ANALOG DEVICES ADG658 Service Manual

+3 V/+5 V/±5 V CMOS 4- and 8-Channel
S
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FEATURES

±2 V to ±6 V dual supply 2 V to 12 V single supply Automotive temperature range −40°C to +125°C <0.1 nA leakage currents 45 Ω on resistance over full signal range Rail-to-rail switching operation Single 8-to-1 multiplexer ADG658 Differential 4-to-1 multiplexer ADG659 16-lead LFCSP/TSSOP/QSOP packages Typical power consumption <0.1 µW TTL/CMOS compatible inputs Package upgrades to 74HC4051/74HC4052 and
MAX4051/MAX4052/MAX4581/MAX4582

APPLICATIONS

Automotive applications Automatic test equipment Data acquisition systems Battery-powered systems Communication systems Audio and video signal routing Relay replacement Sample-and-hold systems Industrial control systems

GENERAL DESCRIPTION

The ADG658 and ADG659 are low voltage, CMOS analog multiplexers comprised of eight single channels and four differential channels, respectively. The ADG658 switches one of eight inputs (S1–S8) to a common output, D, as determined by the 3-bit binary address lines A0, A1, and A2. The ADG659 switches one of four differential inputs to a common differential output, as determined by the 2-bit binary address lines A0 and
EN
A1. An the device. When disabled, all channels are switched off.
These parts are designed on an enhanced process that provides lower power dissipation yet gives high switching speeds. These parts can operate equally well as either multiplexers or
input on both devices is used to enable or disable
Analog Multiplexers
ADG658/ADG659
demultiplexers and have an input range that extends to the supplies. All channels exhibit break-before-make switching action, preventing momentary shorting when switching channels. All digital inputs have 0.8 V to 2.4 V logic thresholds, ensuring TTL/CMOS logic compatibility when using single +5 V or dual ±5 V supplies.
The ADG658 and ADG659 are available in 16-lead TSSOP/ QSOP packages and 16-lead 4 mm × 4 mm LFCSP packages.

PRODUCT HIGHLIGHTS

1. Single- and dual-supply operation. The ADG658 and ADG659 offer high performance and are fully specified and guaranteed with ±5 V, +5 V, and +3 V supply rails.
2. Automotive temperature range −40°C to +125°C.
3. Low power consumption, typically <0.1 µW.
4. 16-lead 4 mm × 4 mm LFCSP packages, 16-lead TSSOP package and 16-lead QSOP package.
FUNCTIONAL BLOCK DIAGRAM
A0 A1 ENA0 A1 A2
Figure 1.
ADG659
1 OF 4
DECODER
DA
DB
03273-0-001
ADG658
S1
8
1 OF 8
DECODER
EN
SWITCHES SHOWN FOR A LOGIC 1 INPUT
S1A
S4A
D
S1B
S4B
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
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TABLE OF CONTENTS
Specifications: Dual Supply............................................................. 3
Pin Configuration and Function Descriptions........................... 11
Specifications: Single Supply 5V..................................................... 5
Specifications: Single Supply 2.7 to 3.6 V...................................... 7
Absolute Maximum Ratings............................................................ 9
ESD Caution.................................................................................. 9
REVISION HISTORY
7/04—Data Sheet Changed from Rev. 0 to Rev. A
Updated Format.............................................................. Universal
Added QSOP Package Outline ..................................................20
Changes to Ordering Guide....................................................... 20
3/03—Rev. 0: Initial Version
Typical Perfor m a n c e Ch a r ac t e r is t ic s ........................................... 13
Test Ci rc u its ................................................................................ 16
Outline Dimensions ....................................................................... 19
Ordering Guide .......................................................................... 20
Rev. A | Page 2 of 20
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SPECIFICATIONS: DUAL SUPPLY

VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted. Table 1.
B Version
−40°C
Parameter +25°C
to +85°C
ANALOG SWITCH
Analog Signal Range VSS to V On Resistance (RON) 45 typ VS = ±4.5 V, IS = 1 mA; 75 90 100 Ω max Test Circuit 1 On Resistance Match between 1.3 Ω typ Channels (∆RON) 3 3.2 3.5 max VS = 3.5 V, IS = 1 mA On Resistance Flatness (R
) 10 typ VDD = +5 V, VSS = −5 V;
FLAT(ON)
16 17 18 max VS = ±3 V, IS = 1 mA LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V
Source OFF Leakage IS (OFF) ±0.005 nA typ ±0.2 ±5 nA max Test Circuit 2
Drain OFF Leakage ID (OFF) ±0.005 nA typ
ADG658 ±0.2 ±5 nA max Test Circuit 3 ADG659 ±0.1 ±2.5 nA max
Channel ON Leakage ID, IS (ON) ±0.005 nA typ VD = VS = ±4.5 V; Test Circuit 4
ADG658 ±0.2 ±5 nA max ADG659 ±0.1 ±2.5 nA max
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INH
INL
2.4 V min
0.8 V max
Input Current
I
or I
INL
INH
0.005 µA typ VIN = V ±1 µA max CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
t
TRANS
2
80 ns typ RL = 300 Ω, CL = 35 pF 115 140 165 ns max VS = 3 V; Test Circuit 5 tON (EN)
80 ns typ R 115 140 165 ns max VS = 3 V; Test Circuit 7 t
(EN)
OFF
30 ns typ R 45 50 55 ns max VS = 3 V; Test Circuit 7 Break-Before-Make Time Delay, t
BBM
50 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 3 V; Test Circuit 6 Charge Injection 2 pC typ VS = 0 V, RS = 0 Ω, 4 pC max CL = 1 nF; Test Circuit 8 Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9 Total Harmonic Distortion, THD + N 0.025 % typ RL = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz
Channel-to-Channel Crosstalk (ADG659) −90 dB typ R
−3 dB Bandwidth
ADG658 210 MHz typ RL = 50 Ω, CL = 5 pF;
ADG659 400 MHz typ Test Circuit 10 CS (OFF) 4 pF typ f = 1 MHz CD (OFF)
ADG658 23 pF typ f = 1 MHz
ADG659 12 pF typ f = 1 MHz
1
Y Version
−40°C to+125°C Unit Test Conditions/Comments
V VDD = +4.5 V, VSS = −4.5 V
DD
= ±4.5 V, VS = 4.5 V;
V
D
= ±4.5 V, VS = 4.5 V;
V
D
or V
INL
= 300 Ω, CL = 35 pF
L
= 300 Ω, CL = 35 pF
L
= 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 11
L
m
m
INH
Rev. A | Page 3 of 20
ADG658/ADG659
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B Version
−40°C
Parameter +25°C
CD, CS (ON)
ADG658 28 pF typ f = 1 MHz ADG659 16 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V
I
DD
1 µA max
I
SS
1 µA max
0.01 µA typ Digital Inputs = 0 V or 5.5 V
0.01 µA typ Digital Inputs = 0 V or 5.5 V
to +85°C
1
Temperature range is as follows: B Version: −40°C to +85°C. Y Version: −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
Y Version
−40°C to+125°C Unit Test Conditions/Comments
Rev. A | Page 4 of 20
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SPECIFICATIONS: SINGLE SUPPLY 5V

VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 2.
B Version
−40°C
Parameter +25°C
to +85°C
ANALOG SWITCH
Analog Signal Range 0 to V On Resistance (RON) 85 typ VS = 0 V to 4.5 V, IS = 1 mA; 150 160 200 Ω max Test Circuit 1 On Resistance Match between 4.5 Ω typ VS = 3.5 V, IS = 1 mA Channels (∆RON) 8 9 10 max On Resistance Flatness (R
) 13 14 16 typ
FLAT(ON)
LEAKAGE CURRENTS VDD = 5.5 V
Source OFF Leakage IS (OFF) ±0.005 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; ±0.2 ±5 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) ±0.005 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V;
ADG658 ±0.2 ±5 nA max Test Circuit 3
ADG659 ±0.1 ±2.5 nA max Channel ON Leakage ID, IS (ON) ±0.005 nA typ VS = VD = 1 V or 4.5 V, Test Circuit 4
ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INH
INL
2.4 V min
0.8 V max
Input Current
I
or I
INL
INH
0.005 µA typ VIN = V ±1 µA max CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
t
TRANS
2
120 ns typ RL = 300 Ω, CL = 35 pF 200 270 300 ns max VS = 3 V; Test Circuit 5 tON (EN)
120 ns typ R 190 245 280 ns max VS = 3 V; Test Circuit 7 t
(EN)
OFF
35 ns typ R 50 60 70 ns max VS = 3 V; Test Circuit 7 Break-Before-Make Time Delay, t
100 ns typ RL = 300 Ω, CL = 35 pF
BBM
10 ns min VS1 = VS2 = 3 V; Test Circuit 6 Charge Injection 0.5 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF; 1 pC max Test Circuit 8 Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9 Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF; f = 1 MHz;
(ADG659) Test Circuit 11
−3 dB Bandwidth
ADG658 180 MHz typ RL = 50 Ω, CL = 5 pF;
ADG659 330 MHz typ Test Circuit 10 CS (OFF) 5 pF typ f = 1 MHz CD (OFF)
ADG658 29 pF typ f = 1 MHz
ADG659 15 pF typ f = 1 MHz
1
Y Version
−40°C to +125°C Unit Test Conditions/Comments
DD
V VDD = 4.5 V, VSS = 0 V
= 5 V, VSS = 0 V
V
DD
= 1.5 V to 4 V, IS = 1 mA
V
S
or V
INL
INH
= 300 Ω, CL = 35 pF
L
= 300 Ω, CL = 35 pF
L
Rev. A | Page 5 of 20
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C
, CS (ON)
D
ADG658 30 pF typ f = 1 MHz ADG659 16 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V
I
DD
1 µA max
1
Temperature range is as follows: B Version: −40°C to +85°C. Y Version: −40°C to +125°C.
2
Guaranteed by design; not subject to production test.
0.01 µA typ Digital Inputs = 0 V or 5.5 V
Rev. A | Page 6 of 20
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