

15
14

GND
V

13

DD

12

S5

11

S6
S7

10

9

S8

A1

16

GND

15

V

14

DD

S1B

13

S2B

12

S3B

11

S4B

10

9

DB

Model Temperature Range Package Description Package Option

ADG708BRU –40°C to +85°C 16-Lead Thin Shrink Small Outline Package (TSSOP) RU-16
ADG709BRU –40°C to +85°C 16-Lead Thin Shrink Small Outline Package (TSSOP) RU-16
ADG708CRU –40°C to +85°C 16-Lead Thin Shrink Small Outline Package (TSSOP) RU-16
ADG709CRU –40°C to +85°C 16-Lead Thin Shrink Small Outline Package (TSSOP) RU-16

REV. 0

–5–

ADG708/ADG709

TERMINOLOGY

V

DD

V

SS

Most positive power supply potential.

Most negative power supply in a dual supply
application. In single supply applications, this
should be tied to ground at the device.

GND Ground (0 V) Reference.

S Source Terminal. May be an input or output.

D Drain Terminal. May be an input or output.

IN Logic Control Input.

R

ON

R

FLAT(ON)

Ohmic resistance between D and S.

Flatness is defined as the difference between the
maximum and minimum value of on-resistance
as measured over the specified analog signal range.

I

(OFF) Source leakage current with the switch “OFF.”

S

I

(OFF) Drain leakage current with the switch “OFF.”

D

I

, IS (ON) Channel leakage current with the switch “ON.”

D

V

) Analog voltage on terminals D, S.

D (VS

C

(OFF) “OFF” switch source capacitance. Measured

S

with reference to ground.

C

(OFF) “OFF” switch drain capacitance. Measured

D

with reference to ground.

C

, CS (ON) “ON” switch capacitance. Measured with

D

reference to ground.

C

IN

t

TRANSITION

Digital Input Capacitance.

Delay time measured between the 50% and 90%
points of the digital inputs and the switch “ON”
condition when switching from one address state
to another.

tON (EN) Delay time between the 50% and 90% points

of the EN digital input and the switch “ON”
condition.

t

(EN) Delay time between the 50% and 90% points

OFF

of the EN digital input and the switch “OFF”
condition.

t

OPEN

“OFF” time measured between the 80% points
of both switches when switching from one address
state to another.

Off Isolation A measure of unwanted signal coupling through

an “OFF” switch.

Crosstalk A measure of unwanted signal which is coupled

through from one channel to another as a result
of parasitic capacitance.

Charge A measure of the glitch impulse transferred from
Injection the digital input to the analog output during

switching.

Bandwidth The frequency at which the output is attenuated

by 3 dBs.

On Response The frequency response of the “ON” switch.

On Loss The loss due to the ON resistance of the switch.

V

V

I

I

I

INL

INH

INL

DD

SS

(I

INH

Maximum input voltage for Logic “0.”

Minimum input voltage for Logic “1.”

) Input current of the digital input.

Positive Supply Current.

Negative Supply Current.

–6–

REV. 0

Typical Performance Characteristics–

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

0 0.5

7

6

5

4

3

2

1

0

ON RESISTANCE – V

VDD = 3V
V

SS

= 0V

1.0 1.5 2.0 2.5 3.0

–408C

+258C

+858C

8

ADG708/ADG709

8

7

6

5

4

3

ON RESISTANCE – V

2

1

0

0 12345

VD, VS, DRAIN OR SOURCE VOLTAGE – V

VDD = 2.7V

VDD = 3.3V

VDD = 4.5V

TA = 258C

= 0V

V

SS

VDD = 5.5V

Figure 1. On Resistance as a Function of VD (VS) for Single
Supply

8

7

6

5

4

3

ON RESISTANCE – V

2

1

0
–3.0

VDD = +3.0V
VSS = –3.0V

–2.0

–2.5

–1.5

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

VDD = +2.25V
VSS = –2.25V

–1.0

–0.5

VDD = +2.75V
VSS = –2.75V

0.50

1.0

1.5

TA = 258C

2.0

2.5

3.0

Figure 2. On Resistance as a Function of VD (VS) for Dual
Supply

Figure 4. On Resistance as a Function of VD (VS) for Differ­ent Temperatures, Single Supply

8

7

6

5

4

3

ON RESISTANCE – V

2

1

0
–3.0 –2.5 –2.0

+858C

–408C

–1.5

–1.0 1.0 1.5 2.0 2.50.50

–0.5

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

VDD = +3.0V
VSS = –3.0V

+258C

3.0

Figure 5. On Resistance as a Function of VD (VS) for Differ­ent Temperatures, Dual Supply

8

7

6

5

4

3

ON RESISTANCE – V

2

1

0

012345

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

+858C

–408C

+258C

VDD = 5V

= 0V

V

SS

Figure 3. On Resistance as a Function of VD (VS) for Differ­ent Temperatures, Single Supply

REV. 0

–7–

0.12

0.08

0.04

0.00

CURRENT – nA

–0.04

–0.08

–0.12

01

ID (ON)

IS (OFF)

2345

VD (V

– Volts

S)

VDD = 5V
V

SS

T

A

ID (OFF)

= 0V

= 258C

Figure 6. Leakage Currents as a Function of VD (VS)

ADG708/ADG709

0.12

0.08

0.04

0.00

CURRENT – nA

–0.04

–0.08

–0.12

0 0.5

IS (OFF)

1.0 1.5 2.0 3.0
VD (V

– Volts

S)

VDD = 3V
V

SS

= 258C

T

A

ID (ON)

ID (OFF)

2.5

= 0V

Figure 7. Leakage Currents as a Function of VD (VS)

0.12

0.08

0.04

0.00

CURRENT – nA

–0.04

IS (OFF)

VDD = +3.0V
VSS = –3.0V
TA = 258C

ID (ON)

0.35

0.30

0.25

0.20

0.15

0.10

CURRENT – nA

0.05

0.00

–0.05

15

ID (OFF)

IS (OFF)

25 35 45 55 65 75 85

TEMPERATURE – 8C

VDD = 3V

= 0V

V

SS

ID (ON)

Figure 10. Leakage Currents as a Function of Temperature

10m

TA = 258C

1m

V

= +3.0V

100m

10m

1m

CURRENT – A

100n

DD

VSS = –3.0V

VDD = +5V

VDD = +3V

–0.08

–0.12

–3.0

–2.5 –2.0 –1.5 –1.0

0 0.5

–0.5 3.0

VD (V

– Volts

S)

1.0

1.5

ID (OFF)

2.0 2.5

Figure 8. Leakage Currents as a Function of VD (VS)

0.35

0.30

0.25

0.20

0.15

0.10

CURRENT – nA

0.05

0.00

–0.05

15

ID (OFF)

25 35 45 55 65 75 85

TEMPERATURE – 8C

IS (OFF)

VDD = 5V

= 0V

V

SS

AND

= +3V

V

DD

= –3V

V

SS

ID (ON)

Figure 9. Leakage Currents as a Function of Temperature

10n

1n

100 1k 10k 100k 1M 10M

10

FREQUENCY – Hz

Figure 11. Supply Current vs. Input Switching Frequency

0

–20

–40

–60

–80

ATTENUATION – dB

–100

–120

100k 1M 10M 100M

30k

FREQUENCY – Hz

VDD = 5V

= 258C

T

A

Figure 12. Off Isolation vs. Frequency

–8–

REV. 0

ADG708/ADG709

0

–20

–40

–60

–80

ATTENUATION – dB

–100

–120

100k 1M 10M 100M

30k

FREQUENCY – Hz

Figure 13. Crosstalk vs. Frequency

– pC

–10

INJ

Q

–20

–30

VDD = 5V

= 258C

T

A

0

VDD = 5V

= 258C

T

A

–5

–10

ATTENUATION – dB

–15

–20

30k

100k 1M 10M 100M

FREQUENCY – Hz

Figure 14. On Response vs. Frequency

20

10

0

VDD = 3V
VSS = 0V

VDD = +3V

= –3V

V

SS

TA = 258C

VDD = 5V
VSS = 0V

–40

–3 –2

04

–1 1

VOLTAGE – Volts

2

3

Figure 15. Charge Injection vs. Source Voltage

5

REV. 0

–9–

ADG708/ADG709

V

S

A

0.8V

D

ID (OFF)

V

SS

V

DD

V

SS

V

DD

S1
S2

S8

EN

GND

V

D

A

2.4V

D

I

D

(ON)

V

SS

V

DD

V

SS

V

DD

S1
S8

EN

GND

V

D

V

S

Test Circuits

I

DS

V1

S

V

S

RON = V1/I

Test Circuit 1. On Resistance

V

DD

V

I

V

(OFF)

S

S

A

DD

S1
S2
S8

V

D

GND

Test Circuit 2. IS (OFF)

V

DD

V

DD

V

IN

50V

2.4V

A2
A1

S2 THRU S7

A0

ADG708*

EN

GND

* SIMILAR CONNECTION FOR ADG709

D

DS

V

SS

V

SS

D

0.8V

EN

V

SS

V

SS

V

S1

S1

ADDRESS
DRIVE (V

3V

)

IN

0V

V

S8

S8

D

R

L

300V

C

L

35pF

V

OUT

V

S1

V

OUT

V

S8

Test Circuit 5. Switching Time of Multiplexer, t

Test Circuit 3. ID (OFF)

Test Circuit 4. ID (ON)

50%

t

TRANSITION

TRANSITION

90%

50%

t

TRANSITION

90%

DD

DD

S2 THRU S7

ADG708*

GND

V

SS

V

SS

S1

V

S

ADDRESS

DRIVE (V

3V

)

IN

0V

S8

D

R

L

300V

C

L

35pF

V

OUT

V

OUT

80%

t

80%

OPEN

V

V

A2

V

IN

50V

2.4V

A1
A0

EN

* SIMILAR CONNECTION FOR ADG709

–10–

Test Circuit 6. Break-Before-Make Delay, t

OPEN

REV. 0

ADG708/ADG709

A2

V

OUT

V

SS

V

DD

D

A1
A0

EN

GND

ADG708

*

R

L

V

SS

V

SS

S1

V

S

S2

S8

2.4V

50V

50V

*

SIMILAR CONNECTION FOR ADG709

CHANNEL-TO-CHANNEL CROSSTALK = 20LOG

10

V

OUT

V

S

DD

DD

S2 THRU S8

ADG708*

GND

A2
A1
A0

S

EN

V

SS

V

SS

V

S1

S

D

R
300V

C

L

L

35pF

Test Circuit 7. Enable Delay, t

V

V

DD

SS

V

V

DD

SS

ADG708*

D

V

C

OUT

L

1nF

GND

V

OUT

LOGIC INPUT

(VIN)

ENABLE

DRIVE (V

OUTPUT

3V

0V

V

OUT

3V

IN

0V

V

0V

)

0

ON

(EN), t

OFF

50%

(EN)

Q

INJ

0.9V

t

ON

= CL 3 DV

0

(EN)

OUT

50%

DV

OUT

t

0.9V

OFF

(EN)

0

V

V

A2
A1
A0

EN

V

IN

50V

* SIMILAR CONNECTION FOR ADG709

R

S

V

S

V

IN

*SIMILAR CONNECTION FOR ADG709

Test Circuit 8. Charge Injection

V

DD

V

DD

ADG708

S1
S8

*

D

V

SS

V

SS

10

( )

V

V

OUT

R

L

50V

V

OUT

10

V

S

V

WITH SWITCH

OUT

WITHOUT SWITCH

OUT

V

S

Test Circuit 10. Channel-to-Channel Crosstalk

A2
A1
A0

**

EN

GND

OFF ISOLATION = 20LOG

INSERTION LOSS = 20LOG

*

SIMILAR CONNECTION FOR ADG709

**

CONNECT TO 2.4V FOR BANDWIDTH MEASUREMENTS

Test Circuit 9. OFF Isolation and Bandwidth

Power-Supply Sequencing

When using CMOS devices, care must be taken to ensure correct
power-supply sequencing. Incorrect power-supply sequencing
can result in the device being subjected to stresses beyond the
maximum ratings listed in the data sheet. Digital and analog
inputs should always be applied after power supplies and ground.
For single supply operation, V
to the device as possible.

should be tied to GND as close

SS

REV. 0

–11–

ADG708/ADG709

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

16-Lead TSSOP

(RU-16)

0.201 (5.10)

0.193 (4.90)

16 9

0.177 (4.50)

0.006 (0.15)

0.002 (0.05)

SEATING

PLANE

0.169 (4.30)

1

PIN 1

0.0256
(0.65)

BSC

0.0118 (0.30)

0.0075 (0.19)

8

0.256 (6.50)

0.246 (6.25)

0.0433
(1.10)
MAX

0.0079 (0.20)

0.0035 (0.090)

8°
0°

C3712–8–1/00 (rev. 0)

0.028 (0.70)

0.020 (0.50)

–12–

PRINTED IN U.S.A.

REV. 0