1.8 V to 5.5 V single supply
±2.5 V dual supply
3 Ω on resistance
0.75 Ω on resistance flatness
100 pA leakage currents
14 ns switching times
Single 8-to-1 multiplexer ADG708
Differential 4-to-1 multiplexer ADG709
16-lead TSSOP package
Low power consumption
TTL-/CMOS-compatible inputs
APPLICATIONS
Data acquisition systems
Communication systems
Relay replacement
Audio and video switching
Battery-powered systems
Low Voltage 4-/8-Channel Multiplexers
ADG708/ADG709
FUNCTIONAL BLOCK DIAGRAMS
ADG708
S1A
S4A
S1B
8
1 OF 8
DECODER
A0DA1A2
Figure 1. Figure 2.
EN
S4B
00041-001
ADG709
1 OF 4
DECODER
A0
A1
EN
DA
DB
00041-002
GENERAL DESCRIPTION
The ADG708 and ADG709 are low voltage, CMOS analog
multiplexers comprising eight single channels and four
differential channels, respectively. The ADG708 switches one of
eight inputs (S1 to S8) to a common output, D, as determined
by the 3-bit binary address lines A0, A1, and A2. The ADG709
switches one of four differential inputs to a common differential
output as determined by the 2-bit binary address lines A0 and
A1. An EN input on both devices is used to enable or disable
the device. When disabled, all channels are switched off.
Low power consumption and an operating supply range of
1.8 V to 5.5 V make the ADG708 and ADG709 ideal for
battery-powered, portable instruments. All channels exhibit
break-before-make switching action preventing momentary
shorting when switching channels.
These switches are designed on an enhanced submicron process
that provides low power dissipation yet gives high switching
speed, very low on resistance, and leakage currents.
On resistance is in the region of a few ohms and is closely
matched between switches and very flat over the full signal
range. These parts can operate equally well as either multiplexers
or demultiplexers and have an input signal range that extends to
the supplies.
The ADG708 and ADG709 are available in 16-lead TSSOP
packages.
PRODUCT HIGHLIGHTS
1. Single-/dual-supply operation. The ADG708 and ADG709
are fully specified and guaranteed with 3 V and 5 V single
supply and ±2.5 V dual-supply rails.
2. Low R
3. Low power consumption (<0.01 μW).
4. Guaranteed break-before-make switching action.
5. Small 16-lead TSSOP package.
(3 Ω typical).
ON
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Analog Signal Range 0 V to VDD 0 V to VDD V
On Resistance (RON) 3 3 Ω typ VS = 0 V to VDD, IDS = 10 mA;
4.5 5 4.5 5 Ω max see Figure 20
On Resistance Match Between 0.4 0.4 Ω typ
Channels (ΔRON) 0.8 0.8 Ω max VS = 0 V to VDD, IDS = 10 mA
On Resistance Flatness (R
1.2 1.2 Ω max
LEAKAGE CURRENTS VDD = 5.5 V
Source Off Leakage IS (OFF) ±0.01 ±0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;
±20 ±0.1 ±0.3 nA max see Figure 21
Drain Off Leakage ID (OFF) ±0.01 ±0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;
±20 ±0.1 ±0.75 nA max see Figure 22
Channel On Leakage ID, IS (ON) ±0.01 ±0.01 nA typ VD = VS = 1 V or 4.5 V; see Figure 23
±20 ±0.1 ±0.75 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
I
or I
0.005 0.005 μA typ VIN = V
INL
INH
±0.1 ±0.1 μA max
Digital Input Capacitance, CIN 2 2 pF typ
DYNAMIC CHARACTERISTICS2
t
25 25 ns max VS1 = 3 V/0 V, VS8 = 0 V/3 V
Break-Before-Make Time Delay, t
1 1 ns min VS = 3 V; see Figure 25
tON (EN) 14 14 ns typ RL = 300 Ω, CL = 35 pF
25 25 ns max VS = 3 V; see Figure 26
t
12 12 ns max VS = 3 V; see Figure 26
Charge Injection ±3 ±3 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF;
see Figure 27
Off Isolation −60 −60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−80 −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 28
Channel-to-Channel Crosstalk −60 −60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−80 −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 29
−3 dB Bandwidth 55 55 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30
CS (OFF) 13 13 pF typ f = 1 MHz
CD (OFF)
14 14 ns typ RL = 300 Ω, CL = 35 pF; see Figure 24
TRANSITION
(EN) 7 7 ns typ RL = 300 Ω, CL = 35 pF
OFF
ADG708 85 85 pF typ f = 1 MHz
ADG709 42 42 pF typ f = 1 MHz
INH
0.8 0.8 V max
INL
) 0.75 0.75 Ω typ VS = 0 V to VDD, IDS = 10 mA
FLAT(ON)
2.4 2.4 V min
8 8 ns typ RL = 300 Ω, CL = 35 pF
OPEN
+85°
1
−40°C to
C
+25°C
+85°C
Unit Test Conditions/Comments
or V
INH
INL
Rev. B | Page 3 of 20
ADG708/ADG709
www.BDTIC.com/ADI
B Version C Version
−40°C to
Parameter +25°C
CD, CS (ON)
ADG708 96 96 pF typ f = 1 MHz
ADG709 48 48 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V
IDD 0.001 0.001 μA typ Digital inputs = 0 V or 5.5 V
1.0 1.0 μA max
1
Temperature range is as follows: B Version and C Version: −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Analog Signal Range 0 V to VDD 0 V to VDD V
On Resistance (RON) 8 8 Ω typ VS = 0 V to VDD, IDS = 10 mA;
11 12 11 12 Ω max see Figure 20
On Resistance Match Between 0.4 0.4 Ω typ VS = 0 V to VDD , IDS = 10 mA
Channels (ΔRON) 1.2 1.2 Ω max
LEAKAGE CURRENTS VDD = 3.3 V
Source Off Leakage IS (OFF) ±0.01 ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;
±20 ±0.1 ±0.3 nA max see Figure 21
Drain Off Leakage ID (OFF) ±0.01 ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;
±20 ±0.1 ±0.75 nA max see Figure 22
Channel On Leakage ID, IS (ON) ±0.01 ±0.01 nA typ VS = VD = 1 V or 3 V; see Figure 23
±20 ±0.1 ±0.75 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.0 2.0 V min
INH
0.8 0.8 V max
INL
Input Current
I
or I
0.005 0.005 μA typ VIN = V
INL
INH
±0.1 ±0.1 μA max
Digital Input Capacitance, CIN 2 2 pF typ
DYNAMIC CHARACTERISTICS2
t
18 18 ns typ RL = 300 Ω, CL = 35 pF; see Figure 24
TRANSITION
30 30 ns max VS1 = 2 V/0 V, VS2 = 0 V/2 V
Break-Before-Make Time Delay, t
8 8 ns typ RL = 300 Ω, CL = 35 pF
OPEN
1 1 ns min VS = 2 V; see Figure 25
tON (EN) 18 18 ns typ RL = 300 Ω, CL = 35 pF
30 30 ns max VS = 2 V; see Figure 26
t
(EN) 8 8 ns typ RL = 300 Ω, CL = 35 pF
OFF
15 15 ns max VS = 2 V; see Figure 26
Charge Injection ±3 ±3 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF;
see Figure 27
Off Isolation −60 −60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−80 −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 28
Channel-to-Channel Crosstalk −60 −60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz
−80 −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 29
−3 dB Bandwidth 55 55 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30
CS (OFF) 13 13 pF typ f = 1 MHz
CD (OFF)
ADG708 85 85 pF typ f = 1 MHz
ADG709 42 42 pF typ f = 1 MHz
CD, CS (ON)
ADG708 96 96 pF typ f = 1 MHz
ADG709 48 48 pF typ f = 1 MHz
1
−40°C to
+25°C
Rev. B | Page 5 of 20
+85°C
Unit Test Conditions/Comments
or V
INH
INL
ADG708/ADG709
www.BDTIC.com/ADI
B Version C Version
−40°C to
Parameter +25°C
POWER REQUIREMENTS VDD = 3.3 V
IDD 0.001 0.001 μA typ Digital inputs = 0 V or 3.3 V
1.0 1.0 μA max
1
Temperature ranges are as follows: B Version and C Version: −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
+85°C
+25°C
−40°C to
+85°C
Unit Test Conditions/Comments
Rev. B | Page 6 of 20
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