±2 V to ±6 V dual supply
2 V to 12 V single supply
Automotive temperature range −40°C to +125°C
<0.1 nA leakage currents
45 Ω on resistance over full signal range
Rail-to-rail switching operation
Single 8-to-1 multiplexer ADG658
Differential 4-to-1 multiplexer ADG659
16-lead LFCSP/TSSOP/QSOP packages
Typical power consumption <0.1 µW
TTL/CMOS compatible inputs
Package upgrades to 74HC4051/74HC4052 and
MAX4051/MAX4052/MAX4581/MAX4582
APPLICATIONS
Automotive applications
Automatic test equipment
Data acquisition systems
Battery-powered systems
Communication systems
Audio and video signal routing
Relay replacement
Sample-and-hold systems
Industrial control systems
GENERAL DESCRIPTION
The ADG658 and ADG659 are low voltage, CMOS analog
multiplexers comprised of eight single channels and four
differential channels, respectively. The ADG658 switches one of
eight inputs (S1–S8) to a common output, D, as determined by
the 3-bit binary address lines A0, A1, and A2. The ADG659
switches one of four differential inputs to a common differential
output, as determined by the 2-bit binary address lines A0 and
EN
A1. An
the device. When disabled, all channels are switched off.
These parts are designed on an enhanced process that provides
lower power dissipation yet gives high switching speeds. These
parts can operate equally well as either multiplexers or
input on both devices is used to enable or disable
Analog Multiplexers
ADG658/ADG659
demultiplexers and have an input range that extends to the
supplies. All channels exhibit break-before-make switching
action, preventing momentary shorting when switching
channels. All digital inputs have 0.8 V to 2.4 V logic thresholds,
ensuring TTL/CMOS logic compatibility when using single
+5 V or dual ±5 V supplies.
The ADG658 and ADG659 are available in 16-lead TSSOP/
QSOP packages and 16-lead 4 mm × 4 mm LFCSP packages.
PRODUCT HIGHLIGHTS
1. Single- and dual-supply operation.
The ADG658 and ADG659 offer high performance and are
fully specified and guaranteed with ±5 V, +5 V, and +3 V
supply rails.
2. Automotive temperature range −40°C to +125°C.
3. Low power consumption, typically <0.1 µW.
4. 16-lead 4 mm × 4 mm LFCSP packages, 16-lead TSSOP
package and 16-lead QSOP package.
FUNCTIONAL BLOCK DIAGRAM
A0A1ENA0 A1 A2
Figure 1.
ADG659
1 OF 4
DECODER
DA
DB
03273-0-001
ADG658
S1
8
1 OF 8
DECODER
EN
SWITCHES SHOWN FOR A LOGIC 1 INPUT
S1A
S4A
D
S1B
S4B
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
Analog Signal Range VSS to V
On Resistance (RON) 45 Ω typ VS = ±4.5 V, IS = 1 mA;
75 90 100 Ω max Test Circuit 1
On Resistance Match between 1.3 Ω typ
Channels (∆RON) 3 3.2 3.5 Ω max VS = 3.5 V, IS = 1 mA
On Resistance Flatness (R
) 10 Ω typ VDD = +5 V, VSS = −5 V;
FLAT(ON)
16 17 18 Ω max VS = ±3 V, IS = 1 mA
LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V
Source OFF Leakage IS (OFF) ±0.005 nA typ
±0.2 ±5 nA max Test Circuit 2
Drain OFF Leakage ID (OFF) ±0.005 nA typ
ADG658 ±0.2 ±5 nA max Test Circuit 3
ADG659 ±0.1 ±2.5 nA max
Channel ON Leakage ID, IS (ON) ±0.005 nA typ VD = VS = ±4.5 V; Test Circuit 4
ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
2.4 V min
0.8 V max
Input Current
I
or I
INL
INH
0.005 µA typ VIN = V
±1 µA max
CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
t
TRANS
2
80 ns typ RL = 300 Ω, CL = 35 pF
115 140 165 ns max VS = 3 V; Test Circuit 5
tON (EN)
80 ns typ R
115 140 165 ns max VS = 3 V; Test Circuit 7
t
(EN)
OFF
30 ns typ R
45 50 55 ns max VS = 3 V; Test Circuit 7
Break-Before-Make Time Delay, t
BBM
50 ns typ RL = 300 Ω, CL = 35 pF
10 ns min VS1 = VS2 = 3 V; Test Circuit 6
Charge Injection 2 pC typ VS = 0 V, RS = 0 Ω,
4 pC max CL = 1 nF; Test Circuit 8
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9
Total Harmonic Distortion, THD + N 0.025 % typ RL = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz
Channel-to-Channel Crosstalk
(ADG659) −90 dB typ R
−3 dB Bandwidth
ADG658 210 MHz typ RL = 50 Ω, CL = 5 pF;
ADG659 400 MHz typ Test Circuit 10
CS (OFF) 4 pF typ f = 1 MHz
CD (OFF)
ADG658 23 pF typ f = 1 MHz
ADG659 12 pF typ f = 1 MHz
1
Y Version
−40°C
to+125°C Unit Test Conditions/Comments
V VDD = +4.5 V, VSS = −4.5 V
DD
= ±4.5 V, VS = 4.5 V;
V
D
= ±4.5 V, VS = 4.5 V;
V
D
or V
INL
= 300 Ω, CL = 35 pF
L
= 300 Ω, CL = 35 pF
L
= 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 11
L
m
m
INH
Rev. A | Page 3 of 20
ADG658/ADG659
B Version
−40°C
Parameter +25°C
to +85°C
CD, CS (ON)
ADG658 28 pF typ f = 1 MHz
ADG659 16 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V
I
DD
0.01 µA typ Digital Inputs = 0 V or 5.5 V
1 µA max
I
SS
0.01 µA typ Digital Inputs = 0 V or 5.5 V
1 µA max
1
Temperature range is as follows: B Version: −40°C to +85°C. Y Version: −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
Analog Signal Range 0 to V
On Resistance (RON) 85 Ω typ VS = 0 V to 4.5 V, IS = 1 mA;
150 160 200 Ω max Test Circuit 1
On Resistance Match between 4.5 Ω typ VS = 3.5 V, IS = 1 mA
Channels (∆RON) 8 9 10 Ω max
On Resistance Flatness (R
) 13 14 16 Ω typ
FLAT(ON)
LEAKAGE CURRENTS VDD = 5.5 V
Source OFF Leakage IS (OFF) ±0.005 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V;
±0.2 ±5 nA max Test Circuit 2
Drain OFF Leakage ID (OFF) ±0.005 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V;
ADG658 ±0.2 ±5 nA max Test Circuit 3
ADG659 ±0.1 ±2.5 nA max
Channel ON Leakage ID, IS (ON) ±0.005 nA typ VS = VD = 1 V or 4.5 V, Test Circuit 4
ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
2.4 V min
0.8 V max
Input Current
I
or I
INL
INH
0.005 µA typ VIN = V
±1 µA max
CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
t
TRANS
2
120 ns typ RL = 300 Ω, CL = 35 pF
200 270 300 ns max VS = 3 V; Test Circuit 5
tON (EN)
120 ns typ R
190 245 280 ns max VS = 3 V; Test Circuit 7
t
(EN)
OFF
35 ns typ R
50 60 70 ns max VS = 3 V; Test Circuit 7
Break-Before-Make Time Delay, t
100 ns typ RL = 300 Ω, CL = 35 pF
BBM
10 ns min VS1 = VS2 = 3 V; Test Circuit 6
Charge Injection 0.5 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF;
1 pC max Test Circuit 8
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF; f = 1 MHz;
(ADG659) Test Circuit 11
−3 dB Bandwidth
ADG658 180 MHz typ RL = 50 Ω, CL = 5 pF;
ADG659 330 MHz typ Test Circuit 10
CS (OFF) 5 pF typ f = 1 MHz
CD (OFF)
ADG658 29 pF typ f = 1 MHz
ADG659 15 pF typ f = 1 MHz
1
Y Version
−40°C
to +125°C Unit Test Conditions/Comments
DD
V VDD = 4.5 V, VSS = 0 V
= 5 V, VSS = 0 V
V
DD
= 1.5 V to 4 V, IS = 1 mA
V
S
or V
INL
INH
= 300 Ω, CL = 35 pF
L
= 300 Ω, CL = 35 pF
L
Rev. A | Page 5 of 20
ADG658/ADG659
C
, CS (ON)
D
ADG658 30 pF typ f = 1 MHz
ADG659 16 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V
I
DD
1 µA max
1
Temperature range is as follows: B Version: −40°C to +85°C. Y Version: −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
0.01 µA typ Digital Inputs = 0 V or 5.5 V
Rev. A | Page 6 of 20
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