Analog Devices ADG708 9 a Datasheet

CMOS, 1.8 V to 5.5 V/ⴞ2.5 V, 3 ⍀

a

FEATURES

1.8 V to 5.5 V Single Supply
ⴞ2.5 V Dual Supply
3 ⍀ ON Resistance

0.75 ⍀ ON Resistance Flatness
100 pA Leakage Currents
14 ns Switching Times
Single 8-to-1 Multiplexer ADG708
Differential 4-to-1 Multiplexer ADG709
16-Lead TSSOP Package
Low Power Consumption
TTL-/CMOS-Compatible Inputs

APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems

Low Voltage 4-/8-Channel Multiplexers

ADG708/ADG709

FUNCTIONAL BLOCK DIAGRAMS

ADG708

S1

S8

1 OF 8

DECODER

A2

A1

A0

EN

S1A

S4A

D

S1B

S4B

ADG709

1 OF 4

DECODER

A0

A1

DA

DB

EN

GENERAL DESCRIPTION

The ADG708 and ADG709 are low voltage, CMOS analog
multiplexers comprising eight single channels and four differential
channels, respectively. The ADG708 switches one of eight
inputs (S1–S8) to a common output, D, as determined by the
3-bit binary address lines A0, A1, and A2. The ADG709 switches
one of four differential inputs to a common differential output
as determined by the 2-bit binary address lines A0 and A1. An
EN input on both devices is used to enable or disable the device.
When disabled, all channels are switched OFF.

Low power consumption and an operating supply range of

1.8 V to 5.5 V make the ADG708 and ADG709 ideal for
battery-powered, portable instruments. All channels exhibit
break-before-make switching action preventing momentary
shorting when switching channels.

These switches are designed on an enhanced submicron process
that provides low power dissipation yet gives high switching

speed, very low ON resistance, and leakage currents. ON resistance
is in the region of a few ohms and is closely matched between
switches and very flat over the full signal range. These parts can
operate equally well as either multiplexers or demultiplexers and
have an input signal range that extends to the supplies.

The ADG708 and ADG709 are available in a 16-lead
TSSOP package.

PRODUCT HIGHLIGHTS

1. Single-/dual-supply operation. The ADG708 and ADG709
are fully specified and guaranteed with 3 V and 5 V single­supply and ± 2.5 V dual-supply rails.

2. Low R

(3 Ω typical).

ON

3. Low power consumption (<0.01 µW).

4. Guaranteed break-before-make switching action.

5. Small 16-lead TSSOP package.

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone]www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

1

ADG708/ADG709–SPECIFICATIONS

(VDD = 5 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)

B Version C Version

–40ⴗC –40ⴗC

Parameter +25ⴗC to +85ⴗC +25ⴗC to +85ⴗCUnit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
ON Resistance (R

)3 3 Ω typ VS = 0 V to VDD, IDS = 10 mA;

ON

DD

0 V to VDDV

4.5 5 4.5 5 Ω max Test Circuit 1

ON Resistance Match Between 0.4 0.4 Ω typ

Channels (∆R

ON Resistance Flatness (R

) 0.8 0.8 Ω max VS = 0 V to VDD, IDS = 10 mA

ON

) 0.75 0.75 Ω typ VS = 0 V to VDD, IDS = 10 mA

FLAT(ON)

1.2 1.2 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ± 0.01 ± 0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;

S

= 5.5 V

DD

± 20 ± 0.1 ± 0.3 nA max Test Circuit 2

Drain OFF Leakage ID (OFF) ± 0.01 ± 0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;

± 20 ± 0.1 ± 0.75 nA max Test Circuit 3

Channel ON Leakage ID, IS (ON) ± 0.01 ± 0.01 nA typ VD = VS = 1 V or 4.5 V; Test Circuit 4

± 20 ± 0.1 ± 0.75 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 2.4 V min

0.8 0.8 V max

Input Current

I

INL

or I

INH

0.005 0.005 µA typ VIN = V

INL

or V

INH

± 0.1 ± 0.1 µA max

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

(EN) 14 14 ns typ RL = 300 Ω, CL = 35 pF

t

ON

(EN) 7 7 ns typ RL = 300 Ω, CL = 35 pF

t

OFF

Charge Injection ± 3 ± 3 pC typ V

2

14 14 ns typ RL = 300 Ω, CL = 35 pF; Test Circuit 5

25 25 ns max V

88ns typ RL = 300 Ω, CL = 35 pF

D

11ns min V

25 25 ns max V

12 12 ns max V

= 3 V/0 V, VS8 = 0 V/3 V

S1

= 3 V; Test Circuit 6

S

= 3 V; Test Circuit 7

S

= 3 V; Test Circuit 7

S

= 2.5 V, RS = 0 Ω, CL = 1 nF;

S

Test Circuit 8

Off Isolation –60 –60 dB typ R

–80 –80 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9

Channel-to-Channel Crosstalk –60 –60 dB typ R

–80 –80 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 10
–3 dB Bandwidth 55 55 MHz typ R
C

(OFF) 13 13 pF typ f = 1 MHz

S

(OFF)

C

D

= 50 Ω, CL = 5 pF; Test Circuit 11

L

ADG708 85 85 pF typ f = 1 MHz
ADG709 42 42 pF typ f = 1 MHz

, CS (ON)

C

D

ADG708 96 96 pF typ f = 1 MHz
ADG709 48 48 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

0.001 0.001 µA typ Digital Inputs = 0 V or 5.5 V

= 5.5 V

DD

1.0 1.0 µA max

NOTES

1

Temperature range is as follows: B and C Versions: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–2–

REV. A

ADG708/ADG709

1

SPECIFICATIONS

Parameter +25ⴗC to +85ⴗC +25ⴗC to +85ⴗCUnit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
ON Resistance (R

ON Resistance Match Between 0.4 0.4 Ω typ V

Channels (∆RON) 1.2 1.2 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

Break-Before-Make Time Delay, t

t

(EN) 18 18 ns typ RL = 300 Ω, CL = 35 pF

ON

(EN) 8 8 ns typ RL = 300 Ω, CL = 35 pF

t

OFF

Charge Injection ± 3 ± 3pC typ V

Off Isolation –60 –60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz

Channel-to-Channel Crosstalk –60 –60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz

–3 dB Bandwidth 55 55 MHz typ RL = 50 Ω, CL = 5 pF; Test Circuit 11
C

(OFF) 13 13 pF typ f = 1 MHz

S

(OFF)

C

D

ADG708 85 85 pF typ f = 1 MHz
ADG709 42 42 pF typ f = 1 MHz

, CS (ON)

C

D

ADG708 96 96 pF typ f = 1 MHz
ADG709 48 48 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B and C Versions: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)8 8Ω typ VS = 0 V to VDD, IDS = 10 mA;

ON

(OFF) ± 0.01 ± 0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

S

(OFF) ± 0.01 ± 0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

D

, IS (ON) ± 0.01 ± 0.01 nA typ VS = VD = 1 V or 3 V; Test Circuit 4

D

INH

INL

(VDD = 3 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)

B Version C Version

–40ⴗC –40ⴗC

DD

0 V to VDDV

11 12 11 12 Ω max Test Circuit 1

= 0 V to V

S

= 3.3 V

DD

, IDS = 10 mA

DD

± 20 ± 0.1 ± 0.3 nA max Test Circuit 2

± 20 ± 0.1 ± 0.75 nA max Test Circuit 3

± 20 ± 0.1 ± 0.75 nA max

2.0 2.0 V min

0.8 0.8 V max

0.005 0.005 µA typ VIN = V

INL

or V

INH

± 0.1 ± 0.1 µA max

2

18 18 ns typ RL = 300 Ω, CL = 35 pF; Test Circuit 5

30 30 ns max V

88ns typ RL = 300 Ω, CL = 35 pF

D

11ns min V

30 30 ns max V

15 15 ns max V

= 2 V/0 V, VS2 = 0 V/2 V

S1

= 2 V; Test Circuit 6

S

= 2 V; Test Circuit 7

S

= 2 V; Test Circuit 7

S

= 1.5 V, RS = 0 Ω, CL = 1 nF;

S

Test Circuit 8

–80 –80 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9

–80 –80 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 10

= 3.3 V

DD

0.001 0.001 µA typ Digital Inputs = 0 V or 3.3 V

1.0 1.0 µA max

REV. A

–3–

ADG708/ADG709–SPECIFICATIONS

1

DUAL SUPPLY

(VDD = +2.5 V ⴞ 10%, VSS = –2.5 V ⴞ 10%, GND = 0 V, unless otherwise noted.)

B Version C Version

–40ⴗC –40ⴗC

Parameter +25ⴗC to +85ⴗC +25ⴗC to +85ⴗCUnit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range V
ON Resistance (R

) 2.5 2.5 Ω typ VS = VSS to VDD, IDS = 10 mA;

ON

SS

to V

DD

VSS to V

DD

V

4.5 5 4.5 5 Ω max Test Circuit 1

ON Resistance Match Between 0.4 0.4 Ω typ

Channels (∆R

ON Resistance Flatness (R

)0.80.8Ω max VS = VSS to VDD, IDS = 10 mA

ON

) 0.6 0.6 Ω typ VS = VSS to VDD, IDS = 10 mA

FLAT(ON)

1.0 1.0 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ± 0.01 ±0.01 nA typ VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;

S

= +2.75 V, VSS = –2.75 V

DD

± 20 ± 0.1 ± 0.3 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.01 ±0.01 nA typ VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;

D

± 20 ± 0.1 ± 0.75 nA max Test Circuit 3

Channel ON Leakage I

, IS (ON) ± 0.01 ± 0.01 nA typ VS = VD = +2.25 V/–1.25 V; Test Circuit 4

D

± 20 ± 0.1 ± 0.75 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

1.7 1.7 V min

0.7 0.7 V max

Input Current

I

INL

or I

INH

0.005 0.005 µA typ VIN = V

INL

or V

INH

± 0.1 ±0.1 µA max

CIN, Digital Input Capacitance 2 2 pF typ

DYNAMIC CHARACTERISTICS

t

TRANSITION

2

14 14 ns typ RL = 300 Ω, CL = 35 pF; Test Circuit 5

25 25 ns max VS = 1.5 V/0 V; Test Circuit 5

Break-Before-Make Time Delay, tD88ns typ RL = 300 Ω, CL = 35 pF

11ns min V

= 1.5 V; Test Circuit 6

S

tON(EN) 14 14 ns typ RL = 300 Ω, CL = 35 pF

25 25 ns max V

t

(EN) 8 8 ns typ RL = 300 Ω, CL = 35 pF

OFF

15 15 ns max V

= 1.5 V; Test Circuit 7

S

= 1.5 V; Test Circuit 7

S

Charge Injection ±3 ± 3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF;

Test Circuit 8

Off Isolation –60 –60 dB typ R

–80 –80 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 9

Channel-to-Channel Crosstalk –60 –60 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz

L

–80 –80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;

Test Circuit 10
–3 dB Bandwidth 55 55 MHz typ R
C

(OFF) 13 13 pF typ f = 1 MHz

S

= 50 Ω, CL = 5 pF; Test Circuit 11

L

CD (OFF)

ADG708 85 85 pF typ f = 1 MHz
ADG709 42 42 pF typ f = 1 MHz

C

, CS (ON)

D

ADG708 96 96 pF typ f = 1 MHz
ADG709 48 48 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

0.001 0.001 µA typ Digital Inputs = 0 V or 2.75 V

= 2.75 V

DD

1.0 1.0 µA max

I

SS

0.001 0.001 µA typ VSS = –2.75 V

1.0 1.0 µA max Digital Inputs = 0 V or 2.75 V

NOTES

1

Temperature range is as follows: B and C Versions: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–4–

REV. A