Analog Devices ADG704 Datasheet

CMOS

ADG704

S1

S2

S3

S4

D

A0 A1

EN

1 OF 4

DECODER

a

FEATURES
+1.8 V to +5.5 V Single Supply

2.5 ⍀ (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
10-Lead ␮SOIC Package
Fast Switching Times

20 ns

t

ON

13 ns

t

OFF

Typical Power Consumption (<0.01 ␮W)
TTL/CMOS Compatible

APPLICATIONS
Battery Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Data Acquisition System
Video Switching

Low Voltage 4 ⍀, 4-Channel Multiplexer

ADG704

FUNCTIONAL BLOCK DIAGRAM

GENERAL DESCRIPTION

The ADG704 is a CMOS analog multiplexer, comprising four
single channels. This multiplexer is designed on an advanced
submicron process that provides low power dissipation yet gives
high switching speed, low on resistance, low leakage currents
and high bandwidths.

The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.

The ADG704 can operate from a single supply range of +1.8 V
to +5.5 V, making it ideal for use in battery powered instru­ments and with the new generation of DACs and ADCs from
Analog Devices.

The ADG704 switches one of four inputs to a common output,
D, as determined by the 3-bit binary address lines, A0, A1 and
EN. A Logic “0” on the EN pin disables the device.

Each switch of the ADG704 conducts equally well in both
directions when ON. The ADG704 exhibits break-before-make
switching action.

The ADG704 is available in 10-lead µSOIC package.

PRODUCT HIGHLIGHTS

1. +1.8 V to +5.5 V Single Supply Operation.
The ADG704 offers high performance and is fully specified
and guaranteed with +3 V and +5 V supply rails.

2. Very Low R
At supply voltage of +1.8 V, R
temperature range.

3. Low On-Resistance Flatness.

4. –3 dB Bandwidth Greater than 200 MHz.

5. Low Power Dissipation.
CMOS construction ensures low power dissipation.

6. Fast t

7. Break-Before-Make Switching Action.

8. 10-Lead µSOIC Package.

ON/tOFF

(4.5 Ω Max at 5 V, 8 Ω Max at 3 V).

ON

.

is typically 35 Ω over the

ON

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

(VDD = +5 V ⴞ 10%, GND = 0 V. All Specifications –40ⴗC to +85ⴗC, unless

ADG704–SPECIFICATIONS

1

otherwise noted.)

B Version

–40ⴗC to

Parameter +25ⴗC +85ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

) 2.5 Ω typ V

ON

DD

V

= 0 V to VDD, IDS = –10 mA;

S

4 4.5 Ω max Test Circuit 1

On-Resistance Match Between

Channels (∆R

) 0.1 Ω typ V

ON

= 0 V to VDD, IDS = –10 mA

S

0.4 Ω max

On-Resistance Flatness (R

FLAT(ON)

)0.75 Ω typ V

= 0 V to VDD, IDS = –10 mA

S

1.2 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.01 nA typ V

S

= +5.5 V

DD

= 4.5 V/1 V, VD = 1 V/4.5 V;

S

±0.1 ±0.3 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.01 nA typ V

D

= 4.5 V/1 V, VD = 1 V/4.5 V;

S

±0.1 ±0.3 nA max Test Circuit 2

Channel ON Leakage I

, I

(ON) ±0.01 nA typ V

D

S

= VD = 4.5 V or 1 V;

S

±0.1 ±0.3 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ V

IN

= V

INL

or V

INH

±0.1 µA max

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Charge Injection 3 pC typ V

2

14 ns typ R

20 ns max V

6 ns typ R

13 ns max V

D

8 ns typ R

1 ns min V

= 300 Ω, C

L

= 3 V, Test Circuit 4

S

= 300 Ω, C

L

= 3 V, Test Circuit 4

S

= 300 Ω, C

L

= VS2 = 3 V, Test Circuit 5

S1

= 2 V, R

S

= 35 pF

L

= 35 pF

L

= 35 pF

L

= 0 Ω, C

S

= 1 nF;

L

Test Circuit 6

Off Isolation –60 dB typ R

–80 dB typ R

= 50 Ω, C

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

Test Circuit 7

Channel-to-Channel Crosstalk –62 dB typ R

–82 dB typ R

= 50 Ω, C

L

= 50 Ω, C

L

= 5 pF, f = 10 MHz

L

= 5 pF, f = 1 MHz;

L

Test Circuit 8
Bandwidth –3 dB 200 MHz typ R
C

(OFF) 9 pF typ

S

(OFF) 37 pF typ

C

D

= 50 Ω, C

L

= 5 pF; Test Circuit 9

L

CD, CS (ON) 54 pF typ

POWER REQUIREMENTS V

= +5.5 V

DD

Digital Inputs = 0 V or 5 V
I

DD

0.001 µA typ

1.0 µA max

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–2–

REV. A

ADG704

1

SPECIFICATIONS

Parameter +25ⴗC +85ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On-Resistance (R

On-Resistance Match Between

Channels (∆R

On-Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

I

or I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Charge Injection 3 pC typ V

Off Isolation –60 dB typ R

Channel-to-Channel Crosstalk –62 dB typ R

Bandwidth –3 dB 200 MHz typ R
C

(OFF) 9 pF typ

S

C

(OFF) 37 pF typ

D

CD, CS (ON) 54 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

) 4.5 5 Ω typ V

ON

) 0.1 Ω typ V

ON

(OFF) ±0.01 nA typ V

S

(OFF) ±0.01 nA typ V

D

, I

D

INH

INL

(VDD = +3 V ⴞ 10%, GND = 0 V. All Specifications –40ⴗC to +85ⴗC, unless otherwise noted.)

B Version

–40ⴗC to

V

DD

= 0 V to VDD, IDS = –10 mA;

S

8 Ω max Test Circuit 1

= 0 V to VDD, IDS = –10 mA

S

0.4 Ω max

FLAT(ON)

) 2.5 Ω typ V

= 0 V to VDD, IDS = –10 mA

S

= +3.3 V

DD

= 3 V/1 V, VD = 1 V/3 V;

S

±0.1 ±0.3 nA max Test Circuit 2

= 3 V/1 V, VD = 1 V/3 V;

S

±0.1 ±0.3 nA max Test Circuit 2

(ON) ±0.01 nA typ V

S

= VD = 3 V or 1 V;

S

±0.1 ±0.3 nA max Test Circuit 3

2.0 V min

0.4 V max

0.005 µA typ V

IN

= V

INL

or V

±0.1 µA max

2

16 ns typ R

24 ns max V

8 ns typ R

16 ns max V

D

9 ns typ R

1 ns min V

= 300 Ω, C

L

= 2 V, Test Circuit 4

S

= 300 Ω, C

L

= 2 V, Test Circuit 4

S

= 300 Ω, C

L

= VS2 = 2 V, Test Circuit 5

S1

= 1.5 V, R

S

S

Test Circuit 6

= 50 Ω, C

–80 dB typ R

L

= 50 Ω, C

L

L

L

Test Circuit 7

= 50 Ω, C

–82 dB typ R

L

= 50 Ω, C

L

L

L

Test Circuit 8

= 50 Ω, C

L

= +3.3 V

DD

L

Digital Inputs = 0 V or 3 V

0.001 µA typ

1.0 µA max

INH

= 35 pF

L

= 35 pF

L

= 35 pF

L

= 0 Ω, C

= 1 nF;

L

= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz;

= 5 pF, f = 10 MHz
= 5 pF, f = 1 MHz;

= 5 pF; Test Circuit 9

–3–REV. A