CMOS, +1.8 V to +5.5 V/ⴞ2.5 V, 2.5 ⍀
S1
S16
A0
D
A3 A1
ADG706
S1A
A0
DA
A1
S8A
S1B
S8B
DB
EN
ADG707
EN A2 A2
1-OF-16
DECODER
1-OF-8
DECODER
a
Low-Voltage, 8-/16-Channel Multiplexers
ADG706/ADG707
FEATURES
+1.8 V to +5.5 V Single Supply
ⴞ 2.5 V Dual Supply
2.5 ⍀ ON Resistance
0.5 ⍀ ON Resistance Flatness
100 pA Leakage Currents
40 ns Switching Times
Single 16-to-1 Multiplexer ADG706
Differential 8-to-1 Multiplexer ADG707
28-Lead TSSOP Package
Low-Power Consumption
TTL/CMOS-Compatible Inputs
APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems
GENERAL DESCRIPTION
The ADG706 and ADG707 are low-voltage, CMOS analog
multiplexers comprising 16 single channels and eight differential
channels, respectively. The ADG706 switches one of 16 inputs
(S1–S16) to a common output, D, as determined by the 4-bit
binary address lines A0, A1, A2, and A3. The ADG707 switches
one of eight differential inputs to a common differential output as
determined by the 3-bit binary address lines A0, A1, and A2.
An EN input on both devices is used to enable or disable the
device. When disabled, all channels are switched OFF.
PRODUCT HIGHLIGHTS
1. Single-/dual-supply operation. The ADG706 and ADG707 are
fully specified and guaranteed with 3 V and 5 V single-supply
and ± 2.5 V dual-supply rails.
2. Low ON resistance (2.5 Ω typical)
3. Low-power consumption (<0.01 µW)
4. Guaranteed break-before-make switching action
5. Small 28-lead TSSOP package
Low-power consumption and operating supply range of 1.8 V to
5.5 V make the ADG706 and ADG707 ideal for battery-powered,
portable instruments. All channels exhibit break-before-make
switching action preventing momentary shorting when switching channels. These devices are also designed to operate from a
dual supply of ± 2.5 V.
These multiplexers are designed on an enhanced submicron process
that provides low-power dissipation yet gives high switching speed,
very low ON resistance, and leakage currents. ON resistance is in
the region of a few ohms and is closely matched between switches
and very flat over the full signal range. These parts can operate
equally well as either multiplexers or demultiplexers and have an
input signal range that extends to the supplies.
The ADG706 and ADG707 are available in small 28-lead TSSOP
packages.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2002
FUNCTIONAL BLOCK DIAGRAMS
1
ADG706/ADG707–SPECIFICATIONS
–40ⴗC
Parameter 25ⴗC to +85ⴗC Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
ON Resistance (R
ON Resistance Match Between 0.3 Ω typ V
Channels (∆R
ON Resistance Flatness (R
LEAKAGE CURRENTS V
Source OFF Leakage I
Drain OFF Leakage I
ADG706 ± 0.4 ± 1.5 nA max Test Circuit 3
ADG707 ± 0.2 ± 1n A max
Channel ON Leakage I
ADG706 ± 0.4 ± 1.5 nA max Test Circuit 4
ADG707 ± 0.2 ± 1n A max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
or I
I
INL
INH
CIN, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS
t
TRANSITION
Break-Before-Make Time Delay, t
(EN) 32 ns typ RL = 300 Ω , CL = 35 pF;
t
ON
(EN) 10 ns typ RL = 300 Ω , CL = 35 pF;
t
OFF
Charge Injection ± 5p C typ V
OFF Isolation –60 dB typ R
Channel-to-Channel Crosstalk –60 dB typ R
–3 dB Bandwidth
ADG706 25 MHz typ R
ADG707 36 MHz typ R
(OFF) 13 pF typ f = 1 MHz
C
S
C
(OFF)
D
ADG706 180 pF typ f = 1 MHz
ADG707 90 pF typ f = 1 MHz
, CS (ON)
C
D
ADG706 200 pF typ f = 1 MHz
ADG707 100 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
NOTES
1
Temperature range is –40° C to +85° C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
) 2.5 Ω typ VS = 0 V to VDD, IDS = 10 mA;
ON
4.5 5 Ω max Test Circuit 1
) 0.8 Ω max
ON
FLAT(ON)
) 0.5 Ω typ VS = 0 V to VDD, IDS = 10 mA
1.2 Ω max
(OFF) ± 0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;
S
± 0.1 ± 0.3 nA max Test Circuit 2
(OFF) ± 0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;
D
, IS (ON) ± 0.01 nA typ VD = VS = 1 V, or 4.5 V;
D
INH
INL
2.4 V min
0.8 V max
0.005 µA typ V IN = V
± 0.1 µ A max
2
40 ns typ RL = 300 Ω , CL = 35 pF, Test Circuit 5;
60 ns max V
D
30 ns typ RL = 300 Ω , CL = 35 pF;
1 ns min V
50 ns max V
14 ns max V
–80 dB typ R
–80 dB typ R
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
(VDD = 5 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)
DD
V
= 0 V to V
S
= 5.5 V
DD
or V
INL
= 3 V/0 V, V
S1
= 3 V, Test Circuit 6
S
= 3 V, Test Circuit 7
S
= 3 V, Test Circuit 7
S
= 1 V, RS = 0 Ω , CL = 1 nF;
S
DD, IDS
INH
S16
= 10 mA
= 0 V/3 V
Test Circuit 8
= 50 Ω , CL = 5 pF, f = 10 MHz;
L
= 50 Ω , CL = 5 pF, f = 1 MHz;
L
Test Circuit 9
= 50 Ω , CL = 5 pF, f = 10 MHz;
L
= 50 Ω , CL = 5 pF, f = 1 MHz;
L
Test Circuit 10
= 50 Ω , CL = 5 pF, Test Circuit 9
L
= 50 Ω , CL = 5 pF, Test Circuit 9
L
= 5.5 V
DD
–2– REV. A
ADG706/ADG707
SPECIFICATIONS
1
(VDD = 3 V ⴞ 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)
–40ⴗC
Parameter 25ⴗC to +85ⴗC Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
ON Resistance (R
)6 Ω typ V S = 0 V to VDD, IDS = 10 mA;
ON
DD
V
11 12 Ω max Test Circuit 1
ON Resistance Match Between 0.4 Ω typ V
Channels (∆R
ON Resistance Flatness (R
) 1.2 Ω max
ON
FLAT(ON)
)3Ω typ V S = 0 V to VDD, IDS = 10 mA
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ± 0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;
S
= 0 V to V
S
= 3.3 V
DD
DD, IDS
= 10 mA
± 0.1 ± 0.3 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ± 0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;
D
ADG706 ± 0.4 ± 1.5 nA max Test Circuit 3
ADG707 ± 0.2 ± 1n A max
Channel ON Leakage I
, IS (ON) ± 0.01 nA typ VS = VD = 1 V or 3 V;
D
ADG706 ± 0.4 ± 1.5 nA max Test Circuit 4
ADG707 ± 0.2 ± 1n A max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.0 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V IN = V
INL
or V
INH
± 0.1 µ A max
CIN, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS
t
TRANSITION
Break-Before-Make Time Delay, t
(EN) 40 ns typ RL = 300 Ω , CL = 35 pF;
t
ON
t
(EN) 20 ns typ RL = 300 Ω , CL = 35 pF;
OFF
Charge Injection ± 5p C typ V
2
45 ns typ RL = 300 Ω , CL = 35 pF, Test Circuit 5
75 ns max V
D
30 ns typ RL = 300 Ω , CL = 35 pF;
1 ns min V
70 ns max V
28 ns max V
= 2 V/0 V, V
S1
= 2 V, Test Circuit 6
S
= 2 V, Test Circuit 7
S
= 2 V, Test Circuit 7
S
= 1 V, RS = 0 Ω , CL = 1 nF;
S
= 0 V/2 V
S16
Test Circuit 8
OFF Isolation –60 dB typ R
–80 dB typ R
= 50 Ω , CL = 5 pF, f = 10 MHz;
L
= 50 Ω , CL = 5 pF, f = 1 MHz;
L
Test Circuit 9
Channel-to-Channel Crosstalk –60 dB typ R
–80 dB typ R
= 50 Ω , CL = 5 pF, f = 10 MHz;
L
= 50 Ω , CL = 5 pF, f = 1 MHz;
L
Test Circuit 10
–3 dB Bandwidth
ADG706 25 MHz typ R
ADG707 36 MHz typ R
(OFF) 13 pF typ f = 1 MHz
C
S
(OFF)
C
D
= 50 Ω , CL = 5 pF, Test Circuit 9
L
= 50 Ω , CL = 5 pF, Test Circuit 9
L
ADG706 180 pF typ f = 1 MHz
ADG707 90 pF typ f = 1 MHz
, CS (ON)
C
D
ADG706 200 pF typ f = 1 MHz
ADG707 100 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
0.001 µA typ Digital Inputs = 0 V or 3.3 V
= 3.3 V
DD
1.0 µA max
NOTES
1
Temperature range is –40° C to +85° C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–3– REV. A
ADG706/ADG707
1
DUAL SUPPLY
Parameter 25ⴗC to +85ⴗC Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
ON Resistance (R
ON Resistance Match Between 0.3 Ω typ V
Channels (∆R
ON Resistance Flatness (R
LEAKAGE CURRENTS V
Source OFF Leakage I
Drain OFF Leakage I
ADG706 ± 0.4 ± 1.5 nA max Test Circuit 3
ADG707 ± 0.2 ± 1n A max
Channel ON Leakage I
ADG706 ± 0.4 ± 1.5 nA max
ADG707 ± 0.2 ± 1n A max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
I
or I
INL
INH
CIN, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS
t
TRANSITION
Break-Before-Make Time Delay, t
t
(EN) 32 ns typ RL = 300 Ω , CL = 35 pF;
ON
t
(EN) 16 ns typ RL = 300 Ω , CL = 35 pF;
OFF
Charge Injection ±8p C typ V
OFF Isolation –60 dB typ R
Channel-to-Channel Crosstalk –60 dB typ R
–3 dB Bandwidth
ADG706 25 MHz typ R
ADG707 36 MHz typ RL = 50 Ω , CL = 5 pF, Test Circuit 9
C
(OFF) 13 pF typ f = 1 MHz
S
C
(OFF)
D
ADG706 180 pF typ f = 1 MHz
ADG707 90 pF typ f = 1 MHz
C
, CS (ON)
D
ADG706 200 pF typ f = 1 MHz
ADG707 100 pF typ f = 1 MHz
POWER REQUIREMENTS
I
DD
I
SS
NOTES
1
Temperature range is –40° C to +85° C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +2.5 V ⴞ 10%, VSS = –2.5 V ⴞ 10%, GND = 0 V, unless otherwise noted.)
–40ⴗC
to V
) 2.5 Ω typ VS = VSS to VDD, IDS = 10 mA;
ON
SS
DD
V
4.5 5 Ω max Test Circuit 1
= VSS to VDD, IDS = 10 mA
) 0.8 Ω max
ON
FLAT(ON)
) 0.5 Ω typ VS = VSS to VDD, IDS = 10 mA
S
1.2 Ω max
= +2.75 V, VSS = –2.75 V
(OFF) ± 0.01 nA typ
S
DD
VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;
± 0.1 ± 0.3 nA max Test Circuit 2
(OFF) ± 0.01 nA typ
D
, IS (ON) ± 0.01 nA typ
D
INH
INL
1.7 V min
0.7 V max
0.005 µA typ V IN = V
VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V;
VS = VD = +2.25 V/–1.25 V, Test Circuit 4
or V
INL
INH
± 0.1 µ A max
2
40 ns typ RL = 300 Ω , CL = 35 pF, Test Circuit 5
60 ns max V
D
15 ns typ RL = 300 Ω , CL = 35 pF;
= 1.5 V/0 V, V
S1
1 ns min VS = 1.5 V, Test Circuit 6
50 ns max V
26 ns max V
= 1.5 V, Test Circuit 7
S
= 1.5 V, Test Circuit 7
S
= 0 V, RS = 0 Ω , CL = 1 nF;
S
Test Circuit 8
= 50 Ω , CL = 5 pF, f = 10 MHz;
–80 dB typ R
L
= 50 Ω , CL = 5 pF, f = 1 MHz;
L
Test Circuit 9
= 50 Ω , CL = 5 pF, f = 10 MHz;
–80 dB typ R
L
= 50 Ω , CL = 5 pF, f = 1 MHz;
L
Test Circuit 10
= 50 Ω , CL = 5 pF, Test Circuit 9
L
0.001 µA typ V DD = +2.75 V
1.0 µ A max Digital Inputs = 0 V or 2.75 V
0.001 µA typ V SS = –2.75 V
1.0 µ A max Digital Inputs = 0 V or 2.75 V
= 0 V/1.5 V
S16
–4– REV. A