Analog Devices ADG661 2 3 Datasheet

LC2MOS

a

FEATURES
+5 V, 65 V Power Supplies
Ultralow Power Dissipation (<0.5 mW)
Low Leakage (<100 pA)
Low On Resistance (<50 V)
Fast Switching Times
Low Charge Injection
TTL/CMOS Compatible
TSSOP Package

APPLICATIONS
Battery Powered Instruments
Single Supply Systems
Remote Powered Equipment
+5 V Supply Systems
Computer Peripherals such as Disk Drives
Precision Instrumentation
Audio and Video Switching
Automatic Test Equipment
Precision Data Acquisition
Sample Hold Systems
Communication Systems

Precision 5 V Quad SPST Switches

ADG661/ADG662/ADG663

FUNCTIONAL BLOCK DIAGRAM

IN1

IN2

ADG661

IN3

IN4

SWITCHES SHOWN FOR A LOGIC "1" INPUT

S1

D1
S2

D2
S3

D3
S4

D4

IN1

IN2

ADG663

IN3

IN4

IN1

IN2

ADG662

IN3

IN4

S1

D1
S2

D2
S3

D3
S4

D4

S1

D1
S2

D2
S3

D3
S4

D4

GENERAL DESCRIPTION

The ADG661, ADG662 and ADG663 are monolithic CMOS
devices comprising four independently selectable switches.
These switches feature low, well-controlled on resistance and
wide analog signal range, making them ideal for precision analog
signal switching.

They are fabricated using Analog Devices' advanced linear
compatible CMOS (LC

2

MOS) process, which offers benefits of
low leakage currents, ultralow power dissipation and low capaci­tance for fast switching speeds with minimum charge injection.

The on resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion when
switching audio signals. Fast switching speed coupled with high
signal bandwidth also make the parts suitable for video signal
switching. CMOS construction ensures ultralow power dissipa­tion making the parts ideally suited for portable and battery
powered instruments.

The ADG661, ADG662 and ADG663 contain four indepen­dent SPST switches. The ADG661 and ADG662 differ only in
that the digital control logic is inverted. The ADG661 switches
are turned on with a logic low on the appropriate control input,
while a logic high is required for the ADG662. The ADG663
has two switches with digital control logic similar to that of the
ADG661, while the logic is inverted on the other two switches.

Each switch conducts equally well in both directions when ON
and has an input signal range that extends to the supplies. In the
OFF condition, signal levels up to the supplies are blocked. All
switches exhibit break-before-make switching action for use in
multiplexer applications. Inherent in the design is low charge
injection for minimum transients when switching the digital
inputs.

PRODUCT HIGHLIGHTS

1. +5 V Single Supply Operation
The ADG661, ADG662 and ADG663 offer high perfor­mance, including low on resistance and wide signal range,
fully specified and guaranteed with ± 5 V and +5 V supply
rails.

2. Ultralow Power Dissipation
CMOS construction ensures ultralow power dissipation.

3. Low R

ON

4. Break-Before-Make Switching
This prevents channel shorting when the switches are config­ured as a multiplexer.

REV. 0

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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

ADG661/ADG662/ADG663–SPECIFICA TIONS

1

Dual Supply

(VDD = +5 V 6 10%, VSS = –5 V 6 10%, GND = 0 V, unless otherwise noted)

B Versions

Parameter +258C–408C to +858C Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VDD to V
R

ON

30 Ω typ VD = –3.5 V to +3.5 V, IS = –10 mA;

SS

38 50 Ω max VDD = +4.5 V, V

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.025 nA typ VD = ±4.5 V, VS = ±4.5 V;

S

V

= –4.5 V

SS

= +5.5 V, VSS = –5.5 V

DD

±0.1 ±2.5 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.025 nA typ VD = ±4.5 V, VS = ±4.5 V;

D

±0.1 ±2.5 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.05 nA typ VD = VS = ±4.5 V;

D

±0.2 ±5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

±0.1 µA max

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

(ADG663 Only) V

Charge Injection 6 pC typ V

2

150 ns typ RL = 300 Ω, CL = 35 pF;

275 ns max V

= ±3 V; Test Circuit 4

S

55 ns typ RL = 300 Ω, CL = 35 pF;

120 ns max V

D

80 ns typ RL = 300 Ω, CL = 35 pF;

= ±3 V; Test Circuit 4

S

= VS2 = +3 V; Test Circuit 5

S1

= 0 V, RS = 0 Ω, CL = 10 nF;

S

Test Circuit 6

OFF Isolation 70 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 7

Channel-to-Channel Crosstalk 90 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 8

C

(OFF) 9 pF typ f = 1 MHz

S

C

(OFF) 9 pF typ f = 1 MHz

D

CD, CS (ON) 28 pF typ f = 1 MHz

POWER REQUIREMENTS

+4.5/5.5 V min/max

V

DD

I

DD

0.0001 µA typ VDD = +5.5 V, VSS = –5.5 V

–4.5/5.5 V min/max
1 µA max Digital Inputs = 0 V or 5 V

I

SS

0.0001 µA typ
1 µA max

NOTES

1

Temperature ranges are as follows: B Versions, –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–2–

REV. 0

ADG661/ADG662/ADG663

Single Supply

(VDD = +5 V 6 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)

B Versions

Parameter +258C–408C to +858C Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
R

ON

45 Ω typ VD = 0 V to +3.5 V, IS = –10 mA;

DD

V

68 75 Ω max VDD = +4.5 V

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.025 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;

S

= +5.5 V

DD

±0.1 ±2.5 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.025 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V;

D

±0.1 ±2.5 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.05 nA typ VD = VS = +4.5 V/+1 V;

D

±0.2 ±5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

±0.1 µA max

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

(ADG663 Only) V

Charge Injection 12 pC typ V

2

250 ns typ RL = 300 Ω, CL = 35 pF;

400 ns max V

= +2 V; Test Circuit 4

S

45 ns typ RL = 300 Ω, CL = 35 pF;

100 ns max V

D

140 ns typ RL = 300 Ω, CL = 35 pF;

= +2 V; Test Circuit 4

S

= VS2 = +2 V; Test Circuit 5

S1

= 0 V, RS = 0 Ω, CL = 10 nF;

S

Test Circuit 6

OFF Isolation 70 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 7

Channel-to-Channel Crosstalk 90 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 8

C

(OFF) 9 pF typ f = 1 MHz

S

C

(OFF) 9 pF typ f = 1 MHz

D

CD, CS (ON) 28 pF typ f = 1 MHz

POWER REQUIREMENTS

V

DD

I

DD

0.0001 µA typ VDD = +5.5 V

+4.5/5.5 V min/max
1 µA max Digital Inputs = 0 V or 5 V

NOTES

1

Temperature ranges are as follows: B Versions, –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–3–REV. 0