ANALOG DEVICES ADG636 Service Manual

1 pC Charge Injection, 100 pA Leakage,

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FEATURES

1 pC charge injection
±2.7 V to ±5.5 V dual supply
+2.7 V to +5.5 V single supply
Automotive temperature range: −40°C to +125°C
100 pA (maximum at 25°C) leakage currents
85 Ω typical on resistance
Rail-to-rail operation
Fast switching times
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
14-lead TSSOP package

APPLICATIONS

Automatic test equipment
Data acquisition systems
Battery-powered instruments
Communication systems
Sample-and-hold systems
Remote-powered equipment
Audio and video signal routing
Relay replacement
Avio nics

CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch

ADG636

FUNCTIONAL BLOCK DIAGRAM

ADG636

4

S1A

S1B

S2A

S2B

5

11

10

LOGIC

14

1

A0

A1

Figure 1.

EN

6

D1

9

D2

2

02754-001

GENERAL DESCRIPTION

The ADG636 is a monolithic device, comprising two indepen­dently selectable CMOS single pole, double throw (SPDT)
switches. When on, each switch conducts equally well in both
directions.

The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.

This switch offers ultralow charge injection of ±1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
In addition, it offers on resistance of 85 Ω typical, which is matched
to within 2 Ω between channels. The ADG636 also has low power
dissipation yet is capable of high switching speeds.

The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.

PRODUCT HIGHLIGHTS

1. Ultralow charge injection. Q

full signal range.

2. Leakage current <0.25 nA maximum at 85°C.

3. Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply.

4. Automotive temperature range: −40°C to +125°C.

5. Small 14-lead TSSOP package.

: ±1.5 pC typical over the

INJ

Rev. A

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rights of third parties that may result from its use. Specifications subject to change without notice. No
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Tel: [phone] www.analog.com
Fax: [phone] ©2002–2008 Analog Devices, Inc. All rights reserved.

ADG636

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TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1 

Functional Block Diagram .............................................................. 1

General Description ......................................................................... 1

Product Highlights ........................................................................... 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

Dual Supply ................................................................................... 3

Single Supply ................................................................................. 5

REVISION HISTORY

8/08—Rev. 0 to Rev. A

Updated Format .................................................................. Universal

Changes to Analog Switch Parameter ............................................ 3

Changes to Analog Switch Parameter ............................................ 5

Changes to Analog Switch Parameter ............................................ 7

Change to I

Changes to Absolute Maximum Ratings ....................................... 9

Added Table 5; Renumbered Sequentially .................................. 10

Moved Truth Table ......................................................................... 10

Added Endnote to Table 6 ............................................................. 10

Changes to Figure 19 ...................................................................... 13

Updated Outline Dimensions ....................................................... 16

Changes to Ordering Guide .......................................................... 16

1/02—Revision 0: Initial Version

Parameter .................................................................. 8

DD

Absolute Maximum Ratings ............................................................9

ESD Caution...................................................................................9

Pin Configuration and Function Descriptions ........................... 10

Typical Performance Characteristics ........................................... 11

Test Circuits ..................................................................................... 13

Terminology .................................................................................... 15

Outline Dimensions ....................................................................... 16

Ordering Guide .......................................................................... 16

Rev. A | Page 2 of 16

ADG636

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SPECIFICATIONS

DUAL SUPPLY

VDD = 5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.

Table 1.

Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VSS to VDD V
V
On Resistance, RON 85 Ω typ VS = ±3 V, IDS = −1 mA, Figure 14
115 140 160 Ω max VS = ±3 V, IDS = −1 mA, Figure 14
On-Resistance Match Between

Channels, ΔR

ON

2 Ω typ VS = ±3 V, IDS = −1 mA

4 5.5 6.5 Ω max VS = ±3 V, IDS = −1 mA
On-Resistance Flatness, R

25 Ω typ VS = ±3 V, IDS = −1 mA

FLAT(ON)

40 55 60 Ω max VS = ±3 V, IDS = −1 mA
LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V

Source Off Leakage, IS (Off) ±0.01 nA typ VS = ±4.5 V, VD = 4.5 V, Figure 15
±0.1 ±0.25 ±2 nA max VS = ±4.5 V, VD = 4.5 V, Figure 15
Drain Off Leakage, ID (Off) ±0.01 nA typ VS = ±4.5 V, VD = 4.5 V, Figure 15
±0.1 ±0.25 ±2 nA max VS = ±4.5 V, VD = 4.5 V, Figure 15

Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±4.5 V, Figure 16
±0.1 ±0.25 ±6 nA max VS = VD = ±4.5 V, Figure 16
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INL

2.4 V min

INH

0.8 V max

INL

or I

0.005 μA typ VIN = V

INH

±0.1 μA max VIN = V
Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time 70 ns typ

100 120 150 ns max

tON Enable 100 ns typ

135 170 190 ns max

t

Enable 55 ns typ

OFF

80 90 100 ns max

Break-Before-Make Time Delay, t

20 ns typ

BBM

10 ns min

Charge Injection −1.2 pC typ

Off Isolation −65 dB typ

Channel-to-Channel Crosstalk −65 dB typ

Bandwidth −3 dB 610 MHz typ RL = 50 Ω, CL = 5 pF, Figure 22

= +4.5 V, VSS = −4.5 V

DD

or V

INL

INL

= +3 V, V

V

S1A

= 35 pF, Figure 17

C

L

= +3 V, V

V

S1A

C

= 35 pF, Figure 17

L

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 19

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 19

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 19

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 19

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 18

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 18

= 0 V, RS = 0 Ω, CL = 1 nF,

V

S

Figure 20

= 50 Ω, CL = 5 pF, f = 10 MHz,

R

L

Figure 21

= 50 Ω, CL = 5 pF, f = 10 MHz,

R

L

Figure 23

INH

or V

INH

= −3 V, RL = 300 Ω,

S1B

= −3 V, RL = 300 Ω,

S1B

Rev. A | Page 3 of 16

ADG636

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Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

CS (Off) 5 pF typ f = 1 MHz
CD (Off) 8 pF typ f = 1 MHz
CD (On), CS (On) 8 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V

IDD 0.001 μA typ Digital inputs = 0 V or 5.5 V

1.0 μA max Digital inputs = 0 V or 5.5 V
ISS 0.001 μA typ Digital inputs = 0 V or 5.5 V

1.0 μA max Digital inputs = 0 V or 5.5 V

1

Guaranteed by design; not subject to production test.

Rev. A | Page 4 of 16

ADG636

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SINGLE SUPPLY

VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.

Table 2.

Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V

V

On Resistance, RON 210 Ω typ VS = 3.5 V, IDS = −1 mA, Figure 14

290 350 380 Ω max VS = 3.5 V, IDS = −1 mA, Figure 14

On Resistance Match Between Channels, ΔRON 3 Ω typ VS = 3.5 V, IDS = −1 mA
12 13 Ω max VS = 3.5 V, IDS = −1 mA
LEAKAGE CURRENTS VDD = 5.5 V

Source Off Leakage, IS (Off) ±0.01 nA typ

±0.1 ±0.25 ±2 nA max

Drain Off Leakage, ID (Off) ±0.01 nA typ

±0.1 ±0.25 ±2 nA max

Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 4.5 V/1 V, Figure 16
±0.1 ±0.25 ±6 nA max VS = VD = 4.5 V/1 V, Figure 16
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INL

2.4 V min

INH

0.8 V max

INL

or I

0.005 μA typ VIN = V

INH

±0.1 μA max VIN = V
Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time 90 ns typ

150 185 210 ns max

tON Enable 135 ns typ

180 235 275 ns max

t

Enable 70 ns typ

OFF

105 120 135 ns max

Break-Before-Make Time Delay, t

30 ns typ

BBM

10 ns min

Charge Injection 0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF,

Figure 20

Off Isolation −60 dB typ

Channel-to-Channel Crosstalk −65 dB typ

Bandwidth −3 dB 530 MHz typ RL = 50 Ω, CL = 5 pF, Figure 22

CS (Off) 5 pF typ f = 1 MHz

CD (Off) 8 pF typ f = 1 MHz

CD (On), CS (On) 8 pF typ f = 1 MHz

= 4.5 V, VSS = 0 V

DD

= 1 V/4.5 V, VD = 4.5 V/1 V,

V

S

Figure 15
V

Figure 15
V

Figure 15
V

Figure 15

V
C

V
C

R
Figure 19

R
Figure 19

R
Figure 19

R
Figure 19

R
Figure 18

R
Figure 18

R
Figure 21

R
Figure 23

= 1 V/4.5 V, VD = 4.5 V/1 V,

S

= 1 V/4.5 V, VD = 4.5 V/1 V,

S

= 1 V/4.5 V, VD = 4.5 V/1 V,

S

or V

INL

INL

= 3 V, V

S1A

= 35 pF, Figure 17

L

= 3 V, V

S1A

= 35 pF, Figure 17

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

INH

or V

INH

= 0 V, RL = 300 Ω,

S1B

= 0 V, RL = 300 Ω,

S1B

Rev. A | Page 5 of 16