0.5 ⍀ On-Resistance Flatness
100 pA Leakage Currents
40 ns Switching Times
Single 16-to-1 Multiplexer ADG706
Differential 8-to-1 Multiplexer ADG707
28-Lead TSSOP Package
Low-Power Consumption
TTL/CMOS-Compatible Inputs
APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems
GENERAL DESCRIPTION
The ADG706 and ADG707 are low-voltage, CMOS analog
multiplexers comprising 16 single channels and eight differential
channels respectively. The ADG706 switches one of 16 inputs
(S1–S16) to a common output, D, as determined by the 4-bit
binary address lines A0, A1, A2, and A3. The ADG707 switches
one of eight differential inputs to a common differential output as
determined by the 3-bit binary address lines A0, A1, and A2.
An EN input on both devices is used to enable or disable the
device. When disabled, all channels are switched OFF.
Low-power consumption and operating supply range of 1.8 V to
5.5 V make the ADG706 and ADG707 ideal for battery-powered,
portable instruments. All channels exhibit break-before-make
switching action preventing momentary shorting when switching channels. These devices are also designed to operate from a
dual supply of ±3 V.
These multiplexers are designed on an enhanced submicron
process that provides low-power dissipation yet gives highswitching speed, very low on resistance and leakage currents.
On resistance is in the region of a few ohms and is closely
matched between switches and very flat over the full signal
range. These parts can operate equally well as either multiplexers
or demultiplexers and have an input signal range which extends
to the supplies.
The ADG706 and ADG707 are available in small 28-lead TSSOP
packages.
8-/16-Channel Multiplexers
ADG706/ADG707
FUNCTIONAL BLOCK DIAGRAMS
ADG706
S1
S16
1-OF-16
DECODER
A1
A0
PRODUCT HIGHLIGHTS
A3
ENA2A2
S1A
S8A
D
S1B
S8B
1. Single/Dual Supply Operation. The ADG706 and ADG707
are fully specified and guaranteed with 3 V and 5 V single
supply and ±3 V dual supply rails.
2. Low On Resistance (2.5 Ω typical).
3. Low-Power Consumption (<0.01 µW).
4. Guaranteed Break-Before-Make Switching Action.
5. Small 28-Lead TSSOP Package.
ADG707
1-OF-8
DECODER
A1
A0
DA
DB
EN
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum
rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG706/ADG707 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
Delay Time Measured Between the 50% and
90% Points of the Digital Inputs and the Switch
“ON” Condition when Switching from One
Address State to Another.
t
(EN)Delay Time Between the 50% and 90% Points
ON
of the EN Digital Input and the Switch “ON”
Condition.
t
(EN)Delay Time Between the 50% and 90% Points
OFF
of the EN Digital Input and the Switch “OFF”
Condition.
t
OPEN
“OFF” Time Measured Between the 80%
Points of Both Switches when Switching from
One Address State to Another.
ChargeA Measure of the Glitch Impulse Transferred
Injectionfrom the Digital Input to the Analog Output
During Switching.
Off IsolationA Measure of Unwanted Signal Coupling
through an “OFF” Switch.
CrosstalkA Measure of Unwanted Signal which is
Coupled through from One Channel to
Another as a Result of Parasitic Capacitance.
BandwidthThe Frequency at which the Output Is
Attenuated by 3 dBs.
On ResponseThe Frequency Response of the “ON” Switch.
InsertionThe Loss Due to the ON Resistance of the
LossSwitch.
–6–REV. 0
Typical Performance Characteristics–ADG706/ADG707
8
7
6
5
4
3
ON RESISTANCE – ⍀
2
1
0
0
15
VD, VS, DRAIN OR SOURCE VOLTAGE – V
VDD = 2.7V
23 4
VDD = 3.3V
VDD = 4.5V
VDD = 5.5V
TA = 25ⴗC
V
= GND
SS
Figure 1. On Resistance as a Function
of V
(VS) for Single Supply
D
8
7
6
VDD = +2.7V
VSS = –2.7V
5
4
3
ON RESISTANCE – ⍀
2
1
0
–30
–2–1123
VD OR VS /DRAIN OR SOURCE VOLTAGE – V
VDD = +3.0V
VSS = –3.0V
TA = 25ⴗC
VDD = +3.3V
VSS = –3.3V
Figure 4. On Resistance as a Function
of VD (VS) for Dual Supply
8
7
6
5
4
3
ON RESISTANCE – ⍀
2
1
0
015234
VD OR VS /DRAIN OR SOURCE VOLTAGE – V
+85ⴗC
–40ⴗC
VDD = 5V
= 0V
V
SS
+25ⴗC
Figure 2. On Resistance as a Function
of VD (VS) for Different Temperatures,
Dual Supply
8
7
6
5
4
3
ON RESISTANCE – ⍀
2
1
0
00.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
–40ⴗC
1.01.52.02.53.0
+85ⴗC
+25ⴗC
VDD = 3V
= 0V
V
SS
Figure 5. On Resistance as a Function
of VD (VS) for Different Temperatures,
Single Supply
8
7
6
5
4
3
ON RESISTANCE – ⍀
2
1
0
–2–1123
–30
VD OR VS /DRAIN OR SOURCE VOLTAGE – V
+85ⴗC
–40ⴗC
VDD = +3.0V
= –3.0V
V
SS
+25ⴗC
Figure 3. On Resistance as a Function
(VS) for Different Temperatures,
of V
D
Single Supply
0.3
VDD = 5V
= 0V
V
SS
0.2
= 25ⴗC
T
A
0.1
0
CURRENT – nA
–0.1
–0.2
015
234
VD (VS) – Volts
ID (OFF)
ID, IS (ON)
IS (OFF)
Figure 6. Leakage Currents as a Function of VD (VS)
0.3
VDD = 3V
0.2
VSS = 0V
= 25ⴗC
T
A
0.1
0
CURRENT – nA
–0.1
–0.2
–0.3
015
ID, IS (ON)
234
VD (VS) – Volts
ID (OFF)
IS (OFF)
Figure 7. Leakage Currents as a Function of VD (VS)
0.3
VDD = +3V
= –3V
CURRENT – nA
0.2
0.1
–0.1
–0.2
–0.3
V
SS
= 25ⴗC
T
A
0
–3
–2–10 123
ID (OFF)
ID, IS (ON)
VOLTAGE – Volts
IS (OFF)
Figure 8. Leakage Currents as a Function of VD (VS)
–7–REV. 0
0.8
VDD = +3V
0.7
= –3V
V
SS
0.6
= +2.25V/–1.25V
V
D
= –1.25V/+2.25V
V
S
0.5
0.4
CURRENT – nA
0.3
0.2
0.1
0
–0.1
ID, IS (ON)
15 25 35 45 55 65 75 85
5
TEMPERATURE – ⴗC
VDD = 5V
V
V
V
ID (OFF)
= GND
SS
= 4.5V/1V
D
= 1V/4.5V
S
IS (OFF)
Figure 9. Leakage Currents as a Function of Temperature
ADG706/ADG707
0.8
0.7
0.6
0.5
0.4
CURRENT – nA
0.3
0.2
0.1
–0.1
0
5
IS (OFF)
15 25 35 45 55 65 75 85
TEMPERATURE – ⴗC
Figure 10. Leakage Currents as a
Function of Temperature
VDD = 3V
= GND
V
SS
VD = 3V/1V
= 1V/3V
V
S
ID (OFF)
ID, IS (ON)
0
ATTENUATION – dB
–10
–2
–4
–6
–8
10k
ADG706
ADG707
100k1M10M100M
FREQUENCY – Hz
Figure 11. On Response vs.
Frequency
10m
TA = 25ⴗC
1m
V
100
CURRENT – A
100n
10
10n
1
1n
10
DD
= –3.0V
V
SS
1001k
= +3.0V
VDD = +5V
VDD = +3V
10k 100k 1M10M
FREQUENCY – Hz
Figure 12. Supply Currents vs. Input
Switching Frequency
ATTENUATION – dB
–100
–120
–20
–40
–60
–80
0
100k1M10M100M
30k
FREQUENCY – Hz
VDD = 5V
= 25ⴗC
T
A
Figure 13. Off Isolation vs. Frequency
20
10
0
–10
QINJ – pC
–20
–30
–40
–30–2 –1 123
V
V
DD
SS
= 3V
= GND
V
= +3.0V
DD
= –3.0V
V
SS
VOLTAGE – V
V
V
DD
SS
= GND
= 5V
45
Figure 14. Charge Injection vs.
Source Voltage
ATTENUATION – dB
–100
–120
–20
–40
–60
–80
0
100k1M10M100M
30k
FREQUENCY – Hz
VDD = 5V
= 25ⴗC
T
A
Figure 15. Crosstalk vs. Frequency
–8–REV. 0
ADG706/ADG707
TEST CIRCUITS
V
S
Test Circuit 1. On Resistance
I
V
S
I
DS
V1
S
S
OFF
A
RON = V1/V
S1
DS
V
V
V
SS
DD
V
SS
DD
S2
S16
V
D
GND
Test Circuit 2. IS (OFF)
V
V
V
SS
DD
V
SS
DD
S1
I
OFF
D
EN
D
0.8V
A
V
DD
D
S2
S16
V
S
GND
Test Circuit 3. ID (OFF)
V
EN
D
0.8V
V
V
S1
S16
V
S
SS
DD
V
SS
DD
ON
I
D
D
A
V
D
2.4V
GND
EN
Test Circuit 4. ID (ON)
V
V
SS
DD
3V
V
V
A3
V
50⍀
IN
A2
A1
A0
2.4V
EN
*SIMILAR CONNECTION FOR ADG707
V
DD
V
DD
A3
V
50⍀
IN
A2
A1
ADG706*
A0
2.4V
EN
SS
DD
S1 THRU S15
ADG706*
GND
S16
S1
V
S1
D
V
S16
D
R
C
L
300⍀
L
35pF
ADDRESS
DRIVE (V
)
IN
0V
V
S1
V
OUT
V
OUT
V
S16
Test Circuit 5. Switching Time of Multiplexer, t
V
SS
V
SS
S1 THRU S15
S16
GND
R
L
300⍀
V
S
DRIVE (V
V
OUT
C
L
35pF
S1
D
D
ADDRESS
V
IN
OUT
3V
)
0V
V
S
50%
90%
t
TRANSITION
TRANSITION
80%80%
50%
t
TRANSITION
90%
*SIMILAR CONNECTION FOR ADG707
Test Circuit 6. Break-Before-Make Delay, t
t
OPEN
OPEN
–9–REV. 0
ADG706/ADG707
V
IN
50⍀
*SIMILAR CONNECTION FOR ADG707
A3
A2
A1
A0
EN
V
DD
V
DD
S2 THRU S16
ADG706*
GND
V
SS
3V
V
SS
S1
V
S
ENABLE
DRIVE (V
)
IN
50%50%
0V
t
(EN)
V
O
D
R
C
L
L
300⍀
35pF
OUTPUT
V
OUT
0V
0.9V
O
t
(EN)
ON
0.9V
OFF
O
Test Circuit 7. Enable Delay, tON (EN), t
DD
DD
ADG706*
GND
V
SS
V
SS
D
C
L
1nF
V
V
A3
A2
A1
A0
S
R
S
V
S
V
EN
IN
*SIMILAR CONNECTION FOR ADG707
Test Circuit 8. Charge Injection
V
DD
V
DD
S16
S1
V
S
A3
A2
A1
ADG706*
A0
V
SS
V
SS
10(VOUT/VS
V
10
D
)
WITH SWITCH
OUT
WITHOUT SWITCH
OUT
EN**
GND
*SIMILAR CONNECTION FOR ADG707
**CONNECT TO 2.4V FOR BANDWIDTH MEASUREMENTS
OFF ISOLATION = 20LOG
OFF ISOLATION = 20LOG
( )
V
R
50⍀
V
OUT
L
Test Circuit 9. OFF Isolation and Bandwidth
(EN)
OFF
3V
LOGIC
INPUT (V
)
IN
0V
V
OUT
V
OUT
Q
= CL ⴛ⌬V
INJ
OUT
A3
A2
A1
ADG706*
A0
50⍀
S1
S2
V
S
S16
GND
⌬V
OUT
V
DD
V
DD
R
50⍀
2.4V
V
OUT
L
EN
D
V
SS
V
SS
*SIMILAR CONNECTION FOR ADG707
CHANNEL-TO-CHANNEL CROSSTALK = 20LOG
10(VOUT/VS
)
Test Circuit 10. Channel-to-Channel Crosstalk
–10–REV. 0
28
15
141
0.386 (9.80)
0.378 (9.60)
0.256 (6.50)
0.246 (6.25)
0.177 (4.50)
0.169 (4.30)
PIN 1
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0.0118 (0.30)
0.0075 (0.19)
0.0256 (0.65)
BSC
0.0433 (1.10)
MAX
0.0079 (0.20)
0.0035 (0.090)
0.028 (0.70)
0.020 (0.50)
8ⴗ
0ⴗ
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
28-Lead TSSOP
(RU-28)
ADG706/ADG707
C3832–8–4/00 (rev. 0)
PRINTED IN U.S.A.
–11–REV. 0
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