1.8 V to 5.5 V single supply
2 Ω (typ) on resistance
Low on-resistance flatness
–3 dB bandwidth > 200 MHz
Rail-to-rail operation
Fast switching times:
18 ns
t
ON
t
12 ns
OFF
Typical power consumption < 0.01 µW
TTL/CMOS compatible
APPLICATIONS
Battery powered systems
Communication systems
Sample hold systems
Audio signal routing
Video switching
Mechanical reed relay replacement
GENERAL DESCRIPTION
The ADG701/ADG702 are monolithic CMOS SPST switches.
These switches are designed on an advanced submicron process
that provides low power dissipation yet high switching speed,
low on resistance, and low leakage currents. In addition, −3 dB
bandwidths of greater than 200 MHz can be achieved.
The ADG701/ADG702 can operate from a single 1.8 V to 5.5 V
supply, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices.
Figure 1 shows that with a logic input of 1, the switch of the
ADG701 is closed, while that of the ADG702 is open. Each
switch conducts equally well in both directions when on.
The ADG701/ADG702 are available in 5-lead SOT-23, 6-lead
SOT-23, and 8-lead MSOP packages.
2 Ω SPST Switches
ADG701/ADG702
FUNCTIONAL BLOCK DIAGRAM
ADG701
D
IN
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Figure 1.
PRODUCT HIGHLIGHTS
1. 1.8 V to 5.5 V single-supply operation. The ADG701/
ADG702 offer high performance, including low on
resistance and fast switching times, and are fully specified
and guaranteed with 3 V and 5 V supply rails.
2. Ver y lo w R
operation, R
3. On resistance flatness R
4. −3 dB bandwidth > 200 MHz.
5. Low power dissipation. CMOS construction ensures low
power dissipation.
6. Fast t
7. Tiny 5-lead SOT-23, 6-lead SOT-23, and 8-lead MSOP
packages.
(3 Ω max at 5 V, 5 Ω max at 3 V). At 1.8 V
ON
is typically 40 Ω over the temperature range.
ON
FLAT(ON)
ON/tOFF.
ADG702
(1 Ω max).
DS
IN
00039-001
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VDD = 5 V ± 10%, GND = 0 V. Temperature range for B version is −40°C to +85°C, unless otherwise noted.
Table 1.
B Version
Parameter +25°C –40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
On Resistance (RON) 2 Ω typ VS = 0 V to VDD, IS = –10 mA; Figure 11
3 4 Ω max
On-Resistance Flatness (R
) 0.5 Ω typ VS = 0 V to VDD, IS = –10 mA
FLAT(ON)
1.0 Ω max
LEAKAGE CURRENTS VDD = 5.5 V
Source OFF Leakage, IS (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; Figure 12
±0.25 ±0.35 nA max
Drain OFF Leakage, ID (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; Figure 12
±0.25 ±0.35 nA max
Channel ON Leakage, ID, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 4.5 V; Figure 13
±0.25 ±0.35 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
2.4 V min
0.8 V max
Input Current
I
or I
INL
INH
0.005 µA typ VIN = V
±0.1 µA max
DYNAMIC CHARACTERISTICS
t
ON
1
12 ns typ RL = 300 Ω , CL = 35 pF
18 ns max VS = 3 V; Figure 14
t
OFF
8 ns typ RL = 300 Ω , CL = 35 pF
12 ns max VS = 3 V; Figure 14
Charge Injection 5 pC typ VS = 2 V, RS = 0 Ω , CL = 1 nF; Figure 15
Off Isolation –55 dB typ RL = 50 Ω , CL = 5 pF, f = 10 MHz
–75 dB typ RL = 50 Ω , CL = 5 pF, f = 1 MHz; Figure 16
Bandwidth –3 dB 200 MHz typ RL = 50 Ω , CL = 5 pF; Figure 17
CS (OFF) 17 pF typ
CD (OFF) 17 pF typ
CD, CS (ON) 38 pF typ
POWER REQUIREMENTS VDD = 5.5 V
Digital inputs = 0 V or 5 V
I
DD
0.001 µA typ
1.0 µA max
V
or V
INL
INH
1
Guaranteed by design, not subject to production test.
Rev. B | Page 3 of 12
ADG701/ADG702
VDD = 3 V ±10%, GND = 0 V. Temperature range for B version is −40°C to +85°C, unless otherwise noted.
Table 2.
B Version
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
On Resistance (RON) 3.5 Ω typ VS = 0 V to VDD, IS = −10 mA; Figure 11
5 6 Ω max
On-Resistance Flatness (R
) 1.5 Ω typ VS = 0 V to VDD, IS = −10 mA
FLAT(ON)
LEAKAGE CURRENTS VDD = 3.3 V
Source OFF Leakage IS(OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V; Figure 12
±0.25 ±0.35 nA max
Drain OFF Leakage ID(OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V; Figure 12
±0.25 ±0.35 nA max
Channel ON Leakage ID, IS(ON) ±0.01 nA typ V = VD = 1 V, or 3 V; Figure 13
±0.25 ±0.35 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
2.0 V min
0.4 V max
Input Current
I
or I
INL
INH
0.005 µA typ VIN = V
±0.1 µA max
DYNAMIC CHARACTERISTICS
t
ON
1
14 ns typ RL = 300 Ω , CL = 35 pF
20 ns max VS = 2 V, Figure 14
t
OFF
8 ns typ RL = 300 Ω , CL = 35 pF
13 ns max VS = 2 V, Figure 14
Charge Injection 4 pC typ VS = 1.5 V, RS = 0 Ω , CL = 1 nF; Figure 15
Off Isolation −55 dB typ RL = 50 Ω , CL = 5 pF, f = 10 MHz
−75 dB typ RL = 50 Ω , CL = 5 pF, f = 1 MHz; Figure 16
Bandwidth −3 dB 200 MHz typ RL = 50 Ω , CL = 5 pF; Figure 17
CS (OFF) 17 pF typ
CD (OFF) 17 pF typ
CD, CS (ON) 38 pF typ
POWER REQUIREMENTS VDD = 3.3 V
Digital Inputs = 0 V or 3 V
I
DD
0.001 µA typ
1.0 µA max
1
Guaranteed by design, not subject to production test.
V
or V
INL
INH
Rev. B | Page 4 of 12
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