±2 V to ±6 V dual supply
2 V to 12 V single supply
Automotive temperature range −40°C to +125°C
<0.1 nA leakage currents
45 Ω on resistance over full signal range
Rail-to-rail switching operation
Single 8-to-1 multiplexer ADG658
Differential 4-to-1 multiplexer ADG659
16-lead LFCSP/TSSOP/QSOP packages
Typical power consumption <0.1 μW
TTL/CMOS compatible inputs
Package upgrades to 74HC4051/74HC4052 and
MAX4051/MAX4052/MAX4581/MAX4582
APPLICATIONS
Automotive applications
Automatic test equipment
Data acquisition systems
Battery-powered systems
Communication systems
Audio and video signal routing
Relay replacement
Sample-and-hold systems
Industrial control systems
Analog Multiplexers
ADG658/ADG659
FUNCTIONAL BLOCK DIAGRAM
ADG658
S1
8
1 OF 8
DECODER
EN
SWITCHES SHOWN FOR A LOGIC 1 INPUT
S1A
S4A
D
S1B
S4B
Figure 1.
ADG659
1 OF 4
DECODER
A0A1ENA0 A1 A2
DA
DB
03273-0-001
GENERAL DESCRIPTION
The ADG658 and ADG659 are low voltage, CMOS analog
multiplexers comprised of eight single channels and four
differential channels, respectively. The ADG658 switches one of
eight inputs (S1–S8) to a common output, D, as determined by
the 3-bit binary address lines A0, A1, and A2. The ADG659
switches one of four differential inputs to a common differential
output, as determined by the 2-bit binary address lines A0 and
EN
A1. An
the device. When disabled, all channels are switched off.
These parts are designed on an enhanced process that provides
lower power dissipation yet gives high switching speeds. These parts
can operate equally well as either multiplexers or demultiplexers
and have an input range that extends to the supplies. All
channels exhibit break-before-make switching action, preventing
momentary shorting when switching channels. All digital inputs
have 0.8 V to 2.4 V logic thresholds, ensuring TTL/CMOS logic
compatibility when using single +5 V or dual ±5 V supplies.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
input on both devices is used to enable or disable
The ADG658 and ADG659 are available in 16-lead TSSOP/
QSOP packages and 16-lead 4 mm × 4 mm LFCSP packages.
PRODUCT HIGHLIGHTS
1. Single- and dual-supply operation. The ADG658 and
ADG659 offer high performance and are fully specified
and guaranteed with ±5 V, +5 V, and +3 V supply rails.
2. Automotive temperature range −40°C to +125°C.
3. Low power consumption, typically <0.1 μW.
4. 16-lead 4 mm × 4 mm LFCSP packages, 16-lead TSSOP
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
B Version Y Version
−40°C
Parameter +25°C
to +85°C
ANALOG SWITCH
Analog Signal Range VSS to VDD V VDD = +4.5 V, VSS = −4.5 V
On Resistance (RON) 45 Ω typ VS = ±4.5 V, IS = 1 mA; see Figure 21
75 90 100 Ω max
On Resistance Match between 1.3 Ω typ
Channels (∆RON) 3 3.2 3.5 Ω max VS = 3.5 V, IS = 1 mA
On Resistance Flatness (R
) 10 Ω typ VDD = +5 V, VSS = −5 V;
FLAT(ON)
16 17 18 Ω max VS = ±3 V, IS = 1 mA
LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V
Source OFF Leakage IS (OFF) ±0.005 nA typ VD = ±4.5 V, VS = 4.5 V; see mFigure 22
±0.2 ±5 nA max
Drain OFF Leakage ID (OFF) ±0.005 nA typ VD = ±4.5 V, VS = 4.5 V; see mFigure 23
ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max
Channel ON Leakage ID, IS (ON) ±0.005 nA typ VD = VS = ±4.5 V; see Figure 24
ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.4 V min
INH
0.8 V max
INL
Input Current
I
or I
0.005 μA typ VIN = V
INL
INH
±1 μA max
CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS1
t
80 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
115 140 165 ns max VS = 3 V; see Figure 25
tON (EN)
80 ns typ R
115 140 165 ns max VS = 3 V; see Figure 27
t
(EN)
OFF
30 ns typ R
45 50 55 ns max VS = 3 V; see Figure 27
Break-Before-Make Time Delay, t
50 ns typ RL = 300 Ω, CL = 35 pF
BBM
10 ns min VS1 = VS2 = 3 V; see Figure 26
Charge Injection 2 pC typ VS = 0 V, RS = 0 Ω,
4 pC max CL = 1 nF; see Figure 28
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29
Total Harmonic Distortion, THD + N 0.025 % typ RL = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz
Channel-to-Channel Crosstalk
(ADG659)
−90 dB typ R
−3 dB Bandwidth
ADG658 210 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30
ADG659 400 MHz typ
−40°C
to+125°C Unit Test Conditions/Comments
or V
INH
INL
= 300 Ω, CL = 35 pF
L
= 300 Ω, CL = 35 pF
L
= 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31
L
Rev. B | Page 3 of 20
ADG658/ADG659
B Version Y Version
−40°C
Parameter +25°C
to +85°C
CS (OFF) 4 pF typ f = 1 MHz
CD (OFF)
ADG658 23 pF typ f = 1 MHz
ADG659 12 pF typ f = 1 MHz
CD, CS (ON)
ADG658 28 pF typ f = 1 MHz
ADG659 16 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V
IDD 0.01 μA typ Digital Inputs = 0 V or 5.5 V
1 μA max
ISS 0.01 μA typ Digital Inputs = 0 V or 5.5 V
1 μA max
1
Guaranteed by design; not subject to production test.
Analog Signal Range 0 to VDD V VDD = 4.5 V, VSS = 0 V
On Resistance (RON) 85 Ω typ VS = 0 V to 4.5 V, IS = 1 mA; see Figure 21
150 160 200 Ω max
On Resistance Match between 4.5 Ω typ VS = 3.5 V, IS = 1 mA
Channels (∆RON) 8 9 10 Ω max
On Resistance Flatness (R
) 13 14 16 Ω typ VDD = 5 V, VSS = 0 V, VS = 1.5 V to 4 V, IS = 1 mA
FLAT(ON)
LEAKAGE CURRENTS VDD = 5.5 V
Source OFF Leakage IS (OFF) ±0.005 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 22
±0.2 ±5 nA max
Drain OFF Leakage ID (OFF) ±0.005 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 23
ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max
Channel ON Leakage ID, IS (ON) ±0.005 nA typ VS = VD = 1 V or 4.5 V, see Figure 24
ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.4 V min
INH
0.8 V max
INL
Input Current
I
or I
0.005 μA typ VIN = V
INL
INH
±1 μA max
CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS1
t
120 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
200 270 300 ns max VS = 3 V; see Figure 25
tON (EN)
120 ns typ R
190 245 280 ns max VS = 3 V; see Figure 27
t
(EN)
OFF
35 ns typ R
50 60 70 ns max VS = 3 V; see Figure 27
Break-Before-Make Time Delay, t
100 ns typ RL = 300 Ω, CL = 35 pF
BBM
10 ns min VS1 = VS2 = 3 V; see Figure 26
Charge Injection 0.5 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF; see Figure 28
1 pC max
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF; f = 1 MHz; see Figure 31
(ADG659)
−3 dB Bandwidth
ADG658 180 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30
ADG659 330 MHz typ
CS (OFF) 5 pF typ f = 1 MHz
CD (OFF)
ADG658 29 pF typ f = 1 MHz
ADG659 15 pF typ f = 1 MHz
−40°C
to +125°C Unit Test Conditions/Comments
or V
INH
INL
= 300 Ω, CL = 35 pF
L
= 300 Ω, CL = 35 pF
L
Rev. B | Page 5 of 20
ADG658/ADG659
B Version Y Version
−40°C
Parameter +25°C
to +85°C
CD, CS (ON)
ADG658 30 pF typ f = 1 MHz
ADG659 16 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V
IDD 0.01 μA typ Digital Inputs = 0 V or 5.5 V
1 μA max
1
Guaranteed by design; not subject to production test.
−40°C
to +125°C
Unit Test Conditions/Comments
Rev. B | Page 6 of 20
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